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1. 发明授权

US5951754A Method of fabricating semiconductor quantum box 失效
标题翻译：制造半导体量子盒的方法
公开(公告)号：US5951754A
公开(公告)日：1999-09-14
申请号：US932829
申请日：1997-09-18
申请人： Nobuyuki Koguchi , Keiko Ishige , Katsuyuki Watanabe , Chea Deak Lee
发明人： Nobuyuki Koguchi , Keiko Ishige , Katsuyuki Watanabe , Chea Deak Lee
IPC分类号： H01L21/306 , H01L21/20 , H01L21/203 , H01L21/338 , H01L29/778 , H01L29/812 , H01S5/00 , C30B19/00
CPC分类号： H01L29/0676 , B82Y10/00 , B82Y40/00 , H01L29/127 , H01L29/155
摘要： A method of fabricating a semiconductor quantum box uniform in size and free from processing damages comprising the steps of adsorbing elements classified in VI family of the periodic table onto the surface of a single or multi-quantum well structure composed of semiconductors; growing crystallites of a semiconductor or a metal by liquid-drop epitaxy; applying chemical etching to the single or multi-quantum well structure with the use of the crystallites as a mask, thereby removing areas of the single or multi-quantum well structure where the crystallites haven't grown on the surface; removing the crystallites used as mask by chemical etching; and filling a semiconductor into the areas of the single or multi-quantum well structure removed in the afore step.
摘要翻译：一种制造尺寸均匀且不受处理损伤的半导体量子箱的方法，包括将分为元素周期表VI族的元素吸附到由半导体构成的单个或多量子阱结构的表面上的步骤; 通过液滴外延生长半导体或金属的微晶; 使用微晶作为掩模对化学蚀刻施加到单量子阱或多量子阱结构，从而去除单晶或多量子阱结构中没有在表面上生长微晶的区域; 通过化学蚀刻除去用作掩模的微晶; 并将半导体填充到在前述步骤中去除的单量子阱结构或多量子阱结构的区域中。

2. 发明授权

US5132247A Quantum effective device and process for its production 失效
公开(公告)号：US5132247A
公开(公告)日：1992-07-21
申请号：US589921
申请日：1990-09-28
申请人： Toyohiro Chikyou , Sinya Hashimoto , Satoshi Takahashi , Nobuyuki Koguchi
发明人： Toyohiro Chikyou , Sinya Hashimoto , Satoshi Takahashi , Nobuyuki Koguchi
IPC分类号： H01L21/208 , H01L21/20 , H01L29/06 , H01S5/00 , H01S5/34
CPC分类号： B82Y20/00 , H01L21/02409 , H01L21/02411 , H01L21/02463 , H01L21/02513 , H01L21/02628 , H01L21/02661 , H01S5/341 , Y10S438/962
摘要： A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a first and a second elemental component and a semiconductor overlayer overlying said quantum well boxes and the surface portion of the exposed semiconductor substrate and wherein the quantum well boxes have an epitaxially grown single crystal structure obtained by depositing fine droplets of liquid phase composed of the first elemental component on the surface of the semiconductor substrate in the heated state and then incorporating a second elemental component different from the first elemental component in said droplets.

3. 发明授权

US06383286B1 Method of making semiconductor super-atom and aggregate thereof 失效
标题翻译：制造半导体超原子及其聚集体的方法
公开(公告)号：US06383286B1
公开(公告)日：2002-05-07
申请号：US09584092
申请日：2000-05-31
申请人： Nobuyuki Koguchi , Shiro Tsukamoto
发明人： Nobuyuki Koguchi , Shiro Tsukamoto
IPC分类号： C30B1310
CPC分类号： B82B3/00 , C30B7/00 , C30B29/605 , G01Q80/00 , H01L21/02601 , H01L21/02636 , H01L21/228 , H01L29/12 , Y10S977/749 , Y10S977/815 , Y10S977/819 , Y10S977/881
摘要： The present invention probides a novel method for fabricating a semiconductor super-atom and an aggregate thereof, which allows the formation of a semiconductor nano-structure with a diameter in the order of 10 nm, which is meant for constituting a core, and allows the doping of impurity atoms only to the core portion with the number of the impurity atoms being controlled. For example, droplet epitaxy is employed for the formation of the semiconductor nano-structure which constitutes the core, and scanning tunnel microscopy is employed for the doping of impurity atoms into the semiconductor nano-structure, so as to selectively introduce the impurity atoms only into the core, with the number of the impurity atoms controlled with a single-atom level accuracy
摘要翻译：本发明揭示了一种用于制造半导体超原子及其集合体的新方法，其允许形成直径为10nm的半导体纳米结构，其用于构成核心，并且允许仅将杂质原子掺杂到核心部分，其中杂质原子的数量被控制。例如，使用液滴外延形成构成芯的半导体纳米结构，并且使用扫描隧道显微镜将杂质原子掺杂到半导体纳米结构中，以便将杂质原子仅选择性地引入核心，以单原子级精度控制杂质原子数

4. 发明授权

US5134091A Quantum effective device and process for its production 失效
标题翻译：量子有效装置及其生产工艺
公开(公告)号：US5134091A
公开(公告)日：1992-07-28
申请号：US678434
申请日：1991-04-01
申请人： Toyohiro Chikyou , Sinya Hashimoto , Satoshi Takahashi , Nobuyuki Koguchi
发明人： Toyohiro Chikyou , Sinya Hashimoto , Satoshi Takahashi , Nobuyuki Koguchi
IPC分类号： H01L21/368 , H01S5/34 , H01S5/347
CPC分类号： B82Y20/00 , H01L21/02409 , H01L21/02411 , H01L21/02463 , H01L21/02513 , H01L21/02628 , H01L21/02661 , H01S5/3412 , H01S5/347 , Y10S438/962
摘要： A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a first and a second elemental component and a semiconductor overlayer overlying said quantum well boxes and the surface portion of the exposed semiconductor substrate and wherein the quantum well boxes have an epitaxially grown single crystal structure obtained by depositing fine droplets of liquid phase composed of the first elemental component on the surface of the semiconductor substrate in the heated state and then incorporating a second elemental component different from the first elemental component in said droplets.
摘要翻译：公开了一种量子有效装置及其制造方法，其中所述装置包括由半导体衬底和半导体衬底的表面上的化合物半导体构成的量子阱盒，该半导体衬底至少包括第一和第二元素组件和半导体覆层所述量子阱盒和暴露的半导体衬底的表面部分，并且其中量子阱盒具有外延生长的单晶结构，其通过在半导体衬底的表面上沉积由第一元素组分构成的液相的微小液滴而被加热然后加入与所述液滴中的第一元素成分不同的第二元素成分。

5. 发明授权

US4176370A Photovoltaic converter 失效
标题翻译：光伏转换器
公开(公告)号：US4176370A
公开(公告)日：1979-11-27
申请号：US880160
申请日：1978-02-22
申请人： Nobuyuki Koguchi , Katashi Masumoto
发明人： Nobuyuki Koguchi , Katashi Masumoto
IPC分类号： H01L31/04 , H01L21/365 , H01L31/032 , H01L31/072 , H01L31/109 , H01L27/14
CPC分类号： H01L31/032 , H01L31/072 , H01L31/109 , Y02E10/50
摘要： A photovoltaic converter, useful for example as a photodetector or solar cell, comprising a main unit consisting of a p-n heterojunction of a p- or n-type magnetic semiconductor MCr.sub.2 X.sub.4 in which M is Zn, Cd or Hg and X is O, S, Se or Te and an n- or p-type semiconductor M'In.sub.2 S.sub.4 in which M' is Zn, Cd or Hg and which has an optical absorption edge at a shorter wavelength than the optical absorption edge of the MCr.sub.2 X.sub.4 ; a first electrode ohmically fixed to the surface of the MCr.sub.2 X.sub.4 ; and a second electrode fixed ohmically to the surface of the M'In.sub.2 S.sub.4 and allowing light to reach the surface of M'In.sub.2 S.sub.4. With a decrease in temperature, the photovoltaic converter has the long wavelength edge of its spectral photovoltaic response shifted to a longer wavelength contrary to known photovoltaic converters.
摘要翻译：一种光电转换器，例如可用作光电检测器或太阳能电池，包括由p或n型磁性半导体MCr2X4的pn异质结组成的主单元，其中M是Zn，Cd或Hg，X是O，S， Se或Te以及其中M'是Zn，Cd或Hg并且具有比MCr2X4的光吸收边缘更短波长的光吸收边缘的n型或p型半导体M'In2S4; 欧姆固定在MCr2X4表面的第一电极; 以及第二电极，被固定在M'In2S4的表面上，并允许光到达M'In2S4的表面。随着温度的降低，与已知的光伏转换器相反，光伏转换器的光谱光伏响应的长波长边缘偏移到更长的波长。

6. 发明授权

US3986194A Magnetic semiconductor device 失效
标题翻译：磁性半导体器件
公开(公告)号：US3986194A
公开(公告)日：1976-10-12
申请号：US603628
申请日：1975-08-11
申请人： Katashi Masumoto , Nobuyuki Koguchi
发明人： Katashi Masumoto , Nobuyuki Koguchi
IPC分类号： H01F1/40 , C07C49/647 , H01S5/00 , H01S5/32 , H01S3/19 , H01L27/22 , H01L29/161
CPC分类号： H01S5/32 , C07C49/647
摘要： An injection-type laser light emitting semiconductor device comprising a main unit in the shape of a generally rectangular parallelepiped comprising a layer of a magnetic semiconductor for emitting laser light and at least one layer of semiconductor having the same crystal structure and substantially the same lattice constant as those of the magnetic semiconductor and also having a greater optical energy gap than that of the magnetic semiconductor, both end surface of the main unit perpendicular to the coalescing surface of the two layers serving as reflecting plates for the emission of laser light, and a pair of electrodes fixed ohmically to the under surface and top surface of the main unit. This device affords laser light whose wavelength varies over a relatively wide range according to changes in the oprical energy gap of the magnetic semiconductor as a result of changing the temperature and/or applied magnetic field.
摘要翻译：一种注射式激光发射半导体器件，包括大致长方体形状的主单元，其包括用于发射激光的磁性半导体层和至少一层具有相同晶体结构和基本相同的晶格常数的半导体与磁性半导体相比，具有比磁性半导体更大的光能隙的主要单元的两端的表面垂直于用作发射激光的反射板的两层的聚结表面的端面，以及一对电极固定在主体的下表面和顶面上。该装置根据温度和/或施加的磁场的变化，提供根据磁性半导体的能量间隙的变化在相对宽的范围内波长变化的激光。

7. 发明授权

US6074485A Crystal growth observing apparatus using a scanning tunneling microscope 失效
标题翻译：使用扫描隧道显微镜的晶体生长观测装置
公开(公告)号：US6074485A
公开(公告)日：2000-06-13
申请号：US206976
申请日：1998-12-08
申请人： Shiro Tsukamoto , Nobuyuki Koguchi
发明人： Shiro Tsukamoto , Nobuyuki Koguchi
IPC分类号： G01N37/00 , B05C11/00 , C30B23/02 , C30B23/08 , G01N27/00 , G01Q30/18 , G01Q30/20 , G01Q60/10 , G01Q80/00 , H01L21/203
CPC分类号： G01Q60/16 , B82Y35/00 , C30B23/02 , G01Q30/02 , Y10S977/852 , Y10T117/1004
摘要： A STM drive mechanism capable of moving a scanning tunneling microscope (STM) incorporated with a molecular beam epitaxy (MBE) device in the MBE device under vacuum and a substrate holder with a wide clearance formed between a substrate heating system and the substrate holder are provided. The STM is protected by a heat insulating shield from high vapor pressure atmosphere and radiant heat according to substrate heating.
摘要翻译：提供了一种STM驱动机构，其能够在真空下移动在MBE器件中并入分子束外延（MBE）器件的扫描隧道显微镜（STM）和在衬底加热系统和衬底保持器之间形成的具有宽间隙的衬底保持器。 STM通过绝热屏蔽而受到高蒸汽压力气氛和辐射热的保护，根据基板加热。

8. 发明授权

US5748360A Decelerating and focusing ion beam device 失效
标题翻译：减速和聚焦离子束装置
公开(公告)号：US5748360A
公开(公告)日：1998-05-05
申请号：US610232
申请日：1996-03-04
申请人： Toyohiro Chikyou , Nobuyuki Koguchi
发明人： Toyohiro Chikyou , Nobuyuki Koguchi
IPC分类号： H01J37/04 , H01J37/30 , H01J37/317 , G02B26/08 , G01K1/08
CPC分类号： H01J37/3007 , H01J2237/0475 , H01J2237/0492 , H01J2237/31732 , H01J2237/3174
摘要： A decelerating and focusing ion beam device is provided with an ion source, a focusing lens system having a plurality of focusing lenses and a multiple decelerating lens system having a plurality of decelerating lenses. It is possible to realize selective super-refined crystal growth and superficial etching with very high accuracy.
摘要翻译：减速聚焦离子束装置设置有离子源，具有多个聚焦透镜的聚焦透镜系统和具有多个减速透镜的多重减速透镜系统。可以以非常高的精度实现选择性超精细晶体生长和表面蚀刻。

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