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    • 5. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING THEREOF
    • 半导体器件及其控制方法
    • US20080320208A1
    • 2008-12-25
    • US12139274
    • 2008-06-13
    • Hirokazu NagashimaKazuki YamauchiJunya KawamataTsutomu NakaiKenji AraiKenichi Takehana
    • Hirokazu NagashimaKazuki YamauchiJunya KawamataTsutomu NakaiKenji AraiKenichi Takehana
    • G06F12/02G06F12/00
    • G06F12/0246G06F12/0638G11C16/20
    • A semiconductor device includes a first nonvolatile storage area including a plurality of sectors, a second nonvolatile storage area, a third nonvolatile storage area located in the first nonvolatile storage area, a fourth nonvolatile storage area located in the second nonvolatile storage area, and a control portion selecting one of a first mode and a second mode. In first mode, sectors where the third nonvolatile storage area is not located in the first nonvolatile storage area are used as a main storage area, and the second nonvolatile storage area is used to store a program or data that is read before the first nonvolatile storage area is accessed, the third nonvolatile storage area being used to store control information that controls writing, reading, and erasing of data involved in the first nonvolatile storage area or the second nonvolatile storage area. In the second mode, the first nonvolatile storage area is used as the main storage area, and the fourth nonvolatile storage area is used to store the control information.
    • 半导体器件包括:第一非易失性存储区域,包括多个扇区;第二非易失性存储区域;位于第一非易失性存储区域中的第三非易失性存储区域;位于第二非易失性存储区域中的第四非易失性存储区域;以及控制 选择第一模式和第二模式之一的部分。 在第一模式中,将第三非易失性存储区域不位于第一非易失性存储区域中的扇区用作主存储区域,并且第二非易失性存储区域用于存储在第一非易失性存储器之前读取的程序或数据 访问第三非易失性存储区域,用于存储控制第一非易失性存储区域或第二非易失性存储区域中涉及的数据的写入,读取和擦除的控制信息。 在第二模式中,将第一非易失性存储区域用作主存储区域,并且第四非易失性存储区域用于存储控制信息。
    • 6. 发明授权
    • Load driving apparatus
    • 负载驱动装置
    • US08766671B2
    • 2014-07-01
    • US13296429
    • 2011-11-15
    • Yasutaka SendaRyotaro MiuraKazuki Yamauchi
    • Yasutaka SendaRyotaro MiuraKazuki Yamauchi
    • H03K3/00
    • H03K17/0406G05F1/561H03K17/163H03K17/168H03K2217/0036
    • A load driving apparatus for driving a load with a constant current includes a shunt resistor and a driver circuit. A shunt current corresponding to the constant current flows though the shunt resistor. The driver circuit is connected to a first end of the shunt resistor to supply the constant current corresponding to the shunt current to the load. The driver circuit includes a reference voltage source for generating a predetermined reference voltage. The driver circuit adjusts the magnitude of the constant current by performing a feedback-control of the magnitude of the shunt current in such a manner that a first voltage corresponding to the reference voltage and a second voltage corresponding to a voltage at the first end of the shunt resistor become equal to each other.
    • 用于以恒定电流驱动负载的负载驱动装置包括分流电阻器和驱动器电路。 对应于恒流的分流电流流过分流电阻。 驱动电路连接到分流电阻的第一端,以将与分流电流相对应的恒定电流提供给负载。 驱动器电路包括用于产生预定参考电压的参考电压源。 驱动器电路通过对分流电流的大小进行反馈控制来调整恒定电流的大小,使得对应于参考电压的第一电压和对应于参考电压的第一端的电压的第二电压 分流电阻互相相等。
    • 10. 发明授权
    • Semiconductor device and method for controlling thereof
    • 半导体装置及其控制方法
    • US08423705B2
    • 2013-04-16
    • US12139274
    • 2008-06-13
    • Hirokazu NagashimaKazuki YamauchiJunya KawamataTsutomu NakaiKenji AraiKenichi Takehana
    • Hirokazu NagashimaKazuki YamauchiJunya KawamataTsutomu NakaiKenji AraiKenichi Takehana
    • G06F12/02
    • G06F12/0246G06F12/0638G11C16/20
    • A semiconductor device includes a first nonvolatile storage area including a plurality of sectors, a second nonvolatile storage area, a third nonvolatile storage area located in the first nonvolatile storage area, a fourth nonvolatile storage area located in the second nonvolatile storage area, and a control portion selecting one of a first mode and a second mode. In first mode, sectors where the third nonvolatile storage area is not located in the first nonvolatile storage area are used as a main storage area, and the second nonvolatile storage area is used to store a program or data that is read before the first nonvolatile storage area is accessed, the third nonvolatile storage area being used to store control information that controls writing, reading, and erasing of data involved in the first nonvolatile storage area or the second nonvolatile storage area. In the second mode, the first nonvolatile storage area is used as the main storage area, and the fourth nonvolatile storage area is used to store the control information.
    • 半导体器件包括:第一非易失性存储区域,包括多个扇区;第二非易失性存储区域;位于第一非易失性存储区域中的第三非易失性存储区域;位于第二非易失性存储区域中的第四非易失性存储区域;以及控制 选择第一模式和第二模式之一的部分。 在第一模式中,将第三非易失性存储区域不位于第一非易失性存储区域中的扇区用作主存储区域,并且第二非易失性存储区域用于存储在第一非易失性存储器之前读取的程序或数据 访问第三非易失性存储区域,用于存储控制第一非易失性存储区域或第二非易失性存储区域中涉及的数据的写入,读取和擦除的控制信息。 在第二模式中,将第一非易失性存储区域用作主存储区域,并且第四非易失性存储区域用于存储控制信息。