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    • 8. 发明授权
    • Method for a multiple exposure, microlithography projection exposure installation and a projection system
    • 多次曝光方法,微光刻投影曝光装置和投影系统
    • US08634060B2
    • 2014-01-21
    • US12725223
    • 2010-03-16
    • Ralf Scharnweber
    • Ralf Scharnweber
    • G03B27/42
    • G03F7/70208G03F7/70275G03F7/70991
    • In a method for multiply exposing at least one substrate coated with a photosensitive layer, a first exposure is carried out in accordance with a first set of exposure parameters on a first projection system (17), and a second exposure is carried out in accordance with a second set of exposure parameters on a second projection system (18) spatially separated from the first projection system (17). The projection systems are integrated in a common projection exposure installation (1). The first exposure can be carried out, for example, with an amplitude mask (6), the second exposure with a phase mask (9). The use of a number of projection systems enables multiple exposure that is performed in parallel and is therefore timesaving.
    • 在用感光层涂覆的至少一个基底进行多次曝光的方法中,根据第一投影系统(17)上的第一组曝光参数进行第一曝光,并且根据 在与第一投影系统(17)空间分离的第二投影系统(18)上的第二组曝光参数。 投影系统集成在通用投影曝光装置(1)中。 可以例如利用幅度掩模(6)进行第一曝光,用相位掩模(9)进行第二次曝光。 使用多个投影系统可以实现并行执行的多次曝光,因此节省时间。
    • 9. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS
    • EUV微观照相和相关系统和装置的照明光学
    • US20110063598A1
    • 2011-03-17
    • US12915785
    • 2010-10-29
    • Damian FiolkaBerndt WarmChristian SteigerwaldMartin EndresRalf StuetzleJens OssmannRalf ScharnweberMarkus HaufUdo DingerSeverin WaldisMarc KirchJoachim Hartjes
    • Damian FiolkaBerndt WarmChristian SteigerwaldMartin EndresRalf StuetzleJens OssmannRalf ScharnweberMarkus HaufUdo DingerSeverin WaldisMarc KirchJoachim Hartjes
    • G03B27/72
    • G03F7/70191G03F7/70083
    • An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet. The field facet mirror not only includes a plurality of basic illumination field facets which provide a basic illumination of the object field via associated basic illumination pupil facets, but also includes a plurality of correction illumination field facets which provide for a correction of the illumination of the object field via associated correction illumination pupil facets. The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
    • 用于EUV微光刻的照明光学器件将照射光束从辐射源引导到物场,其具有在较大场尺寸和较短场尺寸之间的延伸比,其中该比率远大于1.场分面镜具有多个 的场面在场景中设置定义的照明条件。 在场面反射镜下游的以下光学器件将照明光透射到物体场中。 以下光学器件包括具有多个光瞳面的光瞳小面镜。 场分面在每种情况下分别被分配给光瞳面,使得在各种情况下照射的照明光束的一部分通过相关联的光瞳小面被引导到物场。 场面镜不仅包括多个基本照明场面,它们通过相关联的基本照明光瞳面提供物场的基本照明,而且还包括多个校正照明场面,其提供对照射的照明的校正 通过相关联的校正照明光瞳面进行物体场。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。