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1. 发明申请

US20090053503A1 Precursor composition for porous film and method for preparing the composition, porous film and method for preparing the porous film, and semiconductor device 审中-公开
标题翻译：多孔膜用前体组合物及其制备方法，多孔膜及其制备方法以及半导体装置
公开(公告)号：US20090053503A1
公开(公告)日：2009-02-26
申请号：US11886952
申请日：2006-03-17
申请人： Nobutoshi Fujii , Takahiro Nakayama , Toshihiko Kanayama , Kazuo Kohmura , Hirofumi Tanaka
发明人： Nobutoshi Fujii , Takahiro Nakayama , Toshihiko Kanayama , Kazuo Kohmura , Hirofumi Tanaka
IPC分类号： B32B3/26 , C09D7/12 , C09D171/02 , B05D3/02
CPC分类号： C09D183/04 , C08K3/02 , C09D7/61 , H01L21/02126 , H01L21/02142 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/31695 , Y10T428/249953
摘要： A precursor composition for porous film comprising at least one member selected from the group consisting of compounds represented by the following general formulas: Si(OR1)4 and Ra(Si)(OR2)4-a (in the formulas, R1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; a is an integer ranging from 1 to 3, provided that R, R1 and R2 may be the same or different); a heat decomposable organic compound capable of being thermally decomposed at a temperature of not less than 250° C.; and at least one element selected from the group consisting of elements each having a catalytic action, and organic solvent. A hydrophobic compound is subjected to a gas-phase polymerization reaction in the presence of a solution of this precursor composition to thus form a hydrophobic porous film having a low dielectric constant, a low refractive index and high mechanical strength. A semiconductor device prepared using the porous film.
摘要翻译：一种多孔膜用前体组合物，其含有选自由以下通式表示的化合物中的至少一种：Si（OR 1）4和Ra（Si）（OR 2）4-a（式中，R 1表示1价有机基团; R代表氢原子，氟原子或一价有机基团; R 2表示一价有机基团; a是1至3的整数，条件是R，R 1和R 2可以相同或不同）; 能够在不低于250℃的温度下热分解的可热分解有机化合物; 和选自由各自具有催化作用的元素组成的组中的至少一种元素和有机溶剂。在该前体组合物的溶液存在下使疏水性化合物进行气相聚合反应，形成介电常数低，折射率低，机械强度高的疏水性多孔膜。使用多孔膜制备的半导体器件。

2. 发明授权

US06746537B2 Coating apparatus 有权
标题翻译：涂装设备
公开(公告)号：US06746537B2
公开(公告)日：2004-06-08
申请号：US10224196
申请日：2002-08-19
申请人： Tsutomu Fukuda , Toshihiko Kanayama
发明人： Tsutomu Fukuda , Toshihiko Kanayama
IPC分类号： B05C302
CPC分类号： B05C9/06 , B05C5/0254
摘要： In order to provide a coating apparatus in which an edge can be fixed rigidly so as to apply a coating agent at a uniform thickness, edge units are provided which comprise edge support members and edges which are attached to the tips of the edge support members so as to slide on a flexible tape support member. The edge which is not disposed at both ends in the running direction of the flexible tape support member is fixed to the edge support member by an edge fixing member which is inserted in a direction from a bottom portion of the coating apparatus toward the edge. The edge is fixed so as to be pulled into a recessed section formed on the edge support member by the edge fixing member.
摘要翻译：为了提供其中边缘可以刚性固定以涂覆均匀厚度的涂层剂的涂覆装置，提供边缘单元，其包括边缘支撑构件和附接到边缘支撑构件的尖端的边缘，因此以便在柔性带支撑构件上滑动。在柔性带支撑构件的行进方向上未设置在两端的边缘通过边缘固定构件固定到边缘支撑构件，边缘固定构件沿着从涂覆装置的底部朝向边缘的方向插入。边缘被固定，以便通过边缘固定构件被拉入形成在边缘支撑构件上的凹部中。

3. 发明授权

US08093580B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08093580B2
公开(公告)日：2012-01-10
申请号：US12515384
申请日：2007-10-24
申请人： Hidefumi Hiura , Satoru Toguchi , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Satoru Toguchi , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L33/00
CPC分类号： H01L51/5203 , B82Y10/00 , H01L51/0048 , H01L51/444 , Y02E10/549 , Y02P70/521 , Y10S977/735 , Y10S977/75 , Y10S977/84 , Y10S977/949
摘要： A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.
摘要翻译：半导体器件具有这样的结构，其中有机材料等的发光层夹在封装具有低电离电位的供体的功函数控制单壁碳纳米管阴极和功函数控制的单壁碳封装具有高电子亲和力的受体的纳米管阳极。提供了由有机场效应发光元件表示的半导体器件及其制造方法。半导体装置及其制造方法可以提高诸如降低发光起始电压和高发光效率等特性和性能，以提高诸如寿命增加的可靠性，并且提高生产率，如降低制造成本。

4. 发明授权

US07408635B2 Optical measurement method and device 失效
标题翻译：光学测量方法和装置
公开(公告)号：US07408635B2
公开(公告)日：2008-08-05
申请号：US10570367
申请日：2004-09-03
申请人： Vladimir Pobortchi , Toshihiko Kanayama , Tetsuya Tada
发明人： Vladimir Pobortchi , Toshihiko Kanayama , Tetsuya Tada
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01Q60/22 , G01N21/658 , G01N2021/656
摘要： An optical measurement of a crystalline sample to be measured. The sample is irradiated with an exciting light from the polarization direction in which the Raman scattering is prohibited by the selection rule. When a metal probe is brought to proximity to the sample to be measured, the selection rule is eased locally only in the proximity portion near the probe end in order that Raman scattering becomes active. Thus, a Raman signal only from the proximity portion near the probe end is detected. An optical measurement apparatus having an optical arrangement for measuring a signal light re-emitted from a sample to be measured when the sample is irradiated with an exciting light is provided. The optical measurement apparatus comprises a means for limiting the polarization state of the exciting light or signal light and a means for bringing a metal probe near the sample to be measured. The optical measurement apparatus is used to measure the signal light obtained by locally easing the limitation on the polarization state by bringing the metal probe near the sample. Therefore, Raman scattering light from silicon or the like can be measured with high space-resolution exceeding the light diffraction limit.
摘要翻译：要测量的结晶样品的光学测量。用选择规则禁止拉曼散射的偏振方向的激发光照射样品。当使金属探针靠近待测样品时，选择规则仅在探针端附近的靠近部分缓和，以使拉曼散射成为活跃状态。因此，仅从探测端附近的靠近部分检测拉曼信号。提供一种具有光学装置的光学测量装置，用于当用激发光照射样品时，测量从待测样品重新发射的信号光。光学测量装置包括用于限制激发光或信号光的偏振状态的装置和用于使金属探针靠近待测样品的装置。光学测量装置用于通过使金属探针靠近样品来测量通过局部减轻极化状态限制而获得的信号光。因此，可以以超过光衍射极限的高空间分辨率来测量来自硅等的拉曼散射光。

5. 发明授权

US6117617A Patterning method utilizing electron beam resist containing methanofullerene compound 有权
标题翻译：利用含有甲基富勒烯化合物的电子束抗蚀剂的图案化方法
公开(公告)号：US6117617A
公开(公告)日：2000-09-12
申请号：US157103
申请日：1998-09-18
申请人： Toshihiko Kanayama , Tetsuya Tada , Richard Edward Palmer , Alexander Phillip Robinson
发明人： Toshihiko Kanayama , Tetsuya Tada , Richard Edward Palmer , Alexander Phillip Robinson
IPC分类号： C07C69/76 , G03F7/038 , H01L21/027 , G03C5/00
CPC分类号： G03F7/038 , Y10S430/143
摘要： A high-resolution patterning method of a resist layer is disclosed by patternwise irradiation of the resist layer with electron beams utilizing a methanofullerene compound as the electron beam resist material, which is graphitized and made insoluble in an organic solvent by the electron beam irradiation in a dose of, for example, 1.times.10.sup.-4 C/cm.sup.2 or larger. The thus formed resist layer is highly resistant against dry etching to ensure utilizability of the method in the fine patterning work for the manufacture of semiconductor devices.
摘要翻译：公开了抗蚀剂层的高分辨率图案形成方法，其中利用电子束的电子束以电子束的方式照射抗蚀剂层，该甲基富勒烯化合物作为电子束抗蚀剂材料，其通过电子束照射被石墨化并且不溶于有机溶剂剂量为例如1×10 -4 C / cm 2以上。由此形成的抗蚀剂层对于干蚀刻具有很高的抵抗力，以确保用于制造半导体器件的精细图案化工作中的方法的可利用性。

6. 发明授权

US08367030B2 Thin film of metal-silicon compound and process for producing the thin film of the metal-silicon compound 有权
标题翻译：金属硅化合物薄膜和金属硅化合物薄膜的制造方法
公开(公告)号：US08367030B2
公开(公告)日：2013-02-05
申请号：US12919443
申请日：2009-02-25
申请人： Toshihiko Kanayama , Noriyuki Uchida
发明人： Toshihiko Kanayama , Noriyuki Uchida
IPC分类号： C01B21/068
CPC分类号： C23C14/22 , C23C14/0682 , C23C14/28 , C23C16/42 , C23C16/44 , H01L29/24 , H01L29/66742 , H01L29/786
摘要： The present invention relates to a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound is a compound of a transition metal and silicon, and has a transition metal-containing silicon cluster as a unit structure, the transition metal-containing silicon cluster having a structure in which a transition metal atom is surrounded by seven to sixteen silicon atoms, two of which are first and second neighbor atoms to the transition metal atom.
摘要翻译：本发明涉及金属硅化合物的薄膜和金属硅化合物的薄膜的制造方法。金属硅化合物是过渡金属和硅的化合物，并且具有含过渡金属的硅簇作为单元结构，所述含过渡金属的硅簇具有以下结构：过渡金属原子被7〜十六个硅原子，其中两个是过渡金属原子的第一和第二相邻原子。

7. 发明授权

US08168964B2 Semiconductor device using graphene and method of manufacturing the same 有权
标题翻译：使用石墨烯的半导体器件及其制造方法
公开(公告)号：US08168964B2
公开(公告)日：2012-05-01
申请号：US12529501
申请日：2008-02-27
申请人： Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L29/167
CPC分类号： H01L27/0688 , B82Y10/00 , G11C11/412 , H01L21/8213 , H01L21/8221 , H01L21/823807 , H01L21/823828 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L29/0665 , H01L29/0673 , H01L29/16 , H01L29/1606 , H01L29/7781 , H01L29/78684 , Y10S977/755
摘要： A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.
摘要翻译：半导体石墨烯用于沟道层，并且金属石墨烯用于用作源极，漏极和栅极的电极层，其用作互连。氧化物用于栅极绝缘层。沟道层和电极层位于同一平面上。

8. 发明授权

US07138688B2 Doping method and semiconductor device fabricated using the method 失效
标题翻译：使用该方法制造的掺杂方法和半导体器件
公开(公告)号：US07138688B2
公开(公告)日：2006-11-21
申请号：US10655041
申请日：2003-09-05
申请人： Toshihiko Kanayama , Takehide Miyazaki , Hidefumi Hiura
发明人： Toshihiko Kanayama , Takehide Miyazaki , Hidefumi Hiura
IPC分类号： H01L29/76
CPC分类号： H01L29/6659 , H01L21/2257
摘要： A doping method includes the step of attaching molecules or clusters to the surface of a semiconductor substrate to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semiconductor device is fabricated through attachment of molecules or clusters to the surface of a semiconductor substrate. The attachment enables charge transfer from the molecules or clusters to the substrate surface to induce carriers underneath the substrate surface.
摘要翻译：掺杂方法包括将分子或簇附着到半导体衬底的表面以使电荷从分子或簇转移到衬底表面的步骤，从而在衬底表面下诱导载流子。通过将分子或簇附着到半导体衬底的表面来制造半导体器件。该附件使得能够从分子或簇到基底表面的电荷转移以在基底表面下诱导载体。

9. 发明授权

US07052653B2 Microsize driving device and method for preparation thereof 失效
标题翻译：微型驱动装置及其制备方法
公开(公告)号：US07052653B2
公开(公告)日：2006-05-30
申请号：US09748161
申请日：2000-12-27
申请人： Yuichi Hiratsuka , Taro Uyeda , Tetsuya Tada , Toshihiko Kanayama
发明人： Yuichi Hiratsuka , Taro Uyeda , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： B01J10/00 , B01J10/02 , B01J12/00 , B01J12/02 , B01J14/00
CPC分类号： B82Y5/00 , B01L3/50273 , B01L2200/0668 , B01L2400/086
摘要： Disclosed is a microsize driving device in which falling of track proteins from an arrangement of motor protein molecules arranged on a linear track groove provided on a substrate is suppressed and utilization of kinetic energy of track proteins as a driving energy is made possible by controlling the moving direction to a single direction. Namely, provided is a microsize driving device which comprises a substrate, an arrangement of motor protein molecules such as, for example, kinesin molecules deposited on the bottom of a linear track groove provided thereon and track proteins such as, for example, microtubules disposed thereon and is characterized in that the said linear track groove has side surfaces shaped in such a structure as to permit a linear movement of the track proteins moving in a certain specific direction but to inhibit the track proteins moving in the reverse direction thereto causing reversion for the movement in the above mentioned specific direction.
摘要翻译：公开了一种微尺寸驱动装置，其中抑制了布置在设置在基板上的线性轨道槽上的运动蛋白分子的布置的轨迹蛋白质的下降，并且通过控制移动的轨迹蛋白质的运动能量作为驱动能量成为可能方向到单一方向。即，提供了一种微尺寸驱动装置，其包括基底，运动蛋白分子的布置，例如沉积在其上设置的线性轨道凹槽的底部上的驱动蛋白分子，以及轨道蛋白，例如其上设置的微管并且其特征在于，所述线性轨道凹槽具有成形为这样的结构的侧表面，以允许沿特定方向移动的轨道蛋白质的线性运动，但是阻止轨迹蛋白沿相反方向移动，从而导致运动在上述具体方向。

10. 发明申请

US20110002833A1 THIN FILM OF METAL-SILICON COMPOUND AND PROCESS FOR PRODUCING THE THIN FILM OF THE METAL-SILICON COMPOUND 有权
标题翻译：金属硅化合物的薄膜和用于生产金属硅化合物薄膜的方法
公开(公告)号：US20110002833A1
公开(公告)日：2011-01-06
申请号：US12919443
申请日：2009-02-25
申请人： Toshihiko Kanayama , Noriyuki Uchida
发明人： Toshihiko Kanayama , Noriyuki Uchida
IPC分类号： C01B33/06 , B29C35/08 , B05D3/10
CPC分类号： C23C14/22 , C23C14/0682 , C23C14/28 , C23C16/42 , C23C16/44 , H01L29/24 , H01L29/66742 , H01L29/786
摘要： An object of the present invention is to provide a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound has, as a unit structure, a transition metal-containing silicon cluster in which an energy gap EHL between highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) is wide.The present invention relates to a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound is a compound of a transition metal and silicon, and has a transition metal-containing silicon cluster as a unit structure, the transition metal-containing silicon cluster having a structure in which a transition metal atom is surrounded by seven to sixteen silicon atoms, two of which are first and second neighbor atoms to the transition metal atom.
摘要翻译：本发明的目的是提供金属 - 硅化合物的薄膜和金属 - 硅化合物的薄膜的制造方法。作为单位结构的金属硅化合物具有含有过渡金属的硅簇，其中最高占据分子轨道（HOMO）和最低未占分子轨道（LUMO）之间的能隙EHL较宽。本发明涉及金属硅化合物的薄膜和金属硅化合物的薄膜的制造方法。金属硅化合物是过渡金属和硅的化合物，并且具有含过渡金属的硅簇作为单元结构，所述含过渡金属的硅簇具有以下结构：过渡金属原子被7〜十六个硅原子，其中两个是过渡金属原子的第一和第二相邻原子。

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