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1. 发明申请

US20050164412A1 Custom electrodes for molecular memory and logic devices 审中-公开
标题翻译：用于分子存储器和逻辑器件的定制电极
公开(公告)号：US20050164412A1
公开(公告)日：2005-07-28
申请号：US10995608
申请日：2004-11-22
申请人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/00
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method for tailoring at least portions of an exposed non-planar layered surface of a conductive layer formed on a substrate having a first surface roughness to provide the exposed surface with a second surface roughness. The method includes: forming the conductive layer on the substrate; and tailoring at least portions of the exposed surface of the conductive layer in a plasma to at least smooth the exposed surface of the conductive layer, whereby the second surface roughness is essentially the same as the first surface roughness.
摘要翻译：一种用于调整形成在具有第一表面粗糙度的基底上的导电层的暴露的非平面层状表面的至少一部分以提供具有第二表面粗糙度的暴露表面的方法。该方法包括：在基板上形成导电层; 以及在等离子体中定制导电层的暴露表面的至少部分，以至少平滑导电层的暴露表面，由此第二表面粗糙度基本上与第一表面粗糙度相同。

2. 发明申请

US20050026427A1 Custom electrodes for molecular memory and logic devices 审中-公开
标题翻译：用于分子存储器和逻辑器件的定制电极
公开(公告)号：US20050026427A1
公开(公告)日：2005-02-03
申请号：US10930062
申请日：2004-08-30
申请人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/00
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.
摘要翻译：提供了一种用于制造分子电子器件的方法，该分子电子器件至少包括底部电极和底部电极上的分子开关膜。该方法包括通过以下工艺形成底部电极，该方法包括：清洗要沉积底部电极的衬底的部分; 预溅射部分; 在至少部分上沉积导电层; 并清洁导电层的顶表面。有利地，导电电极的性质包括：低或受控的氧化物形成（或可能钝化），高熔点，高体积弹性模量和低扩散。光滑的沉积膜表面与Langmuir-Blodgett分子膜沉积相容。定制的表面对于SAM沉积是更有用的。金属性质使分子具有高导电性。阻挡层可以被添加到器件堆叠，即在导电层上的Al 2 O 3。

3. 发明申请

US20050032203A1 Custom electrodes for molecular memory and logic devices 审中-公开
公开(公告)号：US20050032203A1
公开(公告)日：2005-02-10
申请号：US10930398
申请日：2004-08-30
申请人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/00 , C12M1/34
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.

4. 发明申请

US20070252128A1 Switching device and methods for controlling electron tunneling therein 有权
标题翻译：用于控制电子隧穿的开关装置和方法
公开(公告)号：US20070252128A1
公开(公告)日：2007-11-01
申请号：US11414578
申请日：2006-04-28
申请人： R. Williams , Zhiyong Li , Douglas Ohlberg , Philip Kuekes , Duncan Stewart
发明人： R. Williams , Zhiyong Li , Douglas Ohlberg , Philip Kuekes , Duncan Stewart
IPC分类号： H01L29/02 , H01L47/00
CPC分类号： G11C13/02 , G11C13/0009 , G11C2213/77 , H01L51/0591
摘要： A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.
摘要翻译：开关装置包括至少一个底部电极和至少一个顶部电极。顶部电极以非零角度穿过底部电极，从而形成结。在底电极或顶电极中的至少一个上建立金属氧化物层。在连接处建立了包括有机分子单层和水分子源的分子层。在引入正向偏压时，分子层促进电极之间的氧化还原反应，从而减少电极之间的隧道间隙。

5. 发明授权

US06855647B2 Custom electrodes for molecular memory and logic devices 失效
公开(公告)号：US06855647B2
公开(公告)日：2005-02-15
申请号：US10405294
申请日：2003-04-02
申请人： Patricia A. Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia A. Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/26
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.

6. 发明授权

US08502198B2 Switching device and methods for controlling electron tunneling therein 有权
标题翻译：用于控制电子隧穿的开关装置和方法
公开(公告)号：US08502198B2
公开(公告)日：2013-08-06
申请号：US11414578
申请日：2006-04-28
申请人： R. Stanley Williams , Zhiyong Li , Douglas Ohlberg , Philip J. Kuekes , Duncan Stewart
发明人： R. Stanley Williams , Zhiyong Li , Douglas Ohlberg , Philip J. Kuekes , Duncan Stewart
IPC分类号： H01L29/08
CPC分类号： G11C13/02 , G11C13/0009 , G11C2213/77 , H01L51/0591
摘要： A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.
摘要翻译：开关装置包括至少一个底部电极和至少一个顶部电极。顶部电极以非零角度穿过底部电极，从而形成结。在底电极或顶电极中的至少一个上建立金属氧化物层。在连接处建立了包括有机分子单层和水分子源的分子层。在引入正向偏压时，分子层促进电极之间的氧化还原反应，从而减少电极之间的隧道间隙。

7. 发明申请

US20060003594A1 Molecules for langmuir-blodgett deposition of a molecular layer 审中-公开
标题翻译：分子层的分子沉积
公开(公告)号：US20060003594A1
公开(公告)日：2006-01-05
申请号：US10881681
申请日：2004-06-30
申请人： Sean Zhang , Douglas Ohlberg , Zhiyong Li
发明人： Sean Zhang , Douglas Ohlberg , Zhiyong Li
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： B05D1/204 , B05D3/105 , B05D3/14 , B82Y10/00 , B82Y30/00 , B82Y40/00
摘要： A molecule for Langmuir-Blodgett (LB) deposition of a molecular layer. The molecule includes at least one switching moiety, a hydrophilicity-modifiable connecting group attached to one end of the moiety, and a hydrophilicity-non-modifiable connecting group attached to the other end of the moiety. The hydrophilicity-modifiable connecting group is transformable to a temporary end group upon adjustment in pH of the aqueous environment containing the molecule. The temporary end group is more hydrophilic than the hydrophilicity-modifiable connecting group and the hydrophilicity-non-modifiable connecting group. The difference in hydrophilicity between the temporary end group and the hydrophilicity-non-modifiable connecting group causes formation of a substantially well-oriented, uniform LB film at a water/solvent and/or water/air interface.
摘要翻译：分子用于Langmuir-Blodgett（LB）沉积分子层。该分子包括至少一个切换部分，连接到该部分的一端的亲水性可修饰的连接基团和连接到部分的另一端的亲水性 - 不可修饰的连接基团。当调节包含分子的水性环境的pH时，亲水性可连接基团可转变成临时端基。临时端基比亲水性可连接基团和亲水性不可修饰的连接基团更亲水。临时端基与亲水不连接基团之间的亲水性差异导致在水/溶剂和/或水/空气界面处形成基本良好取向的均匀LB膜。

8. 发明申请

US20110266605A1 Memristive Transistor Memory 有权
标题翻译：忆阻晶体管内存
公开(公告)号：US20110266605A1
公开(公告)日：2011-11-03
申请号：US13142581
申请日：2009-01-30
申请人： Dmitri B. Strukov , Philip J. Kuekes , Duncan Stewart , Zhiyong Li
发明人： Dmitri B. Strukov , Philip J. Kuekes , Duncan Stewart , Zhiyong Li
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： G11C13/0002 , B82Y10/00 , H01L29/41758 , H01L29/517 , H01L29/685 , H01L29/775
摘要： A memory device (100) includes a semiconductor wire including a source region (132), a drain region (134), and a channel region (130) between the source region (132) and the drain region (134). A gate structure that overlies the channel region includes a memristive portion (120) and a conductive portion (110) overlying the memristive portion (120).
摘要翻译：存储器件（100）包括在源极区域（132）和漏极区域（134）之间包括源极区域（132），漏极区域（134）和沟道区域（130）的半导体器件。覆盖沟道区的栅极结构包括覆盖在忆阻部分（120）上的忆阻部分（120）和导电部分（110）。

9. 发明申请

US20090002701A1 Electric-field-enhancement structure and detection apparatus using same 有权
公开(公告)号：US20090002701A1
公开(公告)日：2009-01-01
申请号：US11823281
申请日：2007-06-26
申请人： David A. Fattal , Zhiyong Li , William M. Tong , Duncan Stewart , Jason Blackstock
发明人： David A. Fattal , Zhiyong Li , William M. Tong , Duncan Stewart , Jason Blackstock
IPC分类号： G01J3/44 , G02B6/34
CPC分类号： G02B6/1226 , B82Y15/00 , B82Y20/00 , G01N21/35 , G01N21/554 , G01N21/658 , G02B5/008
摘要： Various aspects of the present invention are directed to electric-field-enhancement structures and detection apparatuses that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure includes a substrate having a surface. The substrate is capable of supporting a planar mode having a planar-mode frequency. A plurality of nanofeatures is associated with the surface, and each of nanofeatures exhibits a localized-surface-plasmon mode having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.

10. 发明授权

US07466407B2 Photonic crystal Raman sensors and methods including the same 有权
标题翻译：光子晶体拉曼传感器和方法包括相同
公开(公告)号：US07466407B2
公开(公告)日：2008-12-16
申请号：US11413877
申请日：2006-04-27
申请人： Sean M. Spillane , Raymond G. Beausoleil , Zhiyong Li , Duncan Stewart
发明人： Sean M. Spillane , Raymond G. Beausoleil , Zhiyong Li , Duncan Stewart
IPC分类号： G01J3/44
CPC分类号： G01J3/44 , G01N21/658
摘要： Raman-enhancing structures include a photonic crystal having a resonant cavity and at least one waveguide coupled to the resonant cavity. A nanostructure comprising a Raman-enhancing material is disposed proximate the resonant cavity of the photonic crystal. Raman-enhancing structures include a microdisk resonator, at least one waveguide coupled to the microdisk resonator, and a nanostructure comprising a Raman-enhancing material disposed proximate the microdisk resonator. Methods for performing Raman spectroscopy include generating radiation, guiding the radiation through a waveguide to a resonant cavity in a photonic crystal or a microdisk resonator, resonating the radiation in the resonant cavity or microdisk resonator, providing an analyte proximate the resonant cavity or microdisk resonator, subjecting the analyte to the resonating radiation, and detecting Raman scattered radiation.
摘要翻译：拉曼增强结构包括具有谐振腔和耦合到谐振腔的至少一个波导的光子晶体。包含拉曼增强材料的纳米结构设置在光子晶体的谐振腔附近。拉曼增强结构包括微盘谐振器，耦合到微盘谐振器的至少一个波导和包括靠近微盘谐振器设置的拉曼增强材料的纳米结构。用于执行拉曼光谱的方法包括产生辐射，将辐射通过波导引导到光子晶体或微盘谐振器中的谐振腔，谐振谐振腔或微盘谐振器中的辐射，提供靠近谐振腔或微盘谐振器的分析物，对分析物进行共振辐射，并检测拉曼散射辐射。

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