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1. 发明授权

US5663865A Ceramic electrostatic chuck with built-in heater 失效
标题翻译：陶瓷静电吸盘内置加热器
公开(公告)号：US5663865A
公开(公告)日：1997-09-02
申请号：US603155
申请日：1996-02-20
申请人： Nobuo Kawada , Ryoji Nakajima , Toshihiko Shindo , Takaaki Nagao
发明人： Nobuo Kawada , Ryoji Nakajima , Toshihiko Shindo , Takaaki Nagao
IPC分类号： B25J15/06 , C04B35/583 , C04B41/87 , H01L21/00 , H01L21/683 , H02N13/00
CPC分类号： H01L21/67103 , H01L21/6831 , H01L21/6833 , H02N13/00
摘要： Proposed is a ceramic-based electrostatic chuck with built-in heater used in high-temperature processing of a semiconductor silicon wafer, which is capable of exhibiting excellent electrostatic attracting force even at a temperature at which conventional ceramic-based electrostatic chucks cannot exhibit high attracting force. The electrostatic chuck with built-in heater of the invention is an integral body comprising: (a) a base body of a sintered mixture of boron nitride and aluminum nitride; (b) a first pyrolytic graphite layer formed on one surface of the base body to serve as a resistance heater element; (c) a first insulating layer of pyrolytic boron nitride on the first pyrolytic graphite layer; (d) a second pyrolytic graphite layer formed on the other surface of the base body to serve as the electrodes for electrostatic chucking; and (e) a second insulating layer on the second pyrolytic graphite layer formed from a pyrolytic composite nitride of boron and silicon of which the content of silicon is in the range from 1% to 10% by weight having an appropriate volume resistivity at a temperature of 500.degree. to 650.degree. C. as deposited by the pyrolysis of a gaseous mixture of ammonia, boron trichloride and silicon tetrachloride.
摘要翻译：提出了一种用于半导体硅晶片的高温处理的内置加热器的陶瓷型静电卡盘，其即使在常规的陶瓷基静电卡盘不能显示高吸引力的温度下也能够表现出优异的静电吸引力力。本发明的具有内置加热器的静电卡盘是一体的主体，包括：（a）氮化硼和氮化铝的烧结混合物的基体; （b）形成在所述基体的一个表面上以用作电阻加热元件的第一热解石墨层; （c）第一热解石墨层上的热解氮化硼的第一绝缘层; （d）形成在基体的另一个表面上的第二热解石墨层，用作静电吸附用电极; 和（e）由硼和硅的热解复合氮化物形成的第二热解石墨层上的第二绝缘层，其硅含量在1至10重量％的范围内，其温度在适当的体积电阻率通过氨，三氯化硼和四氯化硅的气体混合物的热解而沉积的500℃至650℃。

2. 发明授权

US07541283B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US07541283B2
公开(公告)日：2009-06-02
申请号：US11066260
申请日：2005-02-28
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/44
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译：一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。

3. 发明授权

US07919217B2 Pellicle and method for producing pellicle 有权
标题翻译：防护薄膜组件和防护薄膜制造方法
公开(公告)号：US07919217B2
公开(公告)日：2011-04-05
申请号：US12466042
申请日：2009-05-14
申请人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
发明人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
IPC分类号： G03F1/00 , A47G1/12
CPC分类号： G03F1/64 , G03F1/62
摘要： A pellicle film of a silicon single crystal film and a base substrate supporting the pellicle film are formed of a single substrate using an SOI substrate. The base substrate is provided with an opening whose ratio in area to an exposure region when a pellicle is used on a photomask (an open area ratio) is 60% or more, and provided with a reinforcing frame in a non-exposure region of the base substrate. Since the pellicle film and the base substrate supporting the pellicle film are formed of the single substrate (an integrated structure), and the base substrate is provided with the reinforcing frame, the effect of increased strength is obtained. Moreover, a principal plane of a silicon single crystal film is a crystal plane inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes.
摘要翻译：使用SOI基板由单个基板形成硅单晶膜的防护薄膜和支撑防护薄膜的基板。基底基板设置有当在光掩模上使用防护薄膜（开放面积比）时的面积与曝光区域的比例为60％以上的开口，并且在该曝光区域的非曝光区域中设置有加强框架基底。由于防护薄膜和支撑防护薄膜的基板由单个基板（一体化结构）形成，并且基底基板设置有加强框架，因此获得了提高强度的效果。此外，硅单晶膜的主面是从属于{100}面或{111}面的任何晶格面倾斜3〜5°的晶面。

4. 发明申请

US20090291372A1 PELLICLE AND METHOD FOR PRODUCING PELLICLE 有权
标题翻译：用于生产油脂的油脂和方法
公开(公告)号：US20090291372A1
公开(公告)日：2009-11-26
申请号：US12466042
申请日：2009-05-14
申请人： Yoshihiro KUBOTA , Shoji Akiyama , Toshihiko Shindo
发明人： Yoshihiro KUBOTA , Shoji Akiyama , Toshihiko Shindo
IPC分类号： G03F1/00
CPC分类号： G03F1/64 , G03F1/62
摘要： A pellicle film of a silicon single crystal film and a base substrate supporting the pellicle film are formed of a single substrate using an SOI substrate. The base substrate is provided with an opening whose ratio in area to an exposure region when a pellicle is used on a photomask (an open area ratio) is 60% or more, and provided with a reinforcing frame in a non-exposure region of the base substrate. Since the pellicle film and the base substrate supporting the pellicle film are formed of the single substrate (an integrated structure), and the base substrate is provided with the reinforcing frame, the effect of increased strength is obtained. Moreover, a principal plane of a silicon single crystal film is a crystal plane inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes.
摘要翻译：使用SOI基板由单个基板形成硅单晶膜的防护薄膜和支撑防护薄膜的基板。基底基板设置有当在光掩模上使用防护薄膜（开放面积比）时的面积与曝光区域的比例为60％以上的开口，并且在该曝光区域的非曝光区域中设置有加强框架基底。由于防护薄膜和支撑防护薄膜的基板由单个基板（一体化结构）形成，并且基底基板设置有加强框架，因此获得了提高强度的效果。此外，硅单晶膜的主面是从属于{100}面或{111}面的任何晶格面倾斜3〜5°的晶面。

5. 发明授权

US08263498B2 Semiconductor device fabricating method, plasma processing system and storage medium 有权
标题翻译：半导体器件制造方法，等离子体处理系统和存储介质
公开(公告)号：US08263498B2
公开(公告)日：2012-09-11
申请号：US11727403
申请日：2007-03-26
申请人： Ryukichi Shimizu , Akihiro Kikuchi , Toshihiko Shindo
发明人： Ryukichi Shimizu , Akihiro Kikuchi , Toshihiko Shindo
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/31138 , H01L21/76811
摘要： Disclosed is a semiconductor device fabricating method. A substrate is provided thereon with: an inorganic insulating film; a first inorganic sacrifice film stacked on the inorganic insulating film and having components different from those of the inorganic insulating film; a second sacrifice film formed of an inorganic insulative film stacked on the first sacrifice film, wherein a pattern for forming grooves for wiring embedment is formed in the second sacrifice film; and an organic layer including a photoresist film, wherein a pattern for forming holes for wiring embedment is formed in the organic film. According to the present invention, the thickness of the organic layer is set to be greater than the sum of the thicknesses of etch target films, i.e., the insulating film, the first sacrifice film and the second sacrifice film; the etch target films are etched in a selectivity-less manner by using plasma generated from a mixed gas of CF4 gas and CHF3 gas.
摘要翻译：公开了一种半导体器件制造方法。在其上设置有：无机绝缘膜; 第一无机牺牲膜堆叠在无机绝缘膜上并且具有与无机绝缘膜不同的成分; 由第一牺牲膜上的无机绝缘膜形成的第二牺牲膜，其中在所述第二牺牲膜中形成用于形成用于布线嵌入的槽的图案; 以及包括光致抗蚀剂膜的有机层，其中在有机膜中形成用于形成用于布线嵌入的孔的图案。根据本发明，有机层的厚度设定为大于蚀刻目标膜，即绝缘膜，第一牺牲膜和第二牺牲膜的厚度之和; 通过使用由CF 4气体和CHF 3气体的混合气体产生的等离子体，以无选择性的方式蚀刻蚀刻靶膜。

6. 发明申请

US20050142873A1 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20050142873A1
公开(公告)日：2005-06-30
申请号：US11066260
申请日：2005-02-28
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/00 , H01L21/44 , H01L21/683
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译：一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。

7. 发明授权

US08287750B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US08287750B2
公开(公告)日：2012-10-16
申请号：US12686899
申请日：2010-01-13
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译：一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。

8. 发明授权

US07951513B2 Pellicle and method for producing pellicle 有权
标题翻译：防护薄膜组件和防护薄膜制造方法
公开(公告)号：US07951513B2
公开(公告)日：2011-05-31
申请号：US12434021
申请日：2009-05-01
申请人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
发明人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
IPC分类号： G03F1/00 , A47G1/12
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film. The silicon single crystal having such a crystal plane as its principal plane has effective bond density and Young's modulus thereof which are about 40% to about 50% higher than those of a silicon single crystal with orientation, and therefore a cleavage and crack do not easily occur. Moreover, the silicon single crystal has a high chemical resistance such as hydrofluoric acid resistance, and hardly causes an etch pit and void. Accordingly, the present invention can provide a pellicle comprising a pellicle film for EUV having high transmission, and excellent mechanical and chemical stability, as well as having a high yield, and being practical also in cost.
摘要翻译：作为防护薄膜，使用具有晶面作为主面的硅单晶膜，该晶面从属于{100}面或{111}面的任何晶格面倾斜3〜5°。具有作为其主平面的晶面的硅单晶具有有效的键密度和杨氏模量，比具有<100>取向的硅单晶的高约40％至约50％，因此裂纹和裂纹不容易发生。此外，硅单晶具有高耐化学腐蚀性，例如耐氢氟酸性，并且几乎不引起蚀刻坑和空隙。因此，本发明能够提供一种防护薄膜组件，其特征在于，具有透射率高，机械稳定性和化学稳定性优异的EUV用防护薄膜，并且成本高。

9. 发明授权

US07799238B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US07799238B2
公开(公告)日：2010-09-21
申请号：US12433112
申请日：2009-04-30
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译：一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。

10. 发明申请

US20090274962A1 PELLICLE AND METHOD FOR PRODUCING PELLICLE 有权
标题翻译：用于生产油脂的油脂和方法
公开(公告)号：US20090274962A1
公开(公告)日：2009-11-05
申请号：US12434021
申请日：2009-05-01
申请人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
发明人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
IPC分类号： G03F1/00
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film. The silicon single crystal having such a crystal plane as its principal plane has effective bond density and Young's modulus thereof which are about 40% to about 50% higher than those of a silicon single crystal with orientation, and therefore a cleavage and crack do not easily occur. Moreover, the silicon single crystal has a high chemical resistance such as hydrofluoric acid resistance, and hardly causes an etch pit and void. Accordingly, the present invention can provide a pellicle comprising a pellicle film for EUV having high transmission, and excellent mechanical and chemical stability, as well as having a high yield, and being practical also in cost.
摘要翻译：作为防护薄膜，使用具有晶面作为主面的硅单晶膜，该晶面从属于{100}面或{111}面的任何晶格面倾斜3〜5°。具有作为其主平面的晶面的硅单晶具有有效的键密度和杨氏模量，比具有<100>取向的硅单晶的高约40％至约50％，因此裂纹和裂纹不容易发生。此外，硅单晶具有高耐化学腐蚀性，例如耐氢氟酸性，并且几乎不引起蚀刻坑和空隙。因此，本发明能够提供一种防护薄膜组件，其特征在于，具有透射率高，机械稳定性和化学稳定性优异的EUV用防护薄膜，并且成本高。

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