专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5817550A Method for formation of thin film transistors on plastic substrates 失效
标题翻译：在塑料基板上形成薄膜晶体管的方法
公开(公告)号：US5817550A
公开(公告)日：1998-10-06
申请号：US611318
申请日：1996-03-05
申请人： Paul G. Carey , Patrick M. Smith , Thomas W. Sigmon , Randy C. Aceves
发明人： Paul G. Carey , Patrick M. Smith , Thomas W. Sigmon , Randy C. Aceves
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/268
CPC分类号： H01L21/268 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01L27/1214 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78666
摘要： A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.
摘要翻译：用于在塑料基板上形成薄膜晶体管（TFT）的工艺代替标准薄膜晶体管制造技术，并且使用足够低的处理温度，以便可以使用便宜的塑料基板代替标准玻璃，石英和硅晶片基板。该方法依赖于在低温下沉积半导体，电介质和金属的技术; 用脉冲能量源在TFT中结晶和掺杂半导体层; 并创建顶栅自对准以及背栅TFT结构。该过程使得能够在足够低的温度下制造非晶硅和多晶硅硅TFT，以防止损坏塑料基板。该方法可用于大面积低成本电子产品，如平板显示器和便携式电子产品。

2. 发明授权

US5994174A Method of fabrication of display pixels driven by silicon thin film transistors 失效
标题翻译：由硅薄膜晶体管驱动的显示像素的制造方法
公开(公告)号：US5994174A
公开(公告)日：1999-11-30
申请号：US940104
申请日：1997-09-29
申请人： Paul G. Carey , Patrick M. Smith
发明人： Paul G. Carey , Patrick M. Smith
IPC分类号： G02F1/1333 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L29/786 , H01L21/268
CPC分类号： H01L29/66765 , G02F1/1368 , H01L27/1218 , H01L29/78603 , G02F1/133305 , G02F1/136213
摘要： Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.
摘要翻译：由硅薄膜晶体管驱动的显示像素被制造在用于有源矩阵显示器（例如平板显示器）中的塑料基板上。用于形成像素的工艺涉及用于在低温塑料基板上形成各个硅薄膜晶体管的现有方法。低温基底通常被认为不能承受大于约200℃的持续处理温度。像素形成过程导致完整的像素和有源矩阵像素阵列。有源矩阵显示器中的像素（或像素）由可以控制液晶光阀，发光材料（例如发光二极管或LED）的硅薄膜晶体管（TFT）和大电极组成，或一些其他发光或衰减材料。像素可以以阵列的形式连接，其中像素行包含公共栅电极，并且像素列包含公共漏电极。每个像素TFT的源电极连接到其像素电极，并且与像素阵列中的每隔一个电路元件电隔离。

3. 发明授权

US5856858A Plastic substrates for active matrix liquid crystal display incapable of withstanding processing temperature of over 200.degree. C and method of fabrication 失效
标题翻译：用于有源矩阵液晶显示器的塑料基板不能承受超过200℃的加工温度和制造方法
公开(公告)号：US5856858A
公开(公告)日：1999-01-05
申请号：US980837
申请日：1997-12-01
申请人： Paul G. Carey , Patrick M. Smith , John Havens , Phil Jones
发明人： Paul G. Carey , Patrick M. Smith , John Havens , Phil Jones
IPC分类号： G02F1/1333 , G02F1/1334 , G02F1/1368 , G02F1/133
CPC分类号： G02F1/133305 , G02F1/1334 , G02F1/1368
摘要： Bright-polarizer-free, active-matrix liquid crystal displays (AMLCDs) are formed on plastic substrates. The primary components of the display are a pixel circuit fabricated on one plastic substrate, an intervening liquid-crystal material, and a counter electrode on a second plastic substrate. The-pixel circuit contains one or more thin-film transistors (TFTs) and either a transparent or reflective pixel electrode manufactured at sufficiently low temperatures to avoid damage to the plastic substrate. Fabrication of the TFTs can be carried out at temperatures less than 100.degree. C. The liquid crystal material is a commercially made nematic curvilinear aligned phase (NCAP) film. The counter electrode is comprised of a plastic substrate coated with a transparent conductor, such as indium-doped tin oxide (ITO). By coupling the active matrix with NCAP, a high-information content can be provided in a bright, fully plastic package. Applications include any low cost portable electronics containing flat displays where ruggedization of the display is desired.
摘要翻译：在塑料基板上形成无偏光镜的有源矩阵液晶显示器（AMLCD）。显示器的主要部件是在一个塑料基板，中间液晶材料和第二塑料基板上的对电极上制造的像素电路。像素电路包含一个或多个薄膜晶体管（TFT）以及在足够低的温度下制造的透明或反射像素电极，以避免损坏塑料基板。 TFT的制造可以在低于100℃的温度下进行。液晶材料是商业上制作的向列线性对准相（NCAP）膜。对电极由涂覆有透明导体的诸如铟掺杂氧化锡（ITO）的塑料基板组成。通过将有源矩阵与NCAP耦合，可以在明亮的全塑料封装中提供高信息含量。应用包括任何低成本便携式电子产品，其中包含需要显示器加固的平板显示器。

4. 再颁专利

USRE39988E1 Deposition of dopant impurities and pulsed energy drive-in 有权
标题翻译：掺杂杂质沉积和脉冲能量驱入
公开(公告)号：USRE39988E1
公开(公告)日：2008-01-01
申请号：US10768656
申请日：2001-06-29
申请人： Paul Wickboldt , Paul G. Carey , Patrick M. Smith , Albert R. Ellingboe
发明人： Paul Wickboldt , Paul G. Carey , Patrick M. Smith , Albert R. Ellingboe
IPC分类号： H01L21/26 , H01L21/42 , H01L21/22 , H01L21/38
CPC分类号： H01L21/2254
摘要： A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.
摘要翻译：使用气体浸渍激光掺杂（GILD）技术增强可实现掺杂剂掺杂的半导体掺杂工艺。增强的掺杂是通过首先在半导体表面上沉积掺杂剂原子的薄层，然后从激光或离子束暴露于一个或多个脉冲来实现的，该激光或离子束将半导体的一部分熔化到期望的深度，从而导致掺杂原子被掺入到熔融区域中。在熔融区域重结晶之后，掺杂剂原子是电活性的。通过等离子体增强化学气相沉积（PECVD）或其他已知的沉积技术沉积掺杂剂原子。

5. 发明授权

US06680485B1 Thin film transistors on plastic substrates 失效
标题翻译：塑料基板上的薄膜晶体管
公开(公告)号：US06680485B1
公开(公告)日：2004-01-20
申请号：US09025006
申请日：1998-02-17
申请人： Paul G. Carey , Patrick M. Smith , Thomas W. Sigmon , Randy C. Aceves
发明人： Paul G. Carey , Patrick M. Smith , Thomas W. Sigmon , Randy C. Aceves
IPC分类号： H01L2904
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L27/1214 , H01L29/66757 , H01L29/78603 , H01L29/78666 , H01L29/78675
摘要： A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250° C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.
摘要翻译：用于在塑料基板上形成薄膜晶体管（TFT）的工艺代替标准薄膜晶体管制造技术，并且使用足够低的处理温度，以便可以使用便宜的塑料基板代替标准玻璃，石英和硅晶片基板。通过该方法制造的基于硅的薄膜晶体管包括不能承受大于约250℃的持续处理温度的低温衬底，衬底上的绝缘层，具有掺杂硅的部分的绝缘层上的硅层，未掺杂的硅和多晶硅，硅层上的栅极介电层，电介质层上的栅极金属层，在硅层和栅极金属层上的部分上的氧化物层，以及金属接触限定源极，栅极和漏极触点以及互连的硅层和栅极金属层的部分。

6. 发明授权

US07112846B2 Thin film transistors on plastic substrates with reflective coatings for radiation protection 失效
公开(公告)号：US07112846B2
公开(公告)日：2006-09-26
申请号：US10621875
申请日：2003-07-16
申请人： Jesse D. Wolfe , Steven D. Theiss , Paul G. Carey , Patrick M. Smith , Paul Wickboldt
发明人： Jesse D. Wolfe , Steven D. Theiss , Paul G. Carey , Patrick M. Smith , Paul Wickboldt
IPC分类号： H01L27/01
CPC分类号： H01L29/66757 , H01L29/78603
摘要： Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

7. 发明授权

US06642085B1 Thin film transistors on plastic substrates with reflective coatings for radiation protection 失效
标题翻译：塑料基板上的薄膜晶体管，具有用于辐射防护的反射涂层
公开(公告)号：US06642085B1
公开(公告)日：2003-11-04
申请号：US09705484
申请日：2000-11-03
申请人： Jesse D. Wolfe , Steven D. Theiss , Paul G. Carey , Patrick M. Smith , Paul Wickboldt
发明人： Jesse D. Wolfe , Steven D. Theiss , Paul G. Carey , Patrick M. Smith , Paul Wickboldt
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L29/78603
摘要： Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.
摘要翻译：使用反射涂层在低温塑料基板上制造硅薄膜晶体管（TFT），以便使用便宜的塑料基板代替标准的玻璃，石英和硅晶片基板。 TFT可用于大面积低成本电子产品，例如平板显示器和便携式电子产品，如摄像机，个人数字助理和手机。

8. 发明授权

US5918140A Deposition of dopant impurities and pulsed energy drive-in 失效
标题翻译：掺杂杂质沉积和脉冲能量驱入
公开(公告)号：US5918140A
公开(公告)日：1999-06-29
申请号：US876414
申请日：1997-06-16
申请人： Paul Wickboldt , Paul G. Carey , Patrick M. Smith , Albert R. Ellingboe
发明人： Paul Wickboldt , Paul G. Carey , Patrick M. Smith , Albert R. Ellingboe
IPC分类号： H01L21/225 , H01L21/223
CPC分类号： H01L21/2254
摘要： A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.
摘要翻译：使用气体浸渍激光掺杂（GILD）技术增强可实现掺杂剂掺杂的半导体掺杂工艺。增强的掺杂是通过首先在半导体表面上沉积掺杂剂原子的薄层，然后从激光或离子束暴露于一个或多个脉冲来实现的，该激光或离子束将半导体的一部分熔化到期望的深度，从而导致掺杂原子被掺入到熔融区域中。在熔融区域重结晶之后，掺杂剂原子是电活性的。通过等离子体增强化学气相沉积（PECVD）或其他已知的沉积技术沉积掺杂剂原子。

9. 发明授权

US06436739B1 Thick adherent dielectric films on plastic substrates and method for depositing same 失效
标题翻译：塑料基底上的厚粘附介质膜及其沉积方法
公开(公告)号：US06436739B1
公开(公告)日：2002-08-20
申请号：US09560058
申请日：2000-04-27
申请人： Paul Wickboldt , Albert R. Ellingboe , Steven D. Theiss , Patrick M. Smith
发明人： Paul Wickboldt , Albert R. Ellingboe , Steven D. Theiss , Patrick M. Smith
IPC分类号： H01L2184
CPC分类号： C23C16/402 , C23C14/10 , C23C14/541 , C23C16/46
摘要： Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 &mgr;m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 &mgr;m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.
摘要翻译：沉积在塑料基板上的厚粘附介质膜用作热障层以保护塑料基板免受高温的影响，例如在随后沉积在电介质膜上的层的激光退火期间发生。优选的是，阻隔层具有以下特性：1μm以上的厚度，粘附在塑料基板上，在温度循环时不会剥离，在受到弯曲时具有很少或没有裂纹并且不会发生裂纹当浸没在流体中时剥离，电绝缘并且优选是透明的。厚的阻挡层可以由各种电介质和某些金属氧化物构成，并且可以通过各种已知的沉积技术沉积在各种塑料基板上。在塑料基板上形成厚的阻挡层的方法的关键是在阻挡层的沉积过程中保持基板的冷却。衬底的冷却可以通过使用其上定位有塑料衬底的冷却卡盘，并且通过引导诸如He，Ar和N2之类的冷却气体在塑料衬底和冷却卡盘之间来实现。高达约5μm的厚粘附介质膜已经沉积在包括上述属性的塑料基板上，并且使得塑料基板能够承受施加到沉积在电介质膜上的材料的激光加工温度。

10. 发明授权

US06649216B2 In-line ultraviolet curable coating process and products produced thereby 失效
公开(公告)号：US06649216B2
公开(公告)日：2003-11-18
申请号：US09946718
申请日：2001-09-05
申请人： Steven J. Gust , Patrick M. Smith , Jan C. Westermeier
发明人： Steven J. Gust , Patrick M. Smith , Jan C. Westermeier
IPC分类号： B05D306
CPC分类号： B05D7/04 , B05D3/067 , B05D3/12
摘要： The present invention relates to a method of coating polymer film that includes the steps of extruding a cast sheet; stretching the sheet in a machine direction; applying a UV-curable coating to the sheet in-line; stretching the sheet in a transverse direction in a tenter; and exposing the coated sheet to UV radiation in-line.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式