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1. 发明申请

US20130126906A1 SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR, SILICON CARBIDE BULK SUBSTRATE FOR EPITAXIAL GROWTH AND MANUFACTURING METHOD THEREFOR AND HEAT TREATMENT APPARATUS 有权
标题翻译：硅碳化硅外延晶片及其制造方法，用于外延生长的硅碳化硅基板及其制造方法及热处理设备
公开(公告)号：US20130126906A1
公开(公告)日：2013-05-23
申请号：US13696943
申请日：2011-03-18
申请人： Nobuyuki Tomita , Kenichi Hamano , Masayoshi Tarutani , Yoichiro Mitani , Takeharu Kuroiwa , Masayuki Imaizumi , Hiroaki Sumitani , Kenichi Ohtsuka , Tomoaki Furusho , Takao Sawada , Yuji Abe
发明人： Nobuyuki Tomita , Kenichi Hamano , Masayoshi Tarutani , Yoichiro Mitani , Takeharu Kuroiwa , Masayuki Imaizumi , Hiroaki Sumitani , Kenichi Ohtsuka , Tomoaki Furusho , Takao Sawada , Yuji Abe
IPC分类号： H01L21/02 , H01L29/16
CPC分类号： H01L21/02529 , C30B25/02 , C30B25/186 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02587 , H01L21/0262 , H01L21/02661 , H01L21/6719 , H01L21/68771 , H01L29/1608
摘要： A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.
摘要翻译：提供了一种方法来制造其表面平坦度非常好并且具有非常低的胡萝卜缺陷密度和外延生长后产生的三角形缺陷的碳化硅外延晶片。碳化硅外延晶片是通过第一步骤，在还原气体气氛中，在第一温度T1处理处理时间t，退火碳化硅本体衬底，其从<0001>面倾斜小于5度;第二步骤在第一步骤中，在低于退火温度T1的第二温度T2下进行外延生长的第三步骤，同时至少提供包含硅原子的气体和包括碳的气体原子

2. 发明授权

US08679952B2 Method of manufacturing silicon carbide epitaxial wafer 有权
标题翻译：制造碳化硅外延片的方法
公开(公告)号：US08679952B2
公开(公告)日：2014-03-25
申请号：US13696943
申请日：2011-03-18
申请人： Nobuyuki Tomita , Kenichi Hamano , Masayoshi Tarutani , Yoichiro Mitani , Takeharu Kuroiwa , Masayuki Imaizumi , Hiroaki Sumitani , Kenichi Ohtsuka , Tomoaki Furusho , Takao Sawada , Yuji Abe
发明人： Nobuyuki Tomita , Kenichi Hamano , Masayoshi Tarutani , Yoichiro Mitani , Takeharu Kuroiwa , Masayuki Imaizumi , Hiroaki Sumitani , Kenichi Ohtsuka , Tomoaki Furusho , Takao Sawada , Yuji Abe
IPC分类号： H01L21/20
CPC分类号： H01L21/02529 , C30B25/02 , C30B25/186 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02587 , H01L21/0262 , H01L21/02661 , H01L21/6719 , H01L21/68771 , H01L29/1608
摘要： A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.
摘要翻译：提供了一种方法来制造其表面平坦度非常好并且具有非常低的胡萝卜缺陷密度和外延生长后产生的三角形缺陷的碳化硅外延晶片。碳化硅外延晶片是通过第一步骤，在还原气体气氛中，在第一温度T1处理处理时间t，退火碳化硅本体衬底，其从<0001>面倾斜小于5度;第二步骤在第一步骤中，在低于退火温度T1的第二温度T2下进行外延生长的第三步骤，同时至少提供包含硅原子的气体和包括碳的气体原子

3. 发明授权

US4419889A Moisture sensitive device 失效
标题翻译：湿度敏感装置
公开(公告)号：US4419889A
公开(公告)日：1983-12-13
申请号：US248374
申请日：1981-03-27
申请人： Katsutoshi Muto , Takao Sawada , Yoshiharu Komine
发明人： Katsutoshi Muto , Takao Sawada , Yoshiharu Komine
IPC分类号： G01N27/12 , H05B6/80 , G01W1/00
CPC分类号： H05B6/6458 , G01N27/121
摘要： A moisture sensitive device is disclosed which comprises a moisture sensitive element including a material comprising a hydroxyapatite, i.e. M.sub.10 (PO.sub.4).sub.6 (OH).sub.2, wherein M is at least one member selected from the group consisting of Sr, Ca and Ba, at least two electrodes formed on the moisture sensitive element, with the electrodes being separated by the element, and electrical leads connected to each of the electrodes.
摘要翻译：公开了一种湿度敏感装置，其包括湿敏元件，其包括含有羟基磷灰石的材料，即M10（PO4）6（OH）2，其中M是选自Sr，Ca和Ba中的至少一种，在形成在湿敏元件上的至少两个电极，其中电极被元件分离，电引线连接到每个电极。

4. 发明授权

US06583561B2 Material for converting ultraviolet ray and display device using the same 失效
标题翻译：用于转换紫外线的材料和使用其的显示装置
公开(公告)号：US06583561B2
公开(公告)日：2003-06-24
申请号：US09782022
申请日：2001-02-14
申请人： Takao Sawada , Keiji Fukuyama , Noritsuna Hashimoto , Ko Sano , Manabu Akiba
发明人： Takao Sawada , Keiji Fukuyama , Noritsuna Hashimoto , Ko Sano , Manabu Akiba
IPC分类号： H01J1749
CPC分类号： H01J11/12 , C09K11/77 , H01J11/42
摘要： The object of the present invention is to provide a gas discharge display device having improved luminous efficiency by effectively using ultraviolet ray, which is absorbed in a partition wall or a protective film and the like without contributing to excitation of a fluorescent material. By adding gadolinium to the materials excluding the fluorescent material among structures surrounding the discharge cell, ultraviolet ray having a wavelength of 315 nm is generated, which can excite the fluorescent material. The ultraviolet ray excites the fluorescent material to generate visible light, and then, electric-light conversion efficiency is improved.
摘要翻译：本发明的目的是提供一种气体放电显示装置，其通过有效地使用紫外线来提高发光效率，该紫外线吸收在分隔壁或保护膜等中而不会有助于荧光材料的激发。通过在除了放电单元周围的结构中的荧光材料之外的材料中添加钆，产生波长为315nm的紫外线，可以激发荧光材料。紫外线激发荧光材料以产生可见光，然后提高电光转换效率。

5. 发明授权

US3997350A Holographic storage material 失效
标题翻译：全息存储材料
公开(公告)号：US3997350A
公开(公告)日：1976-12-14
申请号：US455353
申请日：1974-03-27
申请人： Hirofumi Ikeo , Shoichi Noda , Takao Sawada , Eichi Okamoto , Katsutoshi Muto
发明人： Hirofumi Ikeo , Shoichi Noda , Takao Sawada , Eichi Okamoto , Katsutoshi Muto
IPC分类号： G02F1/05 , G02B5/32
CPC分类号： G02F1/0541
摘要： Holographic storage materials are disclosed including lithium niobate in the form of a single crystal added with either from 0.001 to 3.0 molar percent of iridium or from 0.01 to 1.0 molar percent of uranium for the three dimensional holography.
摘要翻译：公开了全息存储材料，其包括添加有0.001至3.0摩尔％的铱的单晶形式的铌酸锂或用于三维全息术的铀的0.01至1.0摩尔％。

6. 发明申请

US20090042375A1 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20090042375A1
公开(公告)日：2009-02-12
申请号：US12165841
申请日：2008-07-01
申请人： Takao Sawada , Tomokatsu Watanabe
发明人： Takao Sawada , Tomokatsu Watanabe
IPC分类号： H01L21/265
CPC分类号： H01L29/7802 , H01L21/045 , H01L21/046 , H01L21/0465 , H01L21/67109 , H01L29/1608 , H01L29/66068
摘要： A method of manufacturing a silicon carbide semiconductor device includes a step of ion-implanting an impurity in a surface of a silicon carbide wafer (1 and 2); a step of forming a carbon protection film (6) of a predetermined thickness over the entire surface of the silicon carbide wafer (1 and 2) having been ion-implanted with the impurity, by a chemical vapor deposition method that deposits a film by pyrolyzing a hydrocarbon gas; and a step of annealing the silicon carbide wafer (1 and 2) having been formed with the carbon protection film (6). Thereby, the carbon protection film (6) can be formed that contains extremely few contaminants, and prevents step bunching from creating on the surface of the silicon carbide wafer (1 and 2) and crystal defects created therein due to unbalanced thermal stress form increasing.
摘要翻译：制造碳化硅半导体器件的方法包括在碳化硅晶片（1和2）的表面离子注入杂质的步骤; 在通过离子注入杂质的碳化硅晶片（1和2）的整个表面上形成预定厚度的碳保护膜（6）的步骤，通过化学气相沉积法，通过热解沉积膜烃气; 以及退火已经形成有碳保护膜（6）的碳化硅晶片（1和2）的步骤。因此，可以形成含有极少污染物的碳保护膜（6），并且防止在碳化硅晶片（1和2）的表面上形成步骤聚集和由于不平衡的热应力增加而产生的晶体缺陷。

7. 发明授权

US07820534B2 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US07820534B2
公开(公告)日：2010-10-26
申请号：US12165841
申请日：2008-07-01
申请人： Takao Sawada , Tomokatsu Watanabe
发明人： Takao Sawada , Tomokatsu Watanabe
IPC分类号： H01L21/265
CPC分类号： H01L29/7802 , H01L21/045 , H01L21/046 , H01L21/0465 , H01L21/67109 , H01L29/1608 , H01L29/66068
摘要： A method of manufacturing a silicon carbide semiconductor device includes ion-implanting an impurity in a surface of a silicon carbide wafer, and forming a carbon protection film of a predetermined thickness over all surfaces of the silicon carbide wafer, which has been ion-implanted with the impurity, by a chemical vapor deposition method that deposits a film by pyrolyzing a hydrocarbon gas. The method also includes annealing the silicon carbide wafer after the forming the carbon protection film.
摘要翻译：制造碳化硅半导体器件的方法包括在碳化硅晶片的表面中离子注入杂质，并在已经离子注入的碳化硅晶片的所有表面上形成预定厚度的碳保护膜通过化学气相沉积法，通过热解烃气体沉积膜来形成杂质。该方法还包括在形成碳保护膜之后退火碳化硅晶片。

8. 发明授权

US07229328B2 Female contact 有权
标题翻译：女性接触
公开(公告)号：US07229328B2
公开(公告)日：2007-06-12
申请号：US11016568
申请日：2004-12-17
申请人： Takao Sawada , Keichiro Ikuta , Masato Wada
发明人： Takao Sawada , Keichiro Ikuta , Masato Wada
IPC分类号： H01R11/22
CPC分类号： H01R43/16 , H01R13/113 , H01R13/428
摘要： A female contact comprises a tube-shaped socket having a male-contact accommodation space, and a flat spring held in the socket so as to apply elastic force to a male contact. A notch is formed at a male-contact inlet of the socket. A hook formed at one end of the flat spring is engaged with the notch, so that the flat spring is latched at the male-contact inlet.
摘要翻译：阴接触件包括具有阳接触容纳空间的管状插座和保持在插座中的扁平弹簧，以向男性接触件施加弹性力。在插座的阳接触入口处形成凹口。形成在弹簧的一端的钩与凹口接合，使得弹簧在阳接触入口处被锁定。

9. 发明申请

US20050231093A1 Method of reducing fluctuation in cut-off voltage, cathode for electron tube, and method for manufacturing cathode for electronic tube 审中-公开
标题翻译：降低截止电压波动的方法，电子管用阴极及电子管用阴极制造方法
公开(公告)号：US20050231093A1
公开(公告)日：2005-10-20
申请号：US10512082
申请日：2002-06-19
申请人： Takao Sawada , Shuhei Nakata , Katsumi Oono , Hiroshi Yamaguchi
发明人： Takao Sawada , Shuhei Nakata , Katsumi Oono , Hiroshi Yamaguchi
IPC分类号： H01J1/14 , H01J1/20 , H01J1/26 , H01J9/04
CPC分类号： H01J9/042 , H01J1/26
摘要： A method of reducing a fluctuation in a cut-off voltage of a cathode for an electron tube in which a metal layer for protrusively deforming a cathode substrate when heated is formed on a surface of the cathode substrate, and an electron emissive material layer is formed on the front face of the cathode substrate directly or through the metal layer and a heater for heating the electron emissive material layer to emit a thermion from a front face of the electron emissive material layer is provided. When the front face of the electron emissive material layer is consumed and retreats, the protrusive deformation of the cathode substrate by the metal layer is induced by a heating operation of the heater so that the front face of the electron emissive material layer is correspondingly deformed protrusively.
摘要翻译：形成电子管的阴极的截止电压波动的方法，其中在阴极基板的表面上形成有用于在加热时使阴极基板突出变形的金属层和电子发射材料层提供了直接或通过金属层的阴极基板的正面，以及用于加热电子发射材料层以从电子发射材料层的正面发射热离子的加热器。当电子发射材料层的前表面消耗并退回时，由加热器的加热操作引起阴极基板由金属层引起的突出变形，使得电子发射材料层的正面相应地突出地变形。

10. 发明申请

US20050164567A1 Female contact 有权
标题翻译：女性接触
公开(公告)号：US20050164567A1
公开(公告)日：2005-07-28
申请号：US11016568
申请日：2004-12-17
申请人： Takao Sawada , Keichiro Ikuta , Masato Wada
发明人： Takao Sawada , Keichiro Ikuta , Masato Wada
IPC分类号： H01R13/11 , H01R13/187 , H01R13/40 , H01R13/428 , H01R43/16 , H01R11/22
CPC分类号： H01R43/16 , H01R13/113 , H01R13/428
摘要： A female contact comprises a tube-shaped socket having a male-contact accommodation space, and a flat spring held in the socket so as to apply elastic force to a male contact. A notch is formed at a male-contact inlet of the socket. A hook formed at one end of the flat spring is engaged with the notch, so that the flat spring is latched at the male-contact inlet.
摘要翻译：阴接触件包括具有阳接触容纳空间的管状插座和保持在插座中的扁平弹簧，以向男性接触件施加弹性力。在插座的阳接触入口处形成凹口。形成在弹簧的一端的钩与凹口接合，使得弹簧在阳接触入口处被锁定。

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