会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Semiconductor wafer treating apparatus utilizing a plasma
    • 利用等离子体的半导体晶片处理装置
    • US4877509A
    • 1989-10-31
    • US269688
    • 1988-11-10
    • Toshiaki OgawaNobuo FujiwaraKenji KawaiTeruo ShibanoHiroshi MoritaKyusaku Nishioka
    • Toshiaki OgawaNobuo FujiwaraKenji KawaiTeruo ShibanoHiroshi MoritaKyusaku Nishioka
    • H01L21/302C23C16/511H01J37/32H01L21/205H01L21/3065H01L21/31
    • H01J37/32293C23C16/511H01J37/32192H01J37/32678
    • An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.
    • 公开了一种利用电子回旋共振(ECR)产生的等离子体处理半导体晶片的装置,其中通过矩形波导,矩形到圆形微波转换器和圆偏振转换器将微波提供给等离子体发生室。 偏振转换器可以包括介电材料的相移板或设置在金属圆筒形状的圆形波导中的导电材料。 在微波的一个周期内,通过在TE11模式一周内旋转微波的电场方向,将由矩形到圆形的微波转换器提供的循环TE11模式的微波变换成圆偏振的微波。 因此,供给到等离子体发生室的微波的电场强度在等离子体发生室中沿着圆周方向的时间平均化,使得其中等离子体产生的密度在空间上均匀。 在等离子体发生室中产生的空间均匀分布的等离子体被输送到晶片处理室中的晶片,以对晶片进行处理。
    • 8. 发明授权
    • Fluorescent X-ray analysis apparatus
    • 荧光X射线分析仪
    • US06885726B2
    • 2005-04-26
    • US10419964
    • 2003-04-22
    • Yasushi UeharaTeruo Shibano
    • Yasushi UeharaTeruo Shibano
    • G01N23/223G21K1/06
    • G01N23/223G01N2223/076G21K1/06
    • A fluorescent X-ray analysis apparatus includes: an X-ray generation source for radiating a beam of primary X-rays; spectroscopic elements circularly arranged so that their inner surfaces describe a circle centered on an optical axis of the beam of primary X-rays for monochromatizing the beam of primary X-rays and condensing the beam on a surface of an irradiation object; a spectroscopic element position adjuster for adjusting the positions of the spectroscopic elements; secondary X-rays detector for detecting secondary X-rays radiated from the surface of the irradiation object irradiated with the monochromatized beam of primary X-rays; a secondary X-ray detector position adjuster adjusting the position of the secondary X-ray detector; an irradiation object surface position detector detecting the position of the surface of the irradiation object; and a controller adjusting the positions of the spectroscopic elements through the spectroscopic element position adjuster to condense the monochromatized beam of primary X-rays on the surface of the irradiation object, on the basis of the position of the surface of the irradiation object detected by the irradiation object surface position detector.
    • 荧光X射线分析装置包括:用于照射初级X射线束的X射线产生源; 分光元件循环布置,使得它们的内表面描述以主X射线束的光轴为中心的圆,用于单色初级X射线束并将束聚焦在照射物体的表面上; 分光元件位置调节器,用于调节光谱元件的位置; 二次X射线检测器,用于检测从被照射的原始X射线的单色光束照射的照射物体的表面辐射的次级X射线; 辅助X射线检测器位置调节器,调节次X射线检测器的位置; 照射物体表面位置检测器,检测被照射物体的表面的位置; 以及控制器,其通过分光元件位置调整器调整分光元件的位置,以基于被照射物体的表面检测的照射物体的表面的位置,将照射物体的表面上的一次X射线的单色化光束聚集 照射物体表面位置检测器。