专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120211073A1 SOLAR CELL 有权
标题翻译：太阳能电池
公开(公告)号：US20120211073A1
公开(公告)日：2012-08-23
申请号：US13460525
申请日：2012-04-30
申请人： Nobuaki NAGAO , Takahiro HAMADA , Akio MATSUSHITA
发明人： Nobuaki NAGAO , Takahiro HAMADA , Akio MATSUSHITA
IPC分类号： H01L31/0264 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/1884 , H01L31/035281 , H01L31/0735 , H01L31/1848 , H01L31/1852 , H01L31/1856 , Y02E10/544 , Y02P70/521
摘要： A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.
摘要翻译：制造太阳能电池的方法包括以下步骤：在石墨基板的表面上形成非晶碳层，AlN层和第一n型氮化物半导体层，在第一n上形成具有多个开口的掩模层型氮化物半导体层; 在所述第一n型氮化物半导体层的由所述多个开口露出的部分上形成多个第二n型氮化物半导体层; 在所述多个第二n型氮化物半导体层上形成多个光吸收层; 在所述多个所述光吸收层上形成多个p侧氮化物半导体层; 形成p侧电极; 并形成n侧电极。

2. 发明申请

US20120104354A1 LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20120104354A1
公开(公告)日：2012-05-03
申请号：US13283985
申请日：2011-10-28
申请人： Hiroyuki TANAKA , Nobuaki NAGAO , Takahiro HAMADA , Eiji FUJII
发明人： Hiroyuki TANAKA , Nobuaki NAGAO , Takahiro HAMADA , Eiji FUJII
IPC分类号： H01L33/04
CPC分类号： H01L33/42 , H01L33/32
摘要： A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.
摘要翻译：发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极订购。窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触，n型单晶ITO透明膜与n型单晶ZnO透明膜接触，p型侧电极与n型单晶ZnO透明膜连接。 n型单晶ITO透明膜含有Ga，Ga /（In + Ga）的摩尔比不小于0.08且不大于0.5。 n型单晶ITO透明膜的厚度不小于1.1nm且不大于55nm。

3. 发明申请

US20110148284A1 LIGHT-EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：发光二极管元件及其制造方法
公开(公告)号：US20110148284A1
公开(公告)日：2011-06-23
申请号：US13036651
申请日：2011-02-28
申请人： Nobuaki NAGAO , Takahiro Hamada , Akihiro Itoh
发明人： Nobuaki NAGAO , Takahiro Hamada , Akihiro Itoh
IPC分类号： H01J1/62 , H01L33/30 , H01L29/20 , H01L21/20 , H01L33/06
CPC分类号： H01L33/007 , H01L21/02376 , H01L21/02428 , H01L21/02444 , H01L21/02458 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/32 , H01L33/42
摘要： A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.
摘要翻译：用于半导体器件的衬底包括石墨衬底，形成在石墨衬底上的厚度不小于20nm且不大于60nm的无定形碳层和形成在非晶碳层上的AlN层。无定形碳层通过氧化石墨基材的表面而获得。

4. 发明申请

US20110298006A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110298006A1
公开(公告)日：2011-12-08
申请号：US13161256
申请日：2011-06-15
申请人： Hiroyuki HAGINO , Hiroshi OHNO , Kazuhiko YAMANAKA , Nobuaki NAGAO , Takahiro HAMADA
发明人： Hiroyuki HAGINO , Hiroshi OHNO , Kazuhiko YAMANAKA , Nobuaki NAGAO , Takahiro HAMADA
IPC分类号： H01L33/32 , H01S5/22 , H01L33/20
CPC分类号： H01L33/145 , B82Y20/00 , H01L21/02554 , H01L21/02628 , H01L21/02639 , H01L33/20 , H01L2224/48464 , H01L2224/73265 , H01L2924/19107 , H01S5/02461 , H01S5/0422 , H01S5/2211 , H01S5/2218 , H01S5/2231 , H01S5/34333
摘要： A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and a current blocking layer configured to selectively inject a current into the active layer. The second cladding layer has a stripe-shaped ridge portion. The current blocking layer is formed in regions on both sides of the ridge portion, and is made of zinc oxide having a crystalline structure.
摘要翻译：半导体发光器件包括包括第一覆层，有源层和第二覆层的氮化物半导体层，以及被配置为选择性地将电流注入到有源层中的电流阻挡层。第二包覆层具有条状的脊部。电流阻挡层形成在脊部两侧的区域中，并且由具有结晶结构的氧化锌制成。

5. 发明申请

US20110203651A1 SOLAR CELL AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20110203651A1
公开(公告)日：2011-08-25
申请号：US13097860
申请日：2011-04-29
申请人： Nobuaki NAGAO , Takahiro HAMADA , Akihiro ITOH
发明人： Nobuaki NAGAO , Takahiro HAMADA , Akihiro ITOH
IPC分类号： H01L31/06 , H01L31/0304
CPC分类号： H01L31/0392 , C23C16/303 , C30B25/183 , C30B25/186 , C30B29/403 , H01L21/02376 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L31/0693 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.
摘要翻译：太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。无定形碳层通过氧化石墨基材的表面而获得。

6. 发明申请

US20120027919A1 ELECTRODE FOR LITHIUM SECONDARY BATTERY, LITHIUM SECONDARY BATTERY AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：锂二次电池用电极，锂二次电池及其制造方法
公开(公告)号：US20120027919A1
公开(公告)日：2012-02-02
申请号：US13248858
申请日：2011-09-29
申请人： Keiichi TAKAHASHI , Masaya UGAJI , Yasutaka KOGETSU , Shinji MINO , Nobuaki NAGAO , Masaki HASEGAWA
发明人： Keiichi TAKAHASHI , Masaya UGAJI , Yasutaka KOGETSU , Shinji MINO , Nobuaki NAGAO , Masaki HASEGAWA
IPC分类号： H01M4/04 , B05D1/36 , B05D3/00
CPC分类号： H01M4/13 , H01M4/131 , H01M4/139 , H01M4/1391 , H01M4/505 , H01M4/525 , H01M10/052 , Y02T10/7011 , Y10T29/49108 , Y10T29/49115
摘要： An electrode for a lithium secondary battery including a sheet-like current collector and an active material layer carried on the current collector. The active material layer is capable of absorbing and desorbing lithium, and the active material layer includes a plurality of columnar particles having at least one bend. An angle θ1 formed by a growth direction of the columnar particles from a bottom to a first bend of the columnar particles, and a direction normal to the current collector is preferably 10° or more and less than 90°. When θn+1 is an angle formed by a growth direction of the columnar particles from an n-th bend counted from a bottom of the columnar particles to an (n+1)-th bend, and the direction normal to the current collector, and n is an integer of 1 or more, θn+1 is preferably 0° or more and less than 90°.
摘要翻译：一种锂二次电池用电极，其包含片状集电体和在集电体上承载的活性物质层。活性物质层能够吸收和解吸锂，并且活性物质层包括具有至少一个弯曲部分的多个柱状颗粒。由柱状颗粒从柱状颗粒的底部到第一弯曲部的生长方向形成的角度θ和垂直于集电体的方向优选为10°以上且小于90°。当n + 1是由从柱状颗粒的底部计数到第（n + 1）弯曲的第n个弯曲的柱状颗粒的生长方向和垂直于电流的方向形成的角度并且n为1以上的整数，n + 1优选为0°以上且小于90°。

7. 发明申请

US20120017430A1 LITHIUM SECONDARY BATTERY 审中-公开
标题翻译：锂二次电池
公开(公告)号：US20120017430A1
公开(公告)日：2012-01-26
申请号：US13252808
申请日：2011-10-04
申请人： Yasutaka KOGETSU , Masaya UGAJI , Keiichi TAKAHASHI , Shinji MINO , Nobuaki NAGAO , Satoshi SHIBUTANI , Kazuyoshi HONDA
发明人： Yasutaka KOGETSU , Masaya UGAJI , Keiichi TAKAHASHI , Shinji MINO , Nobuaki NAGAO , Satoshi SHIBUTANI , Kazuyoshi HONDA
IPC分类号： H01M4/1395 , B05D5/12 , C23C14/14 , H01M10/04
CPC分类号： H01M4/134 , H01M4/0423 , H01M4/0426 , H01M4/1395 , H01M4/38 , H01M2004/021 , Y02E60/122 , Y02P70/54 , Y10T29/49115
摘要： In order to enhance charge and discharge efficiency and to improve cycle characteristics by increasing a facing area between a positive electrode active material and a negative electrode active material, in a negative electrode for lithium secondary battery having a current collector and an active material layer carried on the current collector, the active material layer includes a plurality of columnar particles. The columnar particles include an element of silicon, and are tilted toward the normal direction of the current collector. Angle θ formed between the columnar particles and the normal direction of the current collector is preferably 10°≦θ
摘要翻译：为了提高充放电效率，通过增加正极活性物质和负极活性物质之间的面积来提高循环特性，在具有集电体和活性物质层的锂二次电池用负极中，集电体，活性物质层包括多个柱状颗粒。柱状颗粒包括硅元素，并且朝向集电体的法线方向倾斜。角度与角度柱状颗粒与集电体的法线方向之间形成的膜优选为10°＆lt; 90°。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式