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1. 发明授权

US5250339A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5250339A
公开(公告)日：1993-10-05
申请号：US940753
申请日：1992-09-08
申请人： Noriaki Tani , Kyuzo Nakamura , Michio Ishikawa , Masanori Hashimoto , Yoshifumi Ota
发明人： Noriaki Tani , Kyuzo Nakamura , Michio Ishikawa , Masanori Hashimoto , Yoshifumi Ota
IPC分类号： G11B5/66 , G11B5/72 , G11B5/73 , B32B3/02
CPC分类号： G11B5/7325 , G11B5/66 , G11B5/72 , Y10S428/90 , Y10T428/12826 , Y10T428/265
摘要： A magnetic recording medium suitable for high-density recording which comprises a non-magnetic substrate disk, at least one magnetic layer and at least one protective layer, the magnetic layer and the protective layer being formed in succession on the non-magnetic substrate disk, wherein the non-magnetic substrate disk comprises a glass substrate and at least one non-magnetic metallic film provided on the glass substrate, and the non-magnetic metallic film is provided on a surface thereof with a multitude of fine concentric grooves.
摘要翻译：一种适用于高密度记录的磁记录介质，包括非磁性基板盘，至少一个磁性层和至少一个保护层，所述磁性层和保护层依次形成在非磁性基板盘上，其中所述非磁性基板盘包括玻璃基板和设置在所述玻璃基板上的至少一个非磁性金属膜，并且所述非磁性金属膜在其表面上设置有多个细小的同心凹槽。

2. 发明授权

US5147734A Magnetic recording media manufactured by a process in which a negative bias voltage is applied to the substrate during sputtering 失效
标题翻译：通过在溅射期间将负极偏压应用于基板的工艺制造的磁记录介质
公开(公告)号：US5147734A
公开(公告)日：1992-09-15
申请号：US323452
申请日：1989-03-14
申请人： Kyuzo Nakamura , Yoshifumi Ota , Michio Ishikawa , Noriaki Tani , Masanori Hashimoto
发明人： Kyuzo Nakamura , Yoshifumi Ota , Michio Ishikawa , Noriaki Tani , Masanori Hashimoto
IPC分类号： G11B5/706 , G11B5/64 , G11B5/66 , G11B5/73 , G11B5/738 , G11B5/84 , G11B5/85 , G11B5/851
CPC分类号： G11B5/7325 , G11B5/66 , G11B5/84 , Y10T428/12861
摘要： A magnetic recording member with improved coercive force is obtained by:(a) forming by sputtering or Cr film on a non-magnetic substrate;(b) forming by sputtering an epitaxially grown film of a Co alloy containing at least Cr as an additional metal on the Cr film formed in the step (a);and applying a negative bias voltage to the substrate during at least one of steps (a) and (b).The coercive force of the magnetic recording member is further increased when high-frequency sputtering is used instead of direct current sputtering.

3. 发明授权

US5288329A Chemical vapor deposition apparatus of in-line type 失效
标题翻译：串联式化学气相沉积装置
公开(公告)号：US5288329A
公开(公告)日：1994-02-22
申请号：US616106
申请日：1990-11-20
申请人： Kyuzo Nakamura , Michio Ishikawa , Kazuyuki Ito , Noriaki Tani , Masanori Hashimoto , Yoshifumi Ota
发明人： Kyuzo Nakamura , Michio Ishikawa , Kazuyuki Ito , Noriaki Tani , Masanori Hashimoto , Yoshifumi Ota
IPC分类号： C23C16/44 , C23C16/02 , C23C16/50 , C23C16/54 , C23F4/00 , H01L21/205 , H01L21/31 , H01L21/00
CPC分类号： C23C16/54 , C23C16/0245
摘要： An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.
摘要翻译：一种在线型化学气相沉积装置，具有用于清洁至少基板保持件的蚀刻装置，该蚀刻装置设置在基板卸载站的下游，其中处理的基板在大气压力下从基板保持器移除。蚀刻装置包括等离子体蚀刻装置，其中衬底保持器位于阳极侧或干蚀刻装置，其中衬底保持器位于阴极侧，从而减少装置的停机时间而不受任何影响附着膜从基板保持器或其他部分剥离。

4. 发明授权

US5069983A Magnetic recording member 失效
标题翻译：磁记录部件
公开(公告)号：US5069983A
公开(公告)日：1991-12-03
申请号：US414235
申请日：1989-09-29
申请人： Kyuzo Nakamura , Yoshifumi Ota , Michio Ishikawa , Noriaki Tani , Masanori Hashimoto , Yuzo Murata
发明人： Kyuzo Nakamura , Yoshifumi Ota , Michio Ishikawa , Noriaki Tani , Masanori Hashimoto , Yuzo Murata
IPC分类号： G11B5/73 , G11B5/738
CPC分类号： G11B5/7325 , G11B5/738 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/12847 , Y10T428/12854
摘要： A magnetic recording member having high coercive force, comprising:(a) a non-magnetic substrate;(b) a Cr base film formed on said substrate by a film forming process; and(c) a Co alloy film formed on said Cr base film by the same film forming process as in (b),wherein said Cr base film contains in addition to Cr at least one additional element selected from the group consisting of rare earth elements, Si, Cu, P and Ge, and wherein said Co alloy film is formed by continuous operation of said film forming process without interruption after completion of the formation of said Cr base film.
摘要翻译：具有高矫顽力的磁记录元件，包括：（a）非磁性基片; （b）通过成膜工艺在所述基板上形成的Cr基膜; 和（c）通过与（b）中相同的成膜方法在所述Cr基膜上形成的Co合金膜，其中所述Cr基膜除Cr之外还含有至少一种选自稀土元素 Si，Cu，P和Ge，并且其中所述Co合金膜是在所述Cr基膜的形成完成之后，通过所述成膜工艺的连续操作而不间断地形成的。

5. 发明授权

US5840374A Method of forming a SiO.sub.2 passivation film on a plastic substrate 失效
标题翻译：在塑料基板上形成SiO 2钝化膜的方法
公开(公告)号：US5840374A
公开(公告)日：1998-11-24
申请号：US661500
申请日：1996-06-11
申请人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
发明人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
IPC分类号： C23C16/40 , B05D3/06 , C23C16/22
CPC分类号： C23C16/401
摘要： An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.
摘要翻译：通过等离子体化学气相沉积（CVD）工艺在由塑料材料制成的衬底的表面上形成SiO 2钝化膜，其中使用有机氧化硅作为原料气体。代替具有灰化效应的反应气体，使用Ar，He或NH 3作为反应气体，其用作在不高于基底热变形的温度（即，约 250℃）。因此防止了氧或氢自由基对衬底的灰化。

6. 发明授权

US5554418A Method of forming passivation film 失效
标题翻译：钝化膜形成方法
公开(公告)号：US5554418A
公开(公告)日：1996-09-10
申请号：US310760
申请日：1994-09-27
申请人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
发明人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
IPC分类号： C08J7/06 , C01B33/12 , C23C16/40 , G11B5/72 , G11B5/73 , G11B5/738 , G11B5/84 , G11B7/26 , B05D3/06 , C23C16/00
CPC分类号： C23C16/402
摘要： A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.
摘要翻译：通过等离子体CVD工艺形成钝化膜，其中使用有机氧化硅作为原料气体。当在基板的表面上形成作为钝化膜的SiO 2膜时，使用Ar，He或NH 3气体作为用作分解原料气体的辅助剂的反应性气体。因此防止了氧或氢自由基的底物灰化。可以将CF4或NF3的氟族气体加入反应气体中。可以首先形成如上所述的钝化膜的SiO 2膜作为初始钝化膜，然后通过使用具有灰化效应的反应气体，例如O 2，N 2 O，O 3，可以在初始钝化膜的顶部形成另一钝化膜和H2。

7. 发明申请

US20100301339A1 METHOD OF PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR 有权
标题翻译：生产薄膜晶体管和薄膜晶体管的方法
公开(公告)号：US20100301339A1
公开(公告)日：2010-12-02
申请号：US12808397
申请日：2008-12-12
申请人： Taro Morimura , Toru Kikuchi , Masanori Hashimoto , Shin Asari , Kazuya Saito , Kyuzo Nakamura
发明人： Taro Morimura , Toru Kikuchi , Masanori Hashimoto , Shin Asari , Kazuya Saito , Kyuzo Nakamura
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/02532 , H01L21/02422 , H01L21/02675 , H01L27/1285 , H01L29/66765
摘要： [Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor.[Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided. Moreover, since a maintenance cycle of a laser oscillator becomes longer, a downtime cost of the apparatus can be reduced and productivity can be improved.
摘要翻译：本发明提供一种制造生产率优异且能够防止器件中的晶体管特性变化以提高载流子迁移率的薄膜晶体管的制造方法以及薄膜晶体管。具体实施方式在本发明的薄膜晶体管的制造方法中，使用源电极膜和漏电极膜作为掩模将固态绿色激光照射到非晶硅膜的沟道部上，从而改善流动性。由于通过固体绿色激光的照射使非晶硅膜的通道部分结晶，与使用准分子激光的常规方法相比，激光振荡特性可以更稳定。此外，可以在平面上具有均匀输出特性的大尺寸基板上的激光照射，结果是可以避免器件之间的沟道部分的结晶度的变化。此外，由于激光振荡器的维护周期变长，所以能够降低设备的停机成本，提高生产率。

8. 发明授权

US08673705B2 Method of producing thin film transistor and thin film transistor 有权
标题翻译：薄膜晶体管和薄膜晶体管的制造方法
公开(公告)号：US08673705B2
公开(公告)日：2014-03-18
申请号：US12808397
申请日：2008-12-12
申请人： Taro Morimura , Toru Kikuchi , Masanori Hashimoto , Shin Asari , Kazuya Saito , Kyuzo Nakamura
发明人： Taro Morimura , Toru Kikuchi , Masanori Hashimoto , Shin Asari , Kazuya Saito , Kyuzo Nakamura
IPC分类号： H01L21/84
CPC分类号： H01L21/02532 , H01L21/02422 , H01L21/02675 , H01L27/1285 , H01L29/66765
摘要： [Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor.[Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided. Moreover, since a maintenance cycle of a laser oscillator becomes longer, a downtime cost of the apparatus can be reduced and productivity can be improved.
摘要翻译：本发明提供一种制造生产率优异且能够防止器件中的晶体管特性变化以提高载流子迁移率的薄膜晶体管的制造方法以及薄膜晶体管。具体实施方式在本发明的薄膜晶体管的制造方法中，使用源电极膜和漏电极膜作为掩模将固态绿色激光照射到非晶硅膜的沟道部上，从而改善流动性。由于通过固体绿色激光的照射使非晶硅膜的通道部分结晶，与使用准分子激光的常规方法相比，激光振荡特性可以更稳定。此外，可以在平面上具有均匀输出特性的大尺寸基板上的激光照射，结果是可以避免器件之间的沟道部分的结晶度的变化。此外，由于激光振荡器的维护周期变长，所以能够降低设备的停机成本，提高生产率。

9. 发明申请

US20110204466A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM 审中-公开
标题翻译：光电转换装置制造方法，光电转换装置和光电转换装置制造系统
公开(公告)号：US20110204466A1
公开(公告)日：2011-08-25
申请号：US13061018
申请日：2009-08-28
申请人： Shinichi Asahina , Hirota Uchida , Shin Asari , Masanori Hashimoto , Tetsushi Fujinaga , Tadamasa Kobayashi , Masafumi Wakai , Kenichi Imakita , Yoshinobu Ue , Kazuya Saito , Kyuzo Nakamura
发明人： Shinichi Asahina , Hirota Uchida , Shin Asari , Masanori Hashimoto , Tetsushi Fujinaga , Tadamasa Kobayashi , Masafumi Wakai , Kenichi Imakita , Yoshinobu Ue , Kazuya Saito , Kyuzo Nakamura
IPC分类号： H01L31/105 , H01L31/18 , C23C16/22 , C23C16/50
CPC分类号： H01L31/077 , C23C16/24 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber.
摘要翻译：一种光电转换装置的制造方法，包括：连续地形成构成第一光电转换单元的第一p型半导体层，第一i型半导体层和第一n型半导体层，型半导体层构成第二光电转换单元，在彼此不同的减压室中; 将第二p型半导体层暴露于空气气氛中; 以及在暴露于空气气氛的第二光电转换单元的第二p型半导体层上形成构成第二光电转换单元的第二i型半导体层和第二n型半导体层，在同一减压室内。

10. 发明申请

US20130199572A1 FILM-FORMING APPARATUS, AND METHOD FOR MAINTAINING FILM-FORMING APPARATUS 审中-公开
标题翻译：成膜装置，以及保存成膜装置的方法
公开(公告)号：US20130199572A1
公开(公告)日：2013-08-08
申请号：US13805929
申请日：2011-06-22
申请人： Takuro Hayashi , Kouji Sogabe , Koichi Matsumoto , Masanori Hashimoto , Kyuzo Nakamura , Munemoto Hagiwara , Hiroto Uchida , Katsuhiko Mori , Yasuo Shimizu , Moriaki Sakamoto
发明人： Takuro Hayashi , Kouji Sogabe , Koichi Matsumoto , Masanori Hashimoto , Kyuzo Nakamura , Munemoto Hagiwara , Hiroto Uchida , Katsuhiko Mori , Yasuo Shimizu , Moriaki Sakamoto
IPC分类号： B08B7/00
CPC分类号： B08B7/00 , C23C16/24 , C23C16/4405 , C23C16/4412 , C23C16/50 , C23C16/545 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： Ignition sections are provided at two locations on each of lower portions of the side surfaces on both sides of a film-forming chamber so as to be provided at four locations in total. A flowing current is applied to the ignition sections when a flammable by-product is ignited. A first detecting section for measuring a pressure in the film-forming chamber is formed on the side surface of the film-forming chamber. A second detecting section is formed at the lower portion of the side surface of the film-forming chamber. A third detecting section for measuring a spatial temperature in the film-forming chamber is formed at an upper portion of the film-forming chamber.
摘要翻译：在成膜室的两侧的侧面的每个下部的两个位置处设置点火部，以便总共设置在四个位置。当易燃副产品点燃时，流动电流被施加到点火部分。用于测量成膜室中的压力的第一检测部分形成在成膜室的侧表面上。第二检测部形成在成膜室的侧面的下部。用于测量成膜室中的空间温度的第三检测部分形成在成膜室的上部。

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