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1. 发明授权

US08547733B2 Magnetic random access memory 有权
公开(公告)号：US08547733B2
公开(公告)日：2013-10-01
申请号：US13590634
申请日：2012-08-21
申请人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
发明人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L23/367 , H01L27/222 , H01L43/08 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

2. 发明授权

US08526222B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US08526222B2
公开(公告)日：2013-09-03
申请号：US13606737
申请日：2012-09-07
申请人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
发明人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L23/367 , H01L27/222 , H01L43/08 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.
摘要翻译：根据本发明的磁性随机存取存储器具有：包括具有可逆磁化强度的无磁化区的磁记录层，其中写入电流在面内方向上流过磁记录层; 具有固定磁化强度的磁化固定层; 设置在磁化自由区域和磁化固定层之间的非磁性层; 以及设置成与磁记录层相对并且具有接收和辐射在磁记录层中产生的热的功能的散热结构。这样结构的磁性随机存取存储器通过使用散热器结构辐射在磁记录层中产生的热量，从而抑制由在面内方向上流动的写入电流引起的温度升高。

3. 发明授权

US07929342B2 Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory 有权
标题翻译：磁存储单元，磁随机存取存储器以及用于磁随机存取存储器的数据读/写方法
公开(公告)号：US07929342B2
公开(公告)日：2011-04-19
申请号：US11996711
申请日：2006-08-04
申请人： Hideaki Numata , Norikazu Ohshima , Tetsuhiro Suzuki , Tadahiko Sugibayashi , Nobuyuki Ishiwata , Shunsuke Fukami
发明人： Hideaki Numata , Norikazu Ohshima , Tetsuhiro Suzuki , Tadahiko Sugibayashi , Nobuyuki Ishiwata , Shunsuke Fukami
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , H01L27/228
摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.
摘要翻译：本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域方向。第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

4. 发明申请

US20100149862A1 MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US20100149862A1
公开(公告)日：2010-06-17
申请号：US12297153
申请日：2007-04-09
申请人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
发明人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L23/367 , H01L27/222 , H01L43/08 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A magnetic random access memory comprises a magnetic recording layer equipped with a magnetization reversal region having a reversible magnetization and through which a write current is made to flow in the in-plane direction, a magnetization fixed layer having a fixed magnetization, a nonmagnetic layer provided between the magnetization reversal region and the magnetization fixed layer, and a heat absorbing structure provided opposing to the magnetic recording layer and having a function of receiving heat generated in the magnetic recording layer and of radiating the heat. Such magnetic random access memory can radiate heat generated in the magnetic recording layer by using the heat absorbing structure and prevent temperature rising caused by the write current flowing in the in-plane direction.
摘要翻译：磁性随机存取存储器包括配备有具有可逆磁化的磁化反转区域并通过其使写入电流在面内方向上流动的磁记录层，具有固定磁化强度的磁化固定层，提供非磁性层在磁化反转区域和磁化固定层之间，以及与磁记录层相对设置并具有接收在磁记录层中产生的热量和散热的功能的吸热结构。这种磁性随机存取存储器可以通过使用吸热结构辐射在磁记录层中产生的热量，并且防止由写入电流在面内方向上流动引起的温度上升。

5. 发明授权

US08351249B2 Magnetic random access memory 有权
公开(公告)号：US08351249B2
公开(公告)日：2013-01-08
申请号：US12297153
申请日：2007-04-09
申请人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
发明人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L23/367 , H01L27/222 , H01L43/08 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

6. 发明申请

US20100142264A1 MAGNETIC MEMORY CELL, MAGNETIC RANDOM ACCESS MEMORY, AND DATA READ/WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性存储单元，磁性随机存取存储器以及用于磁性随机访问存储器的数据读/写方法
公开(公告)号：US20100142264A1
公开(公告)日：2010-06-10
申请号：US11996711
申请日：2006-08-04
申请人： Hideaki Numata , Norikazu Ohshima , Tetsuhiro Suzuki , Tadahiko Sugibayashi , Nobuyuki Ishiwata , Shunsuke Fukami
发明人： Hideaki Numata , Norikazu Ohshima , Tetsuhiro Suzuki , Tadahiko Sugibayashi , Nobuyuki Ishiwata , Shunsuke Fukami
IPC分类号： G11C11/14 , H01L29/82 , G11C7/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , H01L27/228
摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.
摘要翻译：本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域方向。第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

7. 发明授权

US08565011B2 Method of initializing magnetic memory element 有权
标题翻译：初始化磁记忆元件的方法
公开(公告)号：US08565011B2
公开(公告)日：2013-10-22
申请号：US13120626
申请日：2009-10-29
申请人： Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： An initialization method is provided for a magnetic memory element including: a data recording layer having perpendicular magnetic anisotropy which includes: a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region coupled to the first magnetization fixed region and the second magnetization fixed region, the data recording layer being structure so that the coercive force of the first magnetization fixed region being different from that of the second magnetization fixed region. The initialization method includes steps of: directing the magnetizations of the first magnetization fixed region, the second magnetization fixed region and the magnetization free region in the same direction; and applying a magnetic field having both components perpendicular to and parallel to the magnetic anisotropy of the data recording layer to the data recording layer.
摘要翻译：提供了一种用于磁存储元件的初始化方法，包括：具有垂直磁各向异性的数据记录层，其包括：第一磁化固定区域，第二磁化固定区域和耦合到第一磁化固定区域的无磁化区域，磁化固定区域，数据记录层的结构使得第一磁化固定区域的矫顽力与第二磁化固定区域的矫顽力不同。该初始化方法包括以下步骤：将第一磁化固定区域，第二磁化固定区域和无磁化区域的磁化指向相同方向; 以及将具有与数据记录层的磁各向异性垂直并平行的两个分量的磁场施加到数据记录层。

8. 发明授权

US08559214B2 Magnetic memory device and magnetic random access memory 有权
标题翻译：磁存储器和磁随机存取存储器
公开(公告)号：US08559214B2
公开(公告)日：2013-10-15
申请号：US13139604
申请日：2009-12-24
申请人： Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C19/0808 , G11C19/0841 , H01L27/228
摘要： A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.
摘要翻译：磁存储单元设置有磁化记录层和磁性隧道结段。磁化记录层是具有垂直磁各向异性的铁磁层。磁性隧道结部分用于从磁化记录层读取数据。磁化记录层具有多个畴壁运动区域。

9. 发明申请

US20120278582A1 MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND INITIALIZING METHOD 有权
标题翻译：磁记忆元件，磁记忆和初始化方法
公开(公告)号：US20120278582A1
公开(公告)日：2012-11-01
申请号：US13504071
申请日：2010-10-21
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： G06F12/00 , H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/5607 , G11C19/0808 , G11C2013/0083 , H01L27/228
摘要： A magnetic memory element includes: a first magnetization free layer; a non-magnetic layer; a reference layer; a first magnetization fixed layer group; and a first blocking layer. The first magnetization free layer is composed of ferromagnetic material with perpendicular magnetic anisotropy and includes a first magnetization fixed region, a second magnetization fixed region and a magnetization free region. The non-magnetic layer is provided near the first magnetization free layer. The reference layer is composed of ferromagnetic material and provided on the non-magnetic layer. The first magnetization fixed layer group is provided near the first magnetization fixed region. The first blocking layer is provided being sandwiched between the first magnetization fixed layer group and the first magnetization fixed region or in the first magnetization fixed layer group.
摘要翻译：磁存储元件包括：第一磁化自由层; 非磁性层; 参考层; 第一磁化固定层组; 和第一阻挡层。第一磁化自由层由具有垂直磁各向异性的铁磁材料组成，并且包括第一磁化固定区域，第二磁化固定区域和无磁化区域。非磁性层设置在第一磁化自由层附近。参考层由铁磁材料组成并设置在非磁性层上。第一磁化固定层组设置在第一磁化固定区附近。第一阻挡层被设置在第一磁化固定层组和第一磁化固定区之间或第一磁化固定层组中。

10. 发明授权

US08174873B2 Magnetic random access memory and initializing method for the same 有权
标题翻译：磁性随机存取存储器和初始化方法相同
公开(公告)号：US08174873B2
公开(公告)日：2012-05-08
申请号：US12863740
申请日：2008-12-10
申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Norikazu Ohshima , Kiyokazu Nagahara , Nobuyuki Ishiwata
发明人： Tetsuhiro Suzuki , Shunsuke Fukami , Norikazu Ohshima , Kiyokazu Nagahara , Nobuyuki Ishiwata
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A domain wall motion type MRAM has: a magnetic recording layer 10 having perpendicular magnetic anisotropy; and a pair of terminals 51 and 52 used for supplying a current to the magnetic recording layer 10. The magnetic recording layer 10 has: a first magnetization region 11 connected to one of the pair of terminals; a second magnetization region 12 connected to the other of the pair of terminals; and a magnetization switching region 13 connecting between the first magnetization region 11 and the second magnetization region 12 and having reversible magnetization. A first pinning site PS1, by which the domain wall is trapped, is formed at a boundary between the first magnetization region 11 and the magnetization switching region 13. A second pinning site PS2, by which the domain wall is trapped, is formed at a boundary between the second magnetization region 12 and the magnetization switching region 13. A third pinning site PS3, by which the domain wall is trapped, is formed within the first magnetization region 11.
摘要翻译：畴壁运动型MRAM具有：具有垂直磁各向异性的磁记录层10; 以及用于向磁记录层10提供电流的一对端子51和52.磁记录层10具有：连接到该对端子之一的第一磁化区域11; 连接到所述一对端子中的另一个的第二磁化区域12; 以及连接在第一磁化区域11和第二磁化区域12之间并具有可逆磁化强度的磁化开关区域13。在第一磁化区域11和磁化转换区域13之间的边界处形成第一钉住位置PS1（通过该区域壁被捕获）。在第一磁化区域11和磁化转换区域13之间的边界处形成第二钉扎位置PS1 第二磁化区域12和磁化转换区域13之间的边界。在第一磁化区域11内形成有第三钉扎位置PS3，畴壁被捕获。

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