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1. 发明授权

US08513683B2 Optical integrated semiconductor light emitting device 有权
标题翻译：光集成半导体发光器件
公开(公告)号：US08513683B2
公开(公告)日：2013-08-20
申请号：US11344468
申请日：2006-01-31
申请人： Osamu Maeda , Tsuyoshi Fujimoto , Motonobu Takeya , Toshihiro Hashidu , Masaki Shiozaki , Yoshio Oofuji
发明人： Osamu Maeda , Tsuyoshi Fujimoto , Motonobu Takeya , Toshihiro Hashidu , Masaki Shiozaki , Yoshio Oofuji
IPC分类号： H01L33/00
CPC分类号： H01S5/2201 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/025 , H01S5/0206 , H01S5/0217 , H01S5/026 , H01S5/34333 , H01S5/4031
摘要： An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).
摘要翻译：通过防止漏电流流过衬底的高缺陷区域来提供具有改善的发光效率的光学集成半导体发光器件。光集成半导体发光器件包括：基板，其中在由具有第一平均位错密度的晶体制成的低缺陷区域中，包括具有高于第一平均位错密度的第二平均位错密度的一个或多个高缺陷区域 ; 和形成在基板上的III-V族氮化物半导体层，具有多个发光器件结构，并且在包括对应于高缺陷区域的区域（高缺陷区域）的区域中具有沟槽。

2. 发明申请

US20060192209A1 Optical integrated semiconductor light emitting device 有权
公开(公告)号：US20060192209A1
公开(公告)日：2006-08-31
申请号：US11344468
申请日：2006-01-31
申请人： Osamu Maeda , Tsuyoshi Fujimoto , Motonobu Takeya , Toshihiro Hashidu , Masaki Shiozaki , Yoshio Oofuji
发明人： Osamu Maeda , Tsuyoshi Fujimoto , Motonobu Takeya , Toshihiro Hashidu , Masaki Shiozaki , Yoshio Oofuji
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01S5/2201 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/025 , H01S5/0206 , H01S5/0217 , H01S5/026 , H01S5/34333 , H01S5/4031
摘要： An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).

3. 发明授权

US08385381B2 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US08385381B2
公开(公告)日：2013-02-26
申请号：US11427003
申请日：2006-06-28
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Yuji Masui
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Yuji Masui
IPC分类号： H01S5/00
CPC分类号： H01S5/18391 , H01S5/18313 , H01S5/18325 , H01S5/18327 , H01S5/18338 , H01S5/18344 , H01S5/18355 , H01S2301/166
摘要： In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.
摘要翻译：在VCSEL中，依次层叠第一多层膜反射体，具有发光中心区域的有源层，第二多层膜反射体，横模式调整层。第一多层膜反射器具有四边形电流注入区域，对应于发光中心区域的对角线交叉。第二多层膜反射器具有设置在对应于当前注入区域的一个对角线的区域中的发光窗口和设置在其间的发光窗口的一对凹槽。相对于发光窗设置横向模式调整层，其周边区域的反射率低于其中央区域的反射率。

4. 发明授权

US08363689B2 Laser diode array, method of manufacturing same, printer, and optical communication device 有权
公开(公告)号：US08363689B2
公开(公告)日：2013-01-29
申请号：US13064218
申请日：2011-03-11
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/187
CPC分类号： H01S5/423 , H01L2224/18 , H01L2224/24137 , H01L2224/73267 , H01S5/0217 , H01S5/02272 , H01S5/02276 , H01S5/042 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/1838 , H01S5/187 , H01S5/34313 , H01S2304/04 , Y10S438/977
摘要： A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

5. 发明申请

US20070153865A1 VERTICAL CAVITY SURFACE EMITTING LASER 有权
标题翻译：垂直孔表面发射激光
公开(公告)号：US20070153865A1
公开(公告)日：2007-07-05
申请号：US11612076
申请日：2006-12-18
申请人： Osamu Maeda , Masaki Shiozaki
发明人： Osamu Maeda , Masaki Shiozaki
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/18333 , H01S5/18338 , H01S2301/166
摘要： A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first multilayer reflector and a second multilayer reflector provided with the active layer in between, and resonate is generated in a given wavelength. The first current confinement layer has a current injection region is a region corresponding to the light emitting region, and is formed at a region including an antinode of a standing wave. The second current confinement layer has a current injection region with a diameter smaller than a diameter of the first current injection region and is formed at a region including a node standing wave.
摘要翻译：提供了可以容易地制造并且可以选择性地仅抑制高阶横模振荡的VCSEL。 VCSEL包括谐振器，第一电流限制层和第二电流限制层。谐振器包括具有发光区域的有源层和在其间设置有有源层的一对第一多层反射器和第二多层反射器，并且在给定波长中产生谐振。第一电流限制层具有电流注入区域是与发光区域相对应的区域，并且形成在包括驻波的波腹的区域中。第二电流限制层具有直径小于第一电流注入区的直径的电流注入区，并形成在包括节点驻波的区域。

6. 发明授权

US08488647B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08488647B2
公开(公告)日：2013-07-16
申请号：US12923634
申请日：2010-09-30
申请人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
发明人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
IPC分类号： H01S5/00
CPC分类号： H01S5/0264 , H01S5/18313 , H01S5/18325
摘要： The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.
摘要翻译：本发明提供一种通过简单的制造工艺实现增加的光检测精度的半导体发光器件。除了用于变窄的电流的第一氧化层之外，在有源层和半导体光检测元件之间提供一个或多个第二氧化层。由于天然发射光包含许多发散分量，所以天然发射光被第二氧化层反射和散射，并且抑制了将自然发射光传播到半导体光检测元件侧。半导体光检测元件的自然发光的检测水平降低，光检测精度提高。第一和第二氧化层通过单一氧化工艺形成，从而简化了制造工艺。

7. 发明申请

US20110164646A1 Laser diode array, method of manufacturing same, printer, and optical communication device 有权
标题翻译：激光二极管阵列，制造方法，打印机和光通信装置
公开(公告)号：US20110164646A1
公开(公告)日：2011-07-07
申请号：US13064218
申请日：2011-03-11
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/187 , H01S5/42
CPC分类号： H01S5/423 , H01L2224/18 , H01L2224/24137 , H01L2224/73267 , H01S5/0217 , H01S5/02272 , H01S5/02276 , H01S5/042 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/1838 , H01S5/187 , H01S5/34313 , H01S2304/04 , Y10S438/977
摘要： A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.
摘要翻译：提供一种制造能够抑制串扰的激光二极管阵列的方法。制造激光二极管阵列的方法包括以下步骤：通过晶体生长从第一衬底侧顺序地在第一衬底上形成含有可氧化材料和垂直谐振器结构的剥离层，然后选择性地蚀刻剥离层和垂直谐振器结构，从而处理成柱状，从侧面氧化剥离层的剥离步骤，然后从第一基板剥离柱状的垂直共振器结构，以及重新连接步骤，连接多个将通过剥离步骤获得的柱状垂直共振器结构施加到在表面上形成有金属层的第二基板的金属层的表面上。

8. 发明申请

US20110096806A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20110096806A1
公开(公告)日：2011-04-28
申请号：US12923634
申请日：2010-09-30
申请人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
发明人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
IPC分类号： H01S5/02
CPC分类号： H01S5/0264 , H01S5/18313 , H01S5/18325
摘要： The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.
摘要翻译：本发明提供一种通过简单的制造工艺实现增加的光检测精度的半导体发光器件。除了用于变窄的电流的第一氧化层之外，在有源层和半导体光检测元件之间提供一个或多个第二氧化层。由于天然发射光包含许多发散分量，所以天然发射光被第二氧化层反射和散射，并且抑制了将自然发射光传播到半导体光检测元件侧。半导体光检测元件的自然发光的检测水平降低，光检测精度提高。第一和第二氧化层通过单一氧化工艺形成，从而简化了制造工艺。

9. 发明授权

US07912105B2 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US07912105B2
公开(公告)日：2011-03-22
申请号：US11612076
申请日：2006-12-18
申请人： Osamu Maeda , Masaki Shiozaki
发明人： Osamu Maeda , Masaki Shiozaki
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , H01S5/18333 , H01S5/18338 , H01S2301/166
摘要： A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first multilayer reflector and a second multilayer reflector provided with the active layer in between, and resonate is generated in a given wavelength. The first current confinement layer has a current injection region is a region corresponding to the light emitting region, and is formed at a region including an antinode of a standing wave. The second current confinement layer has a current injection region with a diameter smaller than a diameter of the first current injection region and is formed at a region including a node standing wave.
摘要翻译：提供了可以容易地制造并且可以选择性地仅抑制高阶横模振荡的VCSEL。 VCSEL包括谐振器，第一电流限制层和第二电流限制层。谐振器包括具有发光区域的有源层和在其间设置有有源层的一对第一多层反射器和第二多层反射器，并且在给定波长中产生谐振。第一电流限制层具有电流注入区域是与发光区域相对应的区域，并且形成在包括驻波的波腹的区域中。第二电流限制层具有直径小于第一电流注入区的直径的电流注入区，并形成在包括节点驻波的区域。

10. 发明申请

US20090052490A1 Laser diode array, method of manufacturing same, printer, and optical communication device 有权
标题翻译：激光二极管阵列，制造方法，打印机和光通信装置
公开(公告)号：US20090052490A1
公开(公告)日：2009-02-26
申请号：US12219491
申请日：2008-07-23
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/125 , H01L21/02 , H01S5/026
CPC分类号： H01S5/423 , H01L2224/18 , H01L2224/24137 , H01L2224/73267 , H01S5/0217 , H01S5/02272 , H01S5/02276 , H01S5/042 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/1838 , H01S5/187 , H01S5/34313 , H01S2304/04 , Y10S438/977
摘要： A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.
摘要翻译：提供一种制造能够抑制串扰的激光二极管阵列的方法。制造激光二极管阵列的方法包括以下步骤：通过晶体生长从第一衬底侧顺序地在第一衬底上形成含有可氧化材料和垂直谐振器结构的剥离层，然后选择性地蚀刻剥离层和垂直谐振器结构，从而处理成柱状，从侧面氧化剥离层的剥离步骤，然后从第一基板剥离柱状的垂直共振器结构，以及重新连接步骤，连接多个将通过剥离步骤获得的柱状垂直共振器结构施加到在表面上形成有金属层的第二基板的金属层的表面上。

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