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1. 发明授权

US09388506B2 Semiconductor crystal removal apparatus and production method for semiconductor crystal 有权
标题翻译：半导体晶体去除装置及半导体晶体的制造方法
公开(公告)号：US09388506B2
公开(公告)日：2016-07-12
申请号：US13918721
申请日：2013-06-14
申请人： TOYODA GOSEI CO., LTD.
发明人： Shiro Yamazaki , Seiji Nagai , Miki Moriyama
IPC分类号： C30B9/00 , C30B9/12 , C30B29/40 , C30B33/00 , C30B35/00 , C30B9/02 , C30B9/04
CPC分类号： C30B9/12 , C30B9/02 , C30B9/04 , C30B29/403 , C30B33/00 , C30B35/002 , Y10T117/1004 , Y10T117/1092
摘要： The present invention provides a semiconductor crystal removal apparatus which realizes effective removal of a semiconductor crystal from a crucible through rapid melting of a solidified flux, and a method for producing a semiconductor crystal. The semiconductor crystal removal apparatus includes a crucible support for supporting a crucible so that the opening of the crucible is directed downward; a heater for heating the crucible supported on the crucible support; and a semiconductor crystal receiving net for receiving a semiconductor crystal falling from the opening of the crucible. The semiconductor crystal removal apparatus further includes a determination portion for determining removal of the semiconductor crystal on the basis of a change in weight through falling of the semiconductor crystal.
摘要翻译：本发明提供一种半导体晶体去除装置，其通过固化的焊剂的快速熔化实现了从坩埚中有效去除半导体晶体，以及半导体晶体的制造方法。半导体晶体去除装置包括用于支撑坩埚的坩埚支撑件，使得坩埚的开口朝向下方; 用于加热支撑在坩埚支架上的坩埚的加热器; 以及用于接收从坩埚的开口落下的半导体晶体的半导体晶体接收网。半导体晶体去除装置还包括确定部分，用于基于半导体晶体的下降，基于重量变化来确定半导体晶体的去除。

2. 发明申请

US20170321348A1 METHOD FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, GROUP III ELEMENT NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND GROUP III ELEMENT NITRIDE CRYSTAL PRODUCTION DEVICE 有权
公开(公告)号：US20170321348A1
公开(公告)日：2017-11-09
申请号：US15523163
申请日：2015-10-28
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC. , National University Corp Tokyo University of Agriculture and Technology
发明人： Yusuke MORI , Masashi YOSHIMURA , Mamoru IMADE , Masashi ISEMURA , Akinori KOUKITU
IPC分类号： C30B29/40 , H01L21/02 , C30B9/02 , C30B25/02 , H01L29/20
CPC分类号： C30B29/406 , C23C16/34 , C30B9/02 , C30B25/02 , C30B25/14 , C30B25/20 , H01L21/0254 , H01L21/0262 , H01L21/205 , H01L29/2003 , H01L33/32
摘要： To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the −c-plane side. A crystal growth temperature is 1200° C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately −c direction.

3. 发明授权

US3546032A Method of manufacturing semiconductor devices on substrates consisting of single crystals 失效
标题翻译：在单晶衬底上制造半导体器件的方法
公开(公告)号：US3546032A
公开(公告)日：1970-12-08
申请号：US3546032D
申请日：1967-10-26
申请人： PHILIPS CORP
发明人： BASART JOHAN CHARLES MARIE , KNIPPENBERG WILHELMUS FRANCISC , VERSPUI GERRIT
IPC分类号： C30B9/00 , C30B9/02 , C30B19/02 , C30B19/04 , H01L21/00 , H01L7/00 , H01L7/38
CPC分类号： C30B19/02 , C30B9/00 , C30B9/02 , C30B19/04 , C30B29/36 , C30B29/44 , H01L21/00 , Y10S148/049 , Y10S148/071 , Y10S148/107 , Y10S148/119 , Y10S148/148 , Y10S148/166 , Y10S252/951
摘要： 1,194,017. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 27 Oct., 1967 [1 Nov., 1966], No. 48956/67. Heading H1K. Semi-conductor material is epitaxially deposited on a single crystal substrate from the liquid phase by withdrawing solvent from a molten solution of the semi-conductor material. The solvent may be withdrawn by evaporation or by chemical reaction. In a first example a 20% solution of SiC in chromium is placed on an N-type SiC wafer doped with nitrogen. The assembly is arranged on a pyrographite plate and heated by means of an H.F. coil in a helium atmosphere at reduced pressure to melt the solution from which the chromium evaporates to epitaxially deposit a layer of SiC which is of P-type conductivity due to a small chromium content. The solution may also contain aluminium as an acceptor impurity. In a second example a pattern of disc-shaped pieces of foil of Cr 20% SiC 20% Al are placed on a wafer of nitrogen-doped SiC and covered by a second wafer. On heating, areas of P-typ SiC are simultaneously epitaxially deposited on both wafers to form NPN structures. In a modification a pattern of chromium areas is vapour deposited on a wafer of SiC doped with boron and a second similar wafer is placed on the deposited pattern. The wafers are heated in helium containing 1 % nitrogen and SiC dissolves from the wafers and is regrown as N-type material where the chromium areas were deposited to form PNP structures. In a third example a plate of Ga, 4 mol. per cent GaP, 0À04% Te is placed on a zinc-doped P-type wafer of GaP and heated in an atmosphere of chlorine which reacts with the molten gallium to form volatile gallium chloride, N- type GaP doped with tellurium being epitaxially deposited on the wafer.

4. 发明申请

US20140000509A1 SEMICONDUCTOR CRYSTAL REMOVAL APPARATUS AND PRODUCTION METHOD FOR SEMICONDUCTOR CRYSTAL 有权
标题翻译：半导体晶体的半导体晶体去除装置和生产方法
公开(公告)号：US20140000509A1
公开(公告)日：2014-01-02
申请号：US13918721
申请日：2013-06-14
申请人： TOYODA GOSEI CO., LTD.
发明人： Shiro YAMAZAKI , Seiji NAGAI , Miki MORIYAMA
IPC分类号： C30B9/12
CPC分类号： C30B9/12 , C30B9/02 , C30B9/04 , C30B29/403 , C30B33/00 , C30B35/002 , Y10T117/1004 , Y10T117/1092
摘要： The present invention provides a semiconductor crystal removal apparatus which realizes effective removal of a semiconductor crystal from a crucible through rapid melting of a solidified flux, and a method for producing a semiconductor crystal. The semiconductor crystal removal apparatus includes a crucible support for supporting a crucible so that the opening of the crucible is directed downward; a heater for heating the crucible supported on the crucible support; and a semiconductor crystal receiving net for receiving a semiconductor crystal falling from the opening of the crucible. The semiconductor crystal removal apparatus further includes a determination portion for determining removal of the semiconductor crystal on the basis of a change in weight through falling of the semiconductor crystal.
摘要翻译：本发明提供一种半导体晶体去除装置，其通过固化的焊剂的快速熔化实现了从坩埚中有效去除半导体晶体，以及半导体晶体的制造方法。半导体晶体去除装置包括用于支撑坩埚的坩埚支撑件，使得坩埚的开口朝向下方; 用于加热支撑在坩埚支架上的坩埚的加热器; 以及用于接收从坩埚的开口落下的半导体晶体的半导体晶体接收网。半导体晶体去除装置还包括确定部分，用于基于半导体晶体的下降，基于重量变化来确定半导体晶体的去除。

5. 发明申请

US20110277680A1 ARTIFICIAL CORUNDUM CRYSTAL 审中-公开
标题翻译：人造琴水晶
公开(公告)号：US20110277680A1
公开(公告)日：2011-11-17
申请号：US13190792
申请日：2011-07-26
申请人： Katsuya TESHIMA , Shuji OISHI
发明人： Katsuya TESHIMA , Shuji OISHI
IPC分类号： C30B9/02
CPC分类号： C30B29/20 , C30B9/02
摘要： An artificial corundum crystal which can be put into practical use at low costs, and a process for producing the same. The artificial corundum crystal has at least one crystal face selected from {113}, {012}, {014}, {113}, {110}, {101}, {116}, {211}, {122}, {214}, {100}, {125}, {223}, {131}, and {312} faces. The process for producing the artificial corundum crystal is by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal and grow the crystal by use of flux evaporation as a driving force.
摘要翻译：可以以低成本投入实际使用的人造刚玉晶体及其制造方法。人造刚玉晶体具有从{113}，{012}，{014}，{113}，{110}，{101}，{116}，{211}，{122}，{214 }，{100}，{125}，{223}，{131}和{312}个面孔。用于制造人造刚玉晶体的方法是通过加热含有原料和助熔剂的样品的助熔剂蒸发法，使析出晶体并通过使用助熔剂蒸发来生长晶体作为驱动力。

6. 发明申请

US20080227617A1 Artificial Corundum Crystal 失效
标题翻译：人造刚玉水晶
公开(公告)号：US20080227617A1
公开(公告)日：2008-09-18
申请号：US10589635
申请日：2005-02-17
申请人： Katsuya Teshima , Shuji Oishi
发明人： Katsuya Teshima , Shuji Oishi
IPC分类号： C30B29/20
CPC分类号： C30B29/20 , C30B9/02
摘要： An artificial corundum crystal which can be put into practical use at low costs, and a process for producing the same. The artificial corundum crystal contains a seed crystal and has at least one crystal face selected from a {113} face, a {012} face, a {104} face, a {110} face, a {101} face, a {116} face, a {211} face, a {122} face, a {214} face, a {100} face, a {125} face, a {223} face, a {131} face, and a {312} face. The process for producing the artificial corundum crystal an artificial corundum crystal having a hexagonally dipyramidal includes forming with a seed crystal by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal and grow the crystal by use of flux evaporation as a driving force.
摘要翻译：可以以低成本投入实际使用的人造刚玉晶体及其制造方法。人造刚玉晶体含有晶种，并具有至少一个选自{113}面，{012}面，{104}面，{110}面，{101}面，{116 面对，{211}面，{122}面，{214}面，{100}面，{125}面，{223}面，{131}面和{312} 面对。生产人造刚玉晶体的方法是具有六角形双锥体的人造刚玉晶体，包括通过加热含有原料和助熔剂的样品的助熔剂蒸发法形成晶种，以沉淀晶体并通过使用助熔剂生长晶体蒸发作为动力。

7. 发明授权

US4001076A Method for growing thin epitaxial layers of a non-linear, optically active material 失效
标题翻译：用于生长非线性，光学活性材料的薄膜外延层的方法
公开(公告)号：US4001076A
公开(公告)日：1977-01-04
申请号：US531570
申请日：1974-12-11
申请人： Lawrence B. Robinson , William Powazinik
发明人： Lawrence B. Robinson , William Powazinik
IPC分类号： C30B9/02 , C30B19/02 , C30B19/06 , B01J17/20 , C01D11/02 , C01G35/00 , C01G57/00
CPC分类号： C30B19/062 , C30B19/02 , C30B29/22 , C30B9/02 , Y10S117/912
摘要： Thin film epitaxial layers of mixed oxide compounds, or of solid solutions of two mixed oxides, are deposited on a suitable single crystal substrate. Growth is achieved by introducing the substrate into a crucible containing a saturated solution of the oxide(s) in a molten alkali metal halide having additional undissolved oxide(s) present in the crucible. Evaporation of the alkali metal halide solvent produces and/or maintains the supersaturated condition, which is relieved by epitaxial deposition of the oxide(s) onto the substrate. When two mixed oxides are dissolved in the solvent, the composition of the film is determined and fixed by the temperature of growth. To produce a thin film of a constant composition, growth is conducted isothermally. To produce a thin film with a graded composition throughout its thickness, growth is conducted by slowly cooling the temperature of the solution. Excess, undissolved oxide is kept in a region of the crucible such that the undissolved oxide is several degrees hotter than the liquid in contact with the substrate. This condition results in additional oxide dissolving in the solvent as elsewhere the oxide is being deposited onto the substrate. This method of epitaxial growth provides good control of both the film composition and the film thickness.

8. 发明授权

US10011921B2 Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device 有权
公开(公告)号：US10011921B2
公开(公告)日：2018-07-03
申请号：US15523163
申请日：2015-10-28
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC. , National University Corporation Tokyo University of Agriculture and Technology
发明人： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masashi Isemura , Akinori Koukitu
IPC分类号： C30B29/40 , H01L21/00 , C30B9/02 , H01L29/20 , C30B25/02 , H01L21/02
CPC分类号： C30B29/406 , C23C16/34 , C30B9/02 , C30B25/02 , C30B25/14 , C30B25/20 , H01L21/0254 , H01L21/0262 , H01L21/205 , H01L29/2003 , H01L33/32
摘要： To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the −c-plane side. A crystal growth temperature is 1200° C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately −c direction.

9. 发明授权

US07674334B2 Artificial corundum crystal 失效
标题翻译：人造刚玉水晶
公开(公告)号：US07674334B2
公开(公告)日：2010-03-09
申请号：US10589635
申请日：2005-02-17
申请人： Katsuya Teshima , Shuji Oishi
发明人： Katsuya Teshima , Shuji Oishi
IPC分类号： C30B29/20
CPC分类号： C30B29/20 , C30B9/02
摘要： An artificial corundum crystal which can be put into practical use at low costs, and a process for producing the same. The artificial corundum crystal contains a seed crystal and has at least one crystal face selected from a {113} face, a {012} face, a {104} face, a {110} face, a {101} face, a {116} face, a {211} face, a {122} face, a {214} face, a {100} face, a {125} face, a {223} face, a {131} face, and a {312} face. The process for producing the artificial corundum crystal an artificial corundum crystal having a hexagonally dipyramidal includes forming with a seed crystal by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal and grow the crystal by use of flux evaporation as a driving force.
摘要翻译：可以以低成本投入实际使用的人造刚玉晶体及其制造方法。人造刚玉晶体含有晶种，并具有至少一个选自{113}面，{012}面，{104}面，{110}面，{101}面，{116 面对，{211}面，{122}面，{214}面，{100}面，{125}面，{223}面，{131}面和{312} 面对。生产人造刚玉晶体的方法是具有六角形双锥体的人造刚玉晶体，包括通过加热含有原料和助熔剂的样品的助熔剂蒸发法形成晶种，以沉淀晶体并通过使用助熔剂生长晶体蒸发作为动力。

10. 发明授权

US07585365B2 Corundum crystal formed body 失效
标题翻译：刚玉晶体形成
公开(公告)号：US07585365B2
公开(公告)日：2009-09-08
申请号：US10589546
申请日：2005-02-17
申请人： Katsuya Teshima
发明人： Katsuya Teshima
IPC分类号： C30B29/16
CPC分类号： C30B9/02 , C30B29/20
摘要： A corundum crystal formed body having a corundum crystal grown directly on a base material and a production process capable of producing the corundum crystal formed body easily at low costs. The a corundum crystal formed body has a platinum base material and a corundum crystal portion formed on the platinum base material. Further, the process for producing a corundum crystal formed body involves forming a corundum crystal on a platinum base material by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal. The crystal is grown by use of flux evaporation as a driving force.
摘要翻译：具有直接在基材上生长的刚玉晶体的刚玉晶体形成体和能够以低成本容易地制造刚玉晶体形成体的制造方法。刚玉晶体形成体具有在铂基材上形成的铂基材料和刚玉晶体部。此外，刚玉晶体形成体的制造方法包括通过加热含有原料和助熔剂的试样的助熔剂蒸发法在铂基材上形成刚玉晶体，使晶体析出。通过使用助熔剂蒸发来生长晶体作为驱动力。

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