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1. 发明申请

US20130048215A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20130048215A1
公开(公告)日：2013-02-28
申请号：US13598431
申请日：2012-08-29
申请人： Noboru Higashi , Satoru Hiraki , Hiromi Kiyose , Hideaki Sato , Hiroshi Komiya
发明人： Noboru Higashi , Satoru Hiraki , Hiromi Kiyose , Hideaki Sato , Hiroshi Komiya
IPC分类号： B44C1/22 , H01L21/465 , C03C15/00
CPC分类号： H01L21/67086 , G01N21/3577 , H01L21/31111 , H01L21/67248 , H01L21/67253
摘要： A substrate processing apparatus that performs processing by immersing a substrate into a processing liquid obtained by mixing phosphoric acid with a diluent includes a concentration sensing means for sensing the concentration of the processing liquid by measuring the absorbance characteristics of the processing liquid. The concentration sensing means includes a light-transmitting section that introduces the processing liquid into the inside to let the processing liquid pass therethrough, a light-emitting section that radiates light having a predetermined wavelength to the light-transmitting section, a light-receiving section that receives the light therefrom via the light-transmitting section, a first lens that condenses the light emitted from the light-emitting section to the light-transmitting section, a second lens that condenses the light that has passed through the light-transmitting section to the light-receiving section, and a cooling mechanism that cools at least one of these.
摘要翻译：通过将磷酸与稀释剂混合而获得的处理液中的基材浸渍进行处理的基板处理装置包括：浓度检测单元，用于通过测定处理液的吸光度特性来检测处理液的浓度。集中检测装置包括将处理液引入到内部以使处理液通过的透光部，将具有预定波长的光照射到发光部的发光部，受光部经由透光部接收来自该发光部的光的第一透镜，将从发光部射出的光会聚到透光部的第一透镜，将透过该透光部的光聚光的第二透镜，光接收部分和冷却这些中的至少一个的冷却机构。

2. 发明授权

US10153182B2 Substrate processing apparatus 有权
公开(公告)号：US10153182B2
公开(公告)日：2018-12-11
申请号：US13598431
申请日：2012-08-29
申请人： Noboru Higashi , Satoru Hiraki , Hiromi Kiyose , Hideaki Sato , Hiroshi Komiya
发明人： Noboru Higashi , Satoru Hiraki , Hiromi Kiyose , Hideaki Sato , Hiroshi Komiya
IPC分类号： H01L21/67 , H01L21/311 , G01N21/3577
摘要： A substrate processing apparatus that performs processing by immersing a substrate into a processing liquid obtained by mixing phosphoric acid with a diluent includes a concentration sensing means for sensing the concentration of the processing liquid by measuring the absorbance characteristics of the processing liquid. The concentration sensing means includes a light-transmitting section that introduces the processing liquid into the inside to let the processing liquid pass therethrough, a light-emitting section that radiates light having a predetermined wavelength to the light-transmitting section, a light-receiving section that receives the light therefrom via the light-transmitting section, a first lens that condenses the light emitted from the light-emitting section to the light-transmitting section, a second lens that condenses the light that has passed through the light-transmitting section to the light-receiving section, and a cooling mechanism that cools at least one of these.

3. 发明申请

US20130240143A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20130240143A1
公开(公告)日：2013-09-19
申请号：US13811877
申请日：2011-07-21
申请人： Hiromi Kiyose , Satoru Hiraki , Hiroshi Watanabe
发明人： Hiromi Kiyose , Satoru Hiraki , Hiroshi Watanabe
IPC分类号： B44C1/22
CPC分类号： B44C1/227 , H01L21/31111 , H01L21/67057 , H01L21/67086 , H01L21/67109
摘要： A substrate processing device, which processes by immersing the substrate in the processing liquid comprising a mixture of a chemical and a diluting liquid, is provided with: a processing tank (1) that retains the processing liquid; heating means (2, 3) that heat the processing liquid; a temperature detection means (4) that detects the temperature of the processing liquid; a temperature control means (5) that operates the aforementioned heating means (2, 3) in a manner so that the detected temperature approaches a set temperature; a replenishing means (6) that replenishes the diluting liquid in the processing liquid; a concentration detection means (7) that detects the concentration of the processing liquid by measuring the light absorption characteristics of the processing liquid; and a concentration control means (8) that operates the aforementioned replenishing means (6) in a manner so that the detected concentration approaches a set concentration.
摘要翻译：通过将基板浸渍在包含化学液体和稀释液体的混合物的处理液中进行处理的基板处理装置具有：保持处理液体的处理槽（1）加热处理液的加热装置（2,3）温度检测装置（4），其检测处理液的温度; 温度控制装置（5），其以使得检测到的温度接近设定温度的方式操作上述加热装置（2,3）; 补充处理液中的稀释液的补充装置（6）; 浓度检测装置（7），其通过测量处理液的光吸收特性来检测处理液的浓度; 以及以使检测出的浓度接近设定浓度的方式操作上述补充装置（6）的浓度控制装置（8）。

4. 发明授权

US10226959B2 Substrate processing apparatus 有权
公开(公告)号：US10226959B2
公开(公告)日：2019-03-12
申请号：US13811877
申请日：2011-07-21
申请人： Hiromi Kiyose , Satoru Hiraki , Hiroshi Watanabe
发明人： Hiromi Kiyose , Satoru Hiraki , Hiroshi Watanabe
IPC分类号： B44C1/22 , H01L21/67 , H01L21/311
摘要： A substrate processing device, which processes by immersing the substrate in the processing liquid comprising a mixture of a chemical and a diluting liquid, is provided with: a processing tank (1) that retains the processing liquid; heating means (2, 3) that heat the processing liquid; a temperature detection means (4) that detects the temperature of the processing liquid; a temperature control means (5) that operates the aforementioned heating means (2, 3) in a manner so that the detected temperature approaches a set temperature; a replenishing means (6) that replenishes the diluting liquid in the processing liquid; a concentration detection means (7) that detects the concentration of the processing liquid by measuring the light absorption characteristics of the processing liquid; and a concentration control means (8) that operates the aforementioned replenishing means (6) in a manner so that the detected concentration approaches a set concentration.

5. 发明申请

US20070221252A1 HIGH-PRESSURE PROCESSING METHOD 审中-公开
标题翻译：高压加工方法
公开(公告)号：US20070221252A1
公开(公告)日：2007-09-27
申请号：US11562680
申请日：2006-11-22
申请人： Hiromi Kiyose
发明人： Hiromi Kiyose
IPC分类号： B08B3/00
CPC分类号： H01L21/02101 , C03C23/0075 , G03F7/423 , H01L21/02057 , H01L21/31111
摘要： An etching is performed to a wafer using a first processing fluid which is produced through the addition of a liquid mixture to a supercritical carbon dioxide, the liquid mixture including hydrogen fluoride, ammonium fluoride, and isopropyl alcohol, whereby SiO2 film formed on the surface of the wafer is removed. Then, a rinsing is performed to the wafer using a second processing fluid which is produced through the addition of methanol to the supercritical carbon dioxide, or the addition of methanol and water to the supercritical carbon dioxide, whereby Si2F6 which results from the etching and remains to adhere to the surface of the wafer is removed.
摘要翻译：使用通过向超临界二氧化碳中加入液体混合物制备的第一处理流体对晶片进行蚀刻，所述液体混合物包括氟化氢，氟化铵和异丙醇，由此SiO 2，去除在晶片表面上形成的“SUB”膜。然后，使用通过向超临界二氧化碳中加入甲醇生产的第二处理流体或向超临界二氧化碳中加入甲醇和水，从而对晶片进行冲洗，由此Si 2 除去由腐蚀产生的残余物和附着在晶片表面上的“F 6”。

6. 发明授权

US08211810B2 Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution 有权
标题翻译：用磷酸溶液进行蚀刻处理的基板处理装置和基板处理方法
公开(公告)号：US08211810B2
公开(公告)日：2012-07-03
申请号：US12203394
申请日：2008-09-03
申请人： Hiromi Kiyose
发明人： Hiromi Kiyose
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/67086
摘要： An additive containing a hexafluorosilicic acid solution (H2SiF6+H2O) is sequentially inputted into a phosphoric acid solution pooled in an immersion bath from an additive input mechanism. Further, a trap agent containing a fluoroboric acid solution (HBF4+H2O) is inputted into the phosphoric acid solution from a trap agent input mechanism. F− which accelerates etching of a silicon nitride film is added as appropriate by sequentially inputting the additive and siloxane which increases by the sequential input is etched with hydrofluoric acid generated by decomposition of the fluoroboric acid, to thereby suppress a significant increase in the concentration of siloxane. This makes it possible to maintain respective initial etching rates of the silicon nitride film and a silicon oxide film.
摘要翻译：将含有六氟硅酸溶液（H 2 SiF 6 + H 2 O）的添加剂从添加剂输入机构依次输入到浸在浸浴中的磷酸溶液中。此外，含有氟硼酸溶液（HBF 4 + H 2 O）的捕集剂从捕集剂输入机构输入到磷酸溶液中。通过依次输入添加剂和通过顺序输入增加的硅氧烷，适当加入加氮氮化硅膜蚀刻的F-通过氟硼酸的分解产生的氢氟酸进行蚀刻，从而抑制浓度的显着增加硅氧烷。这使得可以保持氮化硅膜和氧化硅膜的各自的初始蚀刻速率。

7. 发明授权

US5401686A Method of uniformly diffusing impurities into semiconductor wafers 失效
标题翻译：将杂质均匀地扩散到半导体晶片的方法
公开(公告)号：US5401686A
公开(公告)日：1995-03-28
申请号：US909600
申请日：1992-07-07
申请人： Hiromi Kiyose
发明人： Hiromi Kiyose
IPC分类号： H01L21/22 , C30B31/12 , D21H27/00 , H01L21/223
CPC分类号： C30B31/12 , H01L21/223 , Y10S148/038
摘要： The temperature of the front heater is set to a higher value than the set temperature of the center heater and the temperature of the rear heater is set to a lower value than the set temperature of the center heater to thereby provide such a temperature gradient that the temperature of a center heater region gradually rises from the rear side toward the front side and the impurity diffusion is accelerated under the temperature gradient, whereby it is possible to compensate for the decrease in the quantity of the diffused impurity caused by the lowering of the impurity concentration of the impurity gas gradually from the rear side toward the front side, so that the impurity is uniformly diffused into the wafers located in the core pipe.
摘要翻译：前加热器的温度被设定为比中心加热器的设定温度更高的值，并且后加热器的温度被设定为比中心加热器的设定温度低的值，从而提供这样的温度梯度，使得中心加热器区域的温度从后侧朝向前侧逐渐上升，并且在温度梯度下杂质扩散加速，由此可以补偿由于杂质的降低引起的扩散杂质的量的减少杂质气体从后侧朝向前侧逐渐浓缩，从而杂质均匀地扩散到位于芯管中的晶片中。

8. 发明申请

US20090081881A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD FOR PERFORMING ETCHING PROCESS WITH PHOSPHORIC ACID SOLUTION 有权
标题翻译：用磷酸溶液进行蚀刻工艺的基板处理装置和基板处理方法
公开(公告)号：US20090081881A1
公开(公告)日：2009-03-26
申请号：US12203394
申请日：2008-09-03
申请人： Hiromi Kiyose
发明人： Hiromi Kiyose
IPC分类号： H01L21/306
CPC分类号： H01L21/31111 , H01L21/67086
摘要： An additive containing a hexafluorosilicic acid solution (H2SiF6+H2O) is sequentially inputted into a phosphoric acid solution pooled in an immersion bath from an additive input mechanism. Further, a trap agent containing a fluoroboric acid solution (HBF4+H2O) is inputted into the phosphoric acid solution from a trap agent input mechanism. F− which accelerates etching of a silicon nitride film is added as appropriate by sequentially inputting the additive and siloxane which increases by the sequential input is etched with hydrofluoric acid generated by decomposition of the fluoroboric acid, to thereby suppress a significant increase in the concentration of siloxane. This makes it possible to maintain respective initial etching rates of the silicon nitride film and a silicon oxide film.
摘要翻译：将含有六氟硅酸溶液（H 2 SiF 6 + H 2 O）的添加剂从添加剂输入机构依次输入到浸在浸浴中的磷酸溶液中。此外，含有氟硼酸溶液（HBF 4 + H 2 O）的捕集剂从捕集剂输入机构输入到磷酸溶液中。通过依次输入添加剂和通过顺序输入增加的硅氧烷，适当加入加氮氮化硅膜蚀刻的F-通过氟硼酸的分解产生的氢氟酸进行蚀刻，从而抑制浓度的显着增加硅氧烷。这使得可以保持氮化硅膜和氧化硅膜的各自的初始蚀刻速率。

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