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1. 发明授权

US5605865A Method for forming self-aligned silicide in a semiconductor device using vapor phase reaction 失效
标题翻译：在使用气相反应的半导体器件中形成自对准硅化物的方法
公开(公告)号：US5605865A
公开(公告)日：1997-02-25
申请号：US416124
申请日：1995-04-03
申请人： Papu D. Maniar , Arkalgud R. Sitaram
发明人： Papu D. Maniar , Arkalgud R. Sitaram
IPC分类号： H01L21/285
CPC分类号： H01L21/28518
摘要： Self-aligned silicide regions (24) are formed in a semiconductor device (10) using vapor phase reaction. A chemical vapor deposition system (40) is used, but rather than depositing a blanket silicide material, a precursor (48) is introduced into the reaction chamber (42) and reacts with only exposed silicon and polysilicon members of the device. The reaction is assisted by heating the substrate to a temperature at which the precursor is volatile. Because the precursor source reacts only with exposed silicon and polysilicon regions, subsequent etch steps are unnecessary. In one form, cobalt silicide regions are formed using a cobalt carbonyl as the precursor source.
摘要翻译：使用气相反应在半导体器件（10）中形成自对准硅化物区域（24）。使用化学气相沉积系统（40），而不是沉积覆盖层硅化物材料，前体（48）被引入反应室（42）中，并且仅与设备的暴露的硅和多晶硅构件反应。通过将基底加热到前体挥发性的温度来辅助反应。因为前体源仅与暴露的硅和多晶硅区域反应，所以后续的蚀刻步骤是不必要的。在一种形式中，使用羰基钴作为前体源形成钴硅化物区域。

2. 发明授权

US07320931B2 Interfacial layer for use with high k dielectric materials 有权
标题翻译：用于高k电介质材料的界面层
公开(公告)号：US07320931B2
公开(公告)日：2008-01-22
申请号：US10903841
申请日：2004-07-30
申请人： Shawn G. Thomas , Vida Ilderem , Papu D. Maniar
发明人： Shawn G. Thomas , Vida Ilderem , Papu D. Maniar
IPC分类号： H01L29/72
CPC分类号： H01L21/022 , H01L21/02164 , H01L21/02175 , H01L21/0237 , H01L21/02532 , H01L21/02617 , H01L21/02664 , H01L21/28255 , H01L21/31641 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus are provided for depositing a layer of pure germanium can on a silicon substrate. This germanium layer is very thin, on the order of about 14 Å, and is less than the critical thickness for pure germanium on silicon. The germanium layer serves as an intermediate layer between the silicon substrate and the high k gate layer, which is deposited on the germanium layer. The germanium layer helps to avoid the development of an oxide interfacial layer during the application of the high k material. Application of the germanium intermediate layer in a semiconductor structure results in a high k gate functionality without the drawbacks of series capacitance due to oxide impurities. The germanium layer further improves mobility.
摘要翻译：提供了用于在硅衬底上沉积纯锗罐的层的方法和装置。该锗层非常薄，约为14埃，并且小于硅上的纯锗的临界厚度。锗层用作硅衬底和沉积在锗层上的高k栅极层之间的中间层。锗层有助于避免在施加高k材料时氧化物界面层的发展。锗中间层在半导体结构中的应用导致高k栅极功能，而不会由于氧化物杂质而导致串联电容的缺点。锗层进一步提高了移动性。

3. 发明授权

US6127257A Method of making a contact structure 失效
标题翻译：制作接触结构的方法
公开(公告)号：US6127257A
公开(公告)日：2000-10-03
申请号：US154366
申请日：1993-11-18
申请人： Faivel S. Pintchovski , John R. Yeargain , Papu D. Maniar
发明人： Faivel S. Pintchovski , John R. Yeargain , Papu D. Maniar
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/7685 , H01L21/76852 , H01L21/76885 , H01L23/5226 , H01L2221/1078 , H01L23/53223 , H01L23/53257 , H01L2924/0002
摘要： An improved contact structure and process for forming an improved contact structure for a semiconductor device. A metal (14) is formed on a first metal layer (12) positioned on a substrate (10) The metal (14) is a Group VIIB or Group VIII metal or metal oxide and increases the electrically conductive surface area (25) of the first metal layer (12). In one embodiment, a Group VIIB or Group VIII metal layer is deposited onto the first metal layer and the Group VIIB or Group VIII metal layer is anisotropically etched to form sidewall spacers (24). An insulating layer (16) is deposited overlying the first conductive layer (12) and the sidewall spacers (24). A via opening (18) is formed in the insulation layer (16) to expose a portion of the electrically conductive surface area (25). A second metal layer (22) fills the opening (18) and forms a metallurgical contact to the first metal layer (12).
摘要翻译：用于形成用于半导体器件的改进的接触结构的改进的接触结构和工艺。在位于基板（10）上的第一金属层（12）上形成金属（14）。金属（14）是VIIB族或VIII族金属或金属氧化物，并且增加了导电表面积（25）第一金属层（12）。在一个实施方案中，将第VIIB族或第VIII族金属层沉积到第一金属层上，并且第VIIB族或第VIII族金属层被各向异性蚀刻以形成侧壁间隔物（24）。绝缘层（16）沉积在第一导电层（12）和侧壁间隔物（24）上。在绝缘层（16）中形成通孔（18），以暴露导电表面区域（25）的一部分。第二金属层（22）填充开口（18）并与第一金属层（12）形成冶金接触。

4. 发明授权

US5910680A Germanium silicate spin on glass semiconductor device and methods of spin on glass synthesis and use 失效
标题翻译：玻璃硅酸盐旋涂玻璃半导体器件及玻璃合成和使用方法
公开(公告)号：US5910680A
公开(公告)日：1999-06-08
申请号：US215170
申请日：1994-03-21
申请人： Papu D. Maniar
发明人： Papu D. Maniar
IPC分类号： H01L21/316 , H01L23/58
CPC分类号： H01L21/316
摘要： A semiconductor device (11) has a spin on glass layer or region, and the spin on glass has a method of synthesis and use. The spin on glass composition is formed which comprises on the order of 0% to 20% by volume of tetraethylorthosilicate (TEOS), on the order of 0.01% to 20% by volume of tetraethylorthogermanate (TEOG), on the order of 0% to 1% by volume the equivalent of nitric acid (HNO.sub.3), on the order of 70% to 85% by volume of alcohol, and a remaining balance of the spin on glass composition being water. The spin on glass is applied to a semiconductor substrate and heated and/or densified to form the spin on glass layer or region.
摘要翻译：半导体器件（11）具有在玻璃层或区域上的自旋，并且玻璃上的旋涂具有合成和使用的方法。形成旋涂玻璃组合物，其含量为约0〜20体积％的原硅酸四乙酯（TEOS），为约0.01-20体积％的四乙基原硅酸酯（TEOG），为0〜相当于硝酸（HNO 3）1体积％，醇的体积百分数为70〜85体积％，玻璃组合物的旋转余量为水。将玻璃上的旋涂施加到半导体衬底上并加热和/或致密化以在玻璃层或区域上形成自旋。

5. 发明授权

US5702981A Method for forming a via in a semiconductor device 失效
标题翻译：在半导体器件中形成通孔的方法
公开(公告)号：US5702981A
公开(公告)日：1997-12-30
申请号：US536537
申请日：1995-09-29
申请人： Papu D. Maniar , Roc Blumenthal , Jeffrey L. Klein , Wei Wu
发明人： Papu D. Maniar , Roc Blumenthal , Jeffrey L. Klein , Wei Wu
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76802 , H01L21/76834 , Y10S438/97
摘要： A method for forming vias in a semiconductor device improves the resistance and reliability of contacts formed by use of an etch stop layer during the via formation process. An etch stop layer (40), preferably a silicon nitride or aluminum nitride layer, is deposited over conductive interconnect (34). A via (44) is etched in interlayer dielectric (42), stopping on etch stop layer (40). Etch stop layer (40) is then anisotropicly etched to expose the top of conductive interconnect (34), while maintaining a portion of the etch stop layer along a sidewall of the interconnect, and particularly along those sidewall portions which contain aluminum. A conductive plug (54) is then formed in the via, preferably using one or more barrier or glue layers (50). Formation of a tungsten plug using tungsten hexafluoride can then be performed without unwanted reactions between the tungsten source gas and the aluminum interconnect.
摘要翻译：用于在半导体器件中形成通孔的方法通过在通孔形成工艺期间通过使用蚀刻停止层来改善形成的触点的电阻和可靠性。蚀刻停止层（40），优选氮化硅或氮化铝层，沉积在导电互连（34）上。在层间电介质（42）中蚀刻通孔（44），停止在蚀刻停止层（40）上。然后对蚀刻停止层（40）进行各向异性蚀刻以暴露导电互连（34）的顶部，同时沿着互连的侧壁，特别是沿着包含铝的侧壁部分保留蚀刻停止层的一部分。然后，优选地使用一个或多个阻挡层或胶层（50）在通孔中形成导电插塞（54）。然后可以进行使用六氟化钨形成钨塞，而不会在钨源气体和铝互连之间产生不必要的反应。

6. 发明授权

US5677231A Method for providing trench isolation 失效
标题翻译：提供沟槽隔离的方法
公开(公告)号：US5677231A
公开(公告)日：1997-10-14
申请号：US656817
申请日：1996-06-03
申请人： Papu D. Maniar , Robert W. Fiordalice
发明人： Papu D. Maniar , Robert W. Fiordalice
IPC分类号： H01L21/28 , H01L21/60 , H01L21/762 , H01L21/768 , H01L21/76
CPC分类号： H01L21/76897 , H01L21/28 , H01L21/76224 , H01L21/76802 , Y10S148/02 , Y10S438/97
摘要： A trench isolation region (32) is fabricated to include a trench liner (28) comprised of aluminum nitride. The aluminum nitride trench liner is useful in borderless contact applications wherein a contact opening (56) is etched in an interlayer dielectric (54) and overlies both an active region. (e.g. doped region 52) and the trench isolation region. During formation of opening using etch chemistry which is selective to aluminum nitride, the trench liner protects a P-N junction at a corner region (58) of the trench to prevent exposing the junction. By protecting the junction, subsequent formation of a conductive plug (60) will not electrically short circuit the junction, and will keep diode leakage to within acceptable levels.
摘要翻译：制造沟槽隔离区域（32）以包括由氮化铝构成的沟槽衬垫（28）。氮化铝沟槽衬套可用于无边界接触应用中，其中在层间电介质（54）中蚀刻接触开口（56）并覆盖有源区域。（例如，掺杂区域52）和沟槽隔离区域。在使用对氮化铝有选择性的蚀刻化学形成开口期间，沟槽衬垫保护沟槽的拐角区域（58）处的P-N结以防止接合。通过保护接头，随后形成导电插塞（60）将不会使接头电短路，并将二极管泄漏保持在可接受的水平内。

7. 发明申请

US20130147850A1 METHOD AND DEVICE FOR FORCE SENSING GESTURE RECOGNITION 审中-公开
标题翻译：用于感觉手势识别的方法和装置
公开(公告)号：US20130147850A1
公开(公告)日：2013-06-13
申请号：US13314265
申请日：2011-12-08
申请人： Hao Li , Papu D. Maniar , Yi Wei
发明人： Hao Li , Papu D. Maniar , Yi Wei
IPC分类号： G09G5/00
CPC分类号： G06F3/017 , G06F1/1694 , G06F3/0346 , G06F3/0414 , G06F3/0485
摘要： A method and device for force sensing gesture recognition includes a processor, a motion detector, and a force detector. A motion detector senses a motion of the mobile device corresponding to a gesture and generates gesture data, the gesture data indicative of a command to be executed. A force sensor senses a magnitude of applied force and generates force data. The magnitude of applied force is indicative of a mode in which the command is to be executed. The processor is coupled to the motion detector and the force sensor. The processor executes the command as a function of the gesture data and the force data.
摘要翻译：用于力感测手势识别的方法和装置包括处理器，运动检测器和力检测器。运动检测器感测与手势相对应的移动装置的运动，并生成指示要执行的命令的手势数据。力传感器感测施加的力的大小并产生力数据。施加力的大小表示要执行命令的模式。处理器耦合到运动检测器和力传感器。处理器根据手势数据和力数据执行命令。

8. 发明授权

US5696394A Capacitor having a metal-oxide dielectric 失效
标题翻译：具有金属氧化物电介质的电容器
公开(公告)号：US5696394A
公开(公告)日：1997-12-09
申请号：US664327
申请日：1996-06-14
申请人： Robert Edwin Jones, Jr. , Papu D. Maniar , Andrew C. Campbell , Reza Moazzami
发明人： Robert Edwin Jones, Jr. , Papu D. Maniar , Andrew C. Campbell , Reza Moazzami
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L29/92
CPC分类号： H01L27/10808 , H01L28/55
摘要： A capacitor with a metal-oxide dielectric layer is formed with an upper electrode layer that is electrically connected to an underlying circuit element. The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element, such as a source/drain region of a transistor, a metal-oxide capacitor is formed over the circuit element. An opening is formed through the capacitor and extends to the circuit element. An insulating spacer is formed, and a conductive member is formed that electrically connects the circuit element to the upper electrode layer of the metal-oxide capacitor. Devices including DRAM and NVRAM cells and methods of forming them are disclosed.
摘要翻译：具有金属氧化物电介质层的电容器形成有电连接到下面的电路元件的上电极层。电容器可用于形成用于DRAM和NVRAM单元的存储电容器。在形成诸如晶体管的源极/漏极区域的底层电路元件之后，在电路元件上形成金属氧化物电容器。通过电容器形成开口并延伸到电路元件。形成绝缘间隔物，并且形成将电路元件与金属氧化物电容器的上电极层电连接的导电部件。公开了包括DRAM和NVRAM单元的器件及其形成方法。

9. 发明授权

US5525191A Process for polishing a semiconductor substrate 失效
标题翻译：抛光半导体衬底的工艺
公开(公告)号：US5525191A
公开(公告)日：1996-06-11
申请号：US280233
申请日：1994-07-25
申请人： Papu D. Maniar , Chris C. Yu
发明人： Papu D. Maniar , Chris C. Yu
IPC分类号： B24B37/04 , C09G1/02 , H01L21/306
CPC分类号： C09G1/02 , B24B37/044
摘要： The selection of pH, the polishing slurry, and types of polishing particles within a polishing slurry are chosen, so that polishing product is capable of coating onto the polishing particles. More specifically, the pH of the polishing slurry is selected to be between the iso-electric points of the polishing product and the particles within the polishing slurry. More than one type of material may be used within a polishing slurry. Particles of one material may do most of the polishing, while the particles of the other material become coated with polishing product and aid in transporting it away from the substrate.
摘要翻译：选择pH，抛光浆料和抛光浆料中的抛光颗粒的类型，使抛光产品能够涂覆在抛光颗粒上。更具体地说，抛光浆料的pH选择在抛光产品的等电点和抛光浆料内的颗粒之间。在抛光浆料中可以使用多种类型的材料。一种材料的颗粒可以进行大部分的抛光，而另一种材料的颗粒变成被抛光产品涂覆并有助于将其从衬底传送出去。

10. 发明授权

US5510651A Semiconductor device having a reducing/oxidizing conductive material 失效
标题翻译：具有还原/氧化导电材料的半导体器件
公开(公告)号：US5510651A
公开(公告)日：1996-04-23
申请号：US342293
申请日：1994-11-18
申请人： Papu D. Maniar , Reza Moazzami , C. Joseph Mogab
发明人： Papu D. Maniar , Reza Moazzami , C. Joseph Mogab
IPC分类号： H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8246 , H01L23/522 , H01L23/532 , H01L27/04 , H01L27/105 , H01L27/115 , H01L29/43 , H01L29/45 , H01G4/10
CPC分类号： H01L27/11502 , H01L21/76849 , H01L23/5226 , H01L23/53209 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L28/40 , H01L28/60 , H01L29/43 , H01L29/456 , H01L28/55 , H01L2924/0002
摘要： The present invention includes a semiconductor device having a layer including an elemental metal and its conductive metal oxide, wherein the layer is capable being oxidized or reduced preferentially to an adjacent region of the device. The present invention also includes processes for forming the devices. Substrate regions, silicon-containing layers, dielectric layers, electrodes, barrier layers, contact and via plugs, interconnects, and ferroelectric capacitors may be protected by and/or formed with the layer. Examples of elemental metals and their conductive metal oxides that may be used with the present invention are: ruthenium and ruthenium dioxide, rhenium and rhenium dioxide, iridium and iridium dioxide, osmium and osmium tetraoxide, or the like.
摘要翻译：本发明包括具有包含元素金属和其导电金属氧化物的层的半导体器件，其中该层能够被优先地氧化或还原成该器件的相邻区域。本发明还包括用于形成装置的方法。衬底区域，含硅层，电介质层，电极，阻挡层，接触和通孔插塞，互连和铁电电容器可以由层保护和/或形成。可用于本发明的元素金属及其导电金属氧化物的实例是：钌和二氧化钌，铼和二氧化铼，铱和二氧化铱，锇和四氧化锇等。

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