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1. 发明授权

US07576337B2 Power supply for an ion implantation system 有权
标题翻译：离子注入系统的电源
公开(公告)号：US07576337B2
公开(公告)日：2009-08-18
申请号：US11620595
申请日：2007-01-05
申请人： Piotr Lubicki , Russell Low , Steve Krause , Eric Hermanson
发明人： Piotr Lubicki , Russell Low , Steve Krause , Eric Hermanson
IPC分类号： H01J37/08
CPC分类号： H02M7/103
摘要： A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.
摘要翻译：一种用于离子注入系统的电源系统。在一个具体示例性实施例中，系统可以被实现为包括低功率逆变器，堆栈驱动器和从电力逆变器接收电力源的高压发电单元的电源系统。高电压发生单元可以包括高压变压器，用于提供乘以期望输出电平并被输送到离子束加速器的输入端的输出功率。供电系统还可以包括封装高压发电单元的至少一部分的电介质外壳，从而防止内部元件的分解强度的变化。

2. 发明授权

US07453069B2 Bushing unit with integrated conductor in ion accelerating device and related method 有权
标题翻译：带集成导体的衬套单元，用于离子加速装置及相关方法
公开(公告)号：US07453069B2
公开(公告)日：2008-11-18
申请号：US11567400
申请日：2006-12-06
申请人： James P. Buonodono , Edward W. Bell , Piotr Lubicki
发明人： James P. Buonodono , Edward W. Bell , Piotr Lubicki
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/032 , H01J2237/038 , H01J2237/04735
摘要： An ion accelerating device includes a series of bushing units and a series of resistor circuit units. Each resistor circuit unit is coupled to one bushing unit. A bushing unit includes three integrated conductors to establish connections to the coupled resistor circuit unit and to an immediately adjacent bushing unit such that a voltage to the bushing unit may be degraded by the resistor circuit unit before reaching the lens and that two bushing units may contact one another directly.
摘要翻译：离子加速装置包括一系列衬套单元和一系列电阻器电路单元。每个电阻电路单元耦合到一个衬套单元。衬套单元包括三个集成导体，以建立到耦合的电阻器电路单元和紧邻的衬套单元的连接，使得到达衬套单元的电压在到达透镜之前可能被电阻器电路单元降级，并且两个衬套单元可能接触彼此直接

3. 发明申请

US20130020940A1 CURRENT LIMITER FOR HIGH VOLTAGE POWER SUPPLY USED WITH ION IMPLANTATION SYSTEM 有权
标题翻译：用于离子植入系统使用的高压电源的电流限制
公开(公告)号：US20130020940A1
公开(公告)日：2013-01-24
申请号：US13187905
申请日：2011-07-21
申请人： Klaus Becker , Klaus Petry , Piotr Lubicki
发明人： Klaus Becker , Klaus Petry , Piotr Lubicki
IPC分类号： H01J7/44
CPC分类号： H01J37/241 , H01J27/022 , H01J37/3171 , H01J2237/0203 , H01J2237/0206 , H02H9/02
摘要： Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.
摘要翻译：公开了一种用于离子源组件的浪涌保护系统。该系统包括与热离子二极管和离子源组件串联耦合的高压电源。高压电源封装在压力罐中并驱动离子源组件。热离子二极管包括设置在离子源组件外壳和高压电源的输出之间的绝缘管，并且利用现有的离子源组件部件来限制离子源组件的电弧故障期间对电源的损坏。

4. 发明授权

US08766209B2 Current limiter for high voltage power supply used with ion implantation system 有权
标题翻译：用于离子注入系统的高压电源限流器
公开(公告)号：US08766209B2
公开(公告)日：2014-07-01
申请号：US13187905
申请日：2011-07-21
申请人： Klaus Becker , Klaus Petry , Piotr Lubicki
发明人： Klaus Becker , Klaus Petry , Piotr Lubicki
IPC分类号： H01J27/00
CPC分类号： H01J37/241 , H01J27/022 , H01J37/3171 , H01J2237/0203 , H01J2237/0206 , H02H9/02
摘要： Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.
摘要翻译：公开了一种用于离子源组件的浪涌保护系统。该系统包括与热离子二极管和离子源组件串联耦合的高压电源。高压电源封装在压力罐中并驱动离子源组件。热离子二极管包括设置在离子源组件外壳和高压电源的输出之间的绝缘管，并且利用现有的离子源组件部件来限制离子源组件的电弧故障期间对电源的损坏。

5. 发明申请

US20120003760A1 GLITCH CONTROL DURING IMPLANTATION 有权
标题翻译：植入过程中的控制
公开(公告)号：US20120003760A1
公开(公告)日：2012-01-05
申请号：US13160573
申请日：2011-06-15
申请人： Piotr Lubicki , Bon-Woong Koo
发明人： Piotr Lubicki , Bon-Woong Koo
IPC分类号： H01L21/66 , G21K5/00
CPC分类号： H01J37/241 , H01J37/243 , H01J37/248 , H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/0206 , H01J2237/24535
摘要： An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.
摘要翻译：公开了一种离子注入系统和方法，其中通过对注入机的电力系统的修改来最小化电压中的毛刺。这些电源修改包括更快的响应时间，输出滤波，改进的毛刺检测和消除电压消隐。通过最小化毛刺，可以在每次检测到电压毛刺时不必暂停扫描，生产具有可接受的剂量均匀性的太阳能电池。例如，通过将电压的持续时间缩短到约20-40毫秒，可以保持约3％内的剂量均匀性。

6. 发明申请

US20140021373A1 BEAMLINE ELECTRODE VOLTAGE MODULATION FOR ION BEAM GLITCH RECOVERY 审中-公开
标题翻译：光束电极电压调制用于离子束玻璃回收
公开(公告)号：US20140021373A1
公开(公告)日：2014-01-23
申请号：US13555910
申请日：2012-07-23
申请人： Piotr Lubicki , Christopher Leavitt , Timothy Miller , Bon-Woong Koo
发明人： Piotr Lubicki , Christopher Leavitt , Timothy Miller , Bon-Woong Koo
IPC分类号： G21K5/02
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/241 , H01J37/304 , H01J2237/24564
摘要： An ion implantation system and method are disclosed in which glitches in voltage are minimized by use of a modulated power supply system in the implanter. The modulated power supply system includes a traditional power supply and a control unit associated with each power supply, where the control unit is used to isolate the power supply from an electrode if a glitch or arc is detected. The control unit then restores connectivity after the glitch condition has been rectified.
摘要翻译：公开了一种离子注入系统和方法，其中通过使用注入机中的调制电源系统来最小化电压中的毛刺。调制电源系统包括传统电源和与每个电源相关联的控制单元，其中如果检测到毛刺或电弧，则使用控制单元将电源与电极隔离。然后，控制单元在毛刺状态被修正之后恢复连通性。

7. 发明申请

US20080135783A1 BUSHING UNIT WITH INTEGRATED CONDUCTOR IN ION ACCELERATING DEVICE AND RELATED METHOD 有权
标题翻译：具有集成导体在离子加速装置中的布置单元及相关方法
公开(公告)号：US20080135783A1
公开(公告)日：2008-06-12
申请号：US11567400
申请日：2006-12-06
申请人： James P. Buonodono , Edward W. Bell , Piotr Lubicki
发明人： James P. Buonodono , Edward W. Bell , Piotr Lubicki
IPC分类号： G01N23/00
CPC分类号： H01J37/3171 , H01J2237/032 , H01J2237/038 , H01J2237/04735
摘要： An ion accelerating device includes a series of bushing units and a series of resistor circuit units. Each resistor circuit unit is coupled to one bushing unit. A bushing unit includes three integrated conductors to establish connections to the coupled resistor circuit unit and to an immediately adjacent bushing unit such that a voltage to the bushing unit may be degraded by the resistor circuit unit before reaching the lens and that two bushing units may contact one another directly.
摘要翻译：离子加速装置包括一系列衬套单元和一系列电阻器电路单元。每个电阻电路单元耦合到一个衬套单元。衬套单元包括三个集成导体，以建立到耦合的电阻器电路单元和紧邻的衬套单元的连接，使得到达衬套单元的电压在到达透镜之前可能被电阻器电路单元降级，并且两个衬套单元可能接触彼此直接

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