专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090274962A1 PELLICLE AND METHOD FOR PRODUCING PELLICLE 有权
标题翻译：用于生产油脂的油脂和方法
公开(公告)号：US20090274962A1
公开(公告)日：2009-11-05
申请号：US12434021
申请日：2009-05-01
申请人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
发明人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
IPC分类号： G03F1/00
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film. The silicon single crystal having such a crystal plane as its principal plane has effective bond density and Young's modulus thereof which are about 40% to about 50% higher than those of a silicon single crystal with orientation, and therefore a cleavage and crack do not easily occur. Moreover, the silicon single crystal has a high chemical resistance such as hydrofluoric acid resistance, and hardly causes an etch pit and void. Accordingly, the present invention can provide a pellicle comprising a pellicle film for EUV having high transmission, and excellent mechanical and chemical stability, as well as having a high yield, and being practical also in cost.
摘要翻译：作为防护薄膜，使用具有晶面作为主面的硅单晶膜，该晶面从属于{100}面或{111}面的任何晶格面倾斜3〜5°。具有作为其主平面的晶面的硅单晶具有有效的键密度和杨氏模量，比具有<100>取向的硅单晶的高约40％至约50％，因此裂纹和裂纹不容易发生。此外，硅单晶具有高耐化学腐蚀性，例如耐氢氟酸性，并且几乎不引起蚀刻坑和空隙。因此，本发明能够提供一种防护薄膜组件，其特征在于，具有透射率高，机械稳定性和化学稳定性优异的EUV用防护薄膜，并且成本高。

2. 发明授权

US07919217B2 Pellicle and method for producing pellicle 有权
标题翻译：防护薄膜组件和防护薄膜制造方法
公开(公告)号：US07919217B2
公开(公告)日：2011-04-05
申请号：US12466042
申请日：2009-05-14
申请人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
发明人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
IPC分类号： G03F1/00 , A47G1/12
CPC分类号： G03F1/64 , G03F1/62
摘要： A pellicle film of a silicon single crystal film and a base substrate supporting the pellicle film are formed of a single substrate using an SOI substrate. The base substrate is provided with an opening whose ratio in area to an exposure region when a pellicle is used on a photomask (an open area ratio) is 60% or more, and provided with a reinforcing frame in a non-exposure region of the base substrate. Since the pellicle film and the base substrate supporting the pellicle film are formed of the single substrate (an integrated structure), and the base substrate is provided with the reinforcing frame, the effect of increased strength is obtained. Moreover, a principal plane of a silicon single crystal film is a crystal plane inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes.
摘要翻译：使用SOI基板由单个基板形成硅单晶膜的防护薄膜和支撑防护薄膜的基板。基底基板设置有当在光掩模上使用防护薄膜（开放面积比）时的面积与曝光区域的比例为60％以上的开口，并且在该曝光区域的非曝光区域中设置有加强框架基底。由于防护薄膜和支撑防护薄膜的基板由单个基板（一体化结构）形成，并且基底基板设置有加强框架，因此获得了提高强度的效果。此外，硅单晶膜的主面是从属于{100}面或{111}面的任何晶格面倾斜3〜5°的晶面。

3. 发明申请

US20090291372A1 PELLICLE AND METHOD FOR PRODUCING PELLICLE 有权
标题翻译：用于生产油脂的油脂和方法
公开(公告)号：US20090291372A1
公开(公告)日：2009-11-26
申请号：US12466042
申请日：2009-05-14
申请人： Yoshihiro KUBOTA , Shoji Akiyama , Toshihiko Shindo
发明人： Yoshihiro KUBOTA , Shoji Akiyama , Toshihiko Shindo
IPC分类号： G03F1/00
CPC分类号： G03F1/64 , G03F1/62
摘要： A pellicle film of a silicon single crystal film and a base substrate supporting the pellicle film are formed of a single substrate using an SOI substrate. The base substrate is provided with an opening whose ratio in area to an exposure region when a pellicle is used on a photomask (an open area ratio) is 60% or more, and provided with a reinforcing frame in a non-exposure region of the base substrate. Since the pellicle film and the base substrate supporting the pellicle film are formed of the single substrate (an integrated structure), and the base substrate is provided with the reinforcing frame, the effect of increased strength is obtained. Moreover, a principal plane of a silicon single crystal film is a crystal plane inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes.
摘要翻译：使用SOI基板由单个基板形成硅单晶膜的防护薄膜和支撑防护薄膜的基板。基底基板设置有当在光掩模上使用防护薄膜（开放面积比）时的面积与曝光区域的比例为60％以上的开口，并且在该曝光区域的非曝光区域中设置有加强框架基底。由于防护薄膜和支撑防护薄膜的基板由单个基板（一体化结构）形成，并且基底基板设置有加强框架，因此获得了提高强度的效果。此外，硅单晶膜的主面是从属于{100}面或{111}面的任何晶格面倾斜3〜5°的晶面。

4. 发明授权

US07951513B2 Pellicle and method for producing pellicle 有权
标题翻译：防护薄膜组件和防护薄膜制造方法
公开(公告)号：US07951513B2
公开(公告)日：2011-05-31
申请号：US12434021
申请日：2009-05-01
申请人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
发明人： Yoshihiro Kubota , Shoji Akiyama , Toshihiko Shindo
IPC分类号： G03F1/00 , A47G1/12
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film. The silicon single crystal having such a crystal plane as its principal plane has effective bond density and Young's modulus thereof which are about 40% to about 50% higher than those of a silicon single crystal with orientation, and therefore a cleavage and crack do not easily occur. Moreover, the silicon single crystal has a high chemical resistance such as hydrofluoric acid resistance, and hardly causes an etch pit and void. Accordingly, the present invention can provide a pellicle comprising a pellicle film for EUV having high transmission, and excellent mechanical and chemical stability, as well as having a high yield, and being practical also in cost.
摘要翻译：作为防护薄膜，使用具有晶面作为主面的硅单晶膜，该晶面从属于{100}面或{111}面的任何晶格面倾斜3〜5°。具有作为其主平面的晶面的硅单晶具有有效的键密度和杨氏模量，比具有<100>取向的硅单晶的高约40％至约50％，因此裂纹和裂纹不容易发生。此外，硅单晶具有高耐化学腐蚀性，例如耐氢氟酸性，并且几乎不引起蚀刻坑和空隙。因此，本发明能够提供一种防护薄膜组件，其特征在于，具有透射率高，机械稳定性和化学稳定性优异的EUV用防护薄膜，并且成本高。

5. 发明申请

US20130003036A1 PHOTO MASK UNIT COMPRISING A PHOTOMASK AND A PELLICLE AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：包含光电照相机和胶囊的照片遮罩单元及其制造方法
公开(公告)号：US20130003036A1
公开(公告)日：2013-01-03
申请号：US13608716
申请日：2012-09-10
申请人： Shoji Akiyama , Yoshihiro Kubota
发明人： Shoji Akiyama , Yoshihiro Kubota
IPC分类号： G03B27/58 , B23P11/00
CPC分类号： G03F1/24 , G03F1/62 , G03F1/64 , Y10T29/49826
摘要： It is an object of the present invention to provide a photomask unit suitable for forming a microscopic pattern of 32 nm or smaller on a photoresist film using the EUV exposure technique and being able to reliably prevent the flatness of a photomask from being lowered. The photomask unit 1 according to the present invention includes a pellicle membrane 6, a pellicle frame 7 onto one surface of which a region of the pellicle membrane 6 in the vicinity of side portions of the pellicle membrane 6 is fixed, a photomask 2 and a stage 3 onto one surface of which the photomask 2 and the pellicle frame 7 are fixed, and the pellicle frame 7 is fixed onto the stage 3 at a region outside of a region of the stage 3 onto which the photomask 2 is fixed.
摘要翻译：本发明的目的是提供一种适用于使用EUV曝光技术在光致抗蚀剂膜上形成32nm或更小的微观图案并能够可靠地防止光掩模的平坦度降低的光掩模单元。根据本发明的光掩模单元1包括防护薄膜6，防护薄膜框架7，其一个表面上防护薄膜6的侧部附近的防护薄膜6的区域被固定，光掩模2和阶段3在其一个表面上固定光掩模2和防护薄膜组件框架7，并且防护膜框架7在固定有光掩模2的载物台3的区域外部的区域固定到载物台3上。

6. 发明授权

US08268700B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08268700B2
公开(公告)日：2012-09-18
申请号：US12153160
申请日：2008-05-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.
摘要翻译：公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。并且基于化学机械抛光将SOI层的表面抛光10至50nm。可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

7. 发明授权

US08030118B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
公开(公告)号：US08030118B2
公开(公告)日：2011-10-04
申请号：US11976021
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/068 , H01L31/022466 , H01L31/1884 , H01L31/1896 , Y02B10/10 , Y02E10/547
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.

8. 发明申请

US20110104871A1 METHOD FOR MANUFACTURING BONDED SUBSTRATE 有权
标题翻译：制造粘结基板的方法
公开(公告)号：US20110104871A1
公开(公告)日：2011-05-05
申请号：US12934788
申请日：2009-04-10
申请人： Yuji Tobisaka , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Shoji Akiyama , Hiroshi Tamura
发明人： Yuji Tobisaka , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Shoji Akiyama , Hiroshi Tamura
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.
摘要翻译：提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

9. 发明授权

US07879175B2 Method for manufacturing pyrolytic boron nitride composite substrate 有权
标题翻译：制造热解氮化硼复合基板的方法
公开(公告)号：US07879175B2
公开(公告)日：2011-02-01
申请号：US12078276
申请日：2008-03-28
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： B32B38/10
CPC分类号： H01L21/76254 , C23C14/48
摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.
摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理硅基板10，用于表面清洁或表面活化。经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从待转移的硅衬底的体积13。将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。

10. 发明申请

US20100311221A1 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20100311221A1
公开(公告)日：2010-12-09
申请号：US12805582
申请日：2010-08-06
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译：将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。氢离子注入，形成氢离子注入边界12。单晶Si衬底10和低熔点玻璃衬底20结合在一起。键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式