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1. 发明授权

US06762128B2 Apparatus and method for manufacturing a semiconductor circuit 有权
标题翻译：用于制造半导体电路的装置和方法
公开(公告)号：US06762128B2
公开(公告)日：2004-07-13
申请号：US10177915
申请日：2002-06-20
申请人： Paul A. Bernkopf , Frederick T. Brady , Nadim Haddad
发明人： Paul A. Bernkopf , Frederick T. Brady , Nadim Haddad
IPC分类号： H01L21302
CPC分类号： H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/76229
摘要： A method and an apparatus for manufacturing, via a single fabrication line, circuits that are radiation tolerant and also circuits that are radiation intolerant. When production calls for radiation-tolerant circuits, low-pressure chemical vapor deposition is advantageously used to deposit an electrically-insulating material, such as silicon dioxide, in trenches to provide electrical isolation between adjacent semiconductor devices. When production requires radiation-intolerant circuits, as may be required for export, then the trenches are filled via a procedure that deposits an electrically-insulating material that, on exposure to ionizing radiation, generates a suitably large amount of “positive charge traps.” One procedure suitable for creating such positive charge traps is high-density plasma chemical vapor deposition (HDPCVD).
摘要翻译：一种用于通过单个制造线制造耐辐射电路以及辐射不耐受的电路的方法和装置。当生产要求耐辐射电路时，低压化学气相沉积有利地用于在沟槽中沉积诸如二氧化硅的电绝缘材料，以在相邻的半导体器件之间提供电隔离。当生产需要耐辐射电路时，可能需要输出电路，然后通过沉积电绝缘材料的程序来填充沟槽，这些电绝缘材料在暴露于电离辐射时产生适当大量的“正电荷陷阱”。适用于产生这种正电荷陷阱的一种方法是高密度等离子体化学气相沉积（HDPCVD）。

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