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1. 依法登记的发明

USH1595H Pesticide substituted diketonitriles 失效
标题翻译：农药取代二酮腈
公开(公告)号：USH1595H
公开(公告)日：1996-09-03
申请号：US259245
申请日：1994-06-13
申请人： Paul A. Cain , David T.-W. Chou , Themistocles D. J. D'Silva , Daniel B. Grant , Nancy D. Herman
发明人： Paul A. Cain , David T.-W. Chou , Themistocles D. J. D'Silva , Daniel B. Grant , Nancy D. Herman
IPC分类号： A01N43/42 , A01N37/34
CPC分类号： A01N43/42
摘要： The invention relates to diketontrile derivatives which have been discovered useful against arthropods, plant nematodes, helminth protozoan pests or as intermediates for such useful compounds which have a general formula: ##STR1##
摘要翻译：本发明涉及已被发现可用于节肢动物，植物线虫，蠕虫原生动物害虫或作为具有以下通式的有用化合物的中间体的二芴衍生物：

2. 依法登记的发明

USH1596H Pesticide substituted diketonitriles 失效
标题翻译：农药取代二酮腈
公开(公告)号：USH1596H
公开(公告)日：1996-09-03
申请号：US259248
申请日：1994-06-13
申请人： Paul A. Cain , David T. Chou , Themistocles D. J. D'Silva , Daniel B. Gant , Nancy D. Herman
发明人： Paul A. Cain , David T. Chou , Themistocles D. J. D'Silva , Daniel B. Gant , Nancy D. Herman
IPC分类号： A01N37/42 , A01N41/04 , A01N41/06 , A01N41/10 , A01N37/34
CPC分类号： A01N41/10 , A01N37/42 , A01N41/04 , A01N41/06
摘要： The invention relates to diketontrile derivatives which have been discovered useful against arthropods, plant nematodes, helminth protozoan pests or as intermediates for such useful compounds which have general formula: ##STR1##
摘要翻译：本发明涉及已被发现可用于节肢动物，植物线虫，蠕虫原生动物害虫或作为具有以下通式的有用化合物的中间体的二芴衍生物：

3. 依法登记的发明

USH1552H Pesticide substituted diketonitriles 失效
公开(公告)号：USH1552H
公开(公告)日：1996-06-04
申请号：US259088
申请日：1994-06-13
申请人： Paul A. Cain , David T. Chou , Themistocles D. J. D'Silva , Daniel B. Gant , Nancy D. Herman
发明人： Paul A. Cain , David T. Chou , Themistocles D. J. D'Silva , Daniel B. Gant , Nancy D. Herman
IPC分类号： A01N37/42 , A01N41/10 , A01N37/34 , A61K31/275
CPC分类号： A01N41/10 , A01N37/42
摘要： The invention relates to diketontrile derivatives which have been discovered useful against arthropods, plant nematodes, helminth protozoan pests or as intermediates for such useful compounds which have a general formula: ##STR1##

4. 发明授权

US07947612B2 Electronic device array 有权
标题翻译：电子设备阵列
公开(公告)号：US07947612B2
公开(公告)日：2011-05-24
申请号：US11793294
申请日：2005-12-16
申请人： Paul A. Cain
发明人： Paul A. Cain
IPC分类号： H01L21/00
CPC分类号： H01L27/283 , H01L51/0017 , H01L51/0512 , H01L51/0516 , H01L51/0541
摘要： A method of producing an array of electronic devices, the method including the steps of: forming one or more first conductive elements of a first electronic device on a substrate and one or more second conductive elements of a second electronic device on said substrate; and forming a layer of channel material over the substrate and the first and second conductive elements to provide a first channel for, in use, the movement of charge carriers between conductive elements of said first electronic device and a second channel for, in use, the movement of charge carriers between conductive elements of said second electronic device; wherein the method also includes the step (a) of using an irradiative technique to decrease in a single step the conductivity of one or more selected portions of the layer of channel material in one or more regions between the first and second conductive elements.
摘要翻译：一种制造电子器件阵列的方法，所述方法包括以下步骤：在衬底上形成第一电子器件的一个或多个第一导电元件和在所述衬底上形成第二电子器件的一个或多个第二导电元件; 以及在所述衬底和所述第一和第二导电元件之上形成沟道材料层，以在使用中提供第一通道，用于在所述第一电子器件的导电元件和第二通道之间的电荷载体的移动，电荷载体在所述第二电子器件的导电元件之间的移动; 其中所述方法还包括步骤（a），其使用照射技术在一个步骤中减少所述第一和第二导电元件之间的一个或多个区域中的所述通道材料层的一个或多个选定部分的导电率。

5. 发明授权

US07696090B2 Rectifying diodes with self-aligned electrodes 有权
标题翻译：用自对准电极整流二极管
公开(公告)号：US07696090B2
公开(公告)日：2010-04-13
申请号：US10562004
申请日：2004-07-02
申请人： Paul A. Cain , Henning Sirringhaus , Anoop Menon , Catherine Ramsdale , Tim Von Werne
发明人： Paul A. Cain , Henning Sirringhaus , Anoop Menon , Catherine Ramsdale , Tim Von Werne
IPC分类号： H01L21/441
CPC分类号： H01L51/0583 , B82Y30/00 , H01L27/28 , H01L51/0004 , H01L51/0017 , H01L51/0021 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0075 , H01L51/0579
摘要： A rectifying diode comprising a semiconducting layer, a first electrode, and a second electrode, wherein the width of the region of closest contact between the two electrodes is on the order of the thickness of the semiconducting layer.
摘要翻译：一种整流二极管，包括半导体层，第一电极和第二电极，其中两个电极之间最接近的区域的宽度为半导体层厚度的数量级。

6. 发明申请

US20090212292A1 Layer-selective laser ablation patterning 有权
标题翻译：层选择性激光烧蚀图案化
公开(公告)号：US20090212292A1
公开(公告)日：2009-08-27
申请号：US11915731
申请日：2006-05-30
申请人： Carl Hayton , Thomas Meredith Brown , Paul A. Cain
发明人： Carl Hayton , Thomas Meredith Brown , Paul A. Cain
IPC分类号： H01L29/786 , H01L29/06 , B23K26/36
CPC分类号： H01L51/102 , B23K26/0622 , B23K26/064 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , H01L21/02675 , H01L21/268 , H01L21/76894 , H01L27/1214 , H01L27/1259 , H01L29/78681 , H01L51/0017 , H01L51/0021 , H01L51/0023 , H01L51/0545 , H01L51/055
摘要： A method of fabricating an organic electronic device is provided. The organic electronic device has a structure including an upper conductive layer and an underlying layer immediately beneath said upper conducting layer and having at least one solution process able semiconducting layer. The upper conducting layer preferably has a thickness of between 10 nm and 200 nm. The method includes patterning said upper conductive layer of said structure by: laser ablating said upper conductive layer using a pulsed laser to remove regions of upper conductive layer from said underlying layer for said patterning; and wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer to expose said underlying layer beneath
摘要翻译：提供一种制造有机电子器件的方法。有机电子器件具有包括在上导电层正下方的上导电层和下层的结构，并具有至少一个溶液加工半导体层。上导电层的厚度优选为10nm〜200nm。该方法包括：通过以下步骤对所述结构的所述上导电层进行图案化：使用脉冲激光激光烧蚀所述上导电层，以从所述下层移除用于所述图案化的上导电层的区域; 并且其中所述激光烧蚀使用所述激光器的单个脉冲基本上完全去除所述上导电层的所述区域，以暴露下面的下层

7. 发明授权

US08349673B2 Method of producing plurality of organic transistors using laser patterning 有权
标题翻译：使用激光图案化制造多个有机晶体管的方法
公开(公告)号：US08349673B2
公开(公告)日：2013-01-08
申请号：US11910806
申请日：2006-04-03
申请人： Paul A. Cain , Carl Hayton , Anoop Menon , Thomas M. Brown
发明人： Paul A. Cain , Carl Hayton , Anoop Menon , Thomas M. Brown
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L51/0017 , H01L27/283 , H01L27/3262 , H01L27/3274 , H01L51/0021 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0097 , H01L51/0541
摘要： A method of producing a plurality of transistors each including a source/drain electrode pair comprising a conductor material and a channel comprising semiconductor material between the source and drain electrodes of said source/drain electrode pair; the method comprising (i) forming over a substrate at least a first layer of said conductor material or a precursor thereto and a second layer of said semiconductor material or a precursor thereto; and (ii) thereafter removing selected portions of at least said first and second layers so as to define at least two adjacent source/drain electrode pairs that are unconnected to each other within said first and second layers.
摘要翻译：一种制造多个晶体管的方法，每个晶体管包括在所述源/漏电极对的源极和漏极之间包括导体材料的源/漏电极对和包括半导体材料的沟道; 所述方法包括（i）在衬底上形成至少第一层所述导体材料或其前体和第二层所述半导体材料或其前体; 以及（ii）此后移除至少所述第一和第二层的选定部分，以便限定在所述第一和第二层内彼此不连接的至少两个相邻的源/漏电极对。

8. 发明授权

US07629261B2 Patterning metal layers 有权
标题翻译：图案金属层
公开(公告)号：US07629261B2
公开(公告)日：2009-12-08
申请号：US11910813
申请日：2006-04-04
申请人： Paul A. Cain
发明人： Paul A. Cain
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L51/102 , H01L51/0017 , H01L51/0021 , H01L51/0023 , H01L51/0037 , H01L51/0541
摘要： A process for fabricating an electronic device comprising the step of patterning a metallic electrode to the electronic device by laser ablation followed by electroless plating, wherein the process of fabricating the electronic device comprises at least one other laser patterning step over the area of the metallic electrode performed after said step of patterning the metallic electrode.
摘要翻译：一种用于制造电子器件的方法，包括通过激光烧蚀将金属电极图案化以进行无电镀的步骤，其中制造电子器件的工艺包括在金属电极的区域上的至少一个其它激光器图案化步骤在图案化金属电极的步骤之后执行。

9. 发明申请

US20090298299A1 LASER ABLATION OF ELECTRONIC DEVICES 有权
标题翻译：电子设备的激光消除
公开(公告)号：US20090298299A1
公开(公告)日：2009-12-03
申请号：US12065722
申请日：2006-08-31
申请人： Paul A. Cain , Carl Hayton
发明人： Paul A. Cain , Carl Hayton
IPC分类号： H01L21/26
CPC分类号： H01L51/0023 , B23K26/0622 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/268 , H01L21/76838 , H05K3/027 , H05K3/4644 , H05K2201/09672
摘要： The present invention relates to methods of fabricating electronic devices using laser ablation and to devices fabricated thereby. Embodiments of the methods are particularly suitable for defining electrodes within thin film transistor (TFT) structures using laser ablation in a step-and-repeat mode. A method of fabricating an electronic device, the device comprising a plurality of layers on a substrate, the layers including an upper conductive layer and at least said conductive layer and said substrate, the method comprising: patterning said underlying layer; and patterning said upper conductive layer by laser ablation using a stepwise process in which successive areas of said upper conductive layer are ablated by successively applied laser patterns; wherein said successively applied laser patterns overlap one another in an overlap region; and wherein said method further comprises configuring a said laser pattern and said patterned underlying layer with respect to one another such that in a said overlap region said patterned underlying layer is substantially undamaged by said stepwise laser ablation.
摘要翻译：本发明涉及使用激光烧蚀制造电子器件的方法及其制造的器件。该方法的实施例特别适合于在步进重复模式中使用激光烧蚀来限定薄膜晶体管（TFT）结构内的电极。一种制造电子器件的方法，所述器件在衬底上包括多个层，所述层包括上导电层和至少所述导电层和所述衬底，所述方法包括：图案化所述下层; 以及通过使用逐步过程的激光烧蚀来图案化所述上导电层，其中所述上导电层的连续区域被依次施加的激光图案消融; 其中所述连续施加的激光图案在重叠区域中彼此重叠; 并且其中所述方法还包括相对于彼此配置所述激光图案和所述图案化的下层，使得在所述重叠区域中，所述图案化底层通过所述逐步激光烧蚀基本上未损坏。

10. 发明授权

US06950299B2 Non-linear capacitors 有权
标题翻译：非线性电容
公开(公告)号：US06950299B2
公开(公告)日：2005-09-27
申请号：US10777677
申请日：2004-02-13
申请人： Nicholas J. Stone , Paul A. Cain , Thomas M. Brown
发明人： Nicholas J. Stone , Paul A. Cain , Thomas M. Brown
IPC分类号： H01L21/02 , H01L27/08 , H01L29/94 , H01G4/228
CPC分类号： H01L28/40 , H01L27/0808 , H01L29/94
摘要： An electronic device including first, second and third conductor layers respectively arranged as the source, drain and gate electrodes of a field effect transistor, the third conductor layer being capacitively coupled with both the first and second conductor layers but with the second conductor layer to a greater degree than with the first conductor layer, wherein the electronic device is operable as a non-linear capacitor by applying an alternating voltage across the third conductor layer and the first conductor layer whilst leaving the second conductor layer at a floating potential. Also, an electronic device including a first pair of capacitively coupled first and second conductor layers and a second pair of capacitively coupled third and fourth conductor layers, wherein the first and third conductor layers and the second and fourth conductor layers are arranged as the drain and source electrodes of respective field effect transistors together with one or more gate electrodes conductively connected to either of the first and second conductor layers, wherein the electronic device is operable as a non-linear capacitor by applying an alternating voltage across the first and second conductor layers whilst leaving the third and fourth conductor layers at a floating potential.
摘要翻译：一种电子设备，包括分别布置为场效应晶体管的源极，漏极和栅电极的第一，第二和第三导体层，第三导体层与第一和第二导体层电容耦合，但是与第二导体层电容耦合到比第一导体层更大的程度，其中电子器件可通过在第二导体层和第一导体层之间施加交替电压而作为非线性电容器工作，同时使第二导体层处于浮动电位。另外，电子设备包括第一对电容耦合的第一和第二导体层和第二对电容耦合的第三和第四导体层，其中第一和第三导体层以及第二和第四导体层被布置为漏极和各个场效应晶体管的源电极与一个或多个导电连接到第一和第二导体层中的任一个的栅电极连接，其中电子器件可通过在第一和第二导体层上施加交流电压而作为非线性电容器操作同时使第三和第四导体层处于浮动电位。

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