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1. 发明授权

US06402881B1 Process for electrically interconnecting electrodes 失效
标题翻译：电互连电极的工艺
公开(公告)号：US06402881B1
公开(公告)日：2002-06-11
申请号：US08486173
申请日：1995-06-06
申请人： Paul G. Carey , Jesse B. Thompson , Nicolas J. Colella , Kenneth A. Williams
发明人： Paul G. Carey , Jesse B. Thompson , Nicolas J. Colella , Kenneth A. Williams
IPC分类号： C09J10100
CPC分类号： H01L31/0508 , H01L31/048 , Y02E10/50 , Y10S528/901 , Y10T156/1092
摘要： Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb—Sn) no-clean fluxless solder cream, whereby the high breakage of thin (
摘要翻译：用于太阳能电池或其他电子部件的电气互连，使用银硅氧烷糊或铅锡（Pb-Sn）无清洁无助焊剂膏，由此使用常规焊料互连的薄（<6密耳厚）太阳能电池的高断裂被淘汰。本发明的互连使用通过可在室温下使用的银硅氧烷导电膏固定到太阳能电池的铜条，或者通过在太阳能电池的活性表面上消除不期望的残留物的Pb-Sn焊膏。使用本发明的互连的电气测试表明，在高电流测试下，不会降低互连，同时提供非常低的接触电阻值。

2. 发明授权

US5466302A Solar cell array interconnects 失效
标题翻译：太阳能电池阵列互连
公开(公告)号：US5466302A
公开(公告)日：1995-11-14
申请号：US239866
申请日：1994-05-09
申请人： Paul G. Carey , Jesse B. Thompson , Nicolas J. Colella , Kenneth A. Williams
发明人： Paul G. Carey , Jesse B. Thompson , Nicolas J. Colella , Kenneth A. Williams
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/0508 , H01L31/048 , Y02E10/50 , Y10S528/901 , Y10T156/1092
摘要： Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (
摘要翻译：用于太阳能电池或其他电子部件的电气互连，使用银硅氧烷糊或铅锡（Pb-Sn）无清洁无助焊剂膏，由此使用常规焊料互连的薄（<6密耳厚）太阳能电池的高断裂被淘汰。本发明的互连使用通过可在室温下使用的银硅氧烷导电膏固定到太阳能电池的铜条，或者通过在太阳能电池的活性表面上除去不期望的残留物的Pb-Sn焊膏。使用本发明的互连的电气测试表明，在高电流测试下，不会降低互连，同时提供非常低的接触电阻值。

3. 发明授权

US06340403B1 Solar cell module lamination process 失效
标题翻译：太阳能电池组件层压工艺
公开(公告)号：US06340403B1
公开(公告)日：2002-01-22
申请号：US08538838
申请日：1995-10-04
申请人： Paul G. Carey , Jesse B. Thompson , Randy C. Aceves
发明人： Paul G. Carey , Jesse B. Thompson , Randy C. Aceves
IPC分类号： B32B3100
CPC分类号： B32B37/226 , B32B27/00 , B32B37/12 , B32B2307/552 , B32B2307/71 , B32B2307/714 , B32B2307/734 , B32B2327/12 , H01L31/048 , Y02E10/50
摘要： A solar cell module lamination process using fluoropolymers to provide protection from adverse environmental conditions and thus enable more extended use of solar cells, particularly in space applications. A laminate of fluoropolymer material provides a hermetically sealed solar cell module structure that is flexible and very durable. The laminate is virtually chemically inert, highly transmissive in the visible spectrum, dimensionally stable at temperatures up to about 200° C. highly abrasion resistant, and exhibits very little ultra-violet degradation.
摘要翻译：使用含氟聚合物的太阳能电池模块层压方法来提供对不利环境条件的保护，从而能够更广泛地使用太阳能电池，特别是在空间应用中。含氟聚合物材料的层压材料提供了一种柔性且非常耐用的密封太阳能电池模块结构。层压板实际上是化学惰性的，在可见光谱中是高度透射的，在高达约200℃的温度下尺寸稳定，高度耐磨，并且显示非常少的紫外线降解。

4. 发明授权

US5360491A .beta.-silicon carbide protective coating and method for fabricating same 失效
标题翻译： β-碳化硅保护涂层及其制造方法
公开(公告)号：US5360491A
公开(公告)日：1994-11-01
申请号：US043809
申请日：1993-04-07
申请人： Paul G. Carey , Jesse B. Thompson
发明人： Paul G. Carey , Jesse B. Thompson
IPC分类号： H01L31/0216 , H01L31/0312 , H01L31/18 , H01L31/048
CPC分类号： H01L31/0312 , H01L31/02168 , H01L31/186 , Y02E10/50 , Y02P70/521
摘要： A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or .mu.c-SiC film on the surface and produce .beta.--SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface.
摘要翻译：一种多晶β碳化硅膜或其在诸如太阳能电池顶部的部件上形成的多晶β-碳化硅膜或其涂层以及用作防反射涂层的方法。这是通过非晶硅和碳的直流磁控管共溅射来实现的，以在诸如太阳能电池的表面上形成SiC薄膜。然后通过脉冲能量源（例如准分子激光器）照射该薄膜，以在表面上合成多晶或μC-SiC膜并产生β-SiC。虽然本发明的方法在太阳能电池制造中具有主要应用，但是其在任何需要极硬表面的地方都具有应用。

5. 发明授权

US5817550A Method for formation of thin film transistors on plastic substrates 失效
标题翻译：在塑料基板上形成薄膜晶体管的方法
公开(公告)号：US5817550A
公开(公告)日：1998-10-06
申请号：US611318
申请日：1996-03-05
申请人： Paul G. Carey , Patrick M. Smith , Thomas W. Sigmon , Randy C. Aceves
发明人： Paul G. Carey , Patrick M. Smith , Thomas W. Sigmon , Randy C. Aceves
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/268
CPC分类号： H01L21/268 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01L27/1214 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78666
摘要： A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.
摘要翻译：用于在塑料基板上形成薄膜晶体管（TFT）的工艺代替标准薄膜晶体管制造技术，并且使用足够低的处理温度，以便可以使用便宜的塑料基板代替标准玻璃，石英和硅晶片基板。该方法依赖于在低温下沉积半导体，电介质和金属的技术; 用脉冲能量源在TFT中结晶和掺杂半导体层; 并创建顶栅自对准以及背栅TFT结构。该过程使得能够在足够低的温度下制造非晶硅和多晶硅硅TFT，以防止损坏塑料基板。该方法可用于大面积低成本电子产品，如平板显示器和便携式电子产品。

6. 发明授权

US5994174A Method of fabrication of display pixels driven by silicon thin film transistors 失效
标题翻译：由硅薄膜晶体管驱动的显示像素的制造方法
公开(公告)号：US5994174A
公开(公告)日：1999-11-30
申请号：US940104
申请日：1997-09-29
申请人： Paul G. Carey , Patrick M. Smith
发明人： Paul G. Carey , Patrick M. Smith
IPC分类号： G02F1/1333 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L29/786 , H01L21/268
CPC分类号： H01L29/66765 , G02F1/1368 , H01L27/1218 , H01L29/78603 , G02F1/133305 , G02F1/136213
摘要： Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.
摘要翻译：由硅薄膜晶体管驱动的显示像素被制造在用于有源矩阵显示器（例如平板显示器）中的塑料基板上。用于形成像素的工艺涉及用于在低温塑料基板上形成各个硅薄膜晶体管的现有方法。低温基底通常被认为不能承受大于约200℃的持续处理温度。像素形成过程导致完整的像素和有源矩阵像素阵列。有源矩阵显示器中的像素（或像素）由可以控制液晶光阀，发光材料（例如发光二极管或LED）的硅薄膜晶体管（TFT）和大电极组成，或一些其他发光或衰减材料。像素可以以阵列的形式连接，其中像素行包含公共栅电极，并且像素列包含公共漏电极。每个像素TFT的源电极连接到其像素电极，并且与像素阵列中的每隔一个电路元件电隔离。

7. 发明授权

US5856858A Plastic substrates for active matrix liquid crystal display incapable of withstanding processing temperature of over 200.degree. C and method of fabrication 失效
标题翻译：用于有源矩阵液晶显示器的塑料基板不能承受超过200℃的加工温度和制造方法
公开(公告)号：US5856858A
公开(公告)日：1999-01-05
申请号：US980837
申请日：1997-12-01
申请人： Paul G. Carey , Patrick M. Smith , John Havens , Phil Jones
发明人： Paul G. Carey , Patrick M. Smith , John Havens , Phil Jones
IPC分类号： G02F1/1333 , G02F1/1334 , G02F1/1368 , G02F1/133
CPC分类号： G02F1/133305 , G02F1/1334 , G02F1/1368
摘要： Bright-polarizer-free, active-matrix liquid crystal displays (AMLCDs) are formed on plastic substrates. The primary components of the display are a pixel circuit fabricated on one plastic substrate, an intervening liquid-crystal material, and a counter electrode on a second plastic substrate. The-pixel circuit contains one or more thin-film transistors (TFTs) and either a transparent or reflective pixel electrode manufactured at sufficiently low temperatures to avoid damage to the plastic substrate. Fabrication of the TFTs can be carried out at temperatures less than 100.degree. C. The liquid crystal material is a commercially made nematic curvilinear aligned phase (NCAP) film. The counter electrode is comprised of a plastic substrate coated with a transparent conductor, such as indium-doped tin oxide (ITO). By coupling the active matrix with NCAP, a high-information content can be provided in a bright, fully plastic package. Applications include any low cost portable electronics containing flat displays where ruggedization of the display is desired.
摘要翻译：在塑料基板上形成无偏光镜的有源矩阵液晶显示器（AMLCD）。显示器的主要部件是在一个塑料基板，中间液晶材料和第二塑料基板上的对电极上制造的像素电路。像素电路包含一个或多个薄膜晶体管（TFT）以及在足够低的温度下制造的透明或反射像素电极，以避免损坏塑料基板。 TFT的制造可以在低于100℃的温度下进行。液晶材料是商业上制作的向列线性对准相（NCAP）膜。对电极由涂覆有透明导体的诸如铟掺杂氧化锡（ITO）的塑料基板组成。通过将有源矩阵与NCAP耦合，可以在明亮的全塑料封装中提供高信息含量。应用包括任何低成本便携式电子产品，其中包含需要显示器加固的平板显示器。

8. 再颁专利

USRE39988E1 Deposition of dopant impurities and pulsed energy drive-in 有权
标题翻译：掺杂杂质沉积和脉冲能量驱入
公开(公告)号：USRE39988E1
公开(公告)日：2008-01-01
申请号：US10768656
申请日：2001-06-29
申请人： Paul Wickboldt , Paul G. Carey , Patrick M. Smith , Albert R. Ellingboe
发明人： Paul Wickboldt , Paul G. Carey , Patrick M. Smith , Albert R. Ellingboe
IPC分类号： H01L21/26 , H01L21/42 , H01L21/22 , H01L21/38
CPC分类号： H01L21/2254
摘要： A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.
摘要翻译：使用气体浸渍激光掺杂（GILD）技术增强可实现掺杂剂掺杂的半导体掺杂工艺。增强的掺杂是通过首先在半导体表面上沉积掺杂剂原子的薄层，然后从激光或离子束暴露于一个或多个脉冲来实现的，该激光或离子束将半导体的一部分熔化到期望的深度，从而导致掺杂原子被掺入到熔融区域中。在熔融区域重结晶之后，掺杂剂原子是电活性的。通过等离子体增强化学气相沉积（PECVD）或其他已知的沉积技术沉积掺杂剂原子。

9. 发明授权

US06680485B1 Thin film transistors on plastic substrates 失效
标题翻译：塑料基板上的薄膜晶体管
公开(公告)号：US06680485B1
公开(公告)日：2004-01-20
申请号：US09025006
申请日：1998-02-17
申请人： Paul G. Carey , Patrick M. Smith , Thomas W. Sigmon , Randy C. Aceves
发明人： Paul G. Carey , Patrick M. Smith , Thomas W. Sigmon , Randy C. Aceves
IPC分类号： H01L2904
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L27/1214 , H01L29/66757 , H01L29/78603 , H01L29/78666 , H01L29/78675
摘要： A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250° C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.
摘要翻译：用于在塑料基板上形成薄膜晶体管（TFT）的工艺代替标准薄膜晶体管制造技术，并且使用足够低的处理温度，以便可以使用便宜的塑料基板代替标准玻璃，石英和硅晶片基板。通过该方法制造的基于硅的薄膜晶体管包括不能承受大于约250℃的持续处理温度的低温衬底，衬底上的绝缘层，具有掺杂硅的部分的绝缘层上的硅层，未掺杂的硅和多晶硅，硅层上的栅极介电层，电介质层上的栅极金属层，在硅层和栅极金属层上的部分上的氧化物层，以及金属接触限定源极，栅极和漏极触点以及互连的硅层和栅极金属层的部分。

10. 发明授权

US06303446B1 Method of making self-aligned lightly-doped-drain structure for MOS transistors 失效
标题翻译：制造用于MOS晶体管的自对准轻掺杂漏极结构的方法
公开(公告)号：US06303446B1
公开(公告)日：2001-10-16
申请号：US08593766
申请日：1996-01-29
申请人： Kurt H. Weiner , Paul G. Carey
发明人： Kurt H. Weiner , Paul G. Carey
IPC分类号： H01L21336
CPC分类号： H01L29/6659 , H01L21/223
摘要： A process for fabricating lightly-doped-drains (LDD) for short-channel metal oxide semiconductor (MOS) transistors. The process utilizes a pulsed laser process to incorporate the dopants, thus eliminating the prior oxide deposition and etching steps. During the process, the silicon in the source/drain region is melted by the laser energy. Impurities from the gas phase diffuse into the molten silicon to appropriately dope the source/drain regions. By controlling the energy of the laser, a lightly-doped-drain can be formed in one processing step. This is accomplished by first using a single high energy laser pulse to melt the silicon to a significant depth and thus the amount of dopants incorporated into the silicon is small. Furthermore, the dopants incorporated during this step diffuse to the edge of the MOS transistor gate structure. Next, many low energy laser pulses are used to heavily dope the source/drain silicon only in a very shallow region. Because of two-dimensional heat transfer at the MOS transistor gate edge, the low energy pulses are inset from the region initially doped by the high energy pulse. By computer control of the laser energy, the single high energy laser pulse and the subsequent low energy laser pulses are carried out in a single operational step to produce a self-aligned lightly-doped-drain-structure.
摘要翻译：一种制造用于短沟道金属氧化物半导体（MOS）晶体管的轻掺杂漏极（LDD）的方法。该方法利用脉冲激光工艺来掺入掺杂剂，从而消除了先前的氧化物沉积和蚀刻步骤。在该过程中，源极/漏极区域中的硅被激光能量熔化。来自气相的杂质扩散到熔融硅中以适当地掺杂源/漏区。通过控制激光的能量，可以在一个处理步骤中形成轻掺杂漏极。这是通过首先使用单个高能激光脉冲来将硅熔化到显着的深度来实现的，因此掺入硅中的掺杂剂的量很小。此外，掺杂在该步骤中的掺杂剂扩散到MOS晶体管栅极结构的边缘。接下来，许多低能激光脉冲被用于仅在非常浅的区域中重掺杂源极/漏极硅。由于在MOS晶体管栅极边缘处的二维热传递，低能量脉冲从最初由高能脉冲掺杂的区域插入。通过计算机控制激光能量，单个高能量激光脉冲和随后的低能激光脉冲在单个操作步骤中进行，以产生自对准的轻掺杂漏极结构。

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