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    • 4. 发明申请
    • HYDROCHLORIC ACID ETCH AND LOW TEMPERATURE EPITAXY IN A SINGLE CHAMBER FOR RAISED SOURCE-DRAIN FABRICATION
    • 在一个单一的室中的氢氯酸盐和低温外延,用于提高源水排放
    • US20120142121A1
    • 2012-06-07
    • US12960736
    • 2010-12-06
    • Prasanna KhareNicolas LoubetQing Liu
    • Prasanna KhareNicolas LoubetQing Liu
    • H01L21/306
    • H01L21/02661H01L21/02639H01L29/66628H01L29/66636
    • A raised source-drain structure is formed using a process wherein a semiconductor structure is received in a process chamber that is adapted to support both an etching process and an epitaxial growth process. This semiconductor structure includes a source region and a drain region, wherein the source and drain regions each include a damaged surface layer. The process chamber is controlled to set a desired atmosphere and set a desired temperature. At the desired atmosphere and temperature, the etching process of process chamber is used to remove the damaged surface layers from the source and drain regions and expose an interface surface. Without releasing the desired atmosphere and while maintaining the desired temperature, the epitaxial growth process of the process chamber is used to grow, from the exposed interface surface, a raised region above each of the source and drain regions.
    • 使用其中半导体结构被接收在适于支持蚀刻工艺和外延生长工艺两者的处理室中的工艺来形成凸起的源极 - 漏极结构。 该半导体结构包括源极区和漏极区,其中源区和漏区各自包括受损的表面层。 控制处理室以设定所需的气氛并设定所需的温度。 在所需的气氛和温度下,处理室的蚀刻过程用于从源极和漏极区域去除损坏的表面层并暴露界面。 在不释放期望的气氛的同时保持期望的温度,处理室的外延生长过程用于从暴露的界面表面生长在源极和漏极区之上的凸起区域。
    • 9. 发明授权
    • Hydrochloric acid etch and low temperature epitaxy in a single chamber for raised source-drain fabrication
    • 在单个腔室中进行盐酸蚀刻和低温外延,用于提高源极 - 漏极制造
    • US08187975B1
    • 2012-05-29
    • US12960736
    • 2010-12-06
    • Prasanna KhareNicolas LoubetQing Liu
    • Prasanna KhareNicolas LoubetQing Liu
    • H01L21/20H01L21/302H01L21/311H01L21/461H01L21/36
    • H01L21/02661H01L21/02639H01L29/66628H01L29/66636
    • A raised source-drain structure is formed using a process wherein a semiconductor structure is received in a process chamber that is adapted to support both an etching process and an epitaxial growth process. This semiconductor structure includes a source region and a drain region, wherein the source and drain regions each include a damaged surface layer. The process chamber is controlled to set a desired atmosphere and set a desired temperature. At the desired atmosphere and temperature, the etching process of process chamber is used to remove the damaged surface layers from the source and drain regions and expose an interface surface. Without releasing the desired atmosphere and while maintaining the desired temperature, the epitaxial growth process of the process chamber is used to grow, from the exposed interface surface, a raised region above each of the source and drain regions.
    • 使用其中半导体结构被接收在适于支持蚀刻工艺和外延生长工艺两者的处理室中的工艺来形成凸起的源极 - 漏极结构。 该半导体结构包括源极区和漏极区,其中源区和漏区各自包括受损的表面层。 控制处理室以设定所需的气氛并设定所需的温度。 在所需的气氛和温度下,处理室的蚀刻过程用于从源极和漏极区域去除损坏的表面层并暴露界面。 在不释放期望的气氛的同时保持期望的温度,处理室的外延生长过程用于从暴露的界面表面生长在源极和漏极区之上的凸起区域。