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1. 发明申请

US20100127423A1 FERRITE POWDER AND ITS PRODUCTION METHOD 有权
标题翻译：粉砂粉及其生产方法
公开(公告)号：US20100127423A1
公开(公告)日：2010-05-27
申请号：US12607207
申请日：2009-10-28
申请人： Nobuyuki Kobayashi , Shuichi Ozawa , Kei Sato
发明人： Nobuyuki Kobayashi , Shuichi Ozawa , Kei Sato
IPC分类号： B29C39/18 , C04B35/30
CPC分类号： C01G49/0018 , C01G49/0063 , C01P2002/32 , C01P2002/72 , C01P2004/62 , C01P2006/12 , C01P2006/42 , C04B35/265 , C04B35/6263 , C04B35/62675 , C04B35/632 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/6023 , C04B2235/6562 , C04B2235/6565 , C04B2235/763 , H01F1/344 , H01F1/36 , H01F41/0246
摘要： On producing a ferrite sintered body, there is used a ferrite powder having a median diameter D50 [μm] in a range from 0.1 to 0.8 μm, a degree of spinel formation in a range from 45 to 90%, and a remanent magnetization Br per unit mass [emu/g] satisfying the following formula after application of the maximum magnetic field of 15 kOe:_0.05≦Br≦2.0(ln.D50)+6.3. The above ferrite powder allows producing a homogeneous ferrite sintered body generating very few cracks by gel casting.
摘要翻译：在制造铁氧体烧结体时，使用中值粒径D50 [μm]为0.1〜0.8μm的铁素体粉末，尖晶石形成程度为45〜90％，剩余磁化强度Br为单位质量[emu / g]在施加15kOe的最大磁场后满足下列公式：_0.05＆nlE; Br＆nlE; 2.0（ln.D50）+6.3。上述铁氧体粉末可以制造通过凝胶铸造产生非常少的裂纹的均匀的铁氧体烧结体。

2. 发明授权

US08343375B2 Ferrite powder and its production method 有权
标题翻译：铁氧体粉及其制作方法
公开(公告)号：US08343375B2
公开(公告)日：2013-01-01
申请号：US12607207
申请日：2009-10-28
申请人： Nobuyuki Kobayashi , Shuichi Ozawa , Kei Sato
发明人： Nobuyuki Kobayashi , Shuichi Ozawa , Kei Sato
IPC分类号： H01F17/00 , H01F41/04 , C04B35/26
CPC分类号： C01G49/0018 , C01G49/0063 , C01P2002/32 , C01P2002/72 , C01P2004/62 , C01P2006/12 , C01P2006/42 , C04B35/265 , C04B35/6263 , C04B35/62675 , C04B35/632 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/6023 , C04B2235/6562 , C04B2235/6565 , C04B2235/763 , H01F1/344 , H01F1/36 , H01F41/0246
摘要： A ferrite powder for producing a ferrite sintered body is provided, the ferrite powder having a median diameter D50 [μm] in a range from 0.1 to 0.8 μm, a degree of spinel formation in a range from 45 to 90%, and a remanent magnetization Br per unit mass [emu/g] satisfying the following formula after application of the maximum magnetic field of 15 kOe: 0.05≦Br≦2.0(ln.D50)+6.3. This ferrite powder produces a homogeneous ferrite sintered body having very few cracks by gel casting.
摘要翻译：提供了一种用于制造铁氧体烧结体的铁氧体粉末，铁氧体粉末的中值粒径D50 [μm]在0.1-0.8μm的范围内，尖晶石形成程度在45-90％的范围内，剩余磁化强度 Br / nlE; 2.0（ln.D50）+6.3的最大磁场施加15kOe后的单位质量[emu / g]满足下式。该铁氧体粉末通过凝胶铸造产生非常少的裂纹的均匀的铁氧体烧结体。

3. 发明申请

US20070188069A1 ELECTRON EMITTER 有权
标题翻译：电子发射器
公开(公告)号：US20070188069A1
公开(公告)日：2007-08-16
申请号：US11673769
申请日：2007-02-12
申请人： Kei Sato , Tetsuya Hattori , Hirofumi Yamaguchi , Shuichi Ozawa
发明人： Kei Sato , Tetsuya Hattori , Hirofumi Yamaguchi , Shuichi Ozawa
IPC分类号： H01J1/00
CPC分类号： H01J1/312 , B82Y10/00 , H01J1/30 , H01J2201/306 , H01J2201/312
摘要： Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.
摘要翻译：提供了一种具有高耐久性的压电薄膜型电子发射体，其显示出抑制电子发射量的减少，但是通过反复使用电子发射器将会发生减小。电子发射器包括衬底，下电极，发射极层和上电极。上电极具有多个开口，并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时，电子在发射极部分积聚，然后电子朝向减压气氛发射。发射极层包含主要组分（即铁电组合物）和附加组分。附加成分含有高氧化数的过渡金属氧化物，其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。

4. 发明授权

US07576479B2 Electron emitter 有权
标题翻译：电子发射体
公开(公告)号：US07576479B2
公开(公告)日：2009-08-18
申请号：US11673769
申请日：2007-02-12
申请人： Kei Sato , Tetsuya Hattori , Hirofumi Yamaguchi , Shuichi Ozawa
发明人： Kei Sato , Tetsuya Hattori , Hirofumi Yamaguchi , Shuichi Ozawa
IPC分类号： H01J1/14 , H01J1/05
CPC分类号： H01J1/312 , B82Y10/00 , H01J1/30 , H01J2201/306 , H01J2201/312
摘要： Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.
摘要翻译：提供了一种具有高耐久性的压电薄膜型电子发射体，其显示出抑制电子发射量的减少，但是通过反复使用电子发射器将会发生减小。电子发射器包括衬底，下电极，发射极层和上电极。上电极具有多个开口，并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时，电子在发射极部分积聚，然后电子朝向减压气氛发射。发射极层包含主要组分（即铁电组合物）和附加组分。附加成分含有高氧化数的过渡金属氧化物，其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。

5. 发明申请

US20080199730A1 DIELECTRIC DEVICE AND ITS MANUFACTURING METHOD 有权
公开(公告)号：US20080199730A1
公开(公告)日：2008-08-21
申请号：US11961142
申请日：2007-12-20
申请人： Kei Sato , Nobuyuki Kobayashi , Tsutomu Nanataki
发明人： Kei Sato , Nobuyuki Kobayashi , Tsutomu Nanataki
IPC分类号： B32B9/00 , B05D5/00
CPC分类号： H01L21/31691 , C01G9/006 , C01P2002/84 , C01P2002/85 , C04B35/493 , C04B35/62675 , C04B2235/3255 , C04B2235/3284 , C04B2235/3287 , C04B2235/3298 , C04B2235/365 , H01L21/02175 , H01L21/02197 , H01L28/55
摘要： A manufacturing method of a dielectric device includes steps described below. (1) Mixing step: Powders serving as a matrix and additive powders for sintering the matrix are mixed. (2) Mixture heat-treating step: The mixture of the matrix and the additive that has been subject to the mixing step is heat-treated. (3) Deposition layer formation step: The material powders obtained through the mixture heat-treating step are injected toward a substrate so as to form a deposition layer on the substrate. (4) Deposition layer heat-treating step: The deposition layer formed on the substrate through the deposition layer formation step is heat-treated so as to form the dielectric layer on the substrate.

6. 发明授权

US07528539B2 Electron emitter and method of fabricating electron emitter 有权
标题翻译：电子发射体和制造电子发射体的方法
公开(公告)号：US07528539B2
公开(公告)日：2009-05-05
申请号：US11145004
申请日：2005-06-02
申请人： Iwao Ohwada , Kei Sato , Nobuyuki Kobayashi , Shohei Yokoyama
发明人： Iwao Ohwada , Kei Sato , Nobuyuki Kobayashi , Shohei Yokoyama
IPC分类号： H01J1/46
CPC分类号： H01J1/32 , B82Y10/00 , H01J1/312 , H01J9/022
摘要： An electron emitter includes an emitter layer formed of a dielectric material, an upper electrode, and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode, for emitting electrons. The upper electrode is formed of scale-like conductive particles on the upper surface of the emitter layer and has a plurality of opening portions. The surfaces of overhanging portions of the opening portions that face the emitter layer are apart from the emitter layer. The overhanging portions each have such a cross-sectional shape as to be acutely pointed toward the inner edge of the opening portion, or the tip end of the overhanging portion, so that lines of electric force concentrate at the inner edge.
摘要翻译：电子发射器包括由电介质材料，上电极和下电极形成的发射极层。在上电极和下电极之间施加驱动电压以发射电子。上电极由发射极层的上表面上的鳞状导电粒子形成，具有多个开口部。面向发射极层的开口部分的突出部分的表面与发射极层分开。突出部分各自具有尖锐地指向开口部分的内边缘或突出部分的尖端的横截面形状，使得电力线集中在内边缘处。

7. 发明申请

US20050269929A1 Electron emitter and method of fabricating electron emitter 有权
标题翻译：电子发射体和制造电子发射体的方法
公开(公告)号：US20050269929A1
公开(公告)日：2005-12-08
申请号：US11145004
申请日：2005-06-02
申请人： Iwao Ohwada , Kei Sato , Nobuyuki Kobayashi , Shohei Yokoyama
发明人： Iwao Ohwada , Kei Sato , Nobuyuki Kobayashi , Shohei Yokoyama
IPC分类号： H01J1/00 , H01J1/02 , H01J1/14 , H01J1/312 , H01J1/32 , H01J9/02
CPC分类号： H01J1/32 , B82Y10/00 , H01J1/312 , H01J9/022
摘要： An electron emitter includes an emitter layer formed of a dielectric material, an upper electrode, and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode, for emitting electrons. The upper electrode is formed of scale-like conductive particles on the upper surface of the emitter layer and has a plurality of opening portions. The surfaces of overhanging portions of the opening portions that face the emitter layer are apart from the emitter layer. The overhanging portions each have such a cross-sectional shape as to be acutely pointed toward the inner edge of the opening portion, or the tip end of the overhanging portion, so that lines of electric force concentrate at the inner edge.
摘要翻译：电子发射器包括由电介质材料，上电极和下电极形成的发射极层。在上电极和下电极之间施加驱动电压以发射电子。上电极由发射极层的上表面上的鳞状导电粒子形成，具有多个开口部。面向发射极层的开口部分的突出部分的表面与发射极层分开。突出部分各自具有尖锐地指向开口部分的内边缘或突出部分的尖端的横截面形状，使得电力线集中在内边缘处。

8. 发明授权

US07727585B2 Dielectric device and its manufacturing method 有权
公开(公告)号：US07727585B2
公开(公告)日：2010-06-01
申请号：US11961218
申请日：2007-12-20
申请人： Kei Sato , Nobuyuki Kobayashi , Tsutomu Nanataki
发明人： Kei Sato , Nobuyuki Kobayashi , Tsutomu Nanataki
IPC分类号： B05D1/12
CPC分类号： C03C3/0745 , C03C8/10 , C03C8/14 , C03C17/04 , H01G4/1209 , H01G4/129 , H01G4/33 , H01L21/02175 , H01L21/02197 , H01L21/31691 , H01L28/40 , H01L41/43 , Y10T29/42
摘要： A manufacturing method of a dielectric device includes steps described below. (1) Mixing step: Powders serving as a matrix and additive powders for sintering the matrix are mixed. (2) Mixture heat-treating step: The mixture of the matrix and the additive that has been subject to the mixing step is heat-treated. (3) Deposition layer formation step: The material powders obtained through the mixture heat-treating step are injected toward a substrate so as to form a deposition layer on the substrate. (4) Deposition layer heat-treating step: The deposition layer formed on the substrate through the deposition layer formation step is heat-treated so as to form the dielectric layer on the substrate.

9. 发明申请

US20080196227A1 DIELECTRIC DEVICE AND ITS MANUFACTURING METHOD 有权
标题翻译：电介质器件及其制造方法
公开(公告)号：US20080196227A1
公开(公告)日：2008-08-21
申请号：US11961218
申请日：2007-12-20
申请人： Kei Sato , Nobuyuki Kobayashi , Tsutomu Nanataki
发明人： Kei Sato , Nobuyuki Kobayashi , Tsutomu Nanataki
IPC分类号： H01L41/22
CPC分类号： C03C3/0745 , C03C8/10 , C03C8/14 , C03C17/04 , H01G4/1209 , H01G4/129 , H01G4/33 , H01L21/02175 , H01L21/02197 , H01L21/31691 , H01L28/40 , H01L41/43 , Y10T29/42
摘要： A manufacturing method of a dielectric device includes steps described below. (1) Mixing step: Powders serving as a matrix and additive powders for sintering the matrix are mixed. (2) Mixture heat-treating step: The mixture of the matrix and the additive that has been subject to the mixing step is heat-treated. (3) Deposition layer formation step: The material powders obtained through the mixture heat-treating step are injected toward a substrate so as to form a deposition layer on the substrate. (4) Deposition layer heat-treating step: The deposition layer formed on the substrate through the deposition layer formation step is heat-treated so as to form the dielectric layer on the substrate.
摘要翻译：电介质器件的制造方法包括下述步骤。（1）混合工序：将作为基质的粉末和烧结基质的添加剂粉末混合。（2）混合热处理工序：将经过混合工序的基质和添加剂的混合物进行热处理。（3）沉积层形成步骤将通过混合物热处理步骤获得的材料粉末注入基板，以在基板上形成沉积层。（4）沉积层热处理工序：通过沉积层形成工序在基板上形成的沉积层进行热处理，以在基板上形成电介质层。

10. 发明授权

US07727584B2 Dielectric device and its manufacturing method 有权
标题翻译：介电器件及其制造方法
公开(公告)号：US07727584B2
公开(公告)日：2010-06-01
申请号：US11961142
申请日：2007-12-20
申请人： Kei Sato , Nobuyuki Kobayashi , Tsutomu Nanataki
发明人： Kei Sato , Nobuyuki Kobayashi , Tsutomu Nanataki
IPC分类号： B05D1/12
CPC分类号： H01L21/31691 , C01G9/006 , C01P2002/84 , C01P2002/85 , C04B35/493 , C04B35/62675 , C04B2235/3255 , C04B2235/3284 , C04B2235/3287 , C04B2235/3298 , C04B2235/365 , H01L21/02175 , H01L21/02197 , H01L28/55
摘要： A manufacturing method of a dielectric device includes steps described below. (1) Mixing step: Powders serving as a matrix and additive powders for sintering the matrix are mixed. (2) Mixture heat-treating step: The mixture of the matrix and the additive that has been subject to the mixing step is heat-treated. (3) Deposition layer formation step: The material powders obtained through the mixture heat-treating step are injected toward a substrate so as to form a deposition layer on the substrate. (4) Deposition layer heat-treating step: The deposition layer formed on the substrate through the deposition layer formation step is heat-treated so as to form the dielectric layer on the substrate.
摘要翻译：电介质器件的制造方法包括下述步骤。（1）混合工序：将作为基质的粉末和烧结基质的添加剂粉末混合。（2）混合热处理工序：将经过混合工序的基质和添加剂的混合物进行热处理。（3）沉积层形成步骤将通过混合物热处理步骤获得的材料粉末注入基板，以在基板上形成沉积层。（4）沉积层热处理工序：通过沉积层形成工序在基板上形成的沉积层进行热处理，以在基板上形成电介质层。

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