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1. 发明授权

US6104738A Semiconductor laser and process for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US6104738A
公开(公告)日：2000-08-15
申请号：US894763
申请日：1997-11-13
申请人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui , Yuichi Inaba
发明人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui , Yuichi Inaba
IPC分类号： H01S5/042 , H01S5/10 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/323 , H01S3/19 , H01S3/08
CPC分类号： H01S5/10 , H01S2301/18 , H01S5/0425 , H01S5/1014 , H01S5/1064 , H01S5/12 , H01S5/1206 , H01S5/1215 , H01S5/1218 , H01S5/1225 , H01S5/1228 , H01S5/20 , H01S5/2036 , H01S5/2275 , H01S5/32391
摘要： In a semiconductor laser device 100, an n-type InGaAsP light confinement layer 2, a multiple quantum well active layer 3, a p-type InGaAsP light confinement layer 4, and a p-type InP cladding layer 5 are formed on an n-type InP substrate 1 to be in a mesa structure extending in stripes along the cavity length direction. Moreover, regions on both sides of this striped mesa are buried with a p-type InP current blocking layer 6 and an n-type InP current blocking layer 7. Furthermore, a p-type InP burying layer 8 and a p-type InGaAsP contact layer 9 are formed thereon. The oscillation wavelength of the semiconductor laser device 100 is around 1.3 .mu.m. The stripe width of the active layer 3 is such that the width W1 at the front end face and the width W2 at the rear end face have a relationship of W1
摘要翻译： PCT No.PCT / JP96 / 03837第 371日期：1997年11月13日 102（e）1997年11月13日PCT PCT 1996年12月26日PCT公布。出版物WO97 / 24787 日期1997年7月10日在半导体激光装置100中，n型InGaAsP光限制层2，多量子阱活性层3，p型InGaAsP光限制层4和p型InP包覆层5为在n型InP衬底1上形成为沿着空腔长度方向以条纹延伸的台面结构。此外，这种条状台面的两侧的区域用p型InP电流阻挡层6和n型InP电流阻挡层7埋设。此外，p型InP掩埋层8和p型InGaAsP接触层9形成在其上。半导体激光装置100的振荡波长约为1.3μm。有源层3的条带宽度使得前端面处的宽度W1和后端面的宽度W2具有W1

2. 发明授权

US5793788A Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same 失效
标题翻译：包含铂层的p型非合金电极的半导体发光元件及其制造方法
公开(公告)号：US5793788A
公开(公告)日：1998-08-11
申请号：US693806
申请日：1996-08-01
申请人： Yuichi Inaba , Kiyoshi Fujihara , Masato Ishino , Takeshi Shimazaki , Isao Kidoguchi
发明人： Yuichi Inaba , Kiyoshi Fujihara , Masato Ishino , Takeshi Shimazaki , Isao Kidoguchi
IPC分类号： H01L33/30 , H01L33/32 , H01L33/40 , H01S5/042 , H01S5/223 , H01S5/227 , H01S5/30 , H01S3/19 , H01L23/48 , H01L33/00
CPC分类号： H01L33/40 , H01S5/0425 , H01L33/30 , H01L33/32 , H01S5/0421 , H01S5/2231 , H01S5/2275 , H01S5/2277 , H01S5/3054
摘要： A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer.
摘要翻译：半导体发光元件包括p型电极，该p型电极又包括至少包括Pt层的接触电极层。特别地，半导体发光元件还包括至少包括n型包覆层，有源层和p型覆层的层状结构; 以及形成在层状结构上方的p型接触层，并且在p型接触层上形成接触电极层。

3. 发明授权

US07655569B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07655569B2
公开(公告)日：2010-02-02
申请号：US12020761
申请日：2008-01-28
申请人： Yuichi Inaba , Yutaka Yamada , Shigehiro Morikawa
发明人： Yuichi Inaba , Yutaka Yamada , Shigehiro Morikawa
IPC分类号： H01L21/311
CPC分类号： H01L27/115 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： The invention prevents a wiring layer in a memory region from being exposed to prevent a change in wire resistance and degradation of reliability. A SiO2 film as an etching stopper film which transmits ultraviolet light is formed on pad electrodes and an interlayer insulation film. Then, the SiO2 film on the pad electrodes is etched selectively and the SiO2 film in an EPROM region is left. A silicon nitride film and a polyimide film are then formed on the SiO2 film and on the pad electrodes where the SiO2 film is removed, as a protection film which does not transmit ultraviolet light. The silicon nitride film and the polyimide film on the pad electrodes and in the EPROM region are then selectively removed by etching. Since the SiO2 film functions as an etching stopper at this time, the interlayer insulation film under the SiO2 film is prevented from being etched and a control gate line metal layer is prevented from being exposed.
摘要翻译：本发明防止存储区域中的布线层暴露，以防止电线电阻的变化和可靠性的劣化。在焊盘电极和层间绝缘膜上形成作为透射紫外光的蚀刻停止膜的SiO 2膜。然后，选择性地蚀刻焊盘电极上的SiO 2膜，并且留下EPROM区域中的SiO 2膜。然后在SiO 2膜上除去SiO 2膜的焊盘电极上形成氮化硅膜和聚酰亚胺膜作为不透射紫外线的保护膜。然后通过蚀刻选择性地去除焊盘电极和EPROM区域中的氮化硅膜和聚酰亚胺膜。由于SiO 2膜此时用作蚀刻阻挡层，因此可以防止SiO 2膜下的层间绝缘膜被蚀刻，防止控制栅线金属层露出。

4. 发明申请

US20060164720A1 Multilayer interference filter, manufacturing method for multilayer interference filter, solid-state imaging device and camera 审中-公开
标题翻译：多层干涉滤波器，多层干涉滤波器的制造方法，固态成像装置和相机
公开(公告)号：US20060164720A1
公开(公告)日：2006-07-27
申请号：US11337599
申请日：2006-01-24
申请人： Shinji Yoshida , Yuichi Inaba , Masahiro Kasano
发明人： Shinji Yoshida , Yuichi Inaba , Masahiro Kasano
IPC分类号： F21V9/04
CPC分类号： G02B5/284 , G02B5/285 , H04N5/2254
摘要： A color filter is made from a silicon nitride, and has a multilayer structure including a silicon nitride layer and an airlayer. A multilayer film that selectively transmits green light has a seven-layer structure, in which two silicon nitride layers and one air layer is formed both above and below a spacer layer which is the air layer. On the other hand, each of a multilayer film that selectively transmits red light and a multilayer film that selectively transmits blue light has a silicon nitride layer as the spacer layer, and two silicon nitride layers and two air layers are formed both above and below the spacer layer. The silicon nitride layer is held by a holding part at a periphery thereof. Also, a hole is formed between multilayers for a manufacturing reason.
摘要翻译：滤色器由氮化硅制成，并且具有包括氮化硅层和空气层的多层结构。选择性地透过绿光的多层膜具有七层结构，其中在作为空气层的间隔层的上方和下方形成两个氮化硅层和一个空气层。另一方面，选择性地透过红光的多层膜和选择性透射蓝色光的多层膜中的每一层均具有氮化硅层作为间隔层，并且在上下形成两个氮化硅层和两个空气层间隔层。氮化硅层由其周围的保持部保持。此外，由于制造原因，在多层之间形成孔。

5. 发明授权

US06678299B1 Semiconductor laser apparatus 失效
标题翻译：半导体激光装置
公开(公告)号：US06678299B1
公开(公告)日：2004-01-13
申请号：US09587588
申请日：2000-06-02
申请人： Yuichi Inaba , Masahiro Kito
发明人： Yuichi Inaba , Masahiro Kito
IPC分类号： H01S522
CPC分类号： H01S5/227 , H01S5/06226 , H01S5/1064 , H01S5/12 , H01S5/1228 , H01S5/2022 , H01S5/2224 , H01S5/2275 , H01S5/3072
摘要： The semiconductor laser device according to the present invention includes: a semiconductor substrate; an active layer having a stripe structure formed on the semiconductor substrate; and a buried layer formed on the semiconductor substrate and in a vicinity of the active layer, the buried layer including Fe and Ti.
摘要翻译：根据本发明的半导体激光器件包括：半导体衬底; 具有形成在半导体衬底上的条纹结构的有源层; 以及形成在所述半导体衬底上并且在所述有源层附近的掩埋层，所述掩埋层包括Fe和Ti。

6. 发明授权

US07750354B2 Solid-state imaging device and manufacturing method for the same 有权
标题翻译：固态成像装置及其制造方法相同
公开(公告)号：US07750354B2
公开(公告)日：2010-07-06
申请号：US12187720
申请日：2008-08-07
申请人： Masahiro Kasano , Yuichi Inaba , Takumi Yamaguchi
发明人： Masahiro Kasano , Yuichi Inaba , Takumi Yamaguchi
IPC分类号： H01L29/20
CPC分类号： G02B5/201 , G01J3/513 , G02B5/285 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H01L31/02162 , H01L31/02164 , H01L31/02165
摘要： Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
摘要翻译：光电转换器被二维布置在半导体衬底中。在半导体基板和光电转换器上依次形成平坦化层，遮光膜，进一步的平坦化层和聚光透镜。遮光膜在对应于光电转换装置的位置处具有孔。透射光的红色，绿色或蓝色波长分量的多层干涉滤光片设置在孔中。

7. 发明授权

US07741724B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07741724B2
公开(公告)日：2010-06-22
申请号：US12060673
申请日：2008-04-01
申请人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
发明人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01082 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00
摘要： This invention is directed to offer a semiconductor device having a structure capable of relaxing a mechanical stress applied to a bonding pad. A third interlayer insulation film having via holes is formed on a second interlayer insulation film to cover a third wiring layer. A third conductive layer is formed in the via hole. The third interlayer insulation film is composed of an array of a plurality of hexagonal column-shaped interlayer insulation films. And the via hole and the third conductive layer are formed to surround each hexagonal column-shaped interlayer insulation film. A fourth wiring layer connected with the third wiring layer through the third conductive layer is formed. The fourth wiring layer makes an uppermost wiring layer in an embodiment of this invention and serves as the bonding pad.
摘要翻译：本发明旨在提供一种具有能够缓和施加到接合垫的机械应力的结构的半导体器件。具有通孔的第三层间绝缘膜形成在第二层间绝缘膜上以覆盖第三布线层。在通孔中形成第三导电层。第三层间绝缘膜由多个六边形柱状层间绝缘膜的阵列构成。并且通孔和第三导电层形成为围绕每个六边形柱状层间绝缘膜。形成通过第三导电层与第三布线层连接的第四布线层。第四布线层在本发明的实施例中形成最上层的布线层，并且用作接合焊盘。

8. 发明申请

US20080237877A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080237877A1
公开(公告)日：2008-10-02
申请号：US12060673
申请日：2008-04-01
申请人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
发明人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
IPC分类号： H01L23/538
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01082 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00
摘要： This invention is directed to offer a semiconductor device having a structure capable of relaxing a mechanical stress applied to a bonding pad. A third interlayer insulation film having via holes is formed on a second interlayer insulation film to cover a third wiring layer. A third conductive layer is formed in the via hole. The third interlayer insulation film is composed of an array of a plurality of hexagonal column-shaped interlayer insulation films. And the via hole and the third conductive layer are formed to surround each hexagonal column-shaped interlayer insulation film. A fourth wiring layer connected with the third wiring layer through the third conductive layer is formed. The fourth wiring layer makes an uppermost wiring layer in an embodiment of this invention and serves as the bonding pad.
摘要翻译：本发明旨在提供一种具有能够缓和施加到接合垫的机械应力的结构的半导体器件。具有通孔的第三层间绝缘膜形成在第二层间绝缘膜上以覆盖第三布线层。在通孔中形成第三导电层。第三层间绝缘膜由多个六边形柱状层间绝缘膜的阵列构成。并且通孔和第三导电层形成为围绕每个六边形柱状层间绝缘膜。形成通过第三导电层与第三布线层连接的第四布线层。第四布线层在本发明的实施例中形成最上层的布线层，并且用作接合焊盘。

9. 发明申请

US20070188635A1 Solid-state imaging device and camera 审中-公开
标题翻译：固态成像装置和相机
公开(公告)号：US20070188635A1
公开(公告)日：2007-08-16
申请号：US11633583
申请日：2006-12-05
申请人： Takumi Yamaguchi , Yuichi Inaba , Daisuke Ueda
发明人： Takumi Yamaguchi , Yuichi Inaba , Daisuke Ueda
IPC分类号： H04N9/04
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： A solid-state imaging device 101 is composed of a transparent film 204, a color filter 205, a planarizing film 207, and a plurality of microlenses 208 that are sequentially formed on a semiconductor substrate 201. A photodiode 202 is formed in a surface of the semiconductor substrate 201 that is closer to the transparent film 204. A light shielding film 203 is formed in a surface of the transparent film 204 that is closer to the semiconductor substrate 201. Color filters 205 respectively corresponding to two adjacent pixels are partitioned by a light shielding wall 206. The light shielding wall 206 is a λ/4 multilayer film that reflects visible light.
摘要翻译：固态成像装置101由依次形成在半导体基板201上的透明膜204，滤色器205，平坦化膜207和多个微透镜208构成。光电二极管202形成在更靠近透明膜204的半导体衬底201.在透明膜204的更靠近半导体衬底201的表面中形成遮光膜203.分别对应于两个相邻像素的滤色器205被分隔开遮光壁206.遮光壁206是反射可见光的λ/ 4多层膜。

10. 发明申请

US20060285005A1 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US20060285005A1
公开(公告)日：2006-12-21
申请号：US11452952
申请日：2006-06-15
申请人： Yuichi Inaba , Masahiro Kasano
发明人： Yuichi Inaba , Masahiro Kasano
IPC分类号： H04N5/225
CPC分类号： H04N5/335 , H01L27/14621 , H01L27/14625 , H04N9/045
摘要： A solid-state imaging device is composed of a P-type semiconductor layer, an interlayer insulation film, a multilayer interference filter and condenser lenses which have been successively laminated on an N-type semiconductor layer. A photodiode, in which N-type impurities have been ion-implanted, is formed per pixel in the P-type semiconductor layer on the interlayer insulation film side. The multilayer interference filter has a composition including λ/4 multilayer films and a plurality of spacer layers sandwiched therebetween. The λ/4 multilayer films are composed of alternately laminated monotitanium dioxide layers and monosilicon dioxide layers that have the same optical thickness. The spacer layers have optical thicknesses corresponding to colors of light they are to transmit. A spacer layer is not included in a green region. Instead, two monotitanium dioxide layers, each of which constitutes a λ/4 multilayer film, are adjoined to make a monotitanium dioxide layer with an optical thickness of λ/2.
摘要翻译：固态成像装置由已连续层叠在N型半导体层上的P型半导体层，层间绝缘膜，多层干涉滤光片和聚光透镜构成。在层间绝缘膜侧的P型半导体层中，每像素形成已经离子注入了N型杂质的光电二极管。多层干涉滤光器具有包括λ/ 4多层膜和夹在其间的多个间隔层的组成。 λ/ 4多层膜由具有相同光学厚度的交替层叠的单二氧化钛层和单二氧化硅层构成。间隔层具有对应于它们要发射的光的颜色的光学厚度。间隔层不包括在绿色区域中。相反，两个单一二氧化钛层（其各自构成λ/ 4多层膜）被邻接以制造光学厚度为λ/ 2的单二氧化钛层。

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