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1. 发明授权

US06753232B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06753232B2
公开(公告)日：2004-06-22
申请号：US10139329
申请日：2002-05-07
申请人： Noh-Yeal Kwak , Sang Wook Park
发明人： Noh-Yeal Kwak , Sang Wook Park
IPC分类号： H01L21336
CPC分类号： H01L21/265 , H01L21/2236 , H01L21/2652 , H01L21/26586 , H01L29/4941
摘要： The present invention discloses a method for fabricating a semiconductor device. A stabilized junction is formed by simultaneously adjusting diffusion in a channel direction and a depth direction by restricting transient enhanced diffusion and oxidation enhanced diffusion, and reducing a short channel effect and diffusion in the depth direction, by positioning a nitrified oxide film between a gate electrode and a nitride film spacer formed at side walls of the gate electrode in order to remove defects generated due to stress differences between the gate electrode and the nitride film spacer in a formation process of a PMOS transistor. It is thus possible to form a device having an ultra shallow junction which is not influenced by miniaturization.
摘要翻译：本发明公开了一种半导体器件的制造方法。通过在栅电极之间定位硝化氧化膜，通过同时调节通道方向和深度方向上的扩散，通过限制瞬时增强的扩散和氧化增强的扩散以及减小短沟道效应和深度方向的扩散来形成稳定的结以及形成在栅电极的侧壁处的氮化物膜间隔物，以便在PMOS晶体管的形成过程中消除由于栅电极和氮化物膜间隔物之间的应力差而产生的缺陷。因此，可以形成不受小型化影响的具有超浅结的装置。

2. 发明授权

US06762103B2 Method of forming an isolation film in a semiconductor device 失效
标题翻译：在半导体器件中形成隔离膜的方法
公开(公告)号：US06762103B2
公开(公告)日：2004-07-13
申请号：US10617269
申请日：2003-07-10
申请人： Noh Yeal Kwak , Sang Wook Park , Cha Deok Dong
发明人： Noh Yeal Kwak , Sang Wook Park , Cha Deok Dong
IPC分类号： H01L21336
CPC分类号： H01L21/76229 , H01L21/76235 , H01L21/76237 , H01L27/1052 , H01L27/10894
摘要： Disclosed is a method of forming an isolation film in semiconductor devices using a shallow trench. Trenches are formed in silicon substrates of a memory cell region and a peripheral circuit region. The inert ion is then injected into the surface of the trench in the peripheral circuit region, thus forming an amorphous layer. Thereafter, an oxidization process is implemented so that a thick oxide film is grown due to excessive oxidization at the amorphous layer, thus making thicker the trench in the peripheral circuit region than the trench in the memory cell region by a thickness of the oxide film.
摘要翻译：公开了使用浅沟槽在半导体器件中形成隔离膜的方法。沟槽形成在存储单元区域和外围电路区域的硅衬底中。然后将惰性离子注入到外围电路区域中的沟槽的表面中，从而形成非晶层。此后，进行氧化处理，使得由于在非晶层处的过度氧化而生长厚的氧化膜，从而使外围电路区域中的沟槽比存储单元区域中的沟槽更厚，由此氧化膜的厚度变厚。

3. 发明授权

US06759296B2 Method of manufacturing a flash memory cell 失效
标题翻译：制造闪存单元的方法
公开(公告)号：US06759296B2
公开(公告)日：2004-07-06
申请号：US10286983
申请日：2002-11-04
申请人： Noh Yeal Kwak , Sang Wook Park
发明人： Noh Yeal Kwak , Sang Wook Park
IPC分类号： H01L21336
CPC分类号： H01L29/66825 , H01L21/02164 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02255 , H01L21/02271 , H01L21/28247 , H01L21/28273 , H01L21/3144 , H01L21/31612 , H01L21/3165 , H01L21/3185 , H01L21/76834
摘要： The present invention relates to a method of manufacturing a flash memory cell. The method includes forming a stack gate in which a floating gate and a control gate are stacked at a given region of a semiconductor substrate, and performing a rapid thermal nitrification process to form a nitride film at the side of the stack gate and over the semiconductor substrate. Therefore, the present invention can improve a retention characteristic and can prevent movement of threshold voltage control ions.
摘要翻译：本发明涉及一种制造闪存单元的方法。该方法包括形成堆叠栅极，其中浮置栅极和控制栅极堆叠在半导体衬底的给定区域处，并且执行快速热硝化处理以在堆叠栅极侧和半导体层上形成氮化物膜基质。因此，本发明可以提高保持特性并且可以防止阈值电压控制离子的移动。

4. 发明授权

US08431442B2 Methods of manufacturing semiconductor chips 有权
标题翻译：制造半导体芯片的方法
公开(公告)号：US08431442B2
公开(公告)日：2013-04-30
申请号：US13253425
申请日：2011-10-05
申请人： Sang Wook Park , Tae Gyeong Chung , Ho Geon Song , Won Chul Lim
发明人： Sang Wook Park , Tae Gyeong Chung , Ho Geon Song , Won Chul Lim
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L25/0657 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/73265 , H01L2225/06562 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of manufacturing semiconductor chips includes providing a semiconductor substrate including circuit regions, irradiating the semiconductor substrate with a laser beam onto to form a frangible layer, and polishing the semiconductor substrate to separate the circuit regions of the semiconductor substrate from one another into semiconductor chips. The frangible layer may be removed completely during the polishing of the semiconductor substrate.
摘要翻译：制造半导体芯片的方法包括提供包括电路区域的半导体衬底，用激光束照射半导体衬底以形成易碎层，以及抛光半导体衬底以将半导体衬底的电路区域彼此分离为半导体芯片。在半导体衬底的抛光期间可以完全去除易碎层。

5. 发明授权

US08311401B2 Multimedia playing system and method for playing multimedia using the same 有权
标题翻译：多媒体播放系统及使用其播放多媒体的方法
公开(公告)号：US08311401B2
公开(公告)日：2012-11-13
申请号：US12490541
申请日：2009-06-24
申请人： Sang Wook Park , Noh Sam Park , Jong Hyun Jang , Eui Hyun Paik , Kwang Roh Park
发明人： Sang Wook Park , Noh Sam Park , Jong Hyun Jang , Eui Hyun Paik , Kwang Roh Park
IPC分类号： H04N5/77
CPC分类号： G11B27/10 , H04N5/782 , H04N5/84
摘要： Provided are a multimedia playing system and a method for playing multimedia using the system. The system includes a first multimedia player, a second multimedia player, and a user interface. The first multimedia player includes a first media controller controlling plays of a first video and a first audio in response to multimedia data received from an external device. The second multimedia player includes a second media controller operating independently of the first multimedia player and controlling plays of second video in response to the multimedia data. The user interface transmits synchronization information to the first and second media controller.
摘要翻译：提供了一种多媒体播放系统和使用该系统播放多媒体的方法。该系统包括第一多媒体播放器，第二多媒体播放器和用户界面。第一多媒体播放器包括响应于从外部设备接收的多媒体数据来控制第一视频和第一音频的播放的第一媒体控制器。第二多媒体播放器包括独立于第一多媒体播放器操作的第二媒体控制器，并响应多媒体数据控制第二视频的播放。用户界面向第一和第二媒体控制器发送同步信息。

6. 发明授权

US07581553B2 Domestic injection type ultrasonic washing apparatus 有权
标题翻译：国产注射式超声波清洗机
公开(公告)号：US07581553B2
公开(公告)日：2009-09-01
申请号：US11271340
申请日：2005-11-10
申请人： Ki Hun Kim , Seong Keun Lim , Hyun Chul Lee , Sang Wook Park
发明人： Ki Hun Kim , Seong Keun Lim , Hyun Chul Lee , Sang Wook Park
IPC分类号： B08B3/02
CPC分类号： B08B3/02 , A23N12/02 , B05B1/14 , B05B17/0646 , B08B3/12 , B08B2203/0288
摘要： Disclosed herein is a domestic injection-type ultrasonic washing apparatus comprising an oscillator module and an injector module. The oscillator module includes an oscillation circuit unit provided with various elements to generate electric vibration, ultrasonic vibrators located underneath the oscillation circuit unit and electrically connected to the oscillation circuit unit to convert the electric vibration to mechanical vibration, and a radiation plate having vibrator seating openings. The injector module includes a raw water inlet portion, a fluid passage housing having an inner fluid passage to allow inlet raw water to pass while coming into contact with the radiation plate, and injection nozzles to ultrasonically vibrate and inject the raw water. The washing apparatus achieves reduction in the size thereof, and ease of assembly, repair and exchange of damaged modules. Also, the washing apparatus shows improved radiation effect and uniform supply of wash water.
摘要翻译：本文公开了一种家用注射型超声波清洗装置，其包括振荡器模块和注射器模块。所述振荡器模块包括具有产生电振动的各种元件的振荡电路单元，位于所述振荡电路单元下方并与振荡电路单元电连接以将电振动转换为机械振动的超声波振子，以及具有振动器座部开口。喷射器模块包括原水入口部分，流体通道壳体，其具有内部流体通道，以允许入口原水在与辐射板接触的同时通过;以及喷嘴，用于超声振动并注入原水。洗涤装置的尺寸减小，易于组装，修理和损坏的模块的更换。此外，洗涤装置显示改善的辐射效果和洗涤水的均匀供应。

7. 发明申请

US20080272373A1 Flash Memory Device Having Resistivity Measurement Pattern and Method of Forming the Same 有权
标题翻译：具有电阻率测量图案的闪存器件及其形成方法
公开(公告)号：US20080272373A1
公开(公告)日：2008-11-06
申请号：US12172321
申请日：2008-07-14
申请人： Ki Hong Yang , Sang Wook Park
发明人： Ki Hong Yang , Sang Wook Park
IPC分类号： H01L29/788
CPC分类号： H01L27/11541 , H01L27/105 , H01L27/11526
摘要： A flash memory device has a resistivity measurement pattern and method of forming the same. A trench is formed in an isolation film in a Self-Aligned Floating Gate (SAFG) scheme. The trench is buried to form a resistivity measurement floating gate. This allows the resistivity of the floating gate to be measured even in the SAFG scheme. Contacts for resistivity measurement are directly connected to the resistivity measurement floating gate. Therefore, variation in resistivity measurement values, which is incurred by the parasitic interface, can be reduced.
摘要翻译：闪速存储器件具有电阻率测量图案及其形成方法。在自对准浮动门（SAFG）方案中的隔离膜中形成沟槽。埋入沟槽以形成电阻率测量浮栅。这允许甚至在SAFG方案中测量浮动栅极的电阻率。用于电阻率测量的触点直接连接到电阻率测量浮栅。因此，可以减少由寄生接口引起的电阻率测量值的变化。

8. 发明授权

US06828686B2 Chip size stack package and method of fabricating the same 失效
标题翻译：芯片尺寸堆叠封装及其制造方法
公开(公告)号：US06828686B2
公开(公告)日：2004-12-07
申请号：US10423872
申请日：2003-04-28
申请人： Sang Wook Park
发明人： Sang Wook Park
IPC分类号： H01L2348
CPC分类号： H01L24/05 , H01L21/56 , H01L23/3185 , H01L23/49575 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48463 , H01L2224/73215 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/07811 , H01L2924/12042 , H01L2924/181 , H01L2924/30105 , H01L2224/45099 , H01L2924/00012 , H01L2924/00 , H01L2924/00015 , H01L2224/05599
摘要： A chip size stack package includes two semiconductor chips arranged such that their bond pads-forming surfaces are opposed and insulating layers are applied thereto. Via-holes for exposing bond pads are formed in the insulating layers. Metal traces exposed at both sides of the insulating layers are formed on the via-holes, whereby the insulating layers are bonded to each other and the metal traces are bonded to each other. Ends of metal wires are connected to the metal traces exposed at the insulating layers, and both sides of the chips are molded by an encapsulate leaving the other ends of the metal wires exposed.
摘要翻译：芯片尺寸堆叠封装包括两个半导体芯片，其布置成使得它们的焊盘形成表面相对并且绝缘层被施加到其上。用于暴露接合焊盘的通孔形成在绝缘层中。在通孔上形成在绝缘层的两侧露出的金属迹线，由此绝缘层彼此接合并且金属迹线彼此接合。金属线的端部连接到暴露在绝缘层处的金属迹线，并且芯片的两侧通过封装模制，从而暴露出金属线的另一端。

9. 发明授权

US06777434B2 Thiazolidine-4-one derivative, method for preparing the same, and pharmaceutical composition containing the same 失效
标题翻译：噻唑烷-4-酮衍生物，其制备方法和含有它们的药物组合物
公开(公告)号：US06777434B2
公开(公告)日：2004-08-17
申请号：US10439487
申请日：2003-05-16
申请人： Il Hwan Cho , Jee Woong Lim , Sang Wook Park , Ji Young Noh , Hyung Chul Ryu , Jong Hoon Kim , Myeong Yun Chae , Hyun Jung Park , Sung Hak Jung , Kyu Jeong Yeon , Hae Tak Jin
发明人： Il Hwan Cho , Jee Woong Lim , Sang Wook Park , Ji Young Noh , Hyung Chul Ryu , Jong Hoon Kim , Myeong Yun Chae , Hyun Jung Park , Sung Hak Jung , Kyu Jeong Yeon , Hae Tak Jin
IPC分类号： A61K31426
CPC分类号： C07D277/14
摘要： A thiazolidine-4-one derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided: wherein: R1 and R2 each independently represent hydrogen, C1-C3 alkyl, halogen, methyl substituted with halogen, C1-C3 alkoxy substituted with halogen, cyano, or nitro.
摘要翻译：提供式1的噻唑烷-4-酮衍生物或其无毒盐，其制备方法和含有该衍生物或盐作为活性成分的药物组合物：其中：R 1和R 2 各自独立地表示氢，C1-C3烷基，卤素，被卤素取代的甲基，被卤素，氰基或硝基取代的C1-C3烷氧基。

10. 发明授权

US06714466B2 System of performing a repair analysis for a semiconductor memory device having a redundant architecture 有权
标题翻译：对具有冗余架构的半导体存储器件执行修复分析的系统
公开(公告)号：US06714466B2
公开(公告)日：2004-03-30
申请号：US10080710
申请日：2002-02-25
申请人： Sang Wook Park , Joo Hyung Mun , Hyeok Man Kwon
发明人： Sang Wook Park , Joo Hyung Mun , Hyeok Man Kwon
IPC分类号： G11C700
CPC分类号： G11C29/72 , G11C29/44
摘要： Two temporary buffers are employed alternatively storing a fail address data designated from a test operation, in which one of the temporary buffers transfers the fail address data to a data buffer in order to perform a repair analysis while the other one is storing the fail address data. Accordingly, the test and repair analysis operations are simultaneously performed. The capability of the rearrangement that includes the movement and exchange between the column and row fail address data enhances redundancy efficiency and yields of the memory device.
摘要翻译：采用两个临时缓冲器，其中存储从测试操作指定的故障地址数据，其中一个临时缓冲器将故障地址数据传送到数据缓冲器，以执行修复分析，而另一个存储故障地址数据。因此，同时执行测试和修复分析操作。包括列和行失败地址数据之间的移动和交换的重新布置的能力提高了存储器件的冗余效率和产量。

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