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1. 发明授权

US08168964B2 Semiconductor device using graphene and method of manufacturing the same 有权
标题翻译：使用石墨烯的半导体器件及其制造方法
公开(公告)号：US08168964B2
公开(公告)日：2012-05-01
申请号：US12529501
申请日：2008-02-27
申请人： Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L29/167
CPC分类号： H01L27/0688 , B82Y10/00 , G11C11/412 , H01L21/8213 , H01L21/8221 , H01L21/823807 , H01L21/823828 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L29/0665 , H01L29/0673 , H01L29/16 , H01L29/1606 , H01L29/7781 , H01L29/78684 , Y10S977/755
摘要： A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.
摘要翻译：半导体石墨烯用于沟道层，并且金属石墨烯用于用作源极，漏极和栅极的电极层，其用作互连。氧化物用于栅极绝缘层。沟道层和电极层位于同一平面上。

2. 发明申请

US20100102292A1 SEMICONDUCTOR DEVICE USING GRAPHENE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用石墨的半导体器件及其制造方法
公开(公告)号：US20100102292A1
公开(公告)日：2010-04-29
申请号：US12529501
申请日：2008-02-27
申请人： Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L29/167 , H01L21/04
CPC分类号： H01L27/0688 , B82Y10/00 , G11C11/412 , H01L21/8213 , H01L21/8221 , H01L21/823807 , H01L21/823828 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L29/0665 , H01L29/0673 , H01L29/16 , H01L29/1606 , H01L29/7781 , H01L29/78684 , Y10S977/755
摘要： A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.
摘要翻译：半导体石墨烯用于沟道层，并且金属石墨烯用于用作源极，漏极和栅极的电极层，其也用作互连。氧化物用于栅极绝缘层。沟道层和电极层位于同一平面上。

3. 发明申请

US20100012923A1 DOPANT MATERIAL, DOPANT MATERIAL MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING THE SAME 失效
标题翻译：憎水材料，憎水材料制造方法和使用其的半导体器件
公开(公告)号：US20100012923A1
公开(公告)日：2010-01-21
申请号：US11325547
申请日：2006-01-05
申请人： Hidefumi Hiura , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L29/66
CPC分类号： H01L51/002 , B82Y10/00 , C01B25/42 , H01L51/0048
摘要： It is to provide a thermodynamically and chemically stable dopant material which can achieve controls of the pn conduction types, carrier density, and threshold value of gate voltage, and a manufacturing method thereof. Further, it is to provide an actually operable semiconductor device such as a transistor with an excellent high-speed operability and high-integration characteristic. Provided is a dopant material obtained by depositing, on a carbon nanotube, a donor with a smaller ionization potential than an intrinsic work function of the carbon nanotube or an acceptor with a larger electron affinity than the intrinsic work function of the carbon nanotube. The ionization potential of the donor in vacuum is desired to be 6.4 eV or less, and the electron affinity of the acceptor in vacuum to be 2.3 eV or more.
摘要翻译：提供一种能够实现pn导电类型，载流子浓度和栅极电压阈值的控制的热力学和化学稳定的掺杂剂材料及其制造方法。此外，提供具有优异的高速可操作性和高集成度特性的诸如晶体管的实际可操作的半导体器件。提供了通过在碳纳米管上沉积具有比碳纳米管的固有功函数更小的电子给电子或具有比碳纳米管的固有功函数更大的电子亲和力的受主的给体获得的掺杂剂材料。供体在真空中的电离电位希望为6.4eV或更低，并且受体在真空中的电子亲和力为2.3eV以上。

4. 发明授权

US08093580B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08093580B2
公开(公告)日：2012-01-10
申请号：US12515384
申请日：2007-10-24
申请人： Hidefumi Hiura , Satoru Toguchi , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Satoru Toguchi , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L33/00
CPC分类号： H01L51/5203 , B82Y10/00 , H01L51/0048 , H01L51/444 , Y02E10/549 , Y02P70/521 , Y10S977/735 , Y10S977/75 , Y10S977/84 , Y10S977/949
摘要： A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.
摘要翻译：半导体器件具有这样的结构，其中有机材料等的发光层夹在封装具有低电离电位的供体的功函数控制单壁碳纳米管阴极和功函数控制的单壁碳封装具有高电子亲和力的受体的纳米管阳极。提供了由有机场效应发光元件表示的半导体器件及其制造方法。半导体装置及其制造方法可以提高诸如降低发光起始电压和高发光效率等特性和性能，以提高诸如寿命增加的可靠性，并且提高生产率，如降低制造成本。

5. 发明授权

US07687801B2 Dopant material, dopant material manufacturing method, and semiconductor device using the same 失效
标题翻译：掺杂剂材料，掺杂剂材料制造方法和使用其的半导体器件
公开(公告)号：US07687801B2
公开(公告)日：2010-03-30
申请号：US11325547
申请日：2006-01-05
申请人： Hidefumi Hiura , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L35/24
CPC分类号： H01L51/002 , B82Y10/00 , C01B25/42 , H01L51/0048
摘要： It is to provide a thermodynamically and chemically stable dopant material which can achieve controls of the pn conduction types, carrier density, and threshold value of gate voltage, and a manufacturing method thereof. Further, it is to provide an actually operable semiconductor device such as a transistor with an excellent high-speed operability and high-integration characteristic. Provided is a dopant material obtained by depositing, on a carbon nanotube, a donor with a smaller ionization potential than an intrinsic work function of the carbon nanotube or an acceptor with a larger electron affinity than the intrinsic work function of the carbon nanotube. The ionization potential of the donor in vacuum is desired to be 6.4 eV or less, and the electron affinity of the acceptor in vacuum to be 2.3 eV or more.
摘要翻译：提供一种能够实现pn导电类型，载流子浓度和栅极电压阈值的控制的热力学和化学稳定的掺杂剂材料及其制造方法。此外，提供具有优异的高速可操作性和高集成度特性的诸如晶体管的实际可操作的半导体器件。提供了通过在碳纳米管上沉积具有比碳纳米管的固有功函数更小的电子给电子或具有比碳纳米管的固有功函数更大的电子亲和力的受主的给体获得的掺杂剂材料。供体在真空中的电离电位希望为6.4eV或更低，并且受体在真空中的电子亲和力为2.3eV以上。

6. 发明申请

US20100051902A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100051902A1
公开(公告)日：2010-03-04
申请号：US12515384
申请日：2007-10-24
申请人： Hidefumi Hiura , Satoru Toguchi , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Satoru Toguchi , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L51/52 , H01L33/00 , H01L51/56
CPC分类号： H01L51/5203 , B82Y10/00 , H01L51/0048 , H01L51/444 , Y02E10/549 , Y02P70/521 , Y10S977/735 , Y10S977/75 , Y10S977/84 , Y10S977/949
摘要： A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.
摘要翻译：半导体器件具有这样的结构，其中有机材料等的发光层夹在封装具有低电离电位的供体的功函数控制单壁碳纳米管阴极和功函数控制的单壁碳封装具有高电子亲和力的受体的纳米管阳极。提供了由有机场效应发光元件表示的半导体器件及其制造方法。半导体装置及其制造方法可以提高诸如降低发光起始电压和高发光效率等特性和性能，以提高诸如寿命增加的可靠性，并且提高生产率，如降低制造成本。

7. 发明授权

US07247548B2 Doping method and semiconductor device using the same 失效
标题翻译：掺杂法和使用其的半导体器件
公开(公告)号：US07247548B2
公开(公告)日：2007-07-24
申请号：US11005285
申请日：2004-12-06
申请人： Tetsuya Tada , Toshihiko Kanayama , Hidefumi Hiura
发明人： Tetsuya Tada , Toshihiko Kanayama , Hidefumi Hiura
IPC分类号： H01L21/22
CPC分类号： B82Y10/00 , H01L29/0895 , H01L29/66643 , H01L29/7833 , H01L51/0046
摘要： The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is conducted by attaching a molecular species with a higher electron affinity or lower ionization energy out of fullerene derivatives or metallocenes to the semiconductor surface to induce charge transfer from the molecule to the semiconductor.
摘要翻译：本发明实现了源极和漏极的浅结，并且提供了使器件特性可再现的掺杂方法和使用该方法制造的半导体器件。在本发明中，通过将富勒烯衍生物或金属茂中具有较高电子亲和力或较低电离能的分子物质附着到半导体表面以诱导从分子到半导体的电荷转移来进行半导体的掺杂。

8. 发明申请

US20070161213A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070161213A1
公开(公告)日：2007-07-12
申请号：US11589188
申请日：2006-10-30
申请人： Hidefumi Hiura , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L51/0512 , B82Y10/00 , H01L51/0048
摘要： A self-aligned/self-limited processing is carried out on a nanowire material typified by a carbon nanotube or on the vicinity of the nanowire material alone in the following manner. External energy is applied to the nanowire material. Joule heat, light, or a thermoelectron is thereby locally formed and acts as minute energy. The minute energy causes a chemical reaction of an externally added raw material and causes the conversion of a property of the nanowire material.
摘要翻译：以纳米线材料为代表的纳米线材料或仅在纳米线材料附近以如下方式进行自对准/自限制加工。外部能量被施加到纳米线材料上。焦耳热，光或热电子因此局部形成并作为微小的能量。微小的能量引起外部添加的原料的化学反应并导致纳米线材料的性质的转化。

9. 发明申请

US20050130395A1 Doping method and semiconductor device using the same 失效
标题翻译：掺杂法和使用其的半导体器件
公开(公告)号：US20050130395A1
公开(公告)日：2005-06-16
申请号：US11005285
申请日：2004-12-06
申请人： Tetsuya Tada , Toshihiko Kanayama , Hidefumi Hiura
发明人： Tetsuya Tada , Toshihiko Kanayama , Hidefumi Hiura
IPC分类号： H01L27/10 , H01L21/329 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/08 , H01L29/66 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/861 , H01L51/30 , H01L21/04 , H01L21/38
CPC分类号： B82Y10/00 , H01L29/0895 , H01L29/66643 , H01L29/7833 , H01L51/0046
摘要： The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is conducted by attaching a molecular species with a higher electron affinity or lower ionization energy out of fullerene derivatives or metallocenes to the semiconductor surface to induce charge transfer from the molecule to the semiconductor.
摘要翻译：本发明实现了源极和漏极的浅结，并且提供了使器件特性可再现的掺杂方法和使用该方法制造的半导体器件。在本发明中，通过将富勒烯衍生物或金属茂中具有较高电子亲和力或较低电离能的分子物质附着到半导体表面以诱导从分子到半导体的电荷转移来进行半导体的掺杂。

10. 发明授权

US06503688B1 Electron beam resist 失效
标题翻译：电子束抗蚀剂
公开(公告)号：US06503688B1
公开(公告)日：2003-01-07
申请号：US09868274
申请日：2001-08-03
申请人： Jon Andrew Preece , Richard Edward Palmer , Alexander Phillip Robinson , Toshihiko Kanayama , Tetsuya Tada
发明人： Jon Andrew Preece , Richard Edward Palmer , Alexander Phillip Robinson , Toshihiko Kanayama , Tetsuya Tada
IPC分类号： G03C500
CPC分类号： G03F7/038 , Y10S430/143
摘要： A high resolution patterning method of a resist layer is disclosed by patternwise irradiation of a resist layer with electron beam utilizing a polysubstituted triphenylene compound as the electron beam resist material, which is graphitized and made insoluble in both polar and non-polar organic solvents for electron doses greater than 2×10−3 C/cm2, and which undergoes cleavage of the adduct chains and extensive de-aromatization of the triphenylene core therefore enhancing the solubility in polar solvents only for electron doses between 3×10−4 and 2×10−3 C/cm2. The thus formed positive or negative tone resist layer is highly resistant against dry etching to ensure the utility of the method in fine patterning work for the manufacture of semiconductor devices.
摘要翻译：通过使用多取代的三亚苯化合物作为电子束抗蚀材料的电子束图案照射抗蚀剂层来公开抗蚀剂层的高分辨率图案化方法，其被石墨化并使其不溶于电子的极性和非极性有机溶剂剂量大于2×10 -3 C / cm 2，并且其经历了加合物链的裂解和三亚苯基核心的广泛去芳构化，因此仅在3×10 -4和2×10 -3 C / cm 2之间的电子剂量下增强了在极性溶剂中的溶解度。由此形成的正或负色调抗蚀剂层具有高抗干蚀刻性，以确保该方法在精细图案化工作中用于半导体器件的制造。

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