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1. 发明授权

US5435886A Method of plasma etching 失效
标题翻译：等离子体蚀刻方法
公开(公告)号：US5435886A
公开(公告)日：1995-07-25
申请号：US247405
申请日：1994-05-23
申请人： Nobuo Fujiwara , Takahiro Maruyama , Kenji Kawai , Takahiro Hoshiko
发明人： Nobuo Fujiwara , Takahiro Maruyama , Kenji Kawai , Takahiro Hoshiko
IPC分类号： C23F4/00 , H01J37/02 , H01J37/32 , H01L21/302 , H01L21/3065 , B44C1/22
CPC分类号： H01J37/32623 , H01J37/026 , H01J37/32192 , H01J37/32678 , H01J37/32706 , H01J2237/0044 , H01J2237/3347
摘要： A method of electron cyclotron resonance plasma etching including generating a constant plasma in a gas in a chamber containing a semiconductor wafer by supplying microwave energy to the chamber continuously and applying a pulsed direct current bias to the semiconductor wafer, wherein the pulsed bias has a period substantially equal to a time constant determined by the capacitance of the semiconductor wafer and the resistance of an ion sheath at the surface of the semiconductor wafer.
摘要翻译：一种电子回旋共振等离子体蚀刻方法，其包括通过向所述腔室连续供给微波能量并向所述半导体晶片施加脉冲直流偏压，在包含半导体晶片的腔室中的气体中产生恒定的等离子体，其中所述脉冲偏压具有周期基本上等于由半导体晶片的电容和离子鞘在半导体晶片表面的电阻确定的时间常数。

2. 发明授权

US4982138A Semiconductor wafer treating device utilizing a plasma 失效
标题翻译：利用等离子体的半导体晶片处理装置
公开(公告)号：US4982138A
公开(公告)日：1991-01-01
申请号：US277640
申请日：1988-11-29
申请人： Nobuo Fujiwara , Kenji Kawai , Moriaki Akazawa , Teruo Shibano , Tomoaki Ishida , Kyusaku Nishioka
发明人： Nobuo Fujiwara , Kenji Kawai , Moriaki Akazawa , Teruo Shibano , Tomoaki Ishida , Kyusaku Nishioka
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31 , H05H1/46
CPC分类号： H01J37/32678
摘要： A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.
摘要翻译：利用由电子回旋共振（ECR）引起的气体放电产生的等离子体的晶片处理装置包括晶片处理室和等离子体发生室，用于向等离子体发生室供给微波能量的微波电源和围绕该等离子体产生室在其中产生最小的B场。通过电子回旋共振在等离子体发生室中产生的等离子体由线圈产生的最小B场稳定地限制在其中。因此，提高等离子体发生室中的等离子体的密度和稳定性。等离子体发生室中的等离子体沿着磁力的发散线被输送到晶片处理室中的晶片。最小B场产生线圈的实例包括Ioffe棒，棒球线圈和阴阳线圈。

3. 发明授权

US4915979A Semiconductor wafer treating device utilizing ECR plasma 失效
标题翻译：采用ECR等离子体的半导体晶片处理装置
公开(公告)号：US4915979A
公开(公告)日：1990-04-10
申请号：US279016
申请日：1988-12-02
申请人： Tomoaki Ishida , Nobuo Fujiwara , Kyusaku Nishioka , Moriaki Akazawa , Teruo Shibano , Kenji Kawai
发明人： Tomoaki Ishida , Nobuo Fujiwara , Kyusaku Nishioka , Moriaki Akazawa , Teruo Shibano , Kenji Kawai
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32357
摘要： A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.
摘要翻译：公开了一种利用电子回旋共振（ECR）产生的气体等离子体的半导体晶片处理装置，包括晶片处理室和与晶片处理室连通的等离子体产生室。将频率不大于2GHz且不小于100MHz的微波能量提供给由螺线管线圈包围的等离子体发生室，并在等离子体发生室和晶片处理室中产生磁场以产生ECR 并将由ECR产生的等离子体输送到晶片。因此，优化了在等离子体发生室中的电子回旋共振中在螺旋路径中移动的电子的拉莫半径使得等离子体在空间上均匀。因此，提高了晶片上的处理的均匀性。

4. 发明授权

US4877509A Semiconductor wafer treating apparatus utilizing a plasma 失效
标题翻译：利用等离子体的半导体晶片处理装置
公开(公告)号：US4877509A
公开(公告)日：1989-10-31
申请号：US269688
申请日：1988-11-10
申请人： Toshiaki Ogawa , Nobuo Fujiwara , Kenji Kawai , Teruo Shibano , Hiroshi Morita , Kyusaku Nishioka
发明人： Toshiaki Ogawa , Nobuo Fujiwara , Kenji Kawai , Teruo Shibano , Hiroshi Morita , Kyusaku Nishioka
IPC分类号： H01L21/302 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32293 , C23C16/511 , H01J37/32192 , H01J37/32678
摘要： An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.
摘要翻译：公开了一种利用电子回旋共振（ECR）产生的等离子体处理半导体晶片的装置，其中通过矩形波导，矩形到圆形微波转换器和圆偏振转换器将微波提供给等离子体发生室。偏振转换器可以包括介电材料的相移板或设置在金属圆筒形状的圆形波导中的导电材料。在微波的一个周期内，通过在TE11模式一周内旋转微波的电场方向，将由矩形到圆形的微波转换器提供的循环TE11模式的微波变换成圆偏振的微波。因此，供给到等离子体发生室的微波的电场强度在等离子体发生室中沿着圆周方向的时间平均化，使得其中等离子体产生的密度在空间上均匀。在等离子体发生室中产生的空间均匀分布的等离子体被输送到晶片处理室中的晶片，以对晶片进行处理。

5. 发明授权

US5474615A Method for cleaning semiconductor devices 失效
标题翻译：半导体器件清洗方法
公开(公告)号：US5474615A
公开(公告)日：1995-12-12
申请号：US993514
申请日：1992-12-17
申请人： Tomoaki Ishida , Kenji Kawai , Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa
发明人： Tomoaki Ishida , Kenji Kawai , Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa
IPC分类号： H01L21/302 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/3065 , C03C15/00
CPC分类号： H01L21/02046 , H01L21/02057 , H01L21/02071 , H01L21/67028 , Y10S438/963
摘要： A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active. Accordingly, a velocity vector in a horizontal direction of the reactive ions becomes larger, which enables efficient removal or change in quality of the contaminants sticking on the sidewalls of the pattern or the trench.
摘要翻译：公开了一种清洁半导体器件的方法，该半导体器件去除或转移粘附在图案或沟槽的侧壁上的污染物。在其上形成图案或沟槽的被处理基板位于处理容器中。与粘附在图案或沟槽的侧壁上的污染物反应以产生去除或改变污染物的活性离子的反应气体被引入处理容器中。反应气体的等离子体通过电子回旋共振产生，以便从引入处理容器的反应气体产生活性离子。根据该方法，等离子体中的反应离子的温度变高，结果是等离子体中的活性离子的运动变得更加活跃。因此，反应离子的水平方向的速度矢量变大，能够有效地去除或污染物附着在图案或沟槽的侧壁上的质量的变化。

6. 发明授权

US08754471B2 Semiconductor device having gate in recess 有权
标题翻译：半导体器件具有凹槽中的栅极
公开(公告)号：US08754471B2
公开(公告)日：2014-06-17
申请号：US13040610
申请日：2011-03-04
申请人： Toshiaki Iwamatsu , Kozo Ishikawa , Masashi Kitazawa , Kiyoshi Hayashi , Takahiro Maruyama , Masaaki Shinohara , Kenji Kawai
发明人： Toshiaki Iwamatsu , Kozo Ishikawa , Masashi Kitazawa , Kiyoshi Hayashi , Takahiro Maruyama , Masaaki Shinohara , Kenji Kawai
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L29/66 , H01L29/78
CPC分类号： H01L29/66621 , H01L21/28 , H01L29/66795 , H01L29/772 , H01L29/7834 , Y02E10/50
摘要： There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.
摘要翻译：提供了可以在不劣化特性的情况下小型化的半导体器件及其制造方法。半导体器件包括：主表面，源极区域和漏极区域在主表面彼此分离形成的半导体衬底;形成在源区域和漏极区域之间的主表面上的栅电极层;第一形成为与源极区域的表面接触的导电层，以及形成为与漏极区域的表面接触的第二导电层。在主表面上形成凹部，以便通过栅极电极层下面的部分从第一导电层和源极区域之间的接触区域延伸到第二导电层和漏极区域之间的接触区域。

7. 发明授权

US07989283B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07989283B2
公开(公告)日：2011-08-02
申请号：US12896391
申请日：2010-10-01
申请人： Shinichi Yamanari , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
发明人： Shinichi Yamanari , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.
摘要翻译：提供半导体器件的制造方法，用于提高包括具有高介电常数栅极绝缘体和金属栅电极的MISFET的半导体器件的可靠性。作为主要成分，含有Hf，La，O的第一含Hf绝缘膜形成为n型MISFET的高介电常数栅极绝缘体。作为主要成分，含有Hf，Al，O的第二含Hf绝缘膜形成为p型MISFET的高介电常数栅极绝缘体。然后，通过干蚀刻形成金属膜和硅膜并图案化，从而形成第一和第二栅电极。此后，通过湿蚀刻除去未被第一和第二栅电极覆盖的第一和第二Hf含绝缘膜的部分。此时，进行用不含氢氟酸的酸溶液的湿法和用碱性溶液的另一种湿法，然后进行用含有氢氟酸的酸溶液进一步的湿法。

8. 发明授权

US5223085A Plasma etching method with enhanced anisotropic property and apparatus thereof 失效
标题翻译：具有增强的等离子体物质的等离子体蚀刻方法及其装置
公开(公告)号：US5223085A
公开(公告)日：1993-06-29
申请号：US653634
申请日：1991-02-12
申请人： Kenji Kawai , Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita
发明人： Kenji Kawai , Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H01L21/3213
CPC分类号： H01L21/32137 , C23F4/00 , H01L21/32136
摘要： A method for anisotropically etching a substrate to be treated using plasma of a reactive gas produced by electron cyclotron resonance is disclosed. A substrate to be treated is located in a processing container, and a chlorine gas and a hydrogen chloride gas are introduced into the processing container. From the mixture of the chlorine and hydrogen chloride gases introduced into the processing container, plasma of the mixed gas is produced by electron cyclotron resonance. According to this method, the energy of the plasma of chlorine is taken by the plasma of H.sup.+, which results in a decrease in kinetic energy of the chlorine. As a result, the plasma of chlorine impinges vertically to the substrate to be treated along the sheath electric field. Consequently, etching with strong anisotropic property is enabled.
摘要翻译：公开了一种通过电子回旋共振产生的反应气体的等离子体各向异性蚀刻待处理的基板的方法。待处理的基板位于处理容器中，并且将氯气和氯化氢气体引入处理容器中。从引入处理容器的氯气和氯化氢气体的混合物中，通过电子回旋共振产生混合气体的等离子体。根据这种方法，氯的等离子体的能量由H +的等离子体摄取，这导致氯的动能降低。结果，氯的等离子体沿护套电场垂直地撞击待处理的基板。因此，能够进行强烈的各向异性特性的蚀刻。

9. 发明授权

US5147465A Method of cleaning a surface 失效
标题翻译：清洁表面的方法
公开(公告)号：US5147465A
公开(公告)日：1992-09-15
申请号：US605427
申请日：1990-10-30
申请人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
发明人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
IPC分类号： H01L21/302 , B08B7/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/3065
CPC分类号： H01L21/67028 , B08B7/0035 , H01J37/32357
摘要： A method of cleaning a surface including generating helium ions, electrons, and metastable helium by exciting helium gas, separating said metastable helium from the helium ions and electrons, and exposing a substance to be processed on the surface of which foreign matter is present to the metastable helium separated from the helium ions and electrons to remove the foreign matter from the substance.
摘要翻译：一种清洁表面的方法，包括通过激发氦气产生氦离子，电子和亚稳态氦，将所述亚稳态氦与氦离子和电子分离，并将待处理物质暴露于其外部物质的表面上从氦离子和电子分离的亚稳态氦从物质中除去异物。

10. 发明申请

US20110081753A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110081753A1
公开(公告)日：2011-04-07
申请号：US12896391
申请日：2010-10-01
申请人： Shinichi YAMANARI , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
发明人： Shinichi YAMANARI , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.
摘要翻译：提供半导体器件的制造方法，用于提高包括具有高介电常数栅极绝缘体和金属栅电极的MISFET的半导体器件的可靠性。作为主要成分，含有Hf，La，O的第一含Hf绝缘膜形成为n型MISFET的高介电常数栅极绝缘体。作为主要成分，含有Hf，Al，O的第二含Hf绝缘膜形成为p型MISFET的高介电常数栅极绝缘体。然后，通过干蚀刻形成金属膜和硅膜并图案化，从而形成第一和第二栅电极。此后，通过湿蚀刻除去未被第一和第二栅电极覆盖的第一和第二Hf含绝缘膜的部分。此时，进行用不含氢氟酸的酸溶液的湿法和用碱性溶液的另一种湿法，然后进行用含有氢氟酸的酸溶液进一步的湿法。

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