专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5252414A Evaluation method of resist coating 失效
标题翻译：抗蚀剂涂层的评价方法
公开(公告)号：US5252414A
公开(公告)日：1993-10-12
申请号：US747619
申请日：1991-08-20
申请人： Kazuhiro Yamashita , Hironao Iwai , Noboru Nomura
发明人： Kazuhiro Yamashita , Hironao Iwai , Noboru Nomura
IPC分类号： G03F7/16 , G03F7/00 , G03F7/20 , H01L21/027 , H01L21/30 , H01L21/66 , G03F9/00
CPC分类号： G03F7/70633 , G03F7/0035 , G03F7/20
摘要： A method for evaluating a resist coating comprising the steps of: forming a first layer resist pattern including an alignment mark by applying a first resist on a semiconductor substrate and by exposing and developing said first resist, said first layer resist pattern having a ridge portion; irradiating said first layer resist pattern with a deep ultraviolet ray; applying, onto said irradiated first layer resist pattern, a second resist having substantially the same refractive index as said first resist to form a second resist coating; detecting said alignment mark formed in said first layer resist pattern, and relatively positioning a pattern for said second resist and said first layer resist pattern; and determining nonuniformity characteristics of said second resist coating by measuring an overlay accuracy between said first layer resist pattern and said pattern for said second resist. The present invention ensures a quantitative evaluation in a non-contact manner for non-uniformity of a resist coating, and enables a resist coating method to be optimized.
摘要翻译：一种抗蚀剂涂层评价方法，其特征在于，包括以下步骤：通过在半导体衬底上施加第一抗蚀剂，通过曝光和显影所述第一抗蚀剂，形成包括对准标记的第一层抗蚀剂图案，所述第一层抗蚀剂图案具有脊部; 用深紫外线照射所述第一层抗蚀剂图案; 在所述照射的第一层抗蚀剂图案上施加具有与所述第一抗蚀剂基本相同的折射率的第二抗蚀剂，以形成第二抗蚀剂涂层; 检测形成在所述第一层抗蚀剂图案中的所述对准标记，并且相对地定位所述第二抗蚀剂和所述第一层抗蚀剂图案的图案; 以及通过测量所述第一层抗蚀剂图案和所述第二抗蚀剂的所述图案之间的覆盖精度来确定所述第二抗蚀剂涂层的不均匀性。本发明确保以非接触方式对抗蚀剂涂层的不均匀性进行定量评价，并且能够优化抗蚀剂涂布方法。

2. 发明授权

US5191465A Optical apparatus for alignment of reticle and wafer in exposure apparatus 失效
标题翻译：用于在曝光装置中对准标线片和晶片的光学装置
公开(公告)号：US5191465A
公开(公告)日：1993-03-02
申请号：US759041
申请日：1991-09-05
申请人： Kazuhiro Yamashita , Noboru Nomura
发明人： Kazuhiro Yamashita , Noboru Nomura
IPC分类号： G03F9/00
CPC分类号： G03F9/7049
摘要： An optical apparatus for aligning a reticle and a wafer together in connection with reduction projection onto the wafer of an image of a circuit pattern formed on the reticle. Two light beams having slightly different frequencies are concurrently applied to alignment gratings on the reticle and alignment gratings on the wafer through the windows on the reticle and a reduction projection lens. Heterodyne signals of interference rays resulting from diffraction by the alignment gratings on the reticle of the light applied to the alignment gratings are caught by a first optical sensor. Heterodyne signals of interference rays resulting from diffraction by the alignment gratings on the wafer of the light applied to the alignment gratings are caught by a second optical sensor. The difference in phase of the heterodyne signals detected by the respective optical sensors is detected by a phase meter, and the position of the wafer relative to the reticle is adjusted so that the phase difference is reduced to zero.
摘要翻译：一种用于将掩模版和晶片结合在一起的光学装置，其与形成在掩模版上的电路图案的图像的晶片上的还原投影相结合。具有稍微不同频率的两个光束通过掩模版上的窗口和还原投影透镜同时施加在光罩上的对准光栅和晶片上的对准光栅。通过第一光学传感器捕获由施加到对准光栅的光的光罩上的对准光栅衍射产生的干涉光线的异常信号。由施加到对准光栅的光的晶片上的对准光栅的衍射产生的干涉光线的异常信号被第二光学传感器捕获。通过相位计检测由各个光学传感器检测到的外差信号的相位差，调整晶片相对于掩模版的位置，使得相位差减小到零。

3. 发明授权

US4870289A Apparatus for controlling relation in position between a photomask and a wafer 失效
标题翻译：用于控制光掩模和晶片之间的位置关系的装置
公开(公告)号：US4870289A
公开(公告)日：1989-09-26
申请号：US248051
申请日：1988-09-23
申请人： Takeo Sato , Shinichiro Aoki , Katsumasa Yamaguchi , Tadashi Kaneko , Noboru Nomura , Keisuke Koga , Kazuhiro Yamashita
发明人： Takeo Sato , Shinichiro Aoki , Katsumasa Yamaguchi , Tadashi Kaneko , Noboru Nomura , Keisuke Koga , Kazuhiro Yamashita
IPC分类号： G03F9/00 , H01L21/68
CPC分类号： G03F9/7065 , G03F9/7049 , H01L21/682
摘要： A system for controlling the relation in position between a photomask and a wafer for use in manufacturing apparatus of a highly integrated circuit such as large scale integration (LSI). The position control system includes a coherent light source for generating two light beams which are different in frequency and polarizing direction from each other. The light beams from the coherent light source is introduced into a first diffraction grating and the diffracted light from the first diffraction grating selectively pass through a telecentric lens system and are led to second and third diffraction gratings respectively disposed on the photomask and the wafer. Light beat signals are obtained in correspondance with the diffracted light from the second and third difraction gratings and the position relation between the photomask and wafer is controlled on the basis of the phase difference between the obtained light beat signals which corresponds to the position difference between the photomask and the wafer.

4. 发明授权

US4771180A Exposure apparatus including an optical system for aligning a reticle and a wafer 失效
标题翻译：曝光装置包括用于对准掩模版和晶片的光学系统
公开(公告)号：US4771180A
公开(公告)日：1988-09-13
申请号：US916738
申请日：1986-10-08
申请人： Noboru Nomura , Kazuhiro Yamashita
发明人： Noboru Nomura , Kazuhiro Yamashita
IPC分类号： G03F9/00 , G01N21/86
CPC分类号： G03F9/7049
摘要： A reduction projection type alignment and exposure apparatus having a light source, for alignment, a reticle having at least a first grating, first lens system, a spatial filter disposed around a Fourier spectral plane of the first lens system, second lens system, a wafer having at least a second grating, and a photo-detector for detecting light intensity of superimposed beams appearing on the spatial filter. An optical system for light exposure is provided separately from the optical system for alignment which includes the light source for alignment, first and second lens system, spatial filter, etc. The light beam generated from the light source for alignment is applied to the reticle at which it is divided into a plurality of difracted light beams by the first grating, and the diffracted light beams are applied through the first lens system, spatial filter and second lens system onto the wafer so that the diffracted light beams are re-diffracted by the second grating, and the re-diffracted light beams are superimposed with the diffracted light beams and the light intensity of the superimposed beams detected by the photo-detector.
摘要翻译：一种缩小投影型对准和曝光装置，具有用于对准的光源，具有至少第一光栅的掩模版，第一透镜系统，设置在第一透镜系统的傅立叶光谱平面附近的空间滤光器，第二透镜系统，晶片具有至少第二光栅，以及用于检测出现在空间滤光片上的叠加光束的光强度的光检测器。与用于对准的光学系统分开设置用于曝光的光学系统，其包括用于对准的光源，第一和第二透镜系统，空间滤光器等。从用于对准的光源产生的光束被施加到掩模版将其通过第一光栅分割为多个衍射光束，并且将衍射光束通过第一透镜系统，空间滤光器和第二透镜系统施加到晶片上，使得衍射光束被衍射的光束并且再衍射光束与衍射光束叠加，并且由光检测器检测到的叠加光束的光强度。

5. 发明授权

US5186788A Fine pattern forming method 失效
标题翻译：精细图案形成方法
公开(公告)号：US5186788A
公开(公告)日：1993-02-16
申请号：US655237
申请日：1991-02-12
申请人： Kazuhiko Hashimoto , Kazuhiro Yamashita , Noboru Nomura
发明人： Kazuhiko Hashimoto , Kazuhiro Yamashita , Noboru Nomura
IPC分类号： G03F7/039 , G03F7/095 , G03F7/20
CPC分类号： G03F7/039 , G03F7/095 , G03F7/2022 , Y10S438/949
摘要： Disclosed is a fine pattern forming method which is capable of forming a high positive-to-negative reversal pattern high in dry-etch resistance, at high density, by irradiating an entire surface of a resist with ion shower at low doses before or after electron beam or focus ion beam exposure, and then developing it.
摘要翻译：公开了一种精细图案形成方法，其能够通过在电子之前或之后以低剂量用离子淋浴器照射抗蚀剂的整个表面，从而以高密度形成高耐干蚀刻电阻的高正负反转图案光束或聚焦离子束曝光，然后显影。

6. 发明授权

US4828392A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4828392A
公开(公告)日：1989-05-09
申请号：US837766
申请日：1986-03-10
申请人： Noboru Nomura , Kazuhiro Yamashita , Takayoshi Matsumura , Midori Yamaguchi
发明人： Noboru Nomura , Kazuhiro Yamashita , Takayoshi Matsumura , Midori Yamaguchi
IPC分类号： G03F9/00
CPC分类号： G03F9/7049 , G03F9/7076
摘要： A reduction projection type alignment and exposure apparatus which comprises a light source, a reticle having a first grating, first lens system, a spatial filter disposed around a Fourier spectral plane of the first lens system, second lens system, a substrate having a second grating, and a plurality of photo-detectors for detecting light intensities of a plurality of spectrums appearing on the spatial filter.The light beam generated from the light source is applied to the reticle at which it is divided into a plurality of diffracted light beams by the first grating, and the diffracted light beams are applied through the first lens system, the spatial filter and the second lens system onto the substrate so that the diffracted light beams are re-diffracted by the second grating, and the re-diffracted light beams appear as a plurality of spectrums on the spatial filter. These spectrums are detected by photo-detectors and used for alignment of the reticle and the substrate.
摘要翻译：一种还原投影型取向曝光装置，包括光源，具有第一光栅的掩模版，第一透镜系统，设置在第一透镜系统的傅立叶光谱平面附近的空间滤光器，第二透镜系统，具有第二光栅的基板以及用于检测出现在空间滤波器上的多个光谱的光强度的多个光检测器。从光源产生的光束被施加到光掩模，在该掩模版处，由第一光栅将其分成多个衍射光束，衍射光束通过第一透镜系统，空间滤光器和第二透镜系统到基板上，使得衍射光束被第二光栅重衍射，并且再衍射光束在空间滤光器上表现为多个光谱。这些光谱由光电检测器检测并用于对准标线片和基板。

7. 发明授权

US08395194B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08395194B2
公开(公告)日：2013-03-12
申请号：US13238537
申请日：2011-09-21
申请人： Haruhisa Yokoyama , Hiroshi Sakoh , Kazuhiro Yamashita , Mitsuo Yasuhira , Yuichi Hirofuji
发明人： Haruhisa Yokoyama , Hiroshi Sakoh , Kazuhiro Yamashita , Mitsuo Yasuhira , Yuichi Hirofuji
IPC分类号： H01L27/148 , H01L27/146 , H01L21/00
CPC分类号： H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14656
摘要： A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.
摘要翻译：根据本发明的固态成像装置是MOS型的，并且包括排列成行和列的多个像素，并且包括：半导体衬底; 形成在所述半导体衬底中并将从所述半导体衬底的第一主表面入射的光转换为信号电荷的光电二极管; 传输晶体管，其形成在半导体衬底的第二主表面中并传送由光电二极管转换的信号电荷; 在半导体衬底的第一主表面之上的像素之间的边界上导电并形成的遮光膜; 与所述遮光膜电连接并形成在所述半导体衬底的所述第一主表面中的溢出漏极区域; 以及形成在溢出漏极区域和光电二极管之间的溢出阻挡区域。

8. 发明授权

US06378098B1 Semiconductor test system 失效
标题翻译：半导体测试系统
公开(公告)号：US06378098B1
公开(公告)日：2002-04-23
申请号：US09264768
申请日：1999-03-09
申请人： Kazuhiro Yamashita
发明人： Kazuhiro Yamashita
IPC分类号： G01R3128
CPC分类号： G01R31/31917
摘要： A semiconductor test system for efficiently testing a semiconductor device (DUT) having a phase lock loop (PLL) circuit therein. The semiconductor test system includes a first clock and waveform generator for supplying a clock signal to the PLL circuit at a start of the first pattern block, a second clock and waveform generator for supplying pattern data to the DUT during each of the pattern blocks, a pattern generator for generating pattern data, and a timing generator for generating a tester rate signal, a clear signal, and a gate signal for controlling the tester rate signal and the clear signal in the first and second clock and waveform generators. The clock signal is continuously provided to the PLL circuit until the end of the last pattern block while the pattern data to the data pin is reset between the end of the current pattern block and the start of the next pattern block.
摘要翻译：一种用于有效测试其中具有锁相环（PLL）电路的半导体器件（DUT）的半导体测试系统。半导体测试系统包括第一时钟和波形发生器，用于在第一模式块的开始处向PLL电路提供时钟信号;第二时钟和波形发生器，用于在每个模式块期间向DUT提供模式数据，用于产生图案数据的图形发生器，以及用于产生测试器速率信号，清除信号和用于控制第一和第二时钟和波形发生器中的测试仪速率信号和清除信号的清除信号的定时发生器。在当前图案块的结束和下一个图案块的开始之间复位到数据引脚的图案数据之前，将时钟信号连续提供给PLL电路，直到最后一个模式块的结束为止。

9. 发明授权

US06253620B1 Device and method for measuring dynamic torsional characteristics of a damper assembly 失效
标题翻译：用于测量阻尼器组件的动态扭转特性的装置和方法
公开(公告)号：US06253620B1
公开(公告)日：2001-07-03
申请号：US09323695
申请日：1999-06-02
申请人： Kazuhiro Yamashita
发明人： Kazuhiro Yamashita
IPC分类号： G01D900
CPC分类号： G01P15/165 , G01M17/04
摘要： An object is to enable accurate measurement of dynamic torsional characteristics of a damper assembly. A measuring device measures an angular speed (d&thgr;1/dt) of an input rotary member, an angular speed (d&thgr;2/dt) of an output rotary member and a torque (T1) transmitted to the input rotary member. A torsion angle (&thgr;) of a damper unit is calculated by integrating the angular speeds (d&thgr;1/dt) and (d&thgr;2/dt) of the input and output rotary members. A torque (T) acting on the damper unit is calculated by subtracting a product of an angular acceleration (d2&thgr;1/dt2) of the input rotary member calculated by differentiating the angular speed (d&thgr;1/dt) of the input rotary member and a moment of inertia (I1) of the input rotary member from the torque (T1) transmitted to the input rotary member.
摘要翻译：目的是能够精确地测量阻尼器组件的动态扭转特性。测量装置测量输入旋转构件的角速度（dθta/ dt），输出旋转构件的角速度（dθ= 2 / dt）和扭矩（T1）传输到输入旋转部件。通过积分输入和输出旋转构件的角速度（dθta/ dt）和（dθta/ dt）来计算阻尼单元的扭转角（θ）。通过减去通过对输入旋转部件的角速度（dθta/ dt）进行微分而计算出的输入旋转部件的角加速度（d2theta1 / dt2）的乘积，计算作用在减震器单元上的扭矩（T）输入旋转构件的惯性（I1）从传递到输入旋转构件的扭矩（T1）。

10. 发明授权

US5741628A Method of forming micropatterns by having a resist film absorb water 失效
标题翻译：通过使抗蚀剂膜吸水而形成微图案的方法
公开(公告)号：US5741628A
公开(公告)日：1998-04-21
申请号：US725949
申请日：1996-10-07
申请人： Takahiro Matsuo , Kazuhiro Yamashita , Masayuki Endo , Masaru Sasago
发明人： Takahiro Matsuo , Kazuhiro Yamashita , Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26 , G03F7/32 , H01L21/027 , H01L21/033 , G03F7/004
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
摘要翻译：通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生酸并与酸反应。如果通过掩模用KrF准分子激光照射抗蚀剂膜，则在抗蚀剂膜的暴露部分的表面中产生酸，使得暴露部分的表面由酸形成亲水性。如果将水蒸汽供应到抗蚀剂膜的表面，则水从暴露部分的表面扩散到深部。如果甲基三乙氧基硅烷的蒸气在相对湿度为95％的空气中被喷涂在抗蚀剂膜的表面上，则在暴露部分的表面上选择性地形成厚度足够大的氧化物膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式