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    • 6. 发明授权
    • Triazine derivative, process for preparing the same and herbicide using
the same
    • 三嗪衍生物,其制备方法和使用其的除草剂
    • US5529977A
    • 1996-06-25
    • US326830
    • 1994-10-21
    • Katsumasa HaradaTakaaki AbeYuji AkiyoshiAkio MatsushitaMikio KojimaIkuo ShiraishiKaoru YamamotoTakashi Hayama
    • Katsumasa HaradaTakaaki AbeYuji AkiyoshiAkio MatsushitaMikio KojimaIkuo ShiraishiKaoru YamamotoTakashi Hayama
    • A01N43/54A01N43/66C07D239/60C07D251/30C07D251/38C07D521/00C07D251/34C07D251/16C07D403/12
    • C07D231/12A01N43/54A01N43/66C07D233/56C07D239/60C07D249/08C07D251/30C07D251/38
    • Disclosed are a pyrimidine or triazine compound represented by the following formula (I): ##STR1## wherein R.sup.1 represents cyano group, a halogen atom, hydroxy group or --O--R.sup.7 where R.sup.7 represents a lower alkyl group, a lower alkenyl group, a lower alkynyl group, a halo-lower alkyl group or a cyano-lower alkyl group; R.sup.2 represents hydrogen atom or a lower alkyl group; R.sup.3 represents hydrogen atom or a lower alkyl group; R.sup.4 represents a 1-imidazolyl group, --NHSO.sub.2 --R.sup.8 where R.sup.8 represents a lower alkyl group or a phenyl group which may have a substituent, hydroxy group, a lower alkoxy group or a benzyloxy group when Z is nitrogen atom; or a 1-imidazolyl group, --NHSO.sub.2 --R.sup.8 where R.sup.8 has the same meaning as defined above, hydroxy group, OK, a lower alkoxy group which may have a substituent, a lower alkenyloxy group, a lower alkynyloxy group, a cycloalkoxy group which may have a substituent, a phenoxy group, a benzyloxy group, a lower alkylthio group, a phenylthio group or an alkylsulfonylamino group when Z is --CH.dbd. group; R.sup.5 represents a lower alkoxy group; R.sup.6 represents a lower alkoxy group or a lower alkyl group; X represents oxygen atom or sulfur atom; and Z represents nitrogen atom or --CH.dbd. group.processes for preparing the same and a herbicide containing the same as an active ingredient(s).
    • 公开了由下式(I)表示的嘧啶或三嗪化合物:其中R 1表示氰基,卤素原子,羟基或-O-R 7,其中R 7表示低级烷基,低级烯基 基,低级炔基,卤代低级烷基或氰基 - 低级烷基; R2表示氢原子或低级烷基; R3表示氢原子或低级烷基; R 4表示当Z为氮原子时,可以具有取代基,羟基,低级烷氧基或苄氧基的低级烷基或苯基,-NHSO 2 -R 8, 或1-咪唑基,-NHSO 2 -R 8,其中R8具有与上述相同的含义,羟基,OK,可具有取代基的低级烷氧基,低级链烯氧基,低级炔氧基,环烷氧基 当Z为-CH =基团时,可具有取代基,苯氧基,苄氧基,低级烷硫基,苯硫基或烷基磺酰基氨基; R5代表低级烷氧基; R6代表低级烷氧基或低级烷基; X表示氧原子或硫原子; Z表示氮原子或-CH =基团。 其制备方法和含有其作为活性成分的除草剂。
    • 9. 发明授权
    • Solar cell
    • 太阳能电池
    • US08420431B2
    • 2013-04-16
    • US13460525
    • 2012-04-30
    • Nobuaki NagaoTakahiro HamadaAkio Matsushita
    • Nobuaki NagaoTakahiro HamadaAkio Matsushita
    • H01L21/00
    • H01L31/1884H01L31/035281H01L31/0735H01L31/1848H01L31/1852H01L31/1856Y02E10/544Y02P70/521
    • A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.
    • 制造太阳能电池的方法包括以下步骤:在石墨基板的表面上形成非晶碳层,AlN层和第一n型氮化物半导体层,在第一n上形成具有多个开口的掩模层 型氮化物半导体层; 在所述第一n型氮化物半导体层的由所述多个开口露出的部分上形成多个第二n型氮化物半导体层; 在所述多个第二n型氮化物半导体层上形成多个光吸收层; 在所述多个所述光吸收层上形成多个p侧氮化物半导体层; 形成p侧电极; 并形成n侧电极。