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1. 发明授权

US09121105B2 Process for producing environmentally-friendly steel sheet for container material, environmentally-friendly steel sheet for container material, and laminated and pre-coated steel sheet for container material using the same 有权
标题翻译：用于生产用于容器材料的环保钢板，用于容器材料的环保钢板，以及使用其的容器材料层压和预涂钢板
公开(公告)号：US09121105B2
公开(公告)日：2015-09-01
申请号：US13639322
申请日：2011-04-06
申请人： Nobuo Kadowaki , Hironori Nakayama , Yuji Abe
发明人： Nobuo Kadowaki , Hironori Nakayama , Yuji Abe
IPC分类号： C25D5/36 , C25D5/34 , C25D9/08 , C25D3/54 , C25F1/02
CPC分类号： C25D9/08 , C25D3/54 , C25D5/36 , C25F1/02 , Y10T428/12611
摘要： A method for the cathodic electrocoating of a tin-coated steel sheet in a treatment solution that does not contain any Cr compound, F or nitrite nitrogen. A tin oxide layer that is not subjected to a cathodic electrocoating treatment yet and is arranged on a tin-coated steel sheet is thinned to a specified thickness or less by a cathodic electrocoating treatment in an aqueous solution containing sodium carbonate or sodium hydrogen carbonate or an aqueous sulfuric acid solution immersion treatment, and the tin oxide layer is subjected to a cathodic electrocoating treatment in an aqueous solution of an alkaline metal sulfate containing a zirconium compound having a specified composition. In this manner, a coating film is formed on the tin oxide layer at a specific adhered amount in terms of Zr content.
摘要翻译：在不含任何Cr化合物，F或亚硝酸盐氮的处理溶液中的镀锡钢板的阴极电涂覆方法。未经阴极电涂覆处理而设置在镀锡钢板上的氧化锡层通过阴极电泳处理在含有碳酸钠或碳酸氢钠的水溶液中稀释至规定厚度以下硫酸水溶液浸渍处理，氧化锡层在含有具有规定组成的锆化合物的碱金属硫酸盐水溶液中进行阴极电泳处理。以这种方式，在氧化锡层上以特定的附着量以Zr含量形成涂膜。

2. 发明申请

US20130029176A1 PROCESS FOR PRODUCING ENVIRONMENTALLY-FRIENDLY STEEL SHEET FOR CONTAINER MATERIAL, ENVIRONMENTALLY-FRIENDLY STEEL SHEET FOR CONTAINER MATERIAL, AND LAMINATED AND PRE-COATED STEEL SHEET FOR CONTAINER MATERIAL USING THE SAME 有权
标题翻译：用于容器材料生产环境友好型钢板的方法，用于集装箱材料的环境友好型钢板，以及使用其的容器材料的层压和预涂钢板
公开(公告)号：US20130029176A1
公开(公告)日：2013-01-31
申请号：US13639322
申请日：2011-04-06
申请人： Nobuo Kadowaki , Hironori Nakayama , Yuji Abe
发明人： Nobuo Kadowaki , Hironori Nakayama , Yuji Abe
IPC分类号： B32B15/04 , C25D5/36
CPC分类号： C25D9/08 , C25D3/54 , C25D5/36 , C25F1/02 , Y10T428/12611
摘要： Disclosed is a method for the cathodic electrocoating of a tin-coated steel sheet in a treatment solution that does not contain any Cr compound, F or nitrite nitrogen. In the method, a tin oxide layer that is not subjected to a cathodic electrocoating treatment yet and is arranged on a tin-coated steel sheet is thinned to a specified thickness or less by a cathodic electrocoating treatment in an aqueous solution containing sodium carbonate or sodium hydrogen carbonate or a aqueous sulfuric acid solution immersion treatment, and the tin oxide layer is subjected to a cathodic electrocoating treatment in an aqueous solution of an alkaline metal sulfate containing a zirconium compound having a specified composition. In this manner, a coating film is formed on the tin oxide layer at a specific adhered amount in terms of Zr content. Also disclosed are: a process for producing a chromium-free steel sheet for a container material, which has excellent adhesion to an organic resin film and excellent iron elution resistance after dent impact; and a steel sheet for a container material, which is produced by the process.
摘要翻译：公开了一种镀锡钢板在不含任何Cr化合物，F或亚硝酸盐氮的处理溶液中进行阴极电泳的方法。在该方法中，通过在含有碳酸钠或钠的水溶液中进行阴极电泳处理，将未经阴极电涂覆处理的锡氧化物层设置在镀锡钢板上，变薄至规定厚度以下碳酸氢钠或硫酸水溶液浸渍处理，并且将氧化锡层在含有具有指定组成的锆化合物的碱金属硫酸盐的水溶液中进行阴极电泳处理。以这种方式，在氧化锡层上以特定的附着量以Zr含量形成涂膜。还公开了一种用于生产用于容器材料的无铬钢板的方法，其对有机树脂膜具有优异的粘合性，并且在凹陷冲击之后具有优异的耐铁洗脱性; 以及通过该方法制造的用于容器材料的钢板。

3. 发明申请

US20150048384A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150048384A1
公开(公告)日：2015-02-19
申请号：US14387727
申请日：2013-02-26
申请人： Rina Tanaka , Akihiko Furukawa , Masayuki Imaizumi , Yuji Abe
发明人： Rina Tanaka , Akihiko Furukawa , Masayuki Imaizumi , Yuji Abe
IPC分类号： H01L29/16 , H01L29/47 , H01L29/872
CPC分类号： H01L29/1608 , H01L29/0619 , H01L29/36 , H01L29/47 , H01L29/6606 , H01L29/872
摘要： In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode.
摘要翻译：在使用宽带隙半导体的JBS二极管中，宽带隙半导体具有大的内置电压，这有时使pn二极管部分导通困难，导致不能充分确保对浪涌电流的抵抗力的问题。为了解决这个问题，在宽带隙JBS二极管中，pn二极管的pn结远离肖特基电极形成，阱区形成为在远离肖特基电极。

4. 发明授权

US08443581B2 Method and apparatus for producing optical fiber 有权
标题翻译：光纤制造方法及装置
公开(公告)号：US08443581B2
公开(公告)日：2013-05-21
申请号：US13125014
申请日：2009-10-19
申请人： Naruki Koshimizu , Yuji Abe , Toshimi Habasaki , Tetsuya Hayashi
发明人： Naruki Koshimizu , Yuji Abe , Toshimi Habasaki , Tetsuya Hayashi
IPC分类号： D02G3/22
CPC分类号： G02B6/02285 , B65H51/10 , B65H59/385 , B65H59/40 , B65H2701/32
摘要： An optical fiber producing method and apparatus for producing an optical fiber in which, in a path where an optical fiber is reeled out from a supply bobbin, taken up by take-up means, and wound by a winding bobbin, twists are alternately imparted to the optical fiber by a twist imparting portion. A zone where a high tension load is allowed to be applied to the optical fiber without affecting winding tension of the winding bobbin is disposed, a twist is imparted in the zone, and, when tension immediately before the twist imparting portion is indicated by T (g), a free path length is indicated by L, a twisting amount is indicated by R (turns/m), and a and b are constants, the tension and free path length by which the twisting amount R approximated by “R=a×T×Lb” is made “2” or more are set.
摘要翻译：一种光纤的制造方法及其制造方法，其特征在于，在将光纤从供给线轴卷出的路径中，由卷取机构卷绕并卷绕在卷取筒管上，光纤通过扭曲赋予部分。在不影响卷绕筒管的卷绕张力的情况下，设置能够对光纤施加高张力负荷的区域，在该区域内施加扭曲，并且在扭曲赋予部分之前的张力被T（ g），自由路径长度用L表示，扭转量由R（匝数/ m）表示，a和b是常数，由R = a近似的扭转量R的张力和自由路径长度 ×T×Lb“为”2“以上。

5. 发明授权

US08378674B2 Magnetic field detection device 有权
标题翻译：磁场检测装置
公开(公告)号：US08378674B2
公开(公告)日：2013-02-19
申请号：US12601098
申请日：2008-05-27
申请人： Taisuke Furukawa , Takeharu Kuroiwa , Shingo Tomohisa , Takashi Takenaga , Masakazu Taki , Hiroshi Takada , Yuji Abe
发明人： Taisuke Furukawa , Takeharu Kuroiwa , Shingo Tomohisa , Takashi Takenaga , Masakazu Taki , Hiroshi Takada , Yuji Abe
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/072 , G01R33/091
摘要： A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.
摘要翻译：一种磁场检测装置，包括用于调整施加到磁阻元件的磁场的磁体（磁通量）。平面图中的基板上磁体的形状在一端部侧呈锥形，在与一端部相反的另一端部侧呈大致漏斗状，另一端部宽度大于一端部并且在输出侧端部的前方配置有磁阻元件。在基板上的磁性体中，锥形部分的轮廓不像漏斗那样呈直线状，而是具有弯曲形状，其中第一弯曲部分以柔和曲率向外突出，第二弯曲部分向内突出，曲率类似于第一弯曲部分的连续形成。

6. 发明申请

US20110003079A1 PROCESSES FOR PREPARING COATED PAPERS 审中-公开
标题翻译：制备涂布纸的方法
公开(公告)号：US20110003079A1
公开(公告)日：2011-01-06
申请号：US12920960
申请日：2009-02-04
申请人： Takehiro Yoshimatsu , Yuji Abe , Daisuke Sakakibara , Hironori Asano
发明人： Takehiro Yoshimatsu , Yuji Abe , Daisuke Sakakibara , Hironori Asano
IPC分类号： B05D3/12 , B05D3/02
CPC分类号： D21H19/36 , D21H19/82 , D21H23/56 , D21H25/14
摘要： An object of the present invention is to provide a process for preparing a high-quality coated paper with high runnability while preventing damage to the elastic roll surface of the soft calender encountered during high-speed operation. The present invention provides a process for preparing a coated paper, comprising the steps of: making a base paper; applying a coating solution containing a pigment and an adhesive on the base paper to form one or more pigment coating layers; and surface-treating the pigment coating layers by a soft calender, said papermaking and coating steps being performed at an operating speed of 1300 m/min; wherein said surface-treating step comprises treating the outermost one of the pigment coating layers using a soft calender comprising a metallic roll and an elastic roll with at least two or more nips and wherein the elastic roll has a Shore D hardness of 90-96 and the metallic roll surface temperature at the first nip is less than 130° C.
摘要翻译：本发明的目的是提供一种制备高运行性能的高质量涂布纸的方法，同时防止在高速操作期间遇到的软压光机的弹性辊表面的损坏。本发明提供一种制备涂布纸的方法，包括以下步骤：制备原纸; 在原纸上涂布含有颜料和粘合剂的涂布溶液以形成一个或多个颜料涂层; 并通过软压光机对颜料涂层进行表面处理，所述造纸和涂布步骤以1300m / min的操作速度进行; 其中所述表面处理步骤包括使用包含金属辊和具有至少两个或更多个胶合的弹性辊的软压光机处理最外面的一个颜料涂层，并且其中弹性辊具有90-96的肖氏D硬度和第一辊隙处的金属辊表面温度低于130℃

7. 发明申请

US20100129991A1 NITRIDE SEMICONDUCTOR DEVICE HAVING A SILICON-CONTAINING LAYER AND MANUFACTURING METHOD THEREOF 有权
标题翻译：具有含硅层的氮化物半导体器件及其制造方法
公开(公告)号：US20100129991A1
公开(公告)日：2010-05-27
申请号：US12641421
申请日：2009-12-18
申请人： Katsuomi SHIOZAWA , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
发明人： Katsuomi SHIOZAWA , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
IPC分类号： H01L21/20
CPC分类号： H01L33/40 , H01L33/32
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译：提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。氮化物半导体器件包括形成半导体元件的n型Ga-N衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（2）由不同于氮化物半导体并且包含硅的材料构成。

8. 发明授权

US07683398B2 Nitride semiconductor device having a silicon-containing connection layer and manufacturing method thereof 有权
标题翻译：具有含硅连接层的氮化物半导体器件及其制造方法
公开(公告)号：US07683398B2
公开(公告)日：2010-03-23
申请号：US11681235
申请日：2007-03-02
申请人： Katsuomi Shiozawa , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
发明人： Katsuomi Shiozawa , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
IPC分类号： H01L31/072 , H01L29/24 , H01L29/06
CPC分类号： H01L33/40 , H01L33/32
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译：提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。氮化物半导体器件包括在其上形成半导体元件的n型GaN衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（20）由除氮化物半导体之外并且包含硅的材料构成。

9. 发明授权

US5274660A Semiconductor device and method of making it 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5274660A
公开(公告)日：1993-12-28
申请号：US946110
申请日：1992-09-17
申请人： Yuji Abe
发明人： Yuji Abe
IPC分类号： H01S5/00 , H01S5/12 , H01S5/125 , H01S5/323 , H01S3/08
CPC分类号： H01S5/12 , H01S5/1225 , H01S5/125 , H01S5/32391
摘要： A semiconductor laser includes an active layer and a cladding layer disposed on the active layer and made of a semiconductor material having a larger energy band than the material of the active layer. A diffraction grating layer is disposed within the cladding layer close to the active layer. The diffraction grating layer has a multi-layer structure including a stack of sub-layers of a plurality of semiconductor materials which can be selectively etched. An optical resonator is formed by the active layer, the cladding layer, and first and second cladding layers sandwiching the active layer. The diffraction grating layer includes a portion in which the number of the sub-layers in different from the number of the sub-layers elsewhere whereby different coupling coefficients are present along the axial direction of the optical resonator.

10. 发明授权

US5036372A Heterojunction avalanche transistor 失效
标题翻译：异质结雪崩晶体管
公开(公告)号：US5036372A
公开(公告)日：1991-07-30
申请号：US579681
申请日：1990-09-10
申请人： Toshiyuki Ohishi , Yuji Abe , Hiroshi Sugimoto , Ken-ichi Ohisuka , Teruhito Matsui
发明人： Toshiyuki Ohishi , Yuji Abe , Hiroshi Sugimoto , Ken-ichi Ohisuka , Teruhito Matsui
IPC分类号： H01L29/68 , H01L29/205 , H01L29/73 , H01L29/732
CPC分类号： H01L29/7327 , H01L29/7313
摘要： An avalanche transistor has a heterojunction emitter-base junction. The avalanche transistor includes a spacer layer provided between an emitter layer and a base layer. The spacer layer has an energy band gap between that of the base layer and that of the emitter layer, a carrier concentration lower than that of the base layer, and a thickness so that the whole spacer layer becomes a depletion layer at thermal equillibrium so that a neutral region is produced in the spacer layer at a voltage lower than the threshold voltage of the emitter-base junction. Thus, the same element is both bistable with the base current as a parameter and has an S-shaped negative differential resistance with the base voltage as a parameter.
摘要翻译：雪崩晶体管具有异质结发射极 - 基极结。雪崩晶体管包括设置在发射极层和基极层之间的间隔层。间隔层在基底层和发射极层之间的能带隙，载流子浓度低于基底层的载流子浓度和厚度，使得整个间隔层成为热平衡的耗尽层，使得在间隔层中以低于发射极 - 基极结的阈值电压的电压产生中性区。因此，相同的元件与基极电流作为参数都是双稳态的，并且具有基极电压作为参数的S形负差分电阻。

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