专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120164843A1 TRANSFER OF HIGH TEMPERATURE WAFERS 有权
标题翻译：高温转移
公开(公告)号：US20120164843A1
公开(公告)日：2012-06-28
申请号：US13410352
申请日：2012-03-02
申请人： Michael Albert Tischler , Ronald Thomas Bertram, JR.
发明人： Michael Albert Tischler , Ronald Thomas Bertram, JR.
IPC分类号： H01L21/30
CPC分类号： H01L21/67748 , H01L21/6838
摘要： This invention provides methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a method for moving wafers or substrates that can bathe a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.
摘要翻译：本发明提供了允许在高温下在气相外延生长室中装载和卸载晶片的方法。具体地说，本发明提供一种用于移动晶片或衬底的方法，该方法可以在任选温度控制的活性气体中洗涤移动的衬底。活性气体可以起到限制或防止晶片表面升华或分解的作用，并且可以进行温度控制以限制或防止热损伤。因此，可以减少或消除生长室的先前必需的温度斜坡，从而提高晶片生产量和系统效率。

2. 发明申请

US20100216316A1 TRANSFER OF HIGH TEMPERATURE WAFERS 有权
标题翻译：高温转移
公开(公告)号：US20100216316A1
公开(公告)日：2010-08-26
申请号：US12678466
申请日：2008-11-12
申请人： Michael Albert Tischler , Ronald Thomas Bertram, JR.
发明人： Michael Albert Tischler , Ronald Thomas Bertram, JR.
IPC分类号： H01L21/30
CPC分类号： H01L21/67748 , H01L21/6838
摘要： This invention provides apparatus, protocols, and methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a device for moving wafers or substrates that can bath a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.
摘要翻译：本发明提供允许在高温下在气相外延生长室中装载和卸载晶片的装置，方案和方法。具体地说，本发明提供了一种用于移动晶片或衬底的装置，该装置可以在可任意温度控制的活性气体中洗涤被移动的衬底。活性气体可以起到限制或防止晶片表面升华或分解的作用，并且可以进行温度控制以限制或防止热损伤。因此，可以减少或消除生长室的先前必需的温度斜坡，从而提高晶片生产量和系统效率。

3. 发明申请

US20100258053A1 APPARATUS FOR DELIVERING PRECURSOR GASES TO AN EPITAXIAL GROWTH SUBSTRATE 有权
标题翻译：用于将前驱气体输送到外来生长基质的装置
公开(公告)号：US20100258053A1
公开(公告)日：2010-10-14
申请号：US12747969
申请日：2008-12-05
申请人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, JR. , Ed Lindow , Dennis L. Goodwin
发明人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, JR. , Ed Lindow , Dennis L. Goodwin
IPC分类号： C23C16/00 , C23C16/458 , C23C16/46 , C23C16/455
CPC分类号： C30B25/14 , C23C16/4557 , C23C16/45574 , C23C16/45578 , Y10T137/8593
摘要： This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN.
摘要翻译：本发明提供了气体注射器装置，其延伸到生长室中，以便提供更精确的热化前体气体的输送。改进的注射器可以将加热的前体气体分配到在空间上彼此分离的流中的生长室中，直到它们撞击生长衬底并且具有足以用于高体积制造的体积。重要的是，改进的喷射器的尺寸和构造使得其可以适应现有的商业生长室，而不会妨碍与这种室一起使用的机械和机器人基板处理设备的操作。本发明对于许多元素和化合物半导体的高体积生长是有用的，并且特别适用于III-V族化合物和GaN的高体积生长。

4. 发明申请

US20120083100A1 THERMALIZING GAS INJECTORS FOR GENERATING INCREASED PRECURSOR GAS, MATERIAL DEPOSITION SYSTEMS INCLUDING SUCH INJECTORS, AND RELATED METHODS 有权
标题翻译：用于产生增加的前驱气体的气体注射器的热定型，包括这种注射器的材料沉积系统以及相关方法
公开(公告)号：US20120083100A1
公开(公告)日：2012-04-05
申请号：US12894724
申请日：2010-09-30
申请人： Ronald Thomas Bertram, JR.
发明人： Ronald Thomas Bertram, JR.
IPC分类号： H01L21/20 , C23C16/448
CPC分类号： H01L21/0262 , C23C16/301 , C23C16/303 , C23C16/4488 , C23C16/452 , C30B25/14 , C30B29/403
摘要： Methods of depositing material on a substrate include forming a precursor gas and a byproduct from a source gas within a thermalizing gas injector. The byproduct may be reacted with a liquid reagent to form additional precursor gas, which may be injected from the thermalizing gas injector into a reaction chamber. Thermalizing gas injectors for injecting gas into a reaction chamber of a deposition system may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. A pathway may extend from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet. The thermalizing conduit may have a length that is greater than a shortest distance between the inlet and the liquid container. Deposition systems may include one or more such thermalizing gas injectors.
摘要翻译：在衬底上沉积材料的方法包括从热化气体注入器内的源气体形成前体气体和副产物。副产物可以与液体试剂反应以形成额外的前体气体，其可以从热化气体注入器注入反应室。用于将气体注入沉积系统的反应室的热化气体注入器可以包括入口，热化管道，配置成将液体试剂保持在其中的液体容器和出口。通道可以从入口，通过热化管道延伸到液体容器内的内部空间，以及从液体容器内的内部空间延伸到出口。热化导管的长度可以大于入口和液体容器之间的最短距离。沉积系统可以包括一个或多个这样的热化气体注入器。

5. 发明申请

US20090214785A1 THERMALIZATION OF GASEOUS PRECURSORS IN CVD REACTORS 有权
标题翻译： CVD反应器中气相前体的热化
公开(公告)号：US20090214785A1
公开(公告)日：2009-08-27
申请号：US12261796
申请日：2008-10-30
申请人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, JR. , Ed Lindow
发明人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, JR. , Ed Lindow
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： H01L21/0262 , C23C16/303 , C23C16/448 , C30B25/105
摘要： The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.
摘要翻译：本发明涉及半导体处理领域，并提供通过在其反应之前促进前体气体的更有效的热化来改善半导体材料的化学气相沉积（CVD）的装置和方法。在优选的实施方案中，本发明包括传热结构及其在CVD反应器内的排列，以促进对流动的工艺气体的热传递。在适用于对来自加热灯的辐射透明的CVD反应器的某些优选实施方案中，本发明包括放射吸收表面，用于拦截来自加热灯的辐射并将其转移到流动的工艺气体。

6. 发明申请

US20130160802A1 PROCESSES AND SYSTEMS FOR REDUCING UNDESIRED DEPOSITS WITHIN A REACTION CHAMBER ASSOCIATED WITH A SEMICONDUCTOR DEPOSITION SYSTEM 审中-公开
标题翻译：用于减少与半导体沉积系统相关的反应室中的未沉积沉积物的方法和系统
公开(公告)号：US20130160802A1
公开(公告)日：2013-06-27
申请号：US13720588
申请日：2012-12-19
申请人： Ronald Thomas Bertram, JR.
发明人： Ronald Thomas Bertram, JR.
IPC分类号： B08B7/00
CPC分类号： C23C16/4405 , C23C16/303 , C30B25/00 , C30B29/403
摘要： Processes and systems are used to reduce undesired deposits within a reaction chamber associated with a semiconductor deposition system. A cleaning gas may be caused to flow through at least one gas flow path extending through at least one gas furnace, and the heated cleaning gas may be introduced into a reaction chamber to remove at least a portion of undesired deposits from within the reaction chamber.
摘要翻译：工艺和系统用于减少与半导体沉积系统相关联的反应室内不期望的沉积物。可以使清洁气体流过延伸穿过至少一个气体炉的至少一个气体流动路径，并且将加热的清洁气体引入反应室以从反应室内去除至少一部分不期望的沉积物。

7. 发明申请

US20130047918A1 DEPOSITION SYSTEMS INCLUDING A PRECURSOR GAS FURNACE WITHIN A REACTION CHAMBER, AND RELATED METHODS 审中-公开
标题翻译：在反应室中包括前体气体的沉积系统及相关方法
公开(公告)号：US20130047918A1
公开(公告)日：2013-02-28
申请号：US13591761
申请日：2012-08-22
申请人： Ronald Thomas Bertram, JR. , Michael Landis
发明人： Ronald Thomas Bertram, JR. , Michael Landis
IPC分类号： C30B25/14 , C30B25/02
CPC分类号： C30B25/14 , C23C16/301 , C23C16/4557 , C23C16/45591 , C30B29/403
摘要： Deposition systems include a reaction chamber, a substrate support structure disposed within the chamber for supporting a substrate within the reaction chamber, and a gas input system for injecting one or more precursor gases into the reaction chamber. The gas input system includes at least one precursor gas furnace disposed at least partially within the reaction chamber. Methods of depositing materials include separately flowing a first precursor gas and a second precursor gas into a reaction chamber, flowing the first precursor gas through at least one precursor gas flow path extending through at least one precursor gas furnace disposed within the reaction chamber, and, after heating the first precursor gas within the at least one precursor gas furnace, mixing the first and second precursor gases within the reaction chamber over a substrate.
摘要翻译：沉积系统包括反应室，设置在室内的基板支撑结构，用于支撑反应室内的基板;以及气体输入系统，用于将一种或多种前驱体气体注入反应室。气体输入系统包括至少部分地设置在反应室内的至少一个前体气体炉。沉积材料的方法包括将第一前体气体和第二前体气体单独流入反应室，使第一前体气体流过延伸穿过设置在反应室内的至少一个前体气体炉的至少一个前体气体流动路径，在对至少一个前体气体炉中的第一前体气体进行加热之后，将反应室内的第一和第二前体气体混合在基底上。

8. 发明申请

US20140217553A1 TEMPLATE LAYERS FOR HETEROEPITAXIAL DEPOSITION OF III NITRIDE SEMICONDUCTOR MATERIALS USING HVPE PROCESSES 有权
标题翻译：使用HVPE工艺的III型氮化物半导体材料的异相沉积的模板层
公开(公告)号：US20140217553A1
公开(公告)日：2014-08-07
申请号：US13989004
申请日：2011-11-23
申请人： Chantal Arena , Ronald Thomas Bertram, JR. , Ed Lindow , Subhash Mahajan , Ilsu Han
发明人： Chantal Arena , Ronald Thomas Bertram, JR. , Ed Lindow , Subhash Mahajan , Ilsu Han
IPC分类号： H01L21/02 , H01L29/06
CPC分类号： H01L29/0665 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02667
摘要： Methods of depositing III-nitride semiconductor materials on substrates include depositing a layer of III-nitride semiconductor material on a surface of a substrate in a nucleation HVPE process stage to form a nucleation layer having a microstructure comprising at least some amorphous III-nitride semiconductor material. The nucleation layer may be annealed to form crystalline islands of epitaxial nucleation material on the surface of the substrate. The islands of epitaxial nucleation material may be grown and coalesced in a coalescence HVPE process stage to form a nucleation template layer of the epitaxial nucleation material. The nucleation template layer may at least substantially cover the surface of the substrate. Additional III-nitride semiconductor material may be deposited over the nucleation template layer of the epitaxial nucleation material in an additional HVPE process stage. Final and intermediate structures comprising III-nitride semiconductor material are formed by such methods.
摘要翻译：在衬底上沉积III族氮化物半导体材料的方法包括在成核HVPE工艺阶段中在衬底的表面上沉积III族氮化物半导体材料层，以形成具有包含至少一些非晶III族氮化物半导体材料的微结构的成核层。成核层可以退火以在衬底的表面上形成外延成核材料的晶体岛。外延成核材料岛可以在聚结HVPE工艺阶段中生长和聚结，以形成外延成核材料的成核模板层。成核模板层可以至少基本上覆盖基材的表面。另外的III族氮化物半导体材料可以在另外的HVPE工艺阶段中沉积在外延成核材料的成核模板层上。通过这种方法形成包含III族氮化物半导体材料的最终和中间结构。

9. 发明申请

US20130234157A1 METHODS FOR FORMING GROUP III-NITRIDE MATERIALS AND STRUCTURES FORMED BY SUCH METHODS 有权
标题翻译：形成III类氮化物材料的方法和通过这些方法形成的结构
公开(公告)号：US20130234157A1
公开(公告)日：2013-09-12
申请号：US13988996
申请日：2011-11-23
申请人： Chantal Arena , Ronald Thomas Bertram, JR. , Ed Lindow , Subhash Mahajan , Fanyu Meng
发明人： Chantal Arena , Ronald Thomas Bertram, JR. , Ed Lindow , Subhash Mahajan , Fanyu Meng
IPC分类号： H01L21/02 , H01L29/20
CPC分类号： H01L21/02104 , C30B25/02 , C30B29/403 , C30B29/406 , H01L29/2003
摘要： Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.
摘要翻译：本发明的实施方案包括使用卤化物气相外延（HVPE）方法形成III族氮化物半导体结构的方法。所述方法包括在非天然生长衬底的表面上形成连续的III族氮化物成核层，所述连续III族氮化物成核层隐藏非天然生长衬底的上表面。形成连续的III族氮化物成核层可以包括形成III族氮化物层并热处理所述III族氮化物层。方法还可以包括在连续的III族氮化物成核层上形成另外的III族氮化物层。

10. 发明申请

US20130052806A1 DEPOSITION SYSTEMS HAVING ACCESS GATES AT DESIRABLE LOCATIONS, AND RELATED METHODS 审中-公开
标题翻译：在所需位置具有通道门的沉积系统及相关方法
公开(公告)号：US20130052806A1
公开(公告)日：2013-02-28
申请号：US13591718
申请日：2012-08-22
申请人： Ronald Thomas Bertram, JR. , Christiaan J. Werkhoven , Chantal Arena , Ed Lindow
发明人： Ronald Thomas Bertram, JR. , Christiaan J. Werkhoven , Chantal Arena , Ed Lindow
IPC分类号： C23C16/458 , B23P11/00 , H01L21/20
CPC分类号： C30B25/14 , C23C16/303 , C23C16/45504 , C23C16/4557 , C23C16/54 , C30B29/40 , C30B29/406 , H01L21/02538 , H01L21/0254 , H01L21/0262 , Y10T137/0402
摘要： Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device.
摘要翻译：沉积系统包括反应室和至少部分地设置在反应室内的基板支撑结构。该系统还包括至少一个气体注入装置和至少一个真空装置，它们一起用于使工艺气体流过反应室。该系统还包括至少一个进入门，工件基底可通过该入口门装载到反应室中并从反应室中卸载。至少一个进入门位于远离气体注入装置的位置。可以使用这种沉积系统进行半导体材料的沉积方法。制造这种沉积系统的方法可以包括在远离气体注入装置的位置处将进入门连接到反应室。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式