会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • Film forming apparatus
    • 成膜装置
    • US07691203B2
    • 2010-04-06
    • US11341093
    • 2006-01-27
    • Toru InagakiTakahiro ShirahataTakashi YokoyamaMichihiro SanoNaochika Horio
    • Toru InagakiTakahiro ShirahataTakashi YokoyamaMichihiro SanoNaochika Horio
    • C23C16/22H01L21/36C23C16/00
    • C23C16/45514C23C16/4411C23C16/4412C23C16/45563C23C16/4584C30B25/14C30B29/16
    • A film forming apparatus is provided that can prevent source gases from reacting together before reaching the substrate being processed in the apparatus, minimize the influence of the radiation heat from the substrate, and make the gas behavior in the reaction chamber better for crystal film formation. The apparatus forms a film on a surface of a heated substrate 5 by causing a first source gas and a second source gas to react together. The apparatus has a processing chamber 1, in which the substrate 5 is placed. The processing chamber 1 is divided into a heating chamber 1a and a reaction chamber 1b by at least the substrate 5 so that the substrate surface can be exposed to the source gases in the reaction chamber 1b. The apparatus further has an exhaust duct 7, through which the exhaust gas can be discharged. The exhaust duct 7 faces the exposed substrate surface and connects with the reaction chamber 1b. The apparatus further has first supply ports 11 and second supply ports 12, through which the first and second source gases respectively can be supplied independently onto the substrate surface. The supply ports 11 and 12 are positioned outside the exhaust duct 7. This enables the source gases to react immediately near the substrate 5 so that high-quality crystal film formation can be performed on the substrate.
    • 提供了一种成膜装置,其可以在到达装置内被处理的基板之前防止源气体一起反应,从而最小化来自基板的辐射热的影响,并使反应室中的气体行为更好地用于晶体膜形成。 该装置通过使第一源气体和第二源气体一起反应而在加热的基板5的表面上形成膜。 该装置具有处理室1,其中放置有基板5。 处理室1至少由基板5分成加热室1a和反应室1b,使得基板表面能够暴露于反应室1b中的源气体。 该装置还具有排气管7,排气可以排出。 排气管7面对暴露的基板表面并与反应室1b连接。 该装置还具有第一供应端口11和第二供应端口12,第一和第二源气体可以分别通过第一供应端口11和第二供应端口12独立地供应到基板表面上。 供给口11和12位于排气管7的外部。这使得源气体能够在基板5附近立即反应,从而可以在基板上进行高质量的晶体成膜。
    • 8. 发明授权
    • Sequence control circuit
    • 顺序控制电路
    • US06421773B1
    • 2002-07-16
    • US08976148
    • 1997-11-21
    • Toru Inagaki
    • Toru Inagaki
    • G06F738
    • G05B19/042G05B2219/23428G06F11/27
    • A sequence control circuit provided in such as a test pattern generator of a memory test apparatus, and made capable of designating a plurality of branches according to a plurality of branch conditions in describing a test pattern program. This sequence control circuit comprises a plurality of branch address registers for storing different branch addresses, respectively, and a logic operation circuit receiving a plurality of flags for detecting combinations of flag values. A program counter controller selects a certain branch address according to a combination of flag values detected in the logic operation circuit and arranges to load the branch address stored in the selected branch address register to a program counter.
    • 一种序列控制电路,其设置在存储器测试装置的测试图形发生器中,并且能够在描述测试图案程序时根据多个分支条件指定多个分支。 该序列控制电路分别包括用于存储不同分支地址的多个分支地址寄存器,以及接收用于检测标志值的组合的多个标志的逻辑运算电路。 程序计数器控制器根据在逻辑运算电路中检测到的标志值的组合来选择某个分支地址,并且将存储在所选择的分支地址寄存器中的分支地址加载到程序计数器。
    • 9. 发明授权
    • Address pattern generator for burst address access of an SDRAM
    • 用于SDRAM的突发地址访问的地址模式生成器
    • US5940875A
    • 1999-08-17
    • US016710
    • 1998-01-30
    • Toru InagakiKenichi Fujisaki
    • Toru InagakiKenichi Fujisaki
    • G01R31/3183G01R31/3181G01R31/319G06F9/34G06F12/00G06F12/02G11C29/04G11C29/10G11C29/18G11C29/20G01K31/28
    • G06F9/34G01R31/31813G11C29/18G11C29/20G01R31/31921
    • An address pattern generator for testing a semiconductor device, particularly, a synchronous DRAM (SDRAM) is disclosed. The address pattern generator can switch an interleave mode and a sequential mode of address generation for a SDRAM during a test process in real time and generates column addresses for the SDRAM by a Y address generation section alone. The address generator includes an address selector that selects and outputs from a lower Y address signal, a Z address signal, and an operation mode control signal, a conversion memory that outputs data based on a conversion table, a multiplexer that selects and outputs an output from the conversion memory and the lower Y address signal in accordance with a burst length control signal. In another aspect, the address pattern generator includes a counter that loads the lower address signal from the Y address generator section for the sequential mode while a fixed value for the interleave mode, an exclusive OR gate that receives an output signal of the counter to an input terminal and the lower address signal from the Y address generation section to the other input terminal, and a multiplexer that selects the output signal of the counter for the sequential mode and the output signal of the exclusive OR gate for the interleave mode.
    • 公开了一种用于测试半导体器件,特别是同步DRAM(SDRAM)的地址模式发生器。 地址模式发生器可以在测试过程中实时地切换SDRAM的交错模式和顺序地址生成模式,并且由Y地址生成部分单独生成用于SDRAM的列地址。 地址生成器包括:地址选择器,其从较低的Y地址信号,Z地址信号和操作模式控制信号中选择和输出,转换存储器,其基于转换表输出数据;多路复用器,其选择和输出输出 根据突发长度控制信号从转换存储器和较低的Y地址信号。 在另一方面,地址模式发生器包括一个计数器,用于为顺序模式加载来自Y地址生成器部分的较低地址信号,而交织模式的固定值,接收该计数器的输出信号的异或门 输入端子和从Y地址产生部分到另一个输入端子的较低地址信号,以及多路复用器,用于选择用于顺序模式的计数器的输出信号和用于交错模式的异或门的输出信号。
    • 10. 发明授权
    • Brazing system
    • 钎焊系统
    • US08418743B2
    • 2013-04-16
    • US13356023
    • 2012-01-23
    • Michiyasu KuriharaKiyoshi FurukawaToru InagakiZhenyu Yan
    • Michiyasu KuriharaKiyoshi FurukawaToru InagakiZhenyu Yan
    • B23K1/00B23K20/14
    • B23K1/0012B23K1/012B23K3/04F28D2021/008F28F21/084F28F2275/045
    • A brazing system for brazing component members of a workpiece has a brazing chamber an inside of which is made a heating space of a volume corresponding to the workpiece, a radiant heating means provided with a plurality of heating sources which are positioned so as to correspond to a plurality of regions into which two facing surfaces of the workpiece are respectively divided, a convection heating means for circulating a heated inert gas to the heating space so as to heat the workpiece, and a control means for controlling the operation of the heating sources and the circulation of the inert gas. Each heating source is independently controlled by the control means, and the convection heating means circulates the inert gas so as to reduce a temperature difference of the workpiece caused by the heating sources.
    • 用于钎焊工件的组件的钎焊系统具有钎焊室,其内部被制成与工件相对应的体积的加热空间,辐射加热装置设置有多个加热源,其被定位成对应于 将工件的两个相对表面分别分开的多个区域,用于将加热的惰性气体循环到加热空间以加热工件的对流加热装置,以及用于控制加热源的操作的控制装置, 惰性气体的循环。 每个加热源由控制装置独立地控制,对流加热装置使惰性气体循环,以减少加热源产生的工件的温度差。