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    • 1. 发明授权
    • Photovoltaic converter
    • 光伏转换器
    • US4176370A
    • 1979-11-27
    • US880160
    • 1978-02-22
    • Nobuyuki KoguchiKatashi Masumoto
    • Nobuyuki KoguchiKatashi Masumoto
    • H01L31/04H01L21/365H01L31/032H01L31/072H01L31/109H01L27/14
    • H01L31/032H01L31/072H01L31/109Y02E10/50
    • A photovoltaic converter, useful for example as a photodetector or solar cell, comprising a main unit consisting of a p-n heterojunction of a p- or n-type magnetic semiconductor MCr.sub.2 X.sub.4 in which M is Zn, Cd or Hg and X is O, S, Se or Te and an n- or p-type semiconductor M'In.sub.2 S.sub.4 in which M' is Zn, Cd or Hg and which has an optical absorption edge at a shorter wavelength than the optical absorption edge of the MCr.sub.2 X.sub.4 ; a first electrode ohmically fixed to the surface of the MCr.sub.2 X.sub.4 ; and a second electrode fixed ohmically to the surface of the M'In.sub.2 S.sub.4 and allowing light to reach the surface of M'In.sub.2 S.sub.4. With a decrease in temperature, the photovoltaic converter has the long wavelength edge of its spectral photovoltaic response shifted to a longer wavelength contrary to known photovoltaic converters.
    • 一种光电转换器,例如可用作光电检测器或太阳能电池,包括由p或n型磁性半导体MCr2X4的pn异质结组成的主单元,其中M是Zn,Cd或Hg,X是O,S, Se或Te以及其中M'是Zn,Cd或Hg并且具有比MCr2X4的光吸收边缘更短波长的光吸收边缘的n型或p型半导体M'In2S4; 欧姆固定在MCr2X4表面的第一电极; 以及第二电极,被固定在M'In2S4的表面上,并允许光到达M'In2S4的表面。 随着温度的降低,与已知的光伏转换器相反,光伏转换器的光谱光伏响应的长波长边缘偏移到更长的波长。
    • 2. 发明授权
    • Magnetic semiconductor device
    • 磁性半导体器件
    • US3986194A
    • 1976-10-12
    • US603628
    • 1975-08-11
    • Katashi MasumotoNobuyuki Koguchi
    • Katashi MasumotoNobuyuki Koguchi
    • H01F1/40C07C49/647H01S5/00H01S5/32H01S3/19H01L27/22H01L29/161
    • H01S5/32C07C49/647
    • An injection-type laser light emitting semiconductor device comprising a main unit in the shape of a generally rectangular parallelepiped comprising a layer of a magnetic semiconductor for emitting laser light and at least one layer of semiconductor having the same crystal structure and substantially the same lattice constant as those of the magnetic semiconductor and also having a greater optical energy gap than that of the magnetic semiconductor, both end surface of the main unit perpendicular to the coalescing surface of the two layers serving as reflecting plates for the emission of laser light, and a pair of electrodes fixed ohmically to the under surface and top surface of the main unit. This device affords laser light whose wavelength varies over a relatively wide range according to changes in the oprical energy gap of the magnetic semiconductor as a result of changing the temperature and/or applied magnetic field.
    • 一种注射式激光发射半导体器件,包括大致长方体形状的主单元,其包括用于发射激光的磁性半导体层和至少一层具有相同晶体结构和基本相同的晶格常数的半导体 与磁性半导体相比,具有比磁性半导体更大的光能隙的主要单元的两端的表面垂直于用作发射激光的反射板的两层的聚结表面的端面,以及 一对电极固定在主体的下表面和顶面上。 该装置根据温度和/或施加的磁场的变化,提供根据磁性半导体的能量间隙的变化在相对宽的范围内波长变化的激光。
    • 4. 发明授权
    • Electrical resistant alloy having a high temperature coefficient of
resistance
    • 具有高耐电阻系数的电阻合金
    • US5849113A
    • 1998-12-15
    • US720064
    • 1996-09-27
    • Yuetsu MurakamiKatashi MasumotoNaoji Nakamura
    • Yuetsu MurakamiKatashi MasumotoNaoji Nakamura
    • H01C3/04H01C7/06C22C5/00C22C38/00
    • H01C7/06H01C3/04
    • High temperature coefficient of resistance (TCR) appropriate for the sensorevices is attained by an alloy consisting, by atomic %, of from 5 to 65% of Fe, and from 0.01 to 20% in total of at least one auxiliary component selected from the group consisting of 20% or less of Ni, 20% or less of Co, 20% or less of Ag, 20% or less of Au, 20% or less of Pt, 10% or less of Rh, 10% or less of Ir, 10% or less of Os, 10% or less of Ru, 10% or less of Cr, 5% or less of V, 5% or less of Ti, 5% or less of Zr, 5% or less of Hf, 8% or less of Mo, 5% or less of Nb, 10% or less of W, 8% or less of Ta, 3% or less of Ga, 3% or less of Ge, 3% or less of In, 3% or less of Be, 5% or less of Sn, 3% or less of Sb, 5% or less of Cu, 5% or less of Al, 5% or less of Si, 2% or less of C, 2% or less of B, and 5% or less of a rare earth element, the balance being essentially Pd and minor amount of impurities, and said alloy having 4000.times.10.sup.-6.degree. C..sup.-1 or more of TCR in a temperature range of from 0.degree. to 200.degree. C. The alloy may further contain from 5 to 65% of Mn.
    • 适用于传感器装置的高温电阻系数(TCR)是通过以5%〜65%Fe为原子%,以总计0.01%〜20%的至少1种辅助成分 由20%以下的Ni,20%以下的Co,20%以下的Ag,20%以下的Au,20%以下的Pt,10%以下的Rh,10%以下的Ni Ir,10%以下的Os,10%以下的Ru,10%以下的Cr,5%以下的V,5%以下的Ti,5%以下的Zr,5%以下的Hf ,8%以下的Mo,5%以下的Nb,10%以下的W,8%以下的Ta,3%以下的Ga,3%以下的Ge,3%以下的In, 3%以下的Sn,5%以下的Sn,3%以下的Sb,5%以下的Cu,5%以下的Al,5%以下的Si,2%以下的C,2 B%以下,5%以下的稀土元素,余量基本上为Pd和少量杂质,所述合金在温度范围为4000×10 -6〜-1以上的TCR 0〜200℃ 该合金还可含有5〜65%的Mn。
    • 8. 发明授权
    • Wear-resistant high permability alloy and method of manufacturing the
same and magnetic recording and reproducing head
    • 耐磨高倍率合金及其制造方法及磁记录头
    • US5725687A
    • 1998-03-10
    • US550502
    • 1995-10-30
    • Yuetsu MurakamiKatashi Masumoto
    • Yuetsu MurakamiKatashi Masumoto
    • C22C19/03C22F1/10G11B5/127G11B5/147G11B5/255H01F1/147H01F1/00
    • H01F1/14708C22C19/03C22F1/10G11B5/147
    • The present invention relates to a wear-resistant high permeability alloy nsisting of Ni, Nb, C and Fe, a wear-resistant high permeability alloy consisting of Ni, Nb, C and Fe as main components and at least one element selected from the group consisting of Cr, Mo, Ge, Au, Co, V, W, Cu, Ta, Mn, Al, Si, Ti, Zr, Hf, Sn, Sb, Ga, In, Tl, Zn, Cd, rare earth element, platinum element, Be, Ag, Sr, B, P, N, O, S as a secondary component and a method of manufacturing the same and a magnetic recording and reproducing head, and an object of the invention is to obtain an excellent wear-resistant magnetic alloy having easy forging processability, a large effective permeability, a saturated flux density of more than 4000G, and a recrystallization texture of {110} +{311} +{111} , and a wear-resistant high permeability alloy consisting by weight of Ni 60-90%, Nb 0.5-14%, C 0.0003-0.7% and the remainder Fe and a small amount of impurities, and having a recrystallization texture of {110} +{311} +{111} with an effective permeability of more than 3000 at 1 KHz and a saturated flux density of more than 4000G.
    • 本发明涉及由Ni,Nb,C和Fe组成的耐磨高渗性合金,由Ni,Nb,C和Fe作为主要成分的耐磨高渗性合金和选自组中的至少一种元素 由Cr,Mo,Ge,Au,Co,V,W,Cu,Ta,Mn,Al,Si,Ti,Zr,Hf,Sn,Sb,Ga,In,Tl,Zn,Cd,稀土元素, 作为次要成分的铂元素Be,Ag,Sr,B,P,N,O,S及其制造方法和磁记录再现头,其目的是获得优异的耐磨性, 具有容易的锻造加工性,大的有效磁导率,4000G以上的饱和磁通密度和{110} + 112 + {311} + 112 + {111} <112>的再结晶织构, 耐磨高渗性合金,其重量为Ni 60-90%,Nb 0.5-14%,C 0.0003-0.7%,余量为Fe和少量杂质,重结晶组织为{110} <1 12> + {311} <112> + {111} <112>,1KHz时的有效磁导率大于3000,饱和磁通密度大于4000G。