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1. 发明授权

US06858489B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US06858489B2
公开(公告)日：2005-02-22
申请号：US10656142
申请日：2003-09-08
申请人： Nobuyuki Sekikawa , Koichi Hirata , Masaaki Momen , Shinya Enomoto
发明人： Nobuyuki Sekikawa , Koichi Hirata , Masaaki Momen , Shinya Enomoto
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L21/00
CPC分类号： H01L27/0629
摘要： This invention is directed to the reduction of voltage dependence and thus allows easy design of integrated semiconductor circuits. The device is equipped with a P− type resistance layer, in which a first voltage is applied to one end and a second voltage is applied to the other end and which is formed on the surface of an N-well region on the semiconductor substrate, a thin oxide film on the resistance layer, and a resistance bias electrode which includes the silicon layer formed on the thin oxide film. By adjusting the voltage applied to the resistance bias electrode, the voltage dependence of the resistance of the resistance layer is reduced.
摘要翻译：本发明涉及降低电压依赖性，从而允许集成半导体电路的简单设计。该器件配备有P-型电阻层，其中第一电压施加到一端，并且第二电压施加到另一端，并且形成在半导体衬底上的N阱区域的表面上，电阻层上的薄氧化膜，以及包含在薄氧化膜上形成的硅层的电阻偏置电极。通过调整施加到电阻偏置电极的电压，电阻层的电阻的电压依赖性降低。

2. 发明授权

US07125787B2 Method of manufacturing insulated gate semiconductor device 有权
标题翻译：绝缘栅半导体器件的制造方法
公开(公告)号：US07125787B2
公开(公告)日：2006-10-24
申请号：US10720378
申请日：2003-11-25
申请人： Nobuyuki Sekikawa , Masaaki Momen , Wataru Andoh , Koichi Hirata
发明人： Nobuyuki Sekikawa , Masaaki Momen , Wataru Andoh , Koichi Hirata
IPC分类号： H01L21/3205 , H01L21/4763 , H01L29/76
CPC分类号： H01L29/66575 , H01L29/42368 , H01L29/7834
摘要： A gate electrode includes a first polysilicon film remaining on a first oxide film, a part of a second polysilicon layer 8 superimposed on the polysilicon layer, and a part of the second polysilicon layer partially extending over second gate oxide films. Thus, the thickness of the gate electrode on the first gate oxide film is the same as that of the gate electrode of the prior art, but the film thickness t2 of the gate electrode 10 on the second gate oxide films 6A and 6B is thinner than the thickness t1 of the prior art. Therefore, the height gap h2 between the gate electrode 10 and the N+type source layer 11 and the height gap h2 between the gate electrode 10 and the N+type drain layer 12 become smaller compared to those of prior art, leading to the improved flatness of the interlayer oxide film 13.
摘要翻译：栅电极包括残留在第一氧化膜上的第一多晶硅膜，叠加在多晶硅层上的第二多晶硅层8的一部分，以及部分地延伸在第二栅极氧化物膜上的第二多晶硅层的一部分。因此，第一栅极氧化膜上的栅电极的厚度与现有技术的栅电极的厚度相同，但是第二栅极氧化膜6A和6B上的栅电极10的膜厚度t 2 比现有技术的厚度t 1薄。因此，与现有技术相比，栅电极10和N +型源极层11之间的高度间隙h 2和栅电极10与N +型漏极层12之间的高度间隙h 2变小，层间氧化膜13的平坦度提高。

3. 发明授权

US06690070B2 Insulated gate semiconductor device and its manufacturing method 有权
标题翻译：绝缘栅半导体器件及其制造方法
公开(公告)号：US06690070B2
公开(公告)日：2004-02-10
申请号：US09925628
申请日：2001-08-10
申请人： Nobuyuki Sekikawa , Masaaki Momen , Wataru Andoh , Koichi Hirata
发明人： Nobuyuki Sekikawa , Masaaki Momen , Wataru Andoh , Koichi Hirata
IPC分类号： H01L31119
CPC分类号： H01L29/66575 , H01L29/42368 , H01L29/7834
摘要： A gate electrode includes a first polysilicon film remaining on a first oxide film, a part of a second polysilicon layer 8 superimposed on the polysilicon layer, and a part of the second polysilicon layer partially extending over second gate oxide films. Thus, the thickness of the gate electrode on the first gate oxide film is the same as that of the gate electrode of the prior art, but the film thickness t2 of the gate electrode 10 on the second gate oxide films 6A and 6B is thinner than the thickness t1 of the prior art. Therefore, the height gap h2 between the gate electrode 10 and the N + type source layer 11 and the height gap h2 between the gate electrode 10 and the N + type drain layer 12 become smaller compared to those of prior art, leading to the improved flatness of the interlayer oxide film 13.
摘要翻译：栅电极包括残留在第一氧化膜上的第一多晶硅膜，叠加在多晶硅层上的第二多晶硅层8的一部分，以及部分地延伸在第二栅极氧化物膜上的第二多晶硅层的一部分。因此，第一栅极氧化膜上的栅电极的厚度与现有技术的栅电极的厚度相同，但是第二栅极氧化膜6A和6B上的栅电极10的膜厚度t2比现有技术的厚度t1。因此，与现有技术相比，栅电极10和N +型源极层11之间的高度间隙h2和栅电极10与N +型漏层12之间的高度间隙h2变小层间氧化膜13的平坦度。

4. 发明授权

US06670236B2 Semiconductor device having capacitance element and method of producing the same 有权
标题翻译：具有电容元件的半导体器件及其制造方法
公开(公告)号：US06670236B2
公开(公告)日：2003-12-30
申请号：US09924047
申请日：2001-08-07
申请人： Nobuyuki Sekikawa , Koichi Hirata , Wataru Andoh , Noriyasu Katagiri
发明人： Nobuyuki Sekikawa , Koichi Hirata , Wataru Andoh , Noriyasu Katagiri
IPC分类号： H01L218242
CPC分类号： H01L28/40 , H01L27/1085 , H01L29/94
摘要： To shorten the production process of the semiconductor device having the capacitance element. The pad oxide film (2) and the first polycrystalline silicon layer (3) are used as a stress buffering material at the time of formation of the element separation oxide film. These are not removed and used as the capacitance insulation film and a portion of the upper electrode of the capacitance element. Thereby, the removing process of the pad•polycrystalline silicon layer, and the dummy oxidation and its removing process in the conventional example, can be omitted and the process can be shortened. Further, a problem of the impurity enhanced oxidation at the time of formation of the capacitance insulation film can be solved.
摘要翻译：缩短具有电容元件的半导体器件的制造工序。在形成元件分离氧化膜时，将衬垫氧化膜（2）和第一多晶硅层（3）用作应力缓冲材料。这些不被去除并用作电容绝缘膜和电容元件的上部电极的一部分。由此，可以省略在多个实施例中的多晶硅层的去除处理以及虚拟氧化及其去除工艺，并且可以缩短处理。此外，可以解决在形成电容绝缘膜时杂质增强氧化的问题。

5. 发明授权

US06307251B1 Semiconductor device having capacitance element and method of producing the same 有权
标题翻译：具有电容元件的半导体器件及其制造方法
公开(公告)号：US06307251B1
公开(公告)日：2001-10-23
申请号：US09444820
申请日：1999-11-22
申请人： Nobuyuki Sekikawa , Koichi Hirata , Wataru Andoh , Noriyasu Katagiri
发明人： Nobuyuki Sekikawa , Koichi Hirata , Wataru Andoh , Noriyasu Katagiri
IPC分类号： H01L2900
CPC分类号： H01L28/40 , H01L27/1085 , H01L29/94
摘要： To shorten the production process of the semiconductor device having the capacitance element. The pad oxide film (2) and the first polycrystalline silicon layer (3) are used as a stress buffering material at the time of formation of the element separation oxide film. These are not removed and used as the capacitance insulation film and a portion of the upper electrode of the capacitance element. Thereby, the removing process of the pad.polycrystalline silicon layer, and the dummy oxidation and its removing process in the conventional example, can be omitted and the process can be shortened. Further, a problem of the impurity enhanced oxidation at the time of formation of the capacitance insulation film can be solved.
摘要翻译：缩短具有电容元件的半导体器件的制造工序。在形成元件分离氧化膜时，将衬垫氧化膜（2）和第一多晶硅层（3）用作应力缓冲材料。这些不被去除并用作电容绝缘膜和电容元件的上部电极的一部分。由此，可以省略在多个实施例中的多晶硅层的去除处理以及虚拟氧化及其去除工艺，并且可以缩短处理。此外，可以解决在形成电容绝缘膜时杂质增强氧化的问题。

6. 发明授权

US08479249B2 Display device, program and computer readable storage medium on which said program is stored 失效
标题翻译：存储所述程序的显示装置，程序和计算机可读存储介质
公开(公告)号：US08479249B2
公开(公告)日：2013-07-02
申请号：US13497539
申请日：2010-09-22
申请人： Akira Koike , Kohichi Takaku , Takamasa Shimizu , Masahiko Takiguchi , Akiyoshi Ohya , Atsushi Ogawa , Koichi Hirata , Osamu Fujii
发明人： Akira Koike , Kohichi Takaku , Takamasa Shimizu , Masahiko Takiguchi , Akiyoshi Ohya , Atsushi Ogawa , Koichi Hirata , Osamu Fujii
IPC分类号： H04N7/173
CPC分类号： H04N21/234327 , H04N5/57 , H04N21/4122 , H04N21/4722
摘要： A television receiver for content with which genre information is associated includes: a basic picture quality information receiving section which associates, with a single piece of genre information, a plurality of candidates for picture quality information regarding the content with which the genre information is associated, and which receives basic picture quality information indicating which one of the plurality of candidates is based on; a picture quality correction information creating section which receives picture quality correction information for further correcting the picture quality, and which creates, in accordance with the basic picture quality information and the picture quality correction information, information for correcting the picture quality; and a picture processing section which corrects the picture quality and which creates a picture to be displayed by a liquid crystal display device.
摘要翻译：用于与类型信息相关联的内容的电视接收机包括：基本图像质量信息接收部分，其与单个类型信息相关联关于与类型信息相关联的内容的图像质量信息的多个候选，并且其接收指示所述多个候选中的哪一个是基于的基本图像质量信息; 图像质量校正信息创建部分，其接收用于进一步校正图像质量的图像质量校正信息，并且根据基本图像质量信息和图像质量校正信息创建用于校正图像质量的信息; 以及图像处理部，其校正图像质量并且创建要由液晶显示装置显示的图像。

7. 发明申请

US20120233634A1 DISPLAY DEVICE, PROGRAM AND COMPUTER READABLE STORAGE MEDIUM ON WHICH SAID PROGRAM IS STORED 失效
标题翻译：显示设备，程序和计算机可读存储介质，存储程序存储
公开(公告)号：US20120233634A1
公开(公告)日：2012-09-13
申请号：US13497539
申请日：2010-09-22
申请人： Akira Koike , Kohichi Takaku , Takamasa Shimizu , Masahiko Takiguchi , Akiyoshi Ohya , Atsushi Ogawa , Koichi Hirata , Osamu Fujii
发明人： Akira Koike , Kohichi Takaku , Takamasa Shimizu , Masahiko Takiguchi , Akiyoshi Ohya , Atsushi Ogawa , Koichi Hirata , Osamu Fujii
IPC分类号： H04N21/24
CPC分类号： H04N21/234327 , H04N5/57 , H04N21/4122 , H04N21/4722
摘要： A television receiver for content with which genre information is associated includes: a basic picture quality information receiving section which associates, with a single piece of genre information, a plurality of candidates for picture quality information regarding the content with which the genre information is associated, and which receives basic picture quality information indicating which one of the plurality of candidates is based on; a picture quality correction information creating section which receives picture quality correction information for further correcting the picture quality, and which creates, in accordance with the basic picture quality information and the picture quality correction information, information for correcting the picture quality; and a picture processing section which corrects the picture quality and which creates a picture to be displayed by a liquid crystal display device.
摘要翻译：用于与类型信息相关联的内容的电视接收机包括：基本图像质量信息接收部分，其与单个类型信息相关联关于与类型信息相关联的内容的图像质量信息的多个候选，并且其接收指示所述多个候选中的哪一个是基于的基本图像质量信息; 图像质量校正信息创建部分，其接收用于进一步校正图像质量的图像质量校正信息，并且根据基本图像质量信息和图像质量校正信息创建用于校正图像质量的信息; 以及图像处理部，其校正图像质量并且创建要由液晶显示装置显示的图像。

8. 发明授权

US06777277B2 Manufacturing method of Schottky barrier diode 有权
标题翻译：肖特基势垒二极管的制造方法
公开(公告)号：US06777277B2
公开(公告)日：2004-08-17
申请号：US10205605
申请日：2002-07-26
申请人： Tetsuro Asano , Katsuaki Onoda , Yoshibumi Nakajima , Shigeyuki Murai , Hisaaki Tominaga , Koichi Hirata , Mikito Sakakibara , Hidetoshi Ishihara
发明人： Tetsuro Asano , Katsuaki Onoda , Yoshibumi Nakajima , Shigeyuki Murai , Hisaaki Tominaga , Koichi Hirata , Mikito Sakakibara , Hidetoshi Ishihara
IPC分类号： H01L21338
CPC分类号： H01L29/66143 , H01L24/05 , H01L29/872 , H01L2224/04042 , H01L2224/45144 , H01L2224/4847 , H01L2924/14 , H01L2924/00
摘要： A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. An insulating region is formed through the n epitaxial layer so that an anode bonding pad is isolated form other elements of the device at a cathode voltage. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.
摘要翻译：肖特基势垒二极管具有形成在设置在GaAs衬底上的n外延层中的肖特基接触区域和围绕肖特基接触区域的欧姆电极。欧姆电极直接设置在形成在基板上的杂质注入区域上。通过n外延层形成绝缘区域，使得阳极接合焊盘在阴极电压下与器件的其它元件隔离。该器件的平面结构不包括传统的聚酰亚胺层，因此具有比常规器件更好的高频特性。

9. 发明授权

US06727559B2 Compound semiconductor device 失效
标题翻译：复合半导体器件
公开(公告)号：US06727559B2
公开(公告)日：2004-04-27
申请号：US10177762
申请日：2002-06-24
申请人： Tetsuro Asano , Masahiro Uekawa , Koichi Hirata , Mikito Sakakibara
发明人： Tetsuro Asano , Masahiro Uekawa , Koichi Hirata , Mikito Sakakibara
IPC分类号： H01L2976
CPC分类号： H01L24/06 , H01L23/4824 , H01L24/45 , H01L29/41758 , H01L29/42312 , H01L2224/05552 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/45015 , H01L2224/45117 , H01L2224/45144 , H01L2224/45155 , H01L2224/48091 , H01L2224/4911 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/0103 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/1306 , H01L2924/14 , H01L2924/1423 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/01032 , H01L2924/00
摘要： A local oscillation FET has a source connecting pad, a drain connecting pad and a gate connecting pad. The source connecting pad occupies one corner of a substrate, and the drain and gate connecting pads are placed at the neighboring corners so that the three connecting pads form an L shape on the substrate. As a modification to this configuration, another source connecting pad is placed at the remaining corner of the substrate so that the drain and gate connecting pads are shielded from each other by the two source connecting pads. These device configurations contribute to size reduction of the local oscillation FET.
摘要翻译：本地振荡FET具有源极连接焊盘，漏极连接焊盘和栅极连接焊盘。源极连接焊盘占据衬底的一个角，并且漏极和栅极连接焊盘被放置在相邻的拐角处，使得三个连接焊盘在衬底上形成L形。作为该配置的修改，另一个源极连接焊盘放置在衬底的其余角部处，使得漏极和栅极连接焊盘通过两个源极连接焊盘彼此屏蔽。这些器件配置有助于本地振荡FET的尺寸减小。

10. 发明授权

US4498078A Sewing machine with a voice warning device 失效
标题翻译：缝纫机配有语音报警装置
公开(公告)号：US4498078A
公开(公告)日：1985-02-05
申请号：US336944
申请日：1982-01-04
申请人： Motokazu Yoshimura , Michitaka Takiguchi , Fujio Horie , Koichi Hirata
发明人： Motokazu Yoshimura , Michitaka Takiguchi , Fujio Horie , Koichi Hirata
IPC分类号： D05B29/06 , D05B69/36 , G08B19/00 , G08B21/00
CPC分类号： D05B69/36 , G08B19/00 , D05B29/06 , D05D2205/14 , D05D2205/16 , G05B2219/23386
摘要： A sewing machine aurally informs an operator of abnormal conditions which accidentally have taken, or are taking, place by means of a vocal indication. One group of speech data corresponding to an accidentally occurring abnormal condition is selected from among plural groups of speech data according to a detection signal from a plurality of abnormal condition detectors disposed in the machine. A voice signal corresponding to the selected group of speech data is generated in relation to operation of a manual device e.g. a button such as a switch, for the start of sewing. The operator can hear the warning voice due to this vocal indication simultaneously with the operation of the manual button for the start, whereby he/she is prevented from starting of the machine while the abnormal condition exists.
摘要翻译：一台缝纫机通过声带指示通知操作者意外地采取或正在进行的异常情况。根据来自设置在机器中的多个异常状态检测器的检测信号，从多组语音数据中选择对应于意外发生的异常状态的一组语音数据。与所选择的语音数据组对应的语音信号相对于手动设备的操作生成。一个按钮，如开关，开始缝制。操作者可以在开始手动按钮的操作的同时听到由于该声音指示引起的警告声音，从而在异常状态存在的情况下防止其启动机器。

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