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1. 发明授权

US6117617A Patterning method utilizing electron beam resist containing methanofullerene compound 有权
标题翻译：利用含有甲基富勒烯化合物的电子束抗蚀剂的图案化方法
公开(公告)号：US6117617A
公开(公告)日：2000-09-12
申请号：US157103
申请日：1998-09-18
申请人： Toshihiko Kanayama , Tetsuya Tada , Richard Edward Palmer , Alexander Phillip Robinson
发明人： Toshihiko Kanayama , Tetsuya Tada , Richard Edward Palmer , Alexander Phillip Robinson
IPC分类号： C07C69/76 , G03F7/038 , H01L21/027 , G03C5/00
CPC分类号： G03F7/038 , Y10S430/143
摘要： A high-resolution patterning method of a resist layer is disclosed by patternwise irradiation of the resist layer with electron beams utilizing a methanofullerene compound as the electron beam resist material, which is graphitized and made insoluble in an organic solvent by the electron beam irradiation in a dose of, for example, 1.times.10.sup.-4 C/cm.sup.2 or larger. The thus formed resist layer is highly resistant against dry etching to ensure utilizability of the method in the fine patterning work for the manufacture of semiconductor devices.
摘要翻译：公开了抗蚀剂层的高分辨率图案形成方法，其中利用电子束的电子束以电子束的方式照射抗蚀剂层，该甲基富勒烯化合物作为电子束抗蚀剂材料，其通过电子束照射被石墨化并且不溶于有机溶剂剂量为例如1×10 -4 C / cm 2以上。由此形成的抗蚀剂层对于干蚀刻具有很高的抵抗力，以确保用于制造半导体器件的精细图案化工作中的方法的可利用性。

2. 发明授权

US06503688B1 Electron beam resist 失效
标题翻译：电子束抗蚀剂
公开(公告)号：US06503688B1
公开(公告)日：2003-01-07
申请号：US09868274
申请日：2001-08-03
申请人： Jon Andrew Preece , Richard Edward Palmer , Alexander Phillip Robinson , Toshihiko Kanayama , Tetsuya Tada
发明人： Jon Andrew Preece , Richard Edward Palmer , Alexander Phillip Robinson , Toshihiko Kanayama , Tetsuya Tada
IPC分类号： G03C500
CPC分类号： G03F7/038 , Y10S430/143
摘要： A high resolution patterning method of a resist layer is disclosed by patternwise irradiation of a resist layer with electron beam utilizing a polysubstituted triphenylene compound as the electron beam resist material, which is graphitized and made insoluble in both polar and non-polar organic solvents for electron doses greater than 2×10−3 C/cm2, and which undergoes cleavage of the adduct chains and extensive de-aromatization of the triphenylene core therefore enhancing the solubility in polar solvents only for electron doses between 3×10−4 and 2×10−3 C/cm2. The thus formed positive or negative tone resist layer is highly resistant against dry etching to ensure the utility of the method in fine patterning work for the manufacture of semiconductor devices.
摘要翻译：通过使用多取代的三亚苯化合物作为电子束抗蚀材料的电子束图案照射抗蚀剂层来公开抗蚀剂层的高分辨率图案化方法，其被石墨化并使其不溶于电子的极性和非极性有机溶剂剂量大于2×10 -3 C / cm 2，并且其经历了加合物链的裂解和三亚苯基核心的广泛去芳构化，因此仅在3×10 -4和2×10 -3 C / cm 2之间的电子剂量下增强了在极性溶剂中的溶解度。由此形成的正或负色调抗蚀剂层具有高抗干蚀刻性，以确保该方法在精细图案化工作中用于半导体器件的制造。

3. 发明授权

US08093580B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08093580B2
公开(公告)日：2012-01-10
申请号：US12515384
申请日：2007-10-24
申请人： Hidefumi Hiura , Satoru Toguchi , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Satoru Toguchi , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L33/00
CPC分类号： H01L51/5203 , B82Y10/00 , H01L51/0048 , H01L51/444 , Y02E10/549 , Y02P70/521 , Y10S977/735 , Y10S977/75 , Y10S977/84 , Y10S977/949
摘要： A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.
摘要翻译：半导体器件具有这样的结构，其中有机材料等的发光层夹在封装具有低电离电位的供体的功函数控制单壁碳纳米管阴极和功函数控制的单壁碳封装具有高电子亲和力的受体的纳米管阳极。提供了由有机场效应发光元件表示的半导体器件及其制造方法。半导体装置及其制造方法可以提高诸如降低发光起始电压和高发光效率等特性和性能，以提高诸如寿命增加的可靠性，并且提高生产率，如降低制造成本。

4. 发明授权

US07408635B2 Optical measurement method and device 失效
标题翻译：光学测量方法和装置
公开(公告)号：US07408635B2
公开(公告)日：2008-08-05
申请号：US10570367
申请日：2004-09-03
申请人： Vladimir Pobortchi , Toshihiko Kanayama , Tetsuya Tada
发明人： Vladimir Pobortchi , Toshihiko Kanayama , Tetsuya Tada
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01Q60/22 , G01N21/658 , G01N2021/656
摘要： An optical measurement of a crystalline sample to be measured. The sample is irradiated with an exciting light from the polarization direction in which the Raman scattering is prohibited by the selection rule. When a metal probe is brought to proximity to the sample to be measured, the selection rule is eased locally only in the proximity portion near the probe end in order that Raman scattering becomes active. Thus, a Raman signal only from the proximity portion near the probe end is detected. An optical measurement apparatus having an optical arrangement for measuring a signal light re-emitted from a sample to be measured when the sample is irradiated with an exciting light is provided. The optical measurement apparatus comprises a means for limiting the polarization state of the exciting light or signal light and a means for bringing a metal probe near the sample to be measured. The optical measurement apparatus is used to measure the signal light obtained by locally easing the limitation on the polarization state by bringing the metal probe near the sample. Therefore, Raman scattering light from silicon or the like can be measured with high space-resolution exceeding the light diffraction limit.
摘要翻译：要测量的结晶样品的光学测量。用选择规则禁止拉曼散射的偏振方向的激发光照射样品。当使金属探针靠近待测样品时，选择规则仅在探针端附近的靠近部分缓和，以使拉曼散射成为活跃状态。因此，仅从探测端附近的靠近部分检测拉曼信号。提供一种具有光学装置的光学测量装置，用于当用激发光照射样品时，测量从待测样品重新发射的信号光。光学测量装置包括用于限制激发光或信号光的偏振状态的装置和用于使金属探针靠近待测样品的装置。光学测量装置用于通过使金属探针靠近样品来测量通过局部减轻极化状态限制而获得的信号光。因此，可以以超过光衍射极限的高空间分辨率来测量来自硅等的拉曼散射光。

5. 发明授权

US08168964B2 Semiconductor device using graphene and method of manufacturing the same 有权
标题翻译：使用石墨烯的半导体器件及其制造方法
公开(公告)号：US08168964B2
公开(公告)日：2012-05-01
申请号：US12529501
申请日：2008-02-27
申请人： Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L29/167
CPC分类号： H01L27/0688 , B82Y10/00 , G11C11/412 , H01L21/8213 , H01L21/8221 , H01L21/823807 , H01L21/823828 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L29/0665 , H01L29/0673 , H01L29/16 , H01L29/1606 , H01L29/7781 , H01L29/78684 , Y10S977/755
摘要： A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.
摘要翻译：半导体石墨烯用于沟道层，并且金属石墨烯用于用作源极，漏极和栅极的电极层，其用作互连。氧化物用于栅极绝缘层。沟道层和电极层位于同一平面上。

6. 发明授权

US07052653B2 Microsize driving device and method for preparation thereof 失效
标题翻译：微型驱动装置及其制备方法
公开(公告)号：US07052653B2
公开(公告)日：2006-05-30
申请号：US09748161
申请日：2000-12-27
申请人： Yuichi Hiratsuka , Taro Uyeda , Tetsuya Tada , Toshihiko Kanayama
发明人： Yuichi Hiratsuka , Taro Uyeda , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： B01J10/00 , B01J10/02 , B01J12/00 , B01J12/02 , B01J14/00
CPC分类号： B82Y5/00 , B01L3/50273 , B01L2200/0668 , B01L2400/086
摘要： Disclosed is a microsize driving device in which falling of track proteins from an arrangement of motor protein molecules arranged on a linear track groove provided on a substrate is suppressed and utilization of kinetic energy of track proteins as a driving energy is made possible by controlling the moving direction to a single direction. Namely, provided is a microsize driving device which comprises a substrate, an arrangement of motor protein molecules such as, for example, kinesin molecules deposited on the bottom of a linear track groove provided thereon and track proteins such as, for example, microtubules disposed thereon and is characterized in that the said linear track groove has side surfaces shaped in such a structure as to permit a linear movement of the track proteins moving in a certain specific direction but to inhibit the track proteins moving in the reverse direction thereto causing reversion for the movement in the above mentioned specific direction.
摘要翻译：公开了一种微尺寸驱动装置，其中抑制了布置在设置在基板上的线性轨道槽上的运动蛋白分子的布置的轨迹蛋白质的下降，并且通过控制移动的轨迹蛋白质的运动能量作为驱动能量成为可能方向到单一方向。即，提供了一种微尺寸驱动装置，其包括基底，运动蛋白分子的布置，例如沉积在其上设置的线性轨道凹槽的底部上的驱动蛋白分子，以及轨道蛋白，例如其上设置的微管并且其特征在于，所述线性轨道凹槽具有成形为这样的结构的侧表面，以允许沿特定方向移动的轨道蛋白质的线性运动，但是阻止轨迹蛋白沿相反方向移动，从而导致运动在上述具体方向。

7. 发明申请

US20100012923A1 DOPANT MATERIAL, DOPANT MATERIAL MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING THE SAME 失效
标题翻译：憎水材料，憎水材料制造方法和使用其的半导体器件
公开(公告)号：US20100012923A1
公开(公告)日：2010-01-21
申请号：US11325547
申请日：2006-01-05
申请人： Hidefumi Hiura , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L29/66
CPC分类号： H01L51/002 , B82Y10/00 , C01B25/42 , H01L51/0048
摘要： It is to provide a thermodynamically and chemically stable dopant material which can achieve controls of the pn conduction types, carrier density, and threshold value of gate voltage, and a manufacturing method thereof. Further, it is to provide an actually operable semiconductor device such as a transistor with an excellent high-speed operability and high-integration characteristic. Provided is a dopant material obtained by depositing, on a carbon nanotube, a donor with a smaller ionization potential than an intrinsic work function of the carbon nanotube or an acceptor with a larger electron affinity than the intrinsic work function of the carbon nanotube. The ionization potential of the donor in vacuum is desired to be 6.4 eV or less, and the electron affinity of the acceptor in vacuum to be 2.3 eV or more.
摘要翻译：提供一种能够实现pn导电类型，载流子浓度和栅极电压阈值的控制的热力学和化学稳定的掺杂剂材料及其制造方法。此外，提供具有优异的高速可操作性和高集成度特性的诸如晶体管的实际可操作的半导体器件。提供了通过在碳纳米管上沉积具有比碳纳米管的固有功函数更小的电子给电子或具有比碳纳米管的固有功函数更大的电子亲和力的受主的给体获得的掺杂剂材料。供体在真空中的电离电位希望为6.4eV或更低，并且受体在真空中的电子亲和力为2.3eV以上。

8. 发明授权

US5647999A Method for fine patterning of a polymeric film 失效
标题翻译：聚合物膜精细图案化的方法
公开(公告)号：US5647999A
公开(公告)日：1997-07-15
申请号：US618606
申请日：1996-03-20
申请人： Tetsuya Tada , Toshihiko Kanayama
发明人： Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L21/302 , C23F1/00 , G03F7/00 , H01L21/3065 , B44C1/22 , H01L21/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S438/947 , Y10S977/857
摘要： A unique method is proposed for fine patterning of a polymeric resin film on a substrate surface or fine patterning of the substrate surface with the patterned resin film as the resist. The method comprises the steps of: (a) forming a thin film of the resin on the substrate surface; (b) pressing the resin film pattern-wise under a pressure in a specified range by using, for example, a fine needle tip so as to enhance adhesion of the resin molecules to the substrate surface; and (c) dissolving away the resin film with an organic solvent selectively in the areas where the pressure is not applied in step (c) leaving the resin in a pattern-wise area after application of the pressure. The fineness of this patterning can be extremely high to be in the molecular size order.
摘要翻译：提出了用于在基板表面上精细图案化聚合物树脂膜或用图案化树脂膜作为抗蚀剂的基板表面的精细图案化的独特方法。该方法包括以下步骤：（a）在衬底表面上形成树脂薄膜; （b）通过使用例如细针尖在特定范围内的压力下以图案方式压制树脂膜，以增强树脂分子与基材表面的粘合性; 和（c）在施加压力之后，将有机溶剂选择性地溶解在步骤（c）中没有施加压力的区域中，使树脂留在图案区域中。该图案化的细度可以非常高以分子大小顺序。

9. 发明申请

US20100102292A1 SEMICONDUCTOR DEVICE USING GRAPHENE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用石墨的半导体器件及其制造方法
公开(公告)号：US20100102292A1
公开(公告)日：2010-04-29
申请号：US12529501
申请日：2008-02-27
申请人： Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L29/167 , H01L21/04
CPC分类号： H01L27/0688 , B82Y10/00 , G11C11/412 , H01L21/8213 , H01L21/8221 , H01L21/823807 , H01L21/823828 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L29/0665 , H01L29/0673 , H01L29/16 , H01L29/1606 , H01L29/7781 , H01L29/78684 , Y10S977/755
摘要： A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.
摘要翻译：半导体石墨烯用于沟道层，并且金属石墨烯用于用作源极，漏极和栅极的电极层，其也用作互连。氧化物用于栅极绝缘层。沟道层和电极层位于同一平面上。

10. 发明授权

US07687801B2 Dopant material, dopant material manufacturing method, and semiconductor device using the same 失效
标题翻译：掺杂剂材料，掺杂剂材料制造方法和使用其的半导体器件
公开(公告)号：US07687801B2
公开(公告)日：2010-03-30
申请号：US11325547
申请日：2006-01-05
申请人： Hidefumi Hiura , Tetsuya Tada , Toshihiko Kanayama
发明人： Hidefumi Hiura , Tetsuya Tada , Toshihiko Kanayama
IPC分类号： H01L35/24
CPC分类号： H01L51/002 , B82Y10/00 , C01B25/42 , H01L51/0048
摘要： It is to provide a thermodynamically and chemically stable dopant material which can achieve controls of the pn conduction types, carrier density, and threshold value of gate voltage, and a manufacturing method thereof. Further, it is to provide an actually operable semiconductor device such as a transistor with an excellent high-speed operability and high-integration characteristic. Provided is a dopant material obtained by depositing, on a carbon nanotube, a donor with a smaller ionization potential than an intrinsic work function of the carbon nanotube or an acceptor with a larger electron affinity than the intrinsic work function of the carbon nanotube. The ionization potential of the donor in vacuum is desired to be 6.4 eV or less, and the electron affinity of the acceptor in vacuum to be 2.3 eV or more.
摘要翻译：提供一种能够实现pn导电类型，载流子浓度和栅极电压阈值的控制的热力学和化学稳定的掺杂剂材料及其制造方法。此外，提供具有优异的高速可操作性和高集成度特性的诸如晶体管的实际可操作的半导体器件。提供了通过在碳纳米管上沉积具有比碳纳米管的固有功函数更小的电子给电子或具有比碳纳米管的固有功函数更大的电子亲和力的受主的给体获得的掺杂剂材料。供体在真空中的电离电位希望为6.4eV或更低，并且受体在真空中的电子亲和力为2.3eV以上。

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