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1. 发明授权

US08191611B2 Method for continuous casting of steel and electromagnetic stirrer to be used therefor 有权
标题翻译：用于连续铸造钢和电磁搅拌器的方法
公开(公告)号：US08191611B2
公开(公告)日：2012-06-05
申请号：US13227737
申请日：2011-09-08
申请人： Nobuhiro Okada , Sei Hiraki , Kouji Takatani , Akihiro Yamanaka , Hidetoshi Suwa
发明人： Nobuhiro Okada , Sei Hiraki , Kouji Takatani , Akihiro Yamanaka , Hidetoshi Suwa
IPC分类号： B22D11/115
CPC分类号： B22D11/122 , B22D11/115 , B22D11/1206
摘要： An electromagnetic stirrer for stirring molten steel of the liquid core in a width-wise direction of the slab includes an iron core disposed with its length-wise axis along a width-wise direction of slab, and a plurality of exciting coils wound around the outer circumference of and about a length-wise axis of the iron core, wherein two-phase or three-phase alternating current is passed through the coils. The phases of the current in the exciting coils are distributed to impart a stirring flow to the molten that includes flow from the minor sides to the center of the slab or from one minor side to the other minor side with a reversing flow at predetermined time intervals.
摘要翻译：一种电磁搅拌器，用于搅拌钢芯在板坯的宽度方向上的钢水，包括沿着板坯的宽度方向的长度方向设置的铁芯，以及围绕外部的多个励磁线圈铁心的长度方向的周长和周围，其中两相或三相交流电流通过线圈。分配励磁线圈中的电流的相位以向熔融物施加搅动流，包括从短边到板坯中心的流动或从一个次侧到另一个小侧，以预定时间间隔的反向流动。

2. 发明授权

US08033319B2 Method for continuous casting of steel and electromagnetic stirrer to be used therefor 有权
标题翻译：用于连续铸造钢和电磁搅拌器的方法
公开(公告)号：US08033319B2
公开(公告)日：2011-10-11
申请号：US12913290
申请日：2010-10-27
申请人： Nobuhiro Okada , Sei Hiraki , Kouji Takatani , Akihiro Yamanaka , Hidetoshi Suwa
发明人： Nobuhiro Okada , Sei Hiraki , Kouji Takatani , Akihiro Yamanaka , Hidetoshi Suwa
IPC分类号： B22D11/115
CPC分类号： B22D11/122 , B22D11/115 , B22D11/1206
摘要： Disclosed is a continuous casting in which an electromagnetic stirrer is installed upstream, in the casting direction, of the reduction rolling position of a slab, and in which a slab with a liquid core is reduced in thickness, wherein by imparting a collision flow forming-type stirring and a uni-directional alternating flow forming-type stirring, molten steel with concentrated segregation elements is stirred and diffused in a width-wise direction of slab, whereby a slab stabilized in center segregation qualities can be produced over long-time casting operation. Since the stirring flowing pattern is selectively imparted by means of the same electromagnetic stirrer, it is effective to decrease facility and equipment costs, improve maintainability, and extensively cope with various casting conditions. The continuous casting method stably ensures excellent center segregation qualities over a long time in casting of high-strength steel with high crack susceptibility or steel grade for extremely thick plate product.
摘要翻译：公开了一种连续铸造，其中电磁搅拌器沿铸造方向安装在板坯的压下轧制位置的上游，并且其中具有液芯的板坯的厚度减小，其中通过使冲击流形成 - 单向搅拌和单向交替流动式搅拌，具有浓缩偏析元素的钢水在板坯的宽度方向上搅拌扩散，由此可以通过长时间的铸造操作生产稳定中心偏析品质的板坯。由于通过相同的电磁搅拌器选择性地施加搅拌流动模式，因此降低设备成本和提高维护性以及广泛地应对各种铸造条件是有效的。连续铸造方法在极高的板材产品的高裂纹敏感性或钢级的高强度钢的铸造中，长时间稳定地确保优异的中心偏析性。

3. 发明申请

US20110036533A1 METHOD FOR CONTINUOUS CASTING OF STEEL AND ELECTROMAGNETIC STIRRER TO BE USED THEREFOR 有权
标题翻译：连续铸造钢和电磁搅拌器的方法
公开(公告)号：US20110036533A1
公开(公告)日：2011-02-17
申请号：US12913290
申请日：2010-10-27
申请人： Nobuhiro Okada , Sei Hiraki , Kouji Takatani , Akihiro Yamanaka , Hidetoshi Suwa
发明人： Nobuhiro Okada , Sei Hiraki , Kouji Takatani , Akihiro Yamanaka , Hidetoshi Suwa
IPC分类号： B22D27/02 , B22D11/00
CPC分类号： B22D11/122 , B22D11/115 , B22D11/1206
摘要： Disclosed is a continuous casting in which an electromagnetic stirrer is installed upstream, in the casting direction, of the reduction rolling position of a slab, and in which a slab with a liquid core is reduced in thickness, wherein by imparting a collision flow forming-type stirring and a uni-directional alternating flow forming-type stirring, molten steel with concentrated segregation elements is stirred and diffused in a width-wise direction of slab, whereby a slab stabilized in center segregation qualities can be produced over long-time casting operation. Since the stirring flowing pattern is selectively imparted by means of the same electromagnetic stirrer, it is effective to decrease facility and equipment costs, improve maintainability, and extensively cope with various casting conditions. The continuous casting method stably ensures excellent center segregation qualities over a long time in casting of high-strength steel with high crack susceptibility or steel grade for extremely thick plate product.
摘要翻译：公开了一种连续铸造，其中电磁搅拌器沿铸造方向安装在板坯的压下轧制位置的上游，并且其中具有液芯的板坯的厚度减小，其中通过使冲击流形成 - 单向搅拌和单向交替流动式搅拌，具有浓缩偏析元素的钢水在板坯的宽度方向上搅拌扩散，由此可以通过长时间的铸造操作生产稳定中心偏析品质的板坯。由于通过相同的电磁搅拌器选择性地施加搅拌流动模式，因此降低设备成本和提高维护性以及广泛地应对各种铸造条件是有效的。连续铸造方法在极高的板材产品的高裂纹敏感性或钢级的高强度钢的铸造中，长时间稳定地确保优异的中心偏析性。

4. 发明授权

US09702056B2 Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus 有权
公开(公告)号：US09702056B2
公开(公告)日：2017-07-11
申请号：US14126942
申请日：2012-06-11
申请人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
发明人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
IPC分类号： C30B15/10 , C30B35/00 , C30B19/02 , C30B29/36 , C30B17/00 , C30B19/08
CPC分类号： C30B15/10 , C30B17/00 , C30B19/02 , C30B19/08 , C30B29/36 , C30B35/00 , Y10T117/1032
摘要： A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. An apparatus includes a seed shaft and a crucible for an SiC solution. The seed shaft has a lower end surface for attachment to an SiC seed crystal. The crucible comprises a main body, an intermediate cover, and a top cover. The main body includes a first cylindrical portion and a bottom portion at a lower end portion of the first cylindrical portion. The intermediate cover is within the first cylindrical portion and above the liquid level of the SiC solution in the main body. The intermediate cover has a first through hole for the seed shaft. The top cover is disposed above the intermediate cover and has a second through hole for the seed shaft to pass through.

5. 发明授权

US09512540B2 Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphere 有权
标题翻译：使用混合气体气氛通过溶液生长制造N型SiC单晶的方法
公开(公告)号：US09512540B2
公开(公告)日：2016-12-06
申请号：US13883350
申请日：2011-11-04
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Kouji Moriguchi , Nobuhiro Okada , Katsunori Danno , Hironori Daikoku
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Kouji Moriguchi , Nobuhiro Okada , Katsunori Danno , Hironori Daikoku
IPC分类号： C30B15/20 , C30B17/00 , C30B19/02 , C30B29/36 , C30B15/10 , C30B15/30 , C30B15/36
CPC分类号： C30B15/20 , C30B15/10 , C30B15/30 , C30B15/36 , C30B17/00 , C30B19/02 , C30B29/36
摘要： A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus (100) including a chamber (1) having an area in which a crucible (7) is to be disposed; heating the area in which the crucible (7) is to be disposed and evacuating the gas in the chamber (1); filling, after the evacuation, the chamber (1) with a mixed gas containing a noble gas and nitrogen gas; heating and melting a starting material housed in the crucible (7) disposed in the area to produce a SiC solution (8) containing silicon and carbon; and immersing a SiC seed crystal into the SiC solution under the mixed gas atmosphere to grow an n-type SiC single crystal on the SiC seed crystal.
摘要翻译：制造n型SiC单晶的方法能够抑制制造的多个n型SiC单晶锭中的氮浓度的变化。一种方法包括以下步骤：提供一种制造装置（100），该制造装置（100）包括具有坩埚（7）将被设置的区域的腔室（1）加热要安置坩埚（7）的区域并抽空腔室（1）中的气体; 在排气之后用包含惰性气体和氮气的混合气体填充室（1）; 加热和熔化容纳在所述区域中的坩埚（7）中的原料以产生含有硅和碳的SiC溶液（8）; 并在混合气体气氛下将SiC晶种浸入SiC溶液中，以在SiC晶种上生长n型SiC单晶。

6. 发明授权

US09388508B2 Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystal 有权
标题翻译： SiC单晶的制造装置，制造装置中使用的夹具以及SiC单晶的制造方法
公开(公告)号：US09388508B2
公开(公告)日：2016-07-12
申请号：US13997766
申请日：2011-12-26
申请人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Motohisa Kado , Hidemitsu Sakamoto , Hironori Daikoku
发明人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Motohisa Kado , Hidemitsu Sakamoto , Hironori Daikoku
IPC分类号： C30B11/04 , C30B15/32 , C30B19/06 , C30B29/36
CPC分类号： C30B15/32 , C30B19/06 , C30B29/36 , Y10T117/1032 , Y10T117/1072
摘要： A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig (41) and a crucible (6) are accommodated in a chamber (1). A SiC solution (8) is housed in the crucible (6). The jig (41) includes a seed shaft (411) and a cover member (412). The seed shaft (411) can move up and down, and a SiC seed crystal (9) is attached to the lower surface thereof. The cover member (412) is attached to the lower end portion of the seed shaft (411). The cover member (412) is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft (411) is disposed in the cover member (412).
摘要翻译：提供了可以抑制多晶体的产生的SiC单晶的制造装置。夹具（41）和坩埚（6）容纳在腔室（1）中。将SiC溶液（8）容纳在坩埚（6）中。夹具（41）包括种子轴（411）和盖构件（412）。种子轴（411）可以上下移动，并且其SiC晶种（9）附着到其下表面。盖构件（412）附接到种子轴（411）的下端部。盖构件（412）是在其下端具有开口的壳体，其中种子轴（411）的下端部设置在盖构件（412）中。

7. 发明申请

US20130305981A1 MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL 有权
标题翻译： SiC单晶的制造设备，用于制造设备的制造方法以及制造SiC单晶的方法
公开(公告)号：US20130305981A1
公开(公告)日：2013-11-21
申请号：US13997766
申请日：2011-12-26
申请人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Motohisa Kado , Hidemitsu Sakamoto , Hironori Daikoku
发明人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Motohisa Kado , Hidemitsu Sakamoto , Hironori Daikoku
IPC分类号： C30B15/32
CPC分类号： C30B15/32 , C30B19/06 , C30B29/36 , Y10T117/1032 , Y10T117/1072
摘要： A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig (41) and a crucible (6) are accommodated in a chamber (1). A SiC solution (8) is housed in the crucible (6). The jig (41) includes a seed shaft (411) and a cover member (412). The seed shaft (411) can move up and down, and a SiC seed crystal (9) is attached to the lower surface thereof. The cover member (412) is attached to the lower end portion of the seed shaft (411). The cover member (412) is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft (411) is disposed in the cover member (412).
摘要翻译：提供了可以抑制多晶体的产生的SiC单晶的制造装置。夹具（41）和坩埚（6）容纳在腔室（1）中。将SiC溶液（8）容纳在坩埚（6）中。夹具（41）包括种子轴（411）和盖构件（412）。种子轴（411）可以上下移动，并且其SiC晶种（9）附着到其下表面。盖构件（412）附接到种子轴（411）的下端部。盖构件（412）是在其下端具有开口的壳体，其中种子轴（411）的下端部设置在盖构件（412）中。

8. 发明授权

US08567225B2 Method and apparatus for manufacturing a bent member 有权
标题翻译：用于制造弯曲构件的方法和装置
公开(公告)号：US08567225B2
公开(公告)日：2013-10-29
申请号：US13542840
申请日：2012-07-06
申请人： Nobuhiro Okada , Atsushi Tomizawa , Naoaki Shimada
发明人： Nobuhiro Okada , Atsushi Tomizawa , Naoaki Shimada
IPC分类号： B21D9/04
CPC分类号： C21D9/08 , B21D7/12 , B21D7/16 , C21D1/42 , C21D9/60 , C21D11/00 , Y02P10/253
摘要： A bent member having excellent dimensional accuracy is manufactured by stably forming a high temperature portion uniformly in the circumferential direction of a steel tube and in a narrow region in the axial direction of the steel. The bent member is manufactured by supporting a steel tube at a first position while feeding it, performing induction heating of the steel tube at a second position with an induction heating coil, cooling the steel tube at a third position to form a high temperature portion which moves in the axial direction of the steel tube, and three-dimensionally varying the position of a gripping mechanism for the steel tube in a region to apply a bending moment to the high temperature portion.
摘要翻译：通过在钢管的圆周方向上均匀地在钢的轴向方向上的狭窄区域中稳定地形成高温部，制造尺寸精度优异的弯曲部件。弯曲构件通过在送入第一位置时支撑钢管而进行制造，在感应加热线圈的第二位置进行钢管的感应加热，在第三位置冷却钢管，形成高温部在钢管的轴向上移动，并且在一个区域中三维地改变用于钢管的夹紧机构的位置，以向高温部施加弯矩。

9. 发明申请

US20120198898A1 Method for Producing Coated Water-Soluble Particles 有权
标题翻译：生产涂层水溶性颗粒的方法
公开(公告)号：US20120198898A1
公开(公告)日：2012-08-09
申请号：US13500267
申请日：2010-10-05
申请人： Hiroyuki Fujii , Nobuhiro Okada , Hideaki Sueta , Tadashi Tanaka , Kazuyoshi Morita
发明人： Hiroyuki Fujii , Nobuhiro Okada , Hideaki Sueta , Tadashi Tanaka , Kazuyoshi Morita
IPC分类号： B05D7/00 , C05D9/00
CPC分类号： C05G3/0029 , A01N25/26
摘要： A method for producing coated water-soluble particles in a manner to form two or more coating layers on surfaces of the water-soluble particles, characterized by including: a step A wherein after supplying a first coating material that contains a polyol component and an isocyanate component, a second coating material is additionally supplied to surfaces of first coating bodies that have coating layers formed of the first coating material that has not been sufficiently cured, so that second coating bodies that are provided with coating layers of the second coating material are obtained.
摘要翻译：一种在水溶性颗粒表面形成两层或多层涂层的方法，其特征在于包括：步骤A，其中在提供含有多元醇组分和异氰酸酯的第一涂料之后，另外将第二涂层材料提供给具有由第一涂层材料形成的涂层未被充分固化的第一涂层体的表面，从而获得设置有第二涂层材料涂层的第二涂覆体。

10. 发明授权

US07635413B2 Method for preparing silicon carbide single crystal 有权
标题翻译：碳化硅单晶的制备方法
公开(公告)号：US07635413B2
公开(公告)日：2009-12-22
申请号：US11712841
申请日：2007-03-01
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
IPC分类号： C30B23/00 , C30B28/12
CPC分类号： C30B9/06 , C30B9/10 , C30B15/305 , C30B17/00 , C30B19/02 , C30B19/04 , C30B29/36 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1072
摘要： A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.
摘要翻译：通过溶液生长法生产SiC单晶，其中将种子轴附着的晶种浸入溶解在Si或Si合金熔体中的SiC溶液中，使SiC单晶在种子上生长通过逐渐冷却溶液或通过在其中提供温度梯度来制备。对于这种方法，通过反复加速到规定的转速并以该速度保持并减速到较低的转速或0转速来施加坩埚的加速旋转。坩埚的旋转方向可以反转每个加速度。种子轴也可以与坩埚的旋转同步旋转，与坩埚相同或相反。以高的晶体生长速率生产不含夹杂物的大质量好的单晶。

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