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    • 4. 发明授权
    • Removal of residues from metallic insert used in manufacture of
multi-layer ceramic substrate with cavity for microelectronic chip
    • 从用于微电子芯片空腔的多层陶瓷基板制造中使用的金属插件中除去残留物
    • US5643818A
    • 1997-07-01
    • US642238
    • 1996-05-02
    • Krishna G. SachdevThomas E. LombardiVincent P. Peterson
    • Krishna G. SachdevThomas E. LombardiVincent P. Peterson
    • H01L21/48H01L21/70
    • H01L21/4857H01L21/4864H01L2924/15153H01L2924/1517
    • After a metallic insert has been used precisely to define a cavity for a microelectronic chip in a laminated, multi-sheet, predominantly ceramic substrate having metallic features, any green sheet and metal-polymer composite paste residues are removed from the metallic insert by immersing the metallic insert in an ultrasonically agitated bath containing a first solvent having a relatively high boiling point for about five to fifteen minutes, replacing the first solvent with a second solvent having a relatively low boiling point, and drying the metallic insert in hot air or hot nitrogen to remove the second solvent. Preferably, the first solvent is an alkoxy alcohol, such as 1-methoxy-2-propanol or 3-methoxy-1-butanol, or a hydroxy ester, such as ethyl lactate, and the second solvent is a lower alkyl alcohol, such as isopropanol. Alternatively, the first solvent may be a ketone or an alkyl ester. The metallic insert is rinsed in the second solvent, preferably in an ultrasonically agitated bath, to replace the first solvent with the second solvent before the metallic insert is dried to remove the first solvent.
    • 在金属插入件被精确地用于在具有金属特征的层压,多片,主要为陶瓷的基底中限定用于微电子芯片的空腔的情况下,通过将任何生片和金属 - 聚合物复合糊料残留物从金属插入物中浸渍 金属插入物在包含具有较高沸点的第一溶剂的超声波搅拌浴中约5至15分钟,用具有相对低沸点的第二溶剂代替第一溶剂,并在热空气或热氮中干燥金属插入物 以除去第二溶剂。 优选地,第一溶剂是烷氧基醇,例如1-甲氧基-2-丙醇或3-甲氧基-1-丁醇,或羟基酯如乳酸乙酯,第二溶剂是低级烷基醇,例如 异丙醇 或者,第一溶剂可以是酮或烷基酯。 金属插入物在第二溶剂中,优选在超声波搅拌浴中漂洗,以在将金属插入物干燥以除去第一溶剂之前用第二溶剂替换第一溶剂。
    • 5. 发明授权
    • Method of forming defect-free ceramic structures using thermally depolymerizable surface layer
    • 使用可热解聚表面层形成无缺陷陶瓷结构的方法
    • US06597058B1
    • 2003-07-22
    • US09370733
    • 1999-08-09
    • Govindarajan NatarajanRichard F. IndykVincent P. PetersonKrishna G. Sachdev
    • Govindarajan NatarajanRichard F. IndykVincent P. PetersonKrishna G. Sachdev
    • H01L2358
    • H01L21/481H01L23/49894H01L2924/0002H01L2924/09701H01L2924/12044Y10S438/976H01L2924/00
    • This invention relates generally to a new method of forming semiconductor substrates with defect-free surface metallurgical features. In particular, the invention related to a method for providing surface protected ceramic green sheet laminates using at least one thermally depolymerizable surface layer. More particularly, the invention encompasses a method for fabricating semiconductor substrates wherein a thermally depolymerizable/decomposable surface film is placed over a ceramic green sheet stack or assembly prior to lamination and caused to conform to the surface topography of the green sheet during lamination. The invention also encompasses a method for fabricating surface protected green sheet laminates which can be sized or diced without causing process related defects on the ceramic surface. After lamination the thermally depolymerizable/decomposable film is conveniently and cleanly removed due to thermal depolymerization and burn-off of volatile species during the sintering process, thus providing surface defect-free ceramic substrates.
    • 本发明一般涉及一种形成具有无缺陷表面冶金特征的半导体衬底的新方法。 特别地,本发明涉及使用至少一个可热解聚表面层来提供表面保护的陶瓷生片层叠体的方法。 更具体地说,本发明包括一种制造半导体衬底的方法,其中在层压之前将热可解聚/可分解的表面薄膜放置在陶瓷生片层或组件上方并使其在叠层过程中符合生片的表面形貌。 本发明还包括用于制造表面保护的生片层压板的方法,其可以在陶瓷表面上不引起工艺相关缺陷的尺寸或切割。 在层压之后,由于在烧结过程中挥发物质的热解聚和燃烧,因此可方便且清洁地除去热可分解/可分解的膜,从而提供无表面缺陷的陶瓷基材。
    • 7. 发明授权
    • Method of forming defect-free ceramic structures using thermally depolymerizable surface layer
    • 使用可热解聚表面层形成无缺陷陶瓷结构的方法
    • US06261927B1
    • 2001-07-17
    • US09302943
    • 1999-04-30
    • Govindarajan NatarajanRichard F. IndykVincent P. PetersonKrishna G. Sachdev
    • Govindarajan NatarajanRichard F. IndykVincent P. PetersonKrishna G. Sachdev
    • H01L2130
    • H01L21/481H01L23/49894H01L2924/0002H01L2924/09701H01L2924/12044Y10S438/976H01L2924/00
    • This invention relates generally to a new method of forming semiconductor substrates with defect-free surface metallurgical features. In particular, the invention related to a method for providing surface protected ceramic green sheet laminates using at least one thermally depolymerizable surface layer. More particularly, the invention encompasses a method for fabricating semiconductor substrates wherein a thermally depolymerizable/decomposable surface film is placed over a ceramic green sheet stack or assembly prior to lamination and caused to conform to the surface topography of the green sheet during lamination. The invention also encompasses a method for fabricating surface protected green sheet laminates which can be sized or diced without causing process related defects on the ceramic surface. After lamination the thermally depolymerizable/decomposable film is conveniently and cleanly removed due to thermal depolymerization and burn-off of volatile species during the sintering process, thus providing surface defect-free ceramic substrates.
    • 本发明一般涉及一种形成具有无缺陷表面冶金特征的半导体衬底的新方法。 特别地,本发明涉及使用至少一个可热解聚表面层来提供表面保护的陶瓷生片层叠体的方法。 更具体地说,本发明包括一种制造半导体衬底的方法,其中在层压之前将热可解聚/可分解的表面薄膜放置在陶瓷生片层或组件上方并使其在叠层过程中符合生片的表面形貌。 本发明还包括用于制造表面保护的生片层压板的方法,其可以在陶瓷表面上不引起工艺相关缺陷的尺寸或切割。 在层压之后,由于在烧结过程中挥发物质的热解聚和燃烧,因此可方便且清洁地除去热可分解/可分解的膜,从而提供无表面缺陷的陶瓷基材。