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    • 8. 发明授权
    • Film forming apparatus
    • 成膜装置
    • US07691203B2
    • 2010-04-06
    • US11341093
    • 2006-01-27
    • Toru InagakiTakahiro ShirahataTakashi YokoyamaMichihiro SanoNaochika Horio
    • Toru InagakiTakahiro ShirahataTakashi YokoyamaMichihiro SanoNaochika Horio
    • C23C16/22H01L21/36C23C16/00
    • C23C16/45514C23C16/4411C23C16/4412C23C16/45563C23C16/4584C30B25/14C30B29/16
    • A film forming apparatus is provided that can prevent source gases from reacting together before reaching the substrate being processed in the apparatus, minimize the influence of the radiation heat from the substrate, and make the gas behavior in the reaction chamber better for crystal film formation. The apparatus forms a film on a surface of a heated substrate 5 by causing a first source gas and a second source gas to react together. The apparatus has a processing chamber 1, in which the substrate 5 is placed. The processing chamber 1 is divided into a heating chamber 1a and a reaction chamber 1b by at least the substrate 5 so that the substrate surface can be exposed to the source gases in the reaction chamber 1b. The apparatus further has an exhaust duct 7, through which the exhaust gas can be discharged. The exhaust duct 7 faces the exposed substrate surface and connects with the reaction chamber 1b. The apparatus further has first supply ports 11 and second supply ports 12, through which the first and second source gases respectively can be supplied independently onto the substrate surface. The supply ports 11 and 12 are positioned outside the exhaust duct 7. This enables the source gases to react immediately near the substrate 5 so that high-quality crystal film formation can be performed on the substrate.
    • 提供了一种成膜装置,其可以在到达装置内被处理的基板之前防止源气体一起反应,从而最小化来自基板的辐射热的影响,并使反应室中的气体行为更好地用于晶体膜形成。 该装置通过使第一源气体和第二源气体一起反应而在加热的基板5的表面上形成膜。 该装置具有处理室1,其中放置有基板5。 处理室1至少由基板5分成加热室1a和反应室1b,使得基板表面能够暴露于反应室1b中的源气体。 该装置还具有排气管7,排气可以排出。 排气管7面对暴露的基板表面并与反应室1b连接。 该装置还具有第一供应端口11和第二供应端口12,第一和第二源气体可以分别通过第一供应端口11和第二供应端口12独立地供应到基板表面上。 供给口11和12位于排气管7的外部。这使得源气体能够在基板5附近立即反应,从而可以在基板上进行高质量的晶体成膜。
    • 10. 发明授权
    • Sequence control circuit
    • 顺序控制电路
    • US06421773B1
    • 2002-07-16
    • US08976148
    • 1997-11-21
    • Toru Inagaki
    • Toru Inagaki
    • G06F738
    • G05B19/042G05B2219/23428G06F11/27
    • A sequence control circuit provided in such as a test pattern generator of a memory test apparatus, and made capable of designating a plurality of branches according to a plurality of branch conditions in describing a test pattern program. This sequence control circuit comprises a plurality of branch address registers for storing different branch addresses, respectively, and a logic operation circuit receiving a plurality of flags for detecting combinations of flag values. A program counter controller selects a certain branch address according to a combination of flag values detected in the logic operation circuit and arranges to load the branch address stored in the selected branch address register to a program counter.
    • 一种序列控制电路,其设置在存储器测试装置的测试图形发生器中,并且能够在描述测试图案程序时根据多个分支条件指定多个分支。 该序列控制电路分别包括用于存储不同分支地址的多个分支地址寄存器,以及接收用于检测标志值的组合的多个标志的逻辑运算电路。 程序计数器控制器根据在逻辑运算电路中检测到的标志值的组合来选择某个分支地址,并且将存储在所选择的分支地址寄存器中的分支地址加载到程序计数器。