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1. 发明申请

US20090221259A1 ACTIVE MIXER CIRCUIT AND A RECEIVER CIRCUIT OR A MILLIMETER-WAVE COMMUNICATION UNIT USING IT 有权
标题翻译：主动混频器电路和接收器电路或使用其的微波通信单元
公开(公告)号：US20090221259A1
公开(公告)日：2009-09-03
申请号：US12370159
申请日：2009-02-12
申请人： Nobuhiro SHIRAMIZU , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
发明人： Nobuhiro SHIRAMIZU , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
IPC分类号： H04B1/16
CPC分类号： H04B1/28 , H03D7/1433 , H03D7/1441 , H03D7/1458 , H03D2200/0023 , H03D2200/0043
摘要： The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.
摘要翻译：本发明提供一种半导体集成电路，包括以低电压，低噪声和低功耗工作的有源混频器电路。它包括跨导放大器，变压器和乘法器，连接跨导放大器和乘法器之间的变压器，并且相对于变压器内部的直流电流在跨导放大器和乘法器之间分离。此外，跨导放大器和乘法器中的每一个由在电源电压端子和接地端子之间单层堆叠的晶体管构成。

2. 发明授权

US08121579B2 Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it 有权
标题翻译：有源混频器电路和接收器电路或使用它的毫米波通信单元
公开(公告)号：US08121579B2
公开(公告)日：2012-02-21
申请号：US12370159
申请日：2009-02-12
申请人： Nobuhiro Shiramizu , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
发明人： Nobuhiro Shiramizu , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
IPC分类号： H04B1/16 , H04B1/26 , H03D7/16
CPC分类号： H04B1/28 , H03D7/1433 , H03D7/1441 , H03D7/1458 , H03D2200/0023 , H03D2200/0043
摘要： The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.
摘要翻译：本发明提供一种半导体集成电路，包括以低电压，低噪声和低功耗工作的有源混频器电路。它包括跨导放大器，变压器和乘法器，连接跨导放大器和乘法器之间的变压器，并且相对于变压器内部的直流电流在跨导放大器和乘法器之间分离。此外，跨导放大器和乘法器中的每一个由在电源电压端子和接地端子之间单层堆叠的晶体管构成。

3. 发明授权

US08212615B2 Variable-gain amplifier circuit and wireless communication device integrated circuit equipped therewith 有权
标题翻译：可变增益放大器电路和配备其的无线通信设备集成电路
公开(公告)号：US08212615B2
公开(公告)日：2012-07-03
申请号：US12765010
申请日：2010-04-22
申请人： Toru Masuda , Nobuhiro Shiramizu , Takahiro Nakamura , Katsuyoshi Washio
发明人： Toru Masuda , Nobuhiro Shiramizu , Takahiro Nakamura , Katsuyoshi Washio
IPC分类号： H03F3/45 , H03F3/191
CPC分类号： H03G3/3052
摘要： There is disclosed a variable-gain amplifier circuit that operates on a low voltage, exhibits low distortion, provides a wide range of variation, and is suitable for use in a low-power-consumption wireless communication system. The variable-gain amplifier circuit is configured so that a variable-load circuit, which includes three reactance function elements and provides a wide range of impedance variation, is connected to a conductor circuit whose output terminal generates a positive-phase output current proportional to conductance with respect to an input voltage.
摘要翻译：公开了一种在低电压下操作的可变增益放大器电路，具有低失真，提供宽范围的变化，并且适用于低功耗无线通信系统。可变增益放大器电路被配置为使得包括三个电抗功能元件并提供宽范围的阻抗变化的可变负载电路连接到其输出端产生与电导成比例的正相输出电流的导体电路相对于输入电压。

4. 发明申请

US20100271122A1 VARIABLE-GAIN AMPLIFIER CIRCUIT AND WIRELESS COMMUNICATION DEVICE INTEGRATED CIRCUIT EQUIPPED THEREWITH 有权
标题翻译：可变增益放大器电路和无线通信设备集成电路
公开(公告)号：US20100271122A1
公开(公告)日：2010-10-28
申请号：US12765010
申请日：2010-04-22
申请人： Toru MASUDA , Nobuhiro Shiramizu , Takahiro Nakamura , Katsuyoshi Washio
发明人： Toru MASUDA , Nobuhiro Shiramizu , Takahiro Nakamura , Katsuyoshi Washio
IPC分类号： H03G3/20
CPC分类号： H03G3/3052
摘要： There is disclosed a variable-gain amplifier circuit that operates on a low voltage, exhibits low distortion, provides a wide range of variation, and is suitable for use in a low-power-consumption wireless communication system. The variable-gain amplifier circuit is configured so that a variable-load circuit, which includes three reactance function elements and provides a wide range of impedance variation, is connected to a conductor circuit whose output terminal generates a positive-phase output current proportional to conductance with respect to an input voltage.
摘要翻译：公开了一种在低电压下操作的可变增益放大器电路，具有低失真，提供宽范围的变化，并且适用于低功耗无线通信系统。可变增益放大器电路被配置为使得包括三个电抗功能元件并提供宽范围的阻抗变化的可变负载电路连接到其输出端产生与电导成比例的正相输出电流的导体电路相对于输入电压。

5. 发明授权

US06974977B2 Heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US06974977B2
公开(公告)日：2005-12-13
申请号：US10457428
申请日：2003-06-10
申请人： Katsuyoshi Washio , Reiko Hayami , Hiromi Shimamoto , Masao Kondo , Katsuya Oda , Eiji Oue , Masamichi Tanabe
发明人： Katsuyoshi Washio , Reiko Hayami , Hiromi Shimamoto , Masao Kondo , Katsuya Oda , Eiji Oue , Masamichi Tanabe
IPC分类号： H01L29/72 , G02B6/42 , H01L21/331 , H01L29/737 , H03F3/45
CPC分类号： H01L29/66242 , G02B6/4251 , G02B6/4274 , H01L29/7375 , H01L29/7378 , H03F3/45085 , H03F3/45089 , H03F2200/372 , H03F2203/45311 , H03F2203/45574 , H03F2203/45612 , H03F2203/45652 , H03F2203/45722
摘要： A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with no substantial change of collector current even upon change of collector voltage. It also has less variation than conventional bipolar transistors for the collector current while ensuring high speed properties and high gain. In one example, the band gap in the base region is smaller than the band gap in the emitter and collector regions. The band gap is constant near the junction with the emitter region and decreases toward the junction with the collector region. A single crystal silicon/germanium is a typically used for the base region.
摘要翻译：提供了具有高可靠性和高增益的双极晶体管，并且特别适用于高速运行。双极晶体管以高精度工作，即使在集电极电压变化时也不会对集电极电流产生实质性的变化。与传统的集电极电流双极晶体管相比，它具有较小的变化，同时确保了高速性能和高增益。在一个示例中，基极区域中的带隙小于发射极和集电极区域中的带隙。带隙在与发射极区域的结点附近是恒定的，并且朝着与集电极区域的结点减小。单晶硅/锗通常用于基极区域。

6. 发明授权

US06600178B1 Heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US06600178B1
公开(公告)日：2003-07-29
申请号：US09599741
申请日：2000-06-23
申请人： Katsuyoshi Washio , Reiko Hayami , Hiromi Shimamoto , Masao Kondo , Katsuya Oda , Eiji Oue , Masamichi Tanabe
发明人： Katsuyoshi Washio , Reiko Hayami , Hiromi Shimamoto , Masao Kondo , Katsuya Oda , Eiji Oue , Masamichi Tanabe
IPC分类号： H01L29737
CPC分类号： H01L29/66242 , G02B6/4251 , G02B6/4274 , H01L29/7375 , H01L29/7378 , H03F3/45085 , H03F3/45089 , H03F2200/372 , H03F2203/45311 , H03F2203/45574 , H03F2203/45612 , H03F2203/45652 , H03F2203/45722
摘要： A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with no substantial change of collector current even upon change of collector voltage. It also has less variation than conventional bipolar transistors for the collector current while ensuring high speed properties and high gain. In one example, the band gap in the base region is smaller than the band gap in the emitter and collector regions. The band gap is constant near the junction with the emitter region and decreases toward the junction with the collector region. A single crystal silicon/germanium is a typically used for the base region.
摘要翻译：提供了具有高可靠性和高增益的双极晶体管，并且特别适用于高速运行。双极晶体管以高精度工作，即使在集电极电压变化时也不会对集电极电流产生实质性的变化。与传统的集电极电流双极晶体管相比，它具有较小的变化，同时确保了高速性能和高增益。在一个示例中，基极区域中的带隙小于发射极和集电极区域中的带隙。带隙在与发射极区域的结点附近是恒定的，并且朝着与集电极区域的结点减小。单晶硅/锗通常用于基极区域。

7. 发明授权

US06521974B1 Bipolar transistor and manufacturing method thereof 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US06521974B1
公开(公告)日：2003-02-18
申请号：US09689800
申请日：2000-10-13
申请人： Katsuya Oda , Eiji Ohue , Masao Kondo , Katsuyoshi Washio , Masamichi Tanabe , Hiromi Shimamoto
发明人： Katsuya Oda , Eiji Ohue , Masao Kondo , Katsuyoshi Washio , Masamichi Tanabe , Hiromi Shimamoto
IPC分类号： H01L2970
CPC分类号： H01L29/66287 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made of polycrystal Si—Ge by doping at high concentration, further, a part immediately under the intrinsic base has the same conductive type as that of a collector and in a peripheral part, a single crystal Si—Ge layer having the same conductive type as that of a base is provided between the intrinsic base and a collector layer. Hereby, the reduction of the resistance of the link base between the intrinsic base and the base leading-out electrode and the reduction of capacitance between the collector and the base are simultaneously realized, and a self-aligned bipolar transistor wherein capacitance between an emitter and the base and capacitance between the collector and the base are respectively small, power consumption is small and high speed operation is enabled is acquired.
摘要翻译：根据本发明的双极晶体管具有以下结构：由单晶Si-Ge构成的本征基极和基极引出电极通过高浓度掺杂的由多晶Si-Ge制成的连接基底连接，此外，在本征基底之下的部分具有与集电体相同的导电类型，并且在外围部分中，在本征基极和集电极层之间设置具有与基底相同的导电类型的单晶Si-Ge层。因此，同时实现本征基极与基极引出电极之间的基极的电阻的降低和集电极与基极之间的电容的减小，以及自对准双极晶体管，其中发射极和集电极和基极之间的基极和电容分别小，功耗小，获得高速运行。

8. 发明授权

US06482710B2 Bipolar transistor and manufacting method thereof 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US06482710B2
公开(公告)日：2002-11-19
申请号：US09811559
申请日：2001-03-20
申请人： Katsuya Oda , Eiji Ohue , Masao Kondo , Katsuyoshi Washio , Masamichi Tanabe , Hiromi Shimamoto
发明人： Katsuya Oda , Eiji Ohue , Masao Kondo , Katsuyoshi Washio , Masamichi Tanabe , Hiromi Shimamoto
IPC分类号： H01L21331
CPC分类号： H01L29/66287 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made of polycrystal Si—Ge by doping at high concentration, further, a part immediately under the intrinsic base has the same conductive type as that of a collector and in a peripheral part, a single crystal Si—Ge layer having the same conductive type as that of a base is provided between the intrinsic base and a collector layer. Hereby, the reduction of the resistance of the link base between the intrinsic base and the base leading-out electrode and the reduction of capacitance between the collector and the base are simultaneously realized, and a self-aligned bipolar transistor wherein capacitance between an emitter and the base and capacitance between the collector and the base are respectively small, power consumption is small and high speed operation is enabled is acquired.
摘要翻译：根据本发明的双极晶体管具有以下结构：由单晶Si-Ge构成的本征基极和基极引出电极通过高浓度掺杂的由多晶Si-Ge制成的连接基底连接，此外，在本征基底之下的部分具有与集电体相同的导电类型，并且在外围部分中，在本征基极和集电极层之间设置具有与基底相同的导电类型的单晶Si-Ge层。因此，同时实现本征基极与基极引出电极之间的基极的电阻的降低和集电极与基极之间的电容的减小，以及自对准双极晶体管，其中发射极和集电极和基极之间的基极和电容分别小，功耗小，获得高速运行。

9. 发明授权

US07098740B2 Radio frequency power amplifier and communication system 失效
标题翻译：射频功率放大器和通信系统
公开(公告)号：US07098740B2
公开(公告)日：2006-08-29
申请号：US10688976
申请日：2003-10-21
申请人： Masao Kondo , Toru Masuda , Katsuyoshi Washio
发明人： Masao Kondo , Toru Masuda , Katsuyoshi Washio
IPC分类号： H03F3/68
CPC分类号： H03F3/211 , H03F1/302 , H03F2200/372 , H03F2203/21178
摘要： There is provided not only a radio frequency power amplifier using an SiGe HBT subject to a little amplification distortion, but also a communication system using the same. A conventional radio frequency power amplifier provides base bias paths of transistors Q1 through QN (SiGe HBT) with bias resistors R11 through R1N having resistance values three to five times higher than those of a ballast resistor attached to each transistor's base. A coil LB is provided in parallel with the bias resistor as a means for compensating a voltage drop due to direct current component IDC flowing through the bias resistor. Addition of the bias resistor suppresses non-linearity of low-frequency variations in an output current. Addition of the coil compensates for voltage drop. Accordingly, the maximum linear output power can be improved. As a result, it is possible to provide the power amplifier subject to a little amplification distortion within a wide output range.
摘要翻译：不仅提供使用SiGe HBT的射频功率放大器，而且具有很小的放大失真，而且还提供了使用它的通信系统。传统的射频功率放大器提供具有偏置电阻器R11至R11的晶体管Q 1至Q N（SiGe HBT）的基极偏置路径， SUB> 1N 的电阻值是连接到每个晶体管基极的镇流电阻的三到五倍。作为用于补偿流过偏置电阻器的直流分量I DC的电压降的装置，设置有与偏压电阻并联的线圈L B B。增加偏置电阻抑制输出电流中低频变化的非线性。线圈的添加补偿电压降。因此，可以提高最大线性输出功率。结果，可以在宽的输出范围内提供具有小的放大失真的功率放大器。

10. 发明授权

US06785477B1 Optical receiver using variable negative-capacitance circuit 失效
标题翻译：光接收机采用可变负电容电路
公开(公告)号：US06785477B1
公开(公告)日：2004-08-31
申请号：US09646509
申请日：2000-09-19
申请人： Toru Masuda , Katsuyoshi Washio , Taizo Yoshikawa , Eiji Ohue , Kenichi Ohhata
发明人： Toru Masuda , Katsuyoshi Washio , Taizo Yoshikawa , Eiji Ohue , Kenichi Ohhata
IPC分类号： H04B1006
CPC分类号： H04B10/6932 , H03F3/08 , H03F3/082 , H03F3/343 , H03F3/3432 , H03F3/345 , H04B10/6931
摘要： A large time constant is caused due to parasitic capacitance at an anode terminal of a photodetector of an optical receiver. Therefore, an optical receiver wherein a variable negative capacitor mainly including an NPN-type transistor operable at high speed is configured and is connected to the input terminal of a preamplifier to which the output of the photodetector is input so that parasitic capacitance caused in the photodetector and due to packaging is equivalently reduced and the fluctuation of parasitic capacitance caused due to manufacturing dispersion is also compensated is provided.
摘要翻译：由于光接收器的光电检测器的阳极端子处的寄生电容引起大的时间常数。因此，其中主要包括以高速工作的NPN型晶体管的可变负电容器的光接收器被配置并连接到前置放大器的输入端子，输入光电检测器的输出端，使得在光电探测器中产生的寄生电容并且由于封装等效地减少，并且还补偿了由于制造分散引起的寄生电容的波动。

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