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1. 发明申请

US20090002701A1 Electric-field-enhancement structure and detection apparatus using same 有权
公开(公告)号：US20090002701A1
公开(公告)日：2009-01-01
申请号：US11823281
申请日：2007-06-26
申请人： David A. Fattal , Zhiyong Li , William M. Tong , Duncan Stewart , Jason Blackstock
发明人： David A. Fattal , Zhiyong Li , William M. Tong , Duncan Stewart , Jason Blackstock
IPC分类号： G01J3/44 , G02B6/34
CPC分类号： G02B6/1226 , B82Y15/00 , B82Y20/00 , G01N21/35 , G01N21/554 , G01N21/658 , G02B5/008
摘要： Various aspects of the present invention are directed to electric-field-enhancement structures and detection apparatuses that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure includes a substrate having a surface. The substrate is capable of supporting a planar mode having a planar-mode frequency. A plurality of nanofeatures is associated with the surface, and each of nanofeatures exhibits a localized-surface-plasmon mode having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.

2. 发明授权

US07639355B2 Electric-field-enhancement structure and detection apparatus using same 有权
标题翻译：电场增强结构及使用其的检测装置
公开(公告)号：US07639355B2
公开(公告)日：2009-12-29
申请号：US11823281
申请日：2007-06-26
申请人： David A. Fattal , Zhiyong Li , William M. Tong , Duncan Stewart , Jason Blackstock
发明人： David A. Fattal , Zhiyong Li , William M. Tong , Duncan Stewart , Jason Blackstock
IPC分类号： G01J3/44
CPC分类号： G02B6/1226 , B82Y15/00 , B82Y20/00 , G01N21/35 , G01N21/554 , G01N21/658 , G02B5/008
摘要： Various aspects of the present invention are directed to electric-field-enhancement structures and detection apparatuses that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure includes a substrate having a surface. The substrate is capable of supporting a planar mode having a planar-mode frequency. A plurality of nanofeatures is associated with the surface, and each of nanofeatures exhibits a localized-surface-plasmon mode having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.
摘要翻译：本发明的各个方面涉及采用这种电场增强结构的电场增强结构和检测装置。在本发明的一个方面中，电场增强结构包括具有表面的基板。基板能够支持具有平面模式频率的平面模式。多个纳米尺度与表面相关联，并且每个纳米尺度表现出具有近似等于平面模式频率的局部表面等离子体激元频率的局部表面等离子体模式。

3. 发明授权

US07763552B2 Method of interconnect formation using focused beams 有权
标题翻译：使用聚焦光束的互连形成方法
公开(公告)号：US07763552B2
公开(公告)日：2010-07-27
申请号：US11413476
申请日：2006-04-28
申请人： William M. Tong , Duncan Stewart , R. Stanley Williams , Manish Sharma , Zhiyong Li , Gary A. Gibson
发明人： William M. Tong , Duncan Stewart , R. Stanley Williams , Manish Sharma , Zhiyong Li , Gary A. Gibson
IPC分类号： H01L21/768 , H01L21/62
CPC分类号： H01L21/76892 , H01L21/76823 , H01L23/5254 , H01L27/1052 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： A method of forming an electrical interconnect, which includes a first electrode, an interlayer of a programmable material disposed over at least a portion of the first electrode, and a second electrode disposed over the programmable material at a non-zero angle relative to the first electrode. The interlayer includes a modified region having differing electrical properties than the rest of the interlayer, sandwiched at the junction of the first electrode and the second electrode. The interlayer may be exposed to a focused beam to form the modified region.
摘要翻译：一种形成电互连的方法，包括第一电极，设置在第一电极的至少一部分上的可编程材料的中间层，以及设置在可编程材料上的第二电极，相对于第一电极以非零角度电极。中间层包括夹在第一电极和第二电极的接合处的与中间层的其余部分不同的电特性的改性区域。中间层可以暴露于聚焦光束以形成改质区域。

4. 发明授权

US07780841B2 E-field induced ion selective molecular deposition onto sensor arrays 失效
标题翻译：电场诱导离子选择性分子沉积到传感器阵列上
公开(公告)号：US07780841B2
公开(公告)日：2010-08-24
申请号：US11059258
申请日：2005-02-15
申请人： Sean Xiao-An Zhang , Zhiyong Li , Zhang-Lin Zhou , William M. Tong , R. Stanley Williams , Yong Chen
发明人： Sean Xiao-An Zhang , Zhiyong Li , Zhang-Lin Zhou , William M. Tong , R. Stanley Williams , Yong Chen
IPC分类号： G01N27/327
CPC分类号： G01N33/5308 , G01N33/5438 , G01N2430/00
摘要： A sensor array for sensing at least one of chemical moieties and biological moieties is provided. The sensor array comprises a plurality of working electrodes electrically associated with a reference electrode, each working electrode in combination with the reference electrode forming a transducer. Each working electrode is provided with a coating of a sensing element comprised of an ionizable moiety and a functional group sensitive to one of the chemical and/or biological moieties.
摘要翻译：提供了用于感测化学部分和生物部分中的至少一个的传感器阵列。传感器阵列包括与参考电极电连接的多个工作电极，每个工作电极与参考电极组合形成换能器。每个工作电极设置有由可电离部分和对化学和/或生物部分之一敏感的官能团组成的感测元件的涂层。

5. 发明申请

US20110176353A1 Memristive Device Having a Porous Dopant Diffusion Element 有权
标题翻译：具有多孔掺杂扩散元件的忆阻器件
公开(公告)号：US20110176353A1
公开(公告)日：2011-07-21
申请号：US13120904
申请日：2008-12-23
申请人： Zhiyong Li , Fung Suong Ou , William M. Tong
发明人： Zhiyong Li , Fung Suong Ou , William M. Tong
IPC分类号： G11C11/56 , H01L45/00
CPC分类号： G11C13/0011 , B82Y10/00 , G11C11/56 , G11C13/00 , G11C13/0002 , G11C13/0069 , G11C13/02 , G11C13/025 , G11C2013/009 , G11C2213/35 , G11C2213/55 , G11C2213/56 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： A memristive device (400) includes: a first electrode (405); a second electrode (425); a memristive matrix (415) interposed between the first electrode (405) and the second electrode (425); a porous dopant diffusion element (410) in physical contact with the memristive matrix (415) and in proximity to the first electrode (405) and the second electrode (425); and a first mobile dopant species which moves through the porous dopant diffusion element (410) in response to a programming electrical field. A method for using a memristive device (400) having a porous dopant diffusion element (410) includes applying a voltage bias to generate a programming electrical field such that dopants move through the porous dopant diffusion element (410), thereby changing the distribution of dopants within a memristive matrix (415) to form a first state; removing the voltage bias, the dopants being substantially immobile in the absence of the programming electrical field; and applying a reading energy to the memristive device (400) to sense the first state.
摘要翻译：忆阻器（400）包括：第一电极（405）; 第二电极（425）; 插入在第一电极（405）和第二电极（425）之间的忆阻矩阵（415）; 与所述忆阻矩阵（415）物理接触并且接近所述第一电极（405）和所述第二电极（425）的多孔掺杂剂扩散元件（410）; 以及响应于编程电场而移动通过多孔掺杂剂扩散元件（410）的第一移动掺杂物种类。使用具有多孔掺杂剂扩散元件（410）的忆阻器（400）的方法包括施加电压偏压以产生编程电场，使得掺杂剂通过多孔掺杂剂扩散元件（410）移动，由此改变掺杂剂的分布在忆阻矩阵（415）内形成第一状态; 去除电压偏压，掺杂剂在没有编程电场的情况下基本上是不可移动的; 以及将读取能量施加到所述忆阻装置（400）以感测所述第一状态。

6. 发明授权

US08330951B2 Nano-enhanced Raman spectroscopy substrate packaging structure 有权
标题翻译：纳米增强拉曼光谱基板封装结构
公开(公告)号：US08330951B2
公开(公告)日：2012-12-11
申请号：US11413516
申请日：2006-04-28
申请人： Zhiyong Li , William M. Tong , R. Stanley Williams
发明人： Zhiyong Li , William M. Tong , R. Stanley Williams
IPC分类号： G01J3/44 , G01N33/00 , G01N21/62 , H01J9/12
CPC分类号： G01N21/658 , Y10T428/218 , Y10T428/28
摘要： Packaged NERS-active structures are disclosed that include a NERS substrate having a NERS-active structure thereon, and a packaging substrate over the NERS substrate having an opening therethrough, the opening in alignment with the NERS-active structure. A membrane may cover the opening in the packaging substrate. In order to perform nanoenhanced Raman spectroscopy, the membrane may be removed, and an analyte placed on the NERS substrate adjacent the NERS-active structure. The membrane may be replaced with another membrane after the analyte has been placed on the substrate. The membrane may maintain the pristine state of the substrate before it is deployed, and the replacement membrane may preserve the substrate and analyte for archival purposes. Also disclosed are methods for performing NERS with packaged NERS-active structures.
摘要翻译：公开了封装的NERS-活性结构，其包括其上具有NERS-活性结构的NERS衬底和在NERS衬底上的具有穿过其中的开口的封装衬底，该开口与NERS-活性结构对准。膜可以覆盖封装衬底中的开口。为了进行纳米增强拉曼光谱，可以去除膜，并将分析物放置在邻近NERS-活性结构的NERS衬底上。在将分析物放置在基底上之后，膜可以用另一膜替代。膜可以在其被部署之前保持基材的原始状态，并且替换膜可以保留底物和分析物用于归档目的。还公开了使用封装的NERS-活性结构来执行NERS的方法。

7. 发明授权

US08780606B2 Memristive device having a porous dopant diffusion element 有权
标题翻译：具有多孔掺杂剂扩散元件的忆阻器件
公开(公告)号：US08780606B2
公开(公告)日：2014-07-15
申请号：US13120904
申请日：2008-12-23
申请人： Zhiyong Li , Fung Suong Ou , William M. Tong
发明人： Zhiyong Li , Fung Suong Ou , William M. Tong
IPC分类号： G11C11/00 , G11C13/00 , B82Y10/00 , G11C11/56 , G11C13/02 , H01L45/00
CPC分类号： G11C13/0011 , B82Y10/00 , G11C11/56 , G11C13/00 , G11C13/0002 , G11C13/0069 , G11C13/02 , G11C13/025 , G11C2013/009 , G11C2213/35 , G11C2213/55 , G11C2213/56 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： A memristive device includes: a first electrode; a second electrode; a memristive matrix interposed between the first electrode and the second electrode; a porous dopant diffusion element in physical contact with the memristive matrix and in proximity to the first electrode and the second electrode; and a first mobile dopant species which moves through the porous dopant diffusion element in response to a programming electrical field. A method for using a memristive device having a porous dopant diffusion element includes applying a voltage bias to generate a programming electrical field such that dopants move through the porous dopant diffusion element, thereby changing the distribution of dopants within a memristive matrix to form a first state; removing the voltage bias, the dopants being substantially immobile in the absence of the programming electrical field; and applying a reading energy to the memristive device to sense the first state.
摘要翻译：忆阻器包括：第一电极; 第二电极; 夹在第一电极和第二电极之间的忆阻矩阵; 与所述忆阻基体物理接触并且靠近所述第一电极和所述第二电极的多孔掺杂剂扩散元件; 以及响应于编程电场移动穿过多孔掺杂剂扩散元件的第一移动掺杂物种类。使用具有多孔掺杂剂扩散元件的忆阻器件的方法包括施加电压偏置以产生编程电场，使得掺杂剂移动穿过多孔掺杂剂扩散元件，由此改变在忆阻矩阵内的掺杂剂的分布以形成第一状态 ; 去除电压偏压，掺杂剂在没有编程电场的情况下基本上是不可移动的; 以及向所述忆阻器施加读取能量以感测所述第一状态。

8. 发明授权

US08766228B2 Electrically actuated device and method of controlling the formation of dopants therein 有权
标题翻译：电动装置及其中控制掺杂剂形成的方法
公开(公告)号：US08766228B2
公开(公告)日：2014-07-01
申请号：US13121133
申请日：2008-10-29
申请人： Jianhua Yang , Duncan Stewart , Philip J. Kuekes , William M. Tong
发明人： Jianhua Yang , Duncan Stewart , Philip J. Kuekes , William M. Tong
IPC分类号： H01L21/00
CPC分类号： H01L27/10 , H01L21/2254 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1658 , H01L45/1675
摘要： An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.
摘要翻译：电驱动装置包括第一电极，第二电极和设置在第一和第二电极之间的有源区。该器件还包括位于i）第一电极和有源区之间的界面处的掺杂剂引发剂或掺杂剂中的至少一种，或ii）第二电极和有源区，或iii）活性区和第一和第二电极。

9. 发明申请

US20120133026A1 Electrically Actuated Device And Method Of Controlling The Formation Of Dopants Therein 有权
标题翻译：电动驱动装置及控制掺杂剂形成的方法
公开(公告)号：US20120133026A1
公开(公告)日：2012-05-31
申请号：US13121133
申请日：2008-10-29
申请人： Jianhua Yang , Duncan Stewart , Phillip J. Kuekes , William M. Tong
发明人： Jianhua Yang , Duncan Stewart , Phillip J. Kuekes , William M. Tong
IPC分类号： H01L29/36 , H01L21/22
CPC分类号： H01L27/10 , H01L21/2254 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1658 , H01L45/1675
摘要： An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.
摘要翻译：电驱动装置包括第一电极，第二电极和设置在第一和第二电极之间的有源区。该器件还包括位于i）第一电极和有源区之间的界面处的掺杂剂引发剂或掺杂剂中的至少一种，或ii）第二电极和有源区，或iii）活性区和第一和第二电极。

10. 发明授权

US08471234B2 Multilayer memristive devices 有权
标题翻译：多层忆阻器
公开(公告)号：US08471234B2
公开(公告)日：2013-06-25
申请号：US13130815
申请日：2009-01-20
申请人： William M. Tong , Nathaniel J. Quitoriano , Duncan Stewart , Philip J. Kuekes
发明人： William M. Tong , Nathaniel J. Quitoriano , Duncan Stewart , Philip J. Kuekes
IPC分类号： H01L47/00
CPC分类号： H01L21/26586 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/165
摘要： A multilayer memristive device includes a first electrode; a second electrode; a first memristive region and a second memristive region which created by directional ion implantation of dopant ions and are interposed between the first electrode and the second electrode; and mobile dopants which move within the first memristive region and the second memristive region in response to an applied electrical field.
摘要翻译：多层记忆装置包括第一电极; 第二电极; 通过定向离子注入掺杂剂离子而形成的第一忆阻区和第二忆阻区，并且介于第一电极和第二电极之间; 以及响应于施加的电场在第一忆阻区域和第二忆阻区域内移动的移动掺杂剂。

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