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1. 发明授权

US10202710B2 Process for producing group III nitride crystal and apparatus for producing group III nitride crystal 有权
公开(公告)号：US10202710B2
公开(公告)日：2019-02-12
申请号：US15123565
申请日：2015-03-03
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC. , PANASONIC CORPORATION
发明人： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masashi Isemura , Yoshio Okayama
IPC分类号： C30B29/40 , C30B19/02 , C30B25/20 , C30B29/38 , C30B33/00 , H01L21/02 , B28D5/00 , C30B19/12 , C30B25/18 , C30B29/20 , H01L21/78 , H01L29/20 , H01L33/00 , H01L33/12 , H01L33/32 , H01S5/30
摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

2. 发明授权

US10026612B2 Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystal 有权
公开(公告)号：US10026612B2
公开(公告)日：2018-07-17
申请号：US15028341
申请日：2014-10-08
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC.
发明人： Yusuke Mori , Mamoru Imade , Masashi Yoshimura , Masashi Isemura
IPC分类号： C30B25/02 , H01L21/02 , C30B25/14 , C23C16/30 , C23C16/448 , C30B25/00 , C30B29/40 , C23C16/22 , H01L29/20 , H01L29/32
摘要： The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

3. 发明授权

US10266965B2 Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal 有权
公开(公告)号：US10266965B2
公开(公告)日：2019-04-23
申请号：US15123556
申请日：2015-02-26
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC.
发明人： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masashi Isemura , Akira Usui , Masatomo Shibata , Takehiro Yoshida
IPC分类号： C30B19/02 , C30B29/40 , C30B25/20 , C30B29/38 , H01L21/02 , B28D5/00 , C30B19/06 , C30B25/18 , C30B33/00 , H01L21/78 , H01L29/20 , H01L33/00 , H01L33/12 , H01L33/32 , H01S5/30
摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

4. 发明授权

US10011921B2 Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device 有权
公开(公告)号：US10011921B2
公开(公告)日：2018-07-03
申请号：US15523163
申请日：2015-10-28
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC. , National University Corporation Tokyo University of Agriculture and Technology
发明人： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masashi Isemura , Akinori Koukitu
IPC分类号： C30B29/40 , H01L21/00 , C30B9/02 , H01L29/20 , C30B25/02 , H01L21/02
CPC分类号： C30B29/406 , C23C16/34 , C30B9/02 , C30B25/02 , C30B25/14 , C30B25/20 , H01L21/0254 , H01L21/0262 , H01L21/205 , H01L29/2003 , H01L33/32
摘要： To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the −c-plane side. A crystal growth temperature is 1200° C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately −c direction.

5. 发明授权

US11377757B2 Method for producing group III nitride crystal and seed substrate 有权
公开(公告)号：US11377757B2
公开(公告)日：2022-07-05
申请号：US16792386
申请日：2020-02-17
申请人： PANASONIC CORPORATION , OSAKA UNIVERSITY
发明人： Yoshio Okayama , Shinsuke Komatsu , Masahiro Tada , Yusuke Mori , Masayuki Imanishi , Masashi Yoshimura
IPC分类号： C30B29/40 , C30B15/36 , C30B15/00 , C30B19/02 , C30B25/18
摘要： An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

6. 发明授权

US11795573B2 Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate 有权
公开(公告)号：US11795573B2
公开(公告)日：2023-10-24
申请号：US17359949
申请日：2021-06-28
申请人： OSAKA UNIVERSITY , Panasonic Corporation
发明人： Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Akira Kitamoto , Junichi Takino , Tomoaki Sumi , Yoshio Okayama
IPC分类号： C30B25/16 , C30B25/02 , H01L21/02 , C23C16/30 , C30B29/40
CPC分类号： C30B25/02 , C23C16/303 , C30B29/406 , H01L21/0254 , H01L21/0262
摘要： A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.

7. 发明授权

US11220759B2 Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step 有权
公开(公告)号：US11220759B2
公开(公告)日：2022-01-11
申请号：US16783229
申请日：2020-02-06
申请人： OSAKA UNIVERSITY , Panasonic Corporation
发明人： Yusuke Mori , Masayuki Imanishi , Masashi Yoshimura , Kousuke Murakami , Shinsuke Komatsu , Masahiro Tada , Yoshio Okayama
IPC分类号： C30B19/10 , C30B19/12 , C30B19/02 , C30B29/40
摘要： A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

8. 发明授权

US10927476B2 Production method for group III nitride crystal 有权
公开(公告)号：US10927476B2
公开(公告)日：2021-02-23
申请号：US16243321
申请日：2019-01-09
申请人： OSAKA UNIVERSITY , Panasonic Corporation
发明人： Yusuke Mori , Masayuki Imanishi , Masashi Yoshimura , Kousuke Murakami , Yoshio Okayama
IPC分类号： C30B9/02 , C30B19/02 , C30B19/10 , C30B29/40
摘要： A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

9. 发明授权

US10145022B2 Crystal growth apparatus and crystal production method 有权
公开(公告)号：US10145022B2
公开(公告)日：2018-12-04
申请号：US15622427
申请日：2017-06-14
申请人： OSAKA UNIVERSITY , Panasonic Corporation
发明人： Yusuke Mori , Mamoru Imade , Shinsuke Komatsu , Michirou Yoshino
IPC分类号： C30B9/12 , C30B35/00 , C30B29/40
摘要： A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw materials are mixed, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the one edge portion so that the raw materials drop through the opening to the growing part when the mixing of the raw materials is completed.

10. 发明授权

US11155931B2 Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5 有权
公开(公告)号：US11155931B2
公开(公告)日：2021-10-26
申请号：US16776647
申请日：2020-01-30
申请人： OSAKA UNIVERSITY , Panasonic Corporation
发明人： Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Akira Kitamoto , Junichi Takino , Tomoaki Sumi
IPC分类号： C30B25/16 , C30B29/40
摘要： A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

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