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    • 1. 发明授权
    • Magnetic memory element and magnetic memory
    • 磁存储元件和磁存储器
    • US08994130B2
    • 2015-03-31
    • US13145082
    • 2010-01-28
    • Shunsuke FukamiTetsuhiro SuzukiKiyokazu NagaharaNobuyuki IshiwataNorikazu Ohshima
    • Shunsuke FukamiTetsuhiro SuzukiKiyokazu NagaharaNobuyuki IshiwataNorikazu Ohshima
    • H01L27/22G11C11/16H01L43/08
    • G11C11/16G11C11/161G11C11/1655G11C11/1659G11C11/1673G11C11/1675H01L27/228H01L43/08
    • A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
    • 磁存储元件包括:由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层,设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。 第一磁化自由层包括:磁化固定的第一磁化固定区域,固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域, 并且其中可以切换磁化。 第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。 第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。
    • 3. 发明授权
    • Magnetic memory element and magnetic memory
    • 磁存储元件和磁存储器
    • US08514616B2
    • 2013-08-20
    • US13201815
    • 2010-02-15
    • Nobuyuki IshiwataNorikazu OhshimaShunsuke FukamiKiyokazu NagaharaTetsuhiro Suzuki
    • Nobuyuki IshiwataNorikazu OhshimaShunsuke FukamiKiyokazu NagaharaTetsuhiro Suzuki
    • G11C11/14
    • H01L27/228G11C11/16G11C11/161G11C11/1655G11C11/1659G11C11/1675H01L43/08
    • A magnetoresistive effect element includes: a magnetization free layer; a non-magnetic insertion layer provided adjacent to the magnetization free layer; a magnetic insertion layer provided adjacent to the non-magnetic insertion layer and opposite to the magnetization free layer with respect to the non-magnetic insertion layer; a spacer layer provided adjacent to the magnetic insertion layer and opposite to the non-magnetic insertion layer with respect to the magnetic insertion layer; and a first magnetization fixed layer provided adjacent to the spacer layer and opposite to the magnetic insertion layer with respect to the spacer layer. The magnetization free layer and the first magnetization fixed layer have magnetization components in directions approximately perpendicular to a film surface. The magnetization free layer includes two magnetization fixed portions and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetization of one of the two magnetization fixed portions and magnetization of the other of the two magnetization fixed portions are fixed approximately anti-parallel to each other in a direction approximately perpendicular to a film surface. The domain wall motion portion has a magnetic anisotropy in a direction perpendicular to a film surface.
    • 磁阻效应元件包括:无磁化层; 与磁化自由层相邻设置的非磁性插入层; 设置在非磁性插入层附近并相对于非磁性插入层与无磁化层相反的磁性插入层; 与磁性插入层相邻地设置并与非磁性插入层相对于磁性插入层相对设置的间隔层; 以及第一磁化固定层,其相对于间隔层设置成与间隔层相邻并且与磁性插入层相对。 磁化自由层和第一磁化固定层在大致垂直于膜表面的方向上具有磁化分量。 磁化自由层包括两个磁化固定部分和布置在两个磁化固定部分之间的畴壁运动部分。 两个磁化固定部分中的一个的磁化和两个磁化固定部分中的另一个的磁化被固定为大致垂直于膜表面的方向彼此大致反平行。 畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。
    • 6. 发明申请
    • MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
    • 磁记忆元件和磁记忆
    • US20110298067A1
    • 2011-12-08
    • US13201815
    • 2010-02-15
    • Nobuyuki IshiwataNorikazu OhshimaShunsuke FukamiKiyokazu NagaharaTetsuhiro Suzuki
    • Nobuyuki IshiwataNorikazu OhshimaShunsuke FukamiKiyokazu NagaharaTetsuhiro Suzuki
    • H01L27/22H01L43/02
    • H01L27/228G11C11/16G11C11/161G11C11/1655G11C11/1659G11C11/1675H01L43/08
    • A magnetoresistive effect element includes: a magnetization free layer; a non-magnetic insertion layer provided adjacent to the magnetization free layer; a magnetic insertion layer provided adjacent to the non-magnetic insertion layer and opposite to the magnetization free layer with respect to the non-magnetic insertion layer; a spacer layer provided adjacent to the magnetic insertion layer and opposite to the non-magnetic insertion layer with respect to the magnetic insertion layer; and a first magnetization fixed layer provided adjacent to the spacer layer and opposite to the magnetic insertion layer with respect to the spacer layer. The magnetization free layer and the first magnetization fixed layer have magnetization components in directions approximately perpendicular to a film surface. The magnetization free layer includes two magnetization fixed portions and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetization of one of the two magnetization fixed portions and magnetization of the other of the two magnetization fixed portions are fixed approximately anti-parallel to each other in a direction approximately perpendicular to a film surface. The domain wall motion portion has a magnetic anisotropy in a direction perpendicular to a film surface.
    • 磁阻效应元件包括:无磁化层; 与磁化自由层相邻设置的非磁性插入层; 设置在非磁性插入层附近并相对于非磁性插入层与无磁化层相反的磁性插入层; 与磁性插入层相邻地设置并与非磁性插入层相对于磁性插入层相对设置的间隔层; 以及第一磁化固定层,其相对于间隔层设置成与间隔层相邻并且与磁性插入层相对。 磁化自由层和第一磁化固定层在大致垂直于膜表面的方向上具有磁化分量。 磁化自由层包括两个磁化固定部分和布置在两个磁化固定部分之间的畴壁运动部分。 两个磁化固定部分中的一个的磁化和两个磁化固定部分中的另一个的磁化被固定为大致垂直于膜表面的方向彼此大致反平行。 畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。
    • 7. 发明申请
    • MAGNETORESISTIVE ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY
    • 磁电元件和磁性随机存取存储器
    • US20100237449A1
    • 2010-09-23
    • US12739990
    • 2008-10-28
    • Shunsuke FukamiNobuyuki IshiwataTetsuhiro SuzukiKiyokazu NagaharaNorikazu Ohshima
    • Shunsuke FukamiNobuyuki IshiwataTetsuhiro SuzukiKiyokazu NagaharaNorikazu Ohshima
    • H01L29/82
    • H01L43/08G11C11/161G11C11/1655G11C11/1657G11C11/1659G11C11/1673G11C11/1675G11C19/0808H01L27/228
    • A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction.
    • 磁阻元件设置有第一磁化自由层; 第二磁化自由层; 邻近所述第二磁化自由层设置的非磁性层; 以及在所述第二磁化自由层的相对侧上邻近所述第二磁化自由层设置的第一磁化固定层。 第一磁化自由层由铁磁材料形成,并且在厚度方向上具有磁各向异性。 另一方面,第二磁化自由层和第一磁化固定层由铁磁材料形成,并且在面内方向上具有磁各向异性。 第一磁化自由层包括:具有固定磁化强度的第一磁化固定区; 具有固定磁化强度的第二磁化固定区域; 以及与第一和第二磁化固定区域连接并具有可逆磁化强度的无磁化区域。 磁化自由区​​和第二磁化自由层磁耦合。 此外,无磁化区域的质心和第二磁化自由层的质心在特定的面内方向上移位。
    • 10. 发明申请
    • MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
    • 磁记忆元件和磁记忆
    • US20110297909A1
    • 2011-12-08
    • US13145082
    • 2010-01-28
    • Shunsuke FukamiTetsuhiro SuzukiKiyokazu NagaharaNobuyuki IshiwataNorikazu Ohshima
    • Shunsuke FukamiTetsuhiro SuzukiKiyokazu NagaharaNobuyuki IshiwataNorikazu Ohshima
    • H01L27/22H01L43/02
    • G11C11/16G11C11/161G11C11/1655G11C11/1659G11C11/1673G11C11/1675H01L27/228H01L43/08
    • A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
    • 磁存储元件包括:由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层,设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。 第一磁化自由层包括:磁化固定的第一磁化固定区域,固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域, 并且其中可以切换磁化。 第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。 第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。