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1. 发明授权

US09263852B2 Semiconductor laser and optical semiconductor device 有权
公开(公告)号：US09263852B2
公开(公告)日：2016-02-16
申请号：US14589412
申请日：2015-01-05
申请人： Oclaro Japan, Inc.
发明人： Kouji Nakahara , Yuki Wakayama
IPC分类号： H01S5/00 , H01S5/12 , H01S5/028 , H01S5/16 , H01S5/343 , H01S5/062
CPC分类号： H01S5/1215 , H01S5/0014 , H01S5/0287 , H01S5/06213 , H01S5/12 , H01S5/124 , H01S5/1246 , H01S5/164 , H01S5/34313
摘要： In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grating region is greater than the third diffraction grating region, and the second diffraction grating region is formed, in such a manner that phases of the first and third diffraction grating regions are shifted in a range of equal to or more than 0.6 π to equal to or less than 0.9 π, phases are successive on a boundary between the first and second diffraction grating regions and the phases are successive on a boundary between the second and third diffraction grating regions.

2. 发明授权

US08958451B2 Semiconductor laser and optical semiconductor device 有权
标题翻译：半导体激光器和光学半导体器件
公开(公告)号：US08958451B2
公开(公告)日：2015-02-17
申请号：US14167102
申请日：2014-01-29
申请人： Oclaro Japan, Inc.
发明人： Kouji Nakahara , Yuki Wakayama
IPC分类号： H01S5/00 , H01S5/12
CPC分类号： H01S5/1215 , H01S5/0014 , H01S5/0287 , H01S5/06213 , H01S5/12 , H01S5/124 , H01S5/1246 , H01S5/164 , H01S5/34313
摘要： In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grating region is greater than the third diffraction grating region, and the second diffraction grating region is formed, in such a manner that phases of the first and third diffraction grating regions are shifted in a range of equal to or more than 0.6 π to equal to or less than 0.9 π, phases are successive on a boundary between the first and second diffraction grating regions and the phases are successive on a boundary between the second and third diffraction grating regions.
摘要翻译：在包括具有第一间距的第一衍射光栅区域，具有第二间距的第二衍射光栅区域和具有第一间距的第三衍射光栅区域的衍射光栅的半导体激光器中，涂覆有端面的抗反射膜并且反射膜涂覆在相对端面上，第一衍射光栅区域大于第三衍射光栅区域，并且形成第二衍射光栅区域，使得第一衍射光栅区域的第一并且第三衍射光栅区域在等于或大于0.6＆amp; 等于或小于0.9＆pgr，相位在第一和第二衍射光栅区域之间的边界上连续，并且相位在第二和第三衍射光栅区域之间的边界上是连续的。

3. 发明授权

US08891570B2 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US08891570B2
公开(公告)日：2014-11-18
申请号：US13761755
申请日：2013-02-07
申请人： Oclaro Japan, Inc.
发明人： Kouji Nakahara , Yuki Wakayama , Takeshi Kitatani , Kazunori Shinoda
IPC分类号： H01S5/00 , H01S5/227 , H01S5/34 , H01S5/22 , H01S5/32 , H01S5/343 , H01S5/30 , H01S5/028 , H01S5/20 , H01S5/12
CPC分类号： H01S5/3403 , B82Y20/00 , H01S5/0021 , H01S5/0287 , H01S5/12 , H01S5/209 , H01S5/2201 , H01S5/2206 , H01S5/2213 , H01S5/2222 , H01S5/2224 , H01S5/2226 , H01S5/2275 , H01S5/3095 , H01S5/3201 , H01S5/3213 , H01S5/34306 , H01S2301/176
摘要： In a BH laser which uses InGaAlAs-MQW in an active layer, Al-based semiconductor multi-layer films including an InP buffer layer and an InGaAlAs-MQW layer, and an InGaAsP etching stop layer are formed in a mesa shape, and a p type InP burial layer is buried in side walls of the mesa shape. An air ridge mesa-stripe of a lateral center that is substantially the same as that of the mesa shape is formed on the mesa shape. According to the present structure, a leakage current can be considerably reduced, the light confinement coefficient can be made to be larger than in a BH laser in the related art, and thereby it is possible to implement a semiconductor laser with a low leakage current and a high relaxation oscillation frequency.
摘要翻译：在有源层中使用InGaAlAs-MQW的BH激光器中，以台面形状形成包括InP缓冲层和InGaAlAs-MQW层的Al系半导体多层膜和InGaAsP蚀刻停止层，ap型埋藏层埋在台面形状的侧壁上。在台面形状上形成与台面形状基本相同的横向中心的气脊台面条纹。根据本结构，相对于现有技术中的BH激光器，能够大幅度地减小泄漏电流，可以使光限制系数大于BH激光器，由此可以实现低泄漏电流的半导体激光器，高弛豫振荡频率。

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