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1. 发明授权

US10011921B2 Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device 有权
公开(公告)号：US10011921B2
公开(公告)日：2018-07-03
申请号：US15523163
申请日：2015-10-28
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC. , National University Corporation Tokyo University of Agriculture and Technology
发明人： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masashi Isemura , Akinori Koukitu
IPC分类号： C30B29/40 , H01L21/00 , C30B9/02 , H01L29/20 , C30B25/02 , H01L21/02
CPC分类号： C30B29/406 , C23C16/34 , C30B9/02 , C30B25/02 , C30B25/14 , C30B25/20 , H01L21/0254 , H01L21/0262 , H01L21/205 , H01L29/2003 , H01L33/32
摘要： To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the −c-plane side. A crystal growth temperature is 1200° C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately −c direction.

2. 发明授权

US10026612B2 Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystal 有权
公开(公告)号：US10026612B2
公开(公告)日：2018-07-17
申请号：US15028341
申请日：2014-10-08
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC.
发明人： Yusuke Mori , Mamoru Imade , Masashi Yoshimura , Masashi Isemura
IPC分类号： C30B25/02 , H01L21/02 , C30B25/14 , C23C16/30 , C23C16/448 , C30B25/00 , C30B29/40 , C23C16/22 , H01L29/20 , H01L29/32
摘要： The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

3. 发明授权

US10266965B2 Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal 有权
公开(公告)号：US10266965B2
公开(公告)日：2019-04-23
申请号：US15123556
申请日：2015-02-26
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC.
发明人： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masashi Isemura , Akira Usui , Masatomo Shibata , Takehiro Yoshida
IPC分类号： C30B19/02 , C30B29/40 , C30B25/20 , C30B29/38 , H01L21/02 , B28D5/00 , C30B19/06 , C30B25/18 , C30B33/00 , H01L21/78 , H01L29/20 , H01L33/00 , H01L33/12 , H01L33/32 , H01S5/30
摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

4. 发明授权

US10202710B2 Process for producing group III nitride crystal and apparatus for producing group III nitride crystal 有权
公开(公告)号：US10202710B2
公开(公告)日：2019-02-12
申请号：US15123565
申请日：2015-03-03
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC. , PANASONIC CORPORATION
发明人： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masashi Isemura , Yoshio Okayama
IPC分类号： C30B29/40 , C30B19/02 , C30B25/20 , C30B29/38 , C30B33/00 , H01L21/02 , B28D5/00 , C30B19/12 , C30B25/18 , C30B29/20 , H01L21/78 , H01L29/20 , H01L33/00 , H01L33/12 , H01L33/32 , H01S5/30
摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

5. 发明授权

US11377757B2 Method for producing group III nitride crystal and seed substrate 有权
公开(公告)号：US11377757B2
公开(公告)日：2022-07-05
申请号：US16792386
申请日：2020-02-17
申请人： PANASONIC CORPORATION , OSAKA UNIVERSITY
发明人： Yoshio Okayama , Shinsuke Komatsu , Masahiro Tada , Yusuke Mori , Masayuki Imanishi , Masashi Yoshimura
IPC分类号： C30B29/40 , C30B15/36 , C30B15/00 , C30B19/02 , C30B25/18
摘要： An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

6. 发明授权

US10910511B2 Manufacturing method of III-V compound crystal and manufacturing method of semiconductor device 有权
公开(公告)号：US10910511B2
公开(公告)日：2021-02-02
申请号：US16135679
申请日：2018-09-19
申请人： DISCO CORPORATION , OSAKA UNIVERSITY
发明人： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masayuki Imanishi , Hiroshi Morikazu , Shin Tabata , Takumi Shotokuji
IPC分类号： H01L33/18 , H01L33/00 , C30B25/02 , C30B19/02 , C30B33/06 , C30B29/40 , H01L33/32 , H01L33/02
摘要： There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

7. 发明申请

US20140328742A1 METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL, AND SEMICONDUCTOR DEVICE 有权
标题翻译：生产III族氮化物晶体，III类氮化物晶体和半导体器件的方法
公开(公告)号：US20140328742A1
公开(公告)日：2014-11-06
申请号：US14371607
申请日：2013-01-10
申请人： OSAKA UNIVERSITY
发明人： Yusuke Mori , Mamoru Imade , Masashi Yoshimura , Mihoko Hirao , Masayuki Imanishi
IPC分类号： C30B19/02 , H01L21/02 , H01L29/20
CPC分类号： C30B19/02 , C30B19/12 , C30B29/403 , H01L21/0242 , H01L21/0254 , H01L21/02609 , H01L21/02625 , H01L21/02639 , H01L21/02645 , H01L21/02647 , H01L29/2003 , H01L33/007
摘要： The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (13), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer (11) as seed crystals for generation and growth of Group III nitride crystals (13); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (13), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals (13) grown from the plural seed crystals by the growth of the Group III nitride crystals (13) are bound.
摘要翻译：本发明提供一种能够生产III型氮化物晶体的方法，该III族氮化物晶体能够生产出具有很少缺陷和高质量的大尺寸的III族氮化物晶体。该方法是用于制造III族氮化物晶体的方法，包括：选择多个III族氮化物晶体层（11）的多个部分作为晶种产生和生长III族氮化物晶体的籽晶选择步骤（ 13）; 接触步骤，使晶种的表面与碱金属熔体接触; 在碱金属熔液中，在含氮气氛下使III族元素和氮彼此反应的晶体生长步骤，以生成和生长其中晶种为六方晶体的III族氮化物晶体（13）晶种选择工序中，配置晶种，使得从相互邻接的晶种生长的各晶体的m面基本上不一致，在晶体生长工序中，多组III 通过III族氮化物晶体（13）的生长，从多个晶种生长的氮化物晶体（13）被结合。

8. 发明申请

US20190088816A1 MANUFACTURING METHOD OF III-V COMPOUND CRYSTAL AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190088816A1
公开(公告)日：2019-03-21
申请号：US16135679
申请日：2018-09-19
申请人： DISCO CORPORATION , OSAKA UNIVERSITY
发明人： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masayuki Imanishi , Hiroshi Morikazu , Shin Tabata , Takumi Shotokuji
IPC分类号： H01L33/00 , C30B29/40 , H01L33/32 , H01L33/18
摘要： There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

9. 发明授权

US09834859B2 Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device 有权
公开(公告)号：US09834859B2
公开(公告)日：2017-12-05
申请号：US14371607
申请日：2013-01-10
申请人： OSAKA UNIVERSITY
发明人： Yusuke Mori , Mamoru Imade , Masashi Yoshimura , Mihoko Hirao , Masayuki Imanishi
IPC分类号： C30B19/02 , C30B19/12 , H01L21/02 , C30B29/40 , H01L29/20 , H01L33/00
CPC分类号： C30B19/02 , C30B19/12 , C30B29/403 , H01L21/0242 , H01L21/0254 , H01L21/02609 , H01L21/02625 , H01L21/02639 , H01L21/02645 , H01L21/02647 , H01L29/2003 , H01L33/007
摘要： The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (13), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer (11) as seed crystals for generation and growth of Group III nitride crystals (13); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (13), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals (13) grown from the plural seed crystals by the growth of the Group III nitride crystals (13) are bound.

10. 发明授权

US11155931B2 Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5 有权
公开(公告)号：US11155931B2
公开(公告)日：2021-10-26
申请号：US16776647
申请日：2020-01-30
申请人： OSAKA UNIVERSITY , Panasonic Corporation
发明人： Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Akira Kitamoto , Junichi Takino , Tomoaki Sumi
IPC分类号： C30B25/16 , C30B29/40
摘要： A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

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