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1. 发明申请

US20130109147A1 Methods of Forming Metal Oxide and Memory Cells 有权
标题翻译：形成金属氧化物和记忆细胞的方法
公开(公告)号：US20130109147A1
公开(公告)日：2013-05-02
申请号：US13282355
申请日：2011-10-26
申请人： Noel Rocklein , D.V. Nirmal Ramaswamy , Dale W. Collins , Swapnil Lengade , Srividya Krishnamurthy , Mark Korber
发明人： Noel Rocklein , D.V. Nirmal Ramaswamy , Dale W. Collins , Swapnil Lengade , Srividya Krishnamurthy , Mark Korber
IPC分类号： H01L21/02 , C01B13/14 , C01F17/00 , C01G21/02 , C01G45/02 , C01G23/04 , C01G49/02 , C01D17/00 , H01L21/28 , C01F11/02
CPC分类号： H01L45/1641 , H01B1/08 , H01L21/283 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147
摘要： Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.
摘要翻译：一些实施例包括形成存储器单元的方法。金属氧化物可以沉积在第一电极上，沉积的金属氧化物具有相对低的结晶度。在沉积金属氧化物之后，金属氧化物内的结晶度可以增加。可以在金属氧化物上形成电介质材料，并且可以在电介质材料上形成第二电极。可以通过热处理来提高结晶度。热处理可以在形成介电材料之前，期间和/或之后进行。

2. 发明授权

US08859382B2 Methods of forming metal oxide and memory cells 有权
标题翻译：形成金属氧化物和记忆细胞的方法
公开(公告)号：US08859382B2
公开(公告)日：2014-10-14
申请号：US13282355
申请日：2011-10-26
申请人： Noel Rocklein , D. V. Nirmal Ramaswamy , Dale W. Collins , Swapnil Lengade , Srividya Krishnamurthy , Mark Korber
发明人： Noel Rocklein , D. V. Nirmal Ramaswamy , Dale W. Collins , Swapnil Lengade , Srividya Krishnamurthy , Mark Korber
IPC分类号： H01L21/20 , H01L45/00
CPC分类号： H01L45/1641 , H01B1/08 , H01L21/283 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147
摘要： Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.
摘要翻译：一些实施例包括形成存储器单元的方法。金属氧化物可以沉积在第一电极上，沉积的金属氧化物具有相对低的结晶度。在沉积金属氧化物之后，金属氧化物内的结晶度可以增加。可以在金属氧化物上形成电介质材料，并且可以在电介质材料上形成第二电极。可以通过热处理来提高结晶度。热处理可以在形成介电材料之前，期间和/或之后进行。

3. 发明申请

US20100176432A1 Memory Cells, Methods Of Forming Dielectric Materials, And Methods Of Forming Memory Cells 有权
标题翻译：记忆细胞，形成介电材料的方法和形成记忆细胞的方法
公开(公告)号：US20100176432A1
公开(公告)日：2010-07-15
申请号：US12351099
申请日：2009-01-09
申请人： D.V. Nirmal Ramaswamy , Noel Rocklein , Kyu S. Min
发明人： D.V. Nirmal Ramaswamy , Noel Rocklein , Kyu S. Min
IPC分类号： H01L29/78 , H01L21/00 , H01L21/3205
CPC分类号： H01L29/7881 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/792
摘要： Some embodiments include memory cells. The memory cells may include a tunnel dielectric material, a charge-retaining region over the tunnel dielectric material, crystalline ultra-high k dielectric material over the charge-retaining region, and a control gate material over the crystalline ultra-high k dielectric material. Additionally, the memory cells may include an amorphous region between the charge-retaining region and the crystalline ultra-high k dielectric material, and/or may include an amorphous region between the crystalline ultra-high k dielectric material and the control gate material. Some embodiments include methods of forming memory cells which contain an amorphous region between a charge-retaining region and a crystalline ultra-high k dielectric material, and/or which contain an amorphous region between a crystalline ultra-high k dielectric material and a control gate material.
摘要翻译：一些实施例包括存储器单元。存储单元可以包括隧道电介质材料，隧道电介质材料上方的电荷保持区域，电荷保持区域上的结晶超高k电介质材料，以及结晶超高k电介质材料上的控制栅极材料。此外，存储器单元可以包括电荷保持区域和结晶超高k电介质材料之间的非晶区域，和/或可以包括晶体超高k电介质材料和控制栅极材料之间的非晶区域。一些实施例包括形成在电荷保持区域和结晶超高k电介质材料之间形成非晶区域的存储单元的方法，和/或在晶体超高k电介质材料和控制栅极之间包含非晶区域的方法材料。

4. 发明授权

US08049304B2 Constructions comprising hafnium oxide and/or zirconium oxide 有权
标题翻译：包含氧化铪和/或氧化锆的构造
公开(公告)号：US08049304B2
公开(公告)日：2011-11-01
申请号：US12422788
申请日：2009-04-13
申请人： Cancheepuram V. Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Daniel Gealy , David Korn
发明人： Cancheepuram V. Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Daniel Gealy , David Korn
IPC分类号： H01L29/92
CPC分类号： C23C16/405 , C23C16/40 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L28/40
摘要： The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.
摘要翻译：本发明包括ALD型方法，其中使用两种或更多种不同的前体与一种或多种反应物形成材料。在特定方面，前体是铪和铝，唯一的反应物是臭氧，并且该材料主要是四方晶相中的铪氧化物。

5. 发明申请

US20110220989A1 Memory Cells, Methods Of Forming Dielectric Materials, And Methods Of Forming Memory Cells 有权
标题翻译：记忆细胞，形成介电材料的方法和形成记忆细胞的方法
公开(公告)号：US20110220989A1
公开(公告)日：2011-09-15
申请号：US13116401
申请日：2011-05-26
申请人： D. V. Nirmal Ramaswamy , Noel Rocklein , Kyu S. Min
发明人： D. V. Nirmal Ramaswamy , Noel Rocklein , Kyu S. Min
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/7881 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/792
摘要： Some embodiments include memory cells. The memory cells may include a tunnel dielectric material, a charge-retaining region over the tunnel dielectric material, crystalline ultra-high k dielectric material over the charge-retaining region, and a control gate material over the crystalline ultra-high k dielectric material. Additionally, the memory cells may include an amorphous region between the charge-retaining region and the crystalline ultra-high k dielectric material, and/or may include an amorphous region between the crystalline ultra-high k dielectric material and the control gate material. Some embodiments include methods of forming memory cells which contain an amorphous region between a charge-retaining region and a crystalline ultra-high k dielectric material, and/or which contain an amorphous region between a crystalline ultra-high k dielectric material and a control gate material.
摘要翻译：一些实施例包括存储器单元。存储单元可以包括隧道电介质材料，隧道电介质材料上方的电荷保持区域，电荷保持区域上的结晶超高k电介质材料，以及结晶超高k电介质材料上的控制栅极材料。此外，存储器单元可以包括电荷保持区域和结晶超高k电介质材料之间的非晶区域，和/或可以包括晶体超高k电介质材料和控制栅极材料之间的非晶区域。一些实施例包括形成在电荷保持区域和结晶超高k电介质材料之间形成非晶区域的存储单元的方法，和/或在晶体超高k电介质材料和控制栅极之间包含非晶区域的方法材料。

6. 发明申请

US20110020999A1 Methods of Forming Dielectric Material-Containing Structures 有权
标题翻译：形成含介电材料的结构的方法
公开(公告)号：US20110020999A1
公开(公告)日：2011-01-27
申请号：US12895535
申请日：2010-09-30
申请人： Noel Rocklein , Chris M. Carlson , Dave Peterson , Cunyu Yang , Praveen Vaidyanathan , Vishwanath Bhat
发明人： Noel Rocklein , Chris M. Carlson , Dave Peterson , Cunyu Yang , Praveen Vaidyanathan , Vishwanath Bhat
IPC分类号： H01L21/02 , H01L21/31 , H01L21/283
CPC分类号： H01L21/28273 , H01L21/02175 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3142 , H01L27/10852 , H01L28/40 , H01L28/91 , H01L29/51 , H01L29/513 , H01L29/78
摘要： Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.
摘要翻译：一些实施例包括电介质结构。这些结构包括彼此直接相对的第一和第二部分。第一部分可以包含第一相和第二相的均匀混合物。第一相可以具有大于或等于25的介电常数，并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成，等于25.一些实施例包括包含上述类型的电介质结构的电气部件，例如电容器和晶体管。一些实施方案包括形成电介质结构的方法，并且一些实施方案包括形成电组件的方法。

7. 发明申请

US20100315760A1 Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials 失效
标题翻译：具有包含多种金属氧化物的材料的介电区域的电容器
公开(公告)号：US20100315760A1
公开(公告)日：2010-12-16
申请号：US12483474
申请日：2009-06-12
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hully , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hully , Chris Carlson
IPC分类号： H01G4/10
CPC分类号： H01L28/56 , H01G4/10 , H01L27/108
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译：公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

8. 发明申请

US20080014694A1 Capacitors and methods of forming capacitors 有权
标题翻译：电容器和形成电容器的方法
公开(公告)号：US20080014694A1
公开(公告)日：2008-01-17
申请号：US11488587
申请日：2006-07-17
申请人： Vishwanath Bhat , Noel Rocklein , F. Daniel Gealy
发明人： Vishwanath Bhat , Noel Rocklein , F. Daniel Gealy
IPC分类号： H01L21/8244
CPC分类号： H01L28/60 , Y10T29/417
摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.
摘要翻译：形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。含TiN材料的TiN被有效氧化，以形成电阻率不大于1欧姆·厘米的导电性TiO 2，其中x越大 0和y为0至1.4。电容器电介质形成在导电TiO 2上。在电容器电介质上形成导电的第二电容器电极材料。考虑了其他方面和实现方式，包括独立于制造方法的电容器。

9. 发明授权

US08236372B2 Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials 失效
标题翻译：形成具有包括多个含金属氧化物的材料的电介质区域的电容器的方法
公开(公告)号：US08236372B2
公开(公告)日：2012-08-07
申请号：US12483455
申请日：2009-06-12
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hall , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hall , Chris Carlson
IPC分类号： B05D5/12
CPC分类号： H01G4/12 , H01G4/1272 , H01G4/33 , H01L28/40
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译：公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

10. 发明授权

US08183110B2 Memory cells, methods of forming dielectric materials, and methods of forming memory cells 有权
标题翻译：记忆单元，介电材料的形成方法以及形成记忆单元的方法
公开(公告)号：US08183110B2
公开(公告)日：2012-05-22
申请号：US13116401
申请日：2011-05-26
申请人： D. V. Nirmal Ramaswamy , Noel Rocklein , Kyu S. Min
发明人： D. V. Nirmal Ramaswamy , Noel Rocklein , Kyu S. Min
IPC分类号： H01L21/336
CPC分类号： H01L29/7881 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/792
摘要： Some embodiments include memory cells. The memory cells may include a tunnel dielectric material, a charge-retaining region over the tunnel dielectric material, crystalline ultra-high k dielectric material over the charge-retaining region, and a control gate material over the crystalline ultra-high k dielectric material. Additionally, the memory cells may include an amorphous region between the charge-retaining region and the crystalline ultra-high k dielectric material, and/or may include an amorphous region between the crystalline ultra-high k dielectric material and the control gate material. Some embodiments include methods of forming memory cells which contain an amorphous region between a charge-retaining region and a crystalline ultra-high k dielectric material, and/or which contain an amorphous region between a crystalline ultra-high k dielectric material and a control gate material.
摘要翻译：一些实施例包括存储器单元。存储单元可以包括隧道电介质材料，隧道电介质材料上方的电荷保持区域，电荷保持区域上的结晶超高k电介质材料，以及结晶超高k电介质材料上的控制栅极材料。此外，存储器单元可以包括电荷保持区域和结晶超高k电介质材料之间的非晶区域，和/或可以包括晶体超高k电介质材料和控制栅极材料之间的非晶区域。一些实施例包括形成在电荷保持区域和结晶超高k电介质材料之间形成非晶区域的存储单元的方法，和/或在晶体超高k电介质材料和控制栅极之间包含非晶区域的方法材料。

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