专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100167426A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20100167426A1
公开(公告)日：2010-07-01
申请号：US12723443
申请日：2010-03-12
申请人： Naoyuki Kofuji , Hiroshi Akiyama , Kouhei Satou
发明人： Naoyuki Kofuji , Hiroshi Akiyama , Kouhei Satou
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/32136 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： The invention provides a method for overcoming the drawbacks of deteriorated throughput, deteriorated reproducibility and plasma discharge instability when continuous discharge is performed during multiple steps of plasma etching. The present invention provides a gas switching method for switching from gas supply source 101 to gas supply source 111, wherein the gas supply source 101 is switched to gas supply source 111 by opening a valve 114 in advance, setting a flow rate of MFC 112 to a flow rate used in the subsequent step, letting the gas supply source 111 to flow toward an exhaust means 5, and closing the valve 114 simultaneously when opening the valve 113, wherein a volume V1 of an area of a gas pipe 115 surrounded by the valve 113, the valve 114 and the MFC 112 is set sufficiently smaller than a volume Vo from the shower plate to the valve 113 including a gas reservoir 10 and a processing gas line 8. The present arrangement enables to prevent the occurrence of pressure undershoot and to solve the problem of discharge instability.
摘要翻译：本发明提供了一种在等离子体蚀刻的多个步骤中进行连续放电时，克服了劣化生产量，再现性劣化和等离子体放电不稳定性的缺陷的方法。本发明提供一种从气体供给源101切换到气体供给源111的气体切换方法，其中，气体供给源101通过预先打开阀114而切换到气体供给源111，将MFC112的流量设定为在后续步骤中使用的流量，使得气体供应源111朝向排气装置5流动，并且在打开阀113时同时关闭阀114，其中由管道115包围的气体管道115的区域的体积V1 阀113，阀114和MFC112被设定为足够小于从喷淋板到包括气体储存器10和处理气体管线8的阀113的体积Vo。本配置能够防止压力下冲的发生，解决放电不稳定的问题。

2. 发明申请

US20080078505A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20080078505A1
公开(公告)日：2008-04-03
申请号：US11670048
申请日：2007-02-01
申请人： Naoyuki Kofuji , Hiroshi Akiyama , Kouhei Satou
发明人： Naoyuki Kofuji , Hiroshi Akiyama , Kouhei Satou
IPC分类号： H01L21/306
CPC分类号： H01L21/32136 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： The invention provides a method for overcoming the drawbacks of deteriorated throughput, deteriorated reproducibility and plasma discharge instability when continuous discharge is performed during multiple steps of plasma etching. The present invention provides a gas switching method for switching from gas supply source 101 to gas supply source 111, wherein the gas supply source 101 is switched to gas supply source 111 by opening a valve 114 in advance, setting a flow rate of MFC 112 to a flow rate used in the subsequent step, letting the gas supply source 111 to flow toward an exhaust means 5, and closing the valve 114 simultaneously when opening the valve 113, wherein a volume V1 of an area of a gas pipe 115 surrounded by the valve 113, the valve 114 and the MFC 112 is set sufficiently smaller than a volume Vo from the shower plate to the valve 113 including a gas reservoir 10 and a processing gas line 8. The present arrangement enables to prevent the occurrence of pressure undershoot and to solve the problem of discharge instability.
摘要翻译：本发明提供了一种在等离子体蚀刻的多个步骤中进行连续放电时，克服了劣化生产量，再现性劣化和等离子体放电不稳定性的缺陷的方法。本发明提供一种从气体供给源101切换到气体供给源111的气体切换方法，其中，气体供给源101通过预先打开阀114而切换到气体供给源111，将MFC112的流量设定为在后续步骤中使用的流量，使得气体供应源111朝向排气装置5流动，并且在打开阀113时同时关闭阀门114，其中气体管道115的区域的体积V 1被阀113，阀114和MFC112被设定为充分小于从喷淋板到包括气体储存器10和加工气体管线8的阀113的体积Vo。本发明能够防止压力下冲的发生并解决放电不稳定的问题。

3. 发明申请

US20070199657A1 Apparatus and method for plasma etching 审中-公开
标题翻译：用于等离子体蚀刻的装置和方法
公开(公告)号：US20070199657A1
公开(公告)日：2007-08-30
申请号：US11500360
申请日：2006-08-08
申请人： Naoyuki Kofuji , Hiroshi Akiyama
发明人： Naoyuki Kofuji , Hiroshi Akiyama
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/32137 , H01J37/3244 , H01J37/32935
摘要： The invention aims at solving the problems of throughput deterioration, reproducibility deterioration and plasma discharge instability when performing continuous discharge during multiple steps of plasma etching. According to the present invention, the gas supply unit is operated while determining the timing for switching conditions of a plurality of plasma etching steps, and the gas flow rate and gas pressure are controlled so that the pressure of processing gas supplied from the gas supply unit to the processing chamber does not fall below a predetermined pressure immediately subsequent to switching steps. For example, upon switching processing gases, the end point of a step is predicted based on an interference film thickness meter, and prior to the end point by two seconds or more, the flow rate of MFC is set to the gas flow rate for the subsequent step and the gas is flown to the exhaust device, so that simultaneously as when the end point signal is received, the processing gases are switched by switching valves.
摘要翻译：本发明旨在解决在等离子体蚀刻的多个步骤期间执行连续放电时的吞吐量劣化，再现性劣化和等离子体放电不稳定性的问题。根据本发明，在确定多个等离子体蚀刻步骤的切换条件的定时的同时操作气体供给单元，并且控制气体流量和气体压力，使得从气体供应单元供应的处理气体的压力到切换步骤之后，处理室不会下降到预定压力以下。例如，在切换处理气体时，基于干涉膜厚度计预测台阶的终点，并且在终点2秒以上之前，将MFC的流量设定为随后的步骤和气体流到排气装置，从而同时当接收到终点信号时，处理气体由切换阀切换。

4. 发明授权

US07680563B2 Pressure control device for low pressure processing chamber 有权
标题翻译：低压处理室压力控制装置
公开(公告)号：US07680563B2
公开(公告)日：2010-03-16
申请号：US11767547
申请日：2007-06-25
申请人： Naoyuki Kofuji , Hiroshi Akiyama , Masahiro Nagatani
发明人： Naoyuki Kofuji , Hiroshi Akiyama , Masahiro Nagatani
IPC分类号： G05D16/00 , G06F19/00
CPC分类号： G05D16/2073 , Y10T137/0396 , Y10T137/2572 , Y10T137/7761 , Y10T137/7768
摘要： A control method which quickly adjusts a plasma processing apparatus to a desired pressure regardless of gas type, gas flow rate or target pressure simply by optimizing constants. The plasma processing apparatus includes: gas supply means which supplies processing gas to a low pressure processing chamber; plasma generating means which supplies electromagnetic energy to the processing gas in the low pressure processing chamber and generates plasma; exhaust means which exhausts gas in the low pressure processing chamber; gas pressure measuring means which measures gas pressure in the low pressure processing chamber; exhaust speed adjusting means which adjusts exhaust speed of gas to be exhausted by the exhaust means; and an arithmetic and control unit calculates an exhaust speed to make the gas pressure measured by the pressure measuring means equal to a target value, and controls the exhaust speed adjusting means according to the calculation result.
摘要翻译：无论气体类型，气体流量或目标压力如何，仅通过优化常数即可将等离子体处理装置快速地调节到期望压力的控制方法。等离子体处理装置包括：向低压处理室供给处理气体的气体供给单元; 等离子体产生装置，其向低压处理室中的处理气体提供电磁能并产生等离子体; 在低压处理室中排出气体的排气装置; 气体压力测量装置，其测量低压处理室中的气体压力; 排气速度调节装置，其调节由排气装置排出的气体的排气速度; 并且算术和控制单元计算使由压力测量装置测量的气体压力等于目标值的排气速度，并根据计算结果控制排气速度调节装置。

5. 发明申请

US20080154422A1 Control Method for plasma etching apparatus 审中-公开
标题翻译：等离子蚀刻装置的控制方法
公开(公告)号：US20080154422A1
公开(公告)日：2008-06-26
申请号：US12026019
申请日：2008-02-05
申请人： Naoyuki KOFUJI , Hiroshi Akiyama
发明人： Naoyuki KOFUJI , Hiroshi Akiyama
IPC分类号： G06F17/00
CPC分类号： H01L21/32137 , H01J37/3244 , H01J37/32935
摘要： The invention aims at solving the problems of throughput deterioration, reproducibility deterioration and plasma discharge instability when performing continuous discharge during multiple steps of plasma etching. According to the present invention, the gas supply unit is operated while determining the timing for switching conditions of a plurality of plasma etching steps, and the gas flow rate and gas pressure are controlled so that the pressure of processing gas supplied from the gas supply unit to the processing chamber does not fall below a predetermined pressure immediately subsequent to switching steps. For example, upon switching processing gases, the end point of a step is predicted based on an interference film thickness meter, and prior to the end point by two seconds or more, the flow rate of MFC is set to the gas flow rate for the subsequent step and the gas is flown to the exhaust device, so that simultaneously as when the end point signal is received, the processing gases are switched by switching valves.
摘要翻译：本发明旨在解决在等离子体蚀刻的多个步骤期间执行连续放电时的吞吐量劣化，再现性劣化和等离子体放电不稳定性的问题。根据本发明，在确定多个等离子体蚀刻步骤的切换条件的定时的同时操作气体供给单元，并且控制气体流量和气体压力，使得从气体供应单元供应的处理气体的压力到切换步骤之后，处理室不会下降到预定压力以下。例如，在切换处理气体时，基于干涉膜厚度计预测台阶的终点，并且在终点2秒以上之前，将MFC的流量设定为随后的步骤和气体流到排气装置，从而同时当接收到终点信号时，处理气体由切换阀切换。

6. 发明申请

US20110120649A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20110120649A1
公开(公告)日：2011-05-26
申请号：US13019754
申请日：2011-02-02
申请人： Kouhei SATOU , Go Miya , Hiroshi Akiyama
发明人： Kouhei SATOU , Go Miya , Hiroshi Akiyama
IPC分类号： C23F1/08
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.
摘要翻译：本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

7. 发明申请

US20080110569A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20080110569A1
公开(公告)日：2008-05-15
申请号：US11682382
申请日：2007-03-06
申请人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Naoshi Itabashi , Hiroshi Akiyama , Kouhei Satou
发明人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Naoshi Itabashi , Hiroshi Akiyama , Kouhei Satou
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32935 , H01J37/32972
摘要： The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.
摘要翻译：本发明提供了一种用于在确保栅电极的CD偏移的面内均匀性的同时在大尺寸基板上进行等离子体蚀刻以形成栅电极的方法和装置。本发明测量处理室中的等离子体的自由基密度分布，通过多个位置将处理气体进料到处理室中，并且控制各个处理气体的流速或组成或其上的平面上的温度分布衬底被放置或者通过多个位置将处理气体进料到处理室中，并控制处理气体的流速或组成以及放置衬底的阶段的面内温度分布。

8. 发明授权

US07887669B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07887669B2
公开(公告)日：2011-02-15
申请号：US11683040
申请日：2007-03-07
申请人： Kouhei Satou , Go Miya , Hiroshi Akiyama
发明人： Kouhei Satou , Go Miya , Hiroshi Akiyama
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.
摘要翻译：本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

9. 发明申请

US20080110400A1 VACUUM PROCESSING APPARATUS 有权
标题翻译：真空加工设备
公开(公告)号：US20080110400A1
公开(公告)日：2008-05-15
申请号：US11683040
申请日：2007-03-07
申请人： Kouhei Satou , Go Miya , Hiroshi Akiyama
发明人： Kouhei Satou , Go Miya , Hiroshi Akiyama
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.
摘要翻译：本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

10. 发明授权

US09176075B2 Contamination inspection method and contamination inspection device 有权
标题翻译：污染检查方法和污染检查装置
公开(公告)号：US09176075B2
公开(公告)日：2015-11-03
申请号：US13390958
申请日：2010-06-21
申请人： Masanori Gunji , Tomonari Morioka , Hiroshi Akiyama , Hideki Fukushima
发明人： Masanori Gunji , Tomonari Morioka , Hiroshi Akiyama , Hideki Fukushima
IPC分类号： G01N21/00 , G01N21/956 , G01N21/94
CPC分类号： G01N21/95623 , G01N21/94
摘要： Provided are a contamination inspection method and a contamination inspection device for highly accurately detecting a defect in a wafer, a liquid crystal substrate and media or the like including patterns, for example, a semiconductor device or the like. The first aspect of the present invention is a contamination inspection device comprising: an irradiation optical system for irradiating lights on the inspection target substrate; and a spatial filter for shading diffracted lights form the inspection target substrate. Herein, the spatial filter comprises: a plurality of light shading materials; a control member for changing at least one of parameters selected from a shape, an angle and an interval with respect to the light shading material, and a control unit for controlling the control members.
摘要翻译：提供了用于高精度地检测包括图案的晶片，液晶基板和介质等的缺陷的污染检查方法和污染检查装置，例如半导体装置等。本发明的第一方面是一种污染检查装置，包括：照射光学系统，用于在检查对象基板上照射光; 并且用于遮蔽衍射光的空间滤光器形成检查对象基板。这里，空间滤波器包括：多个遮光材料; 用于改变相对于遮光材料的形状，角度和间隔中选择的参数中的至少一个的控制构件，以及用于控制控制构件的控制单元。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式