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1. 发明授权

US5091617A High frequency heating apparatus using inverter-type power supply 失效
标题翻译：使用逆变器电源的高频加热装置
公开(公告)号：US5091617A
公开(公告)日：1992-02-25
申请号：US526521
申请日：1990-05-22
申请人： Naoyoshi Maehara , Takahiro Matsumoto , Kazuho Sakamoto , Daisuke Bessyo , Takashi Niwa , Shigeru Kusunoki , Takao Shitaya
发明人： Naoyoshi Maehara , Takahiro Matsumoto , Kazuho Sakamoto , Daisuke Bessyo , Takashi Niwa , Shigeru Kusunoki , Takao Shitaya
IPC分类号： H05B6/66 , H05B6/68
CPC分类号： H05B6/666 , H05B6/685
摘要： A high-frequency heating apparatus comprises an inverter including a semiconductor switch and a resonance capacitor, a boosting transformer for a supplying high-voltage power and heater to a magnetron an inductance device inserted in the heater circuit of the magnetron, and an inverter control unit for controlling the semiconductor switch. The inverter control unit is controlled by a start control at the start time of the inverter so that the conduction time of the semiconductor switch becomes shorter than that under a normal operating condition and the non-conduction time thereof becomes longer than that under a normal operating condition and so that the switching period of the semiconductor switch becomes substantially an integral multiple of a resonance period of the resonance circuit formed by the resonance capacitor, whereby the operating frequency of the inverter at the time of starting thereof becomes substantially equal to its normal operating frequency.

2. 发明授权

US4886951A Power supply for a magnetron having a rectifying circuit, switching circuit, and transformer 失效
标题翻译：具有整流电路，开关电路和变压器的磁控管的电源
公开(公告)号：US4886951A
公开(公告)日：1989-12-12
申请号：US189170
申请日：1988-05-02
申请人： Takahiro Matsumoto , Haruo Suenaga , Naoyoshi Maehara , Kazuho Sakamoto , Takashi Niwa , Daisuke Bessyo , Shigeru Kusunoki , Takao Shitaya
发明人： Takahiro Matsumoto , Haruo Suenaga , Naoyoshi Maehara , Kazuho Sakamoto , Takashi Niwa , Daisuke Bessyo , Shigeru Kusunoki , Takao Shitaya
IPC分类号： H05B6/68 , H01F27/30 , H01J20060101 , H02M3/335 , H02M7/527 , H03B9/10 , H03C20060101 , H05B6/66
CPC分类号： H05B6/666 , H02M3/33507 , H02M3/33523 , H03B9/10 , H05B2206/043
摘要： A power supply for a magnetron includes a rectifying circuit, a switching circuit, and a transformer. The rectifying circuit converts an ac-power source signal into a dc-power source signal. The switching circuit converts the dc-power source signal output from the rectifying circuit into a high-frequency signal in accordance with a driving circuit. A transformer connected to the switching circuit converts the high-frequency signal into a high-voltage high-frequency signal for driving the magnetron. The transformer includes a primary winding connected to the switching circuit, a secondary winding connected to the magnetron, a tertiary winding connected to a cathode heater of said magnetron, and a fourth winding connected to the driving circuit. The coupling coefficient between the fourth winding and the second winding is larger than the coupling coefficient between the fourth winding and the primary winding.
摘要翻译：用于磁控管的电源，其具有逆变器电路，高压变压器，磁控管。为了缩短从磁控管的功率供给到阴极至通过振荡开始到达额定输出所需的时间，提供了用于检测磁控管的振荡开始时间点的机构，适于在振荡之后立即进行控制操作以进行额定输出。在高压变压器上设置用于输出电压检测的绕组，以检测磁控管的振荡。

3. 发明授权

US4812960A Power feeding apparatus 失效
标题翻译：供电设备
公开(公告)号：US4812960A
公开(公告)日：1989-03-14
申请号：US131717
申请日：1987-12-11
申请人： Kazuho Sakamoto , Takao Shitaya , Shigeru Kusunoki , Naoyoshi Maehara , Takashi Niwa , Takahiro Matsumoto , Daisuke Bessyo
发明人： Kazuho Sakamoto , Takao Shitaya , Shigeru Kusunoki , Naoyoshi Maehara , Takashi Niwa , Takahiro Matsumoto , Daisuke Bessyo
IPC分类号： H02M3/325 , H05B6/66 , H02M3/335
CPC分类号： H05B6/666
摘要： A power feeding apparatus which is used in a high-frequency heater or the like, is further power-converted by a transformer after the power provided by the power supply such as commercial power supply or the like has been converted into the high-frequency power by a transducer including a semiconductor, feeds the converted power into the load having the unidirectional electrical current characteristics of magnetron or the like. The generating voltage is dropped so that the stable power may be fed without the corona discharge and the acr discharge to be caused, the insulating withstand voltage between the windings of the transformer, the pulling of the wirings, and the insulating withstand voltage may be reduced.

4. 发明授权

US4851629A High-frequency heating device 失效
标题翻译：高频加热装置
公开(公告)号：US4851629A
公开(公告)日：1989-07-25
申请号：US208490
申请日：1988-06-20
申请人： Daisuke Bessyo , Naoyoshi Maehara , Kazuho Sakamoto , Shigeru Kusunoki , Takahiro Matsumoto
发明人： Daisuke Bessyo , Naoyoshi Maehara , Kazuho Sakamoto , Shigeru Kusunoki , Takahiro Matsumoto
IPC分类号： H01J23/15
CPC分类号： H01J23/15
摘要： In a high-frequency heating device for driving a magnetron at a high frequency between 20 and 50 KHz, the magnetron is provided with a plurality of choke coils, each of which consists of a magnetic core having a sectional area between 40 to 70 mm.sup.2 and an electric wire around the magnetic core and having a diameter between 1.2 and 1.6 mm. In such a construction, the magnetron can be driven, using the high frequency with reduced thermal loss of the choke coil and restrained heat generation.
摘要翻译：在用于驱动20〜50KHz之间的高频磁控管的高频加热装置中，磁控管设置有多个扼流线圈，每个扼流线圈由截面积在40至70mm 2之间的磁芯和围绕磁芯的电线，其直径在1.2和1.6mm之间。在这种结构中，可以使用高频率驱动磁控管，减少扼流圈的热损失并抑制发热。

5. 发明授权

US4977301A High-frequency heating apparatus using frequency-converter-type power supply 失效
标题翻译：高频加热装置采用变频器式电源
公开(公告)号：US4977301A
公开(公告)日：1990-12-11
申请号：US417774
申请日：1989-10-06
申请人： Naoyoshi Maehara , Daisuke Bessyo , Takahiro Matsumoto , Shigeru Kusunoki
发明人： Naoyoshi Maehara , Daisuke Bessyo , Takahiro Matsumoto , Shigeru Kusunoki
IPC分类号： H01F27/36 , H05B6/64 , H05B6/66
CPC分类号： H05B6/64 , H01F27/36 , H01F27/362 , H05B6/66 , Y02B40/143
摘要： A high-frequency heating apparatus comprises a power supply including a commercial power supply or a battery, a frequency converter for converting the power of the power supply into high-frequency power, a boosting transformer for increasing the voltage of the output of the frequency converter, and a magnetron for receiving the output from the boosting transformer. The apparatus further comprises a shield member made of a non-magnetic conductive material and forming a substantially electrical open loop in the winding direction of the primary winding between the primary and secondary windings of the boosting transformer. The shield member is connected to the core or the housing of the boosting transformer thereby substantially containing a high-voltage circuit in the shield space. High safety of the high-frequency heating apparatus is thus assured without grounding the housing.

6. 发明授权

US5250775A Electric cooking apparatus adapted for generating high power output containing a battery 失效
标题翻译：适于产生包含电池的高功率输出的电烹饪设备
公开(公告)号：US5250775A
公开(公告)日：1993-10-05
申请号：US849976
申请日：1992-03-12
申请人： Naoyoshi Maehara , Daisuke Bessyo , Yuji Nakabayashi , Makoto Shibuya , Takahiro Matsumoto , Shigeru Kusunoki , Susumu Kiritoshi
发明人： Naoyoshi Maehara , Daisuke Bessyo , Yuji Nakabayashi , Makoto Shibuya , Takahiro Matsumoto , Shigeru Kusunoki , Susumu Kiritoshi
IPC分类号： H02J3/32 , H02M1/00 , H02M1/42 , H02M3/335 , H05B6/68
CPC分类号： H05B6/685 , H02J3/32 , H02M1/425 , H02M3/335 , Y02B40/143 , Y02B70/126 , Y10T307/50 , Y10T307/658
摘要： An electric cooking apparatus includes a single power converter section for converting power supplied from an external AC power source. A heating-energy radiator section receives the converted power from the power converter section and radiates heating energy to a heating chamber. A battery is also provided for supplying power to the power converter section such that a sum of the power from the external AC power source and the battery is converted by the power converting section when an instantaneous voltage of the external AC power source is smaller than a predetermined voltage level, which predetermined voltage level is smaller than a maximum instantaneous voltage of the external AC power source.

7. 发明授权

US4704674A Power feed apparatus for load having reverse blocking characteristics 失效
标题翻译：具有反向阻塞特性的负载供电装置
公开(公告)号：US4704674A
公开(公告)日：1987-11-03
申请号：US863251
申请日：1986-05-14
申请人： Naoyoshi Maehara , Takahiro Matsumoto , Shigeru Kusunoki , Kazuho Sakamoto , Makoto Mihara
发明人： Naoyoshi Maehara , Takahiro Matsumoto , Shigeru Kusunoki , Kazuho Sakamoto , Makoto Mihara
IPC分类号： H02M3/335 , H02M7/48 , H05B6/66
CPC分类号： H05B6/66 , H02M3/335 , Y02B40/143
摘要： A power feed apparatus in which a means for by-passing the current reversely biasing the load is used for the normally used rectification means when the power converted by the transformer is fed to the reversely blocking characteristics like magnetron, whereby the price is lower and the shape is more compact without the use of the rectifier, because of the combination construction of the reverse bias current by-pass means and the inductance element provided in the load current path with respect to the non-linear load like the magnetron.
摘要翻译：当将由变压器转换的功率馈送到诸如磁控管的反向阻塞特性时，将用于使逆向施加负载的电流旁路的装置用于常用的整流装置，由此价格较低，并且由于反向偏置电流旁路装置和负载电流路径中设置的电感元件相对于诸如磁控管的非线性负载的组合结构，因此形状更紧凑，不需要使用整流器。

8. 发明授权

US4672180A Heating apparatus with piezoelectric device sensor 失效
标题翻译：带压电装置传感器的加热装置
公开(公告)号：US4672180A
公开(公告)日：1987-06-09
申请号：US850571
申请日：1986-04-11
申请人： Shigeru Kusunoki , Naoyoshi Maehara
发明人： Shigeru Kusunoki , Naoyoshi Maehara
IPC分类号： H05B6/64 , B01J19/12 , F24C7/02 , G01K7/00 , H05B6/68 , H05B6/80 , G01R27/26
CPC分类号： H05B6/6435 , B01J19/126 , H05B6/642 , H05B6/645 , H05B6/6458 , H05B6/666 , B01J2219/1215
摘要： In an exhaust passage (37) of a heating apparatus, a piezoelectric device sensor (26) is provided for detecting the heating condition of a heated object (32), such as food in a microwave open heating chamber (31). A piezoelectric device of the sensor may be contained within a metal casing (53) and be hermetically sealed. An output signal from the piezoelectric device sensor is processed by circuitry including an amplifier (27) having a predetermined frequency response so that only particular frequency components lower than that of a conventional a.c. supply are amplified and then compared with a threshold to detect whether a sufficient amount of moisture of hot steam is emitted from the object in the heating chamber of the heating apparatus. The invention may be applied to prevent overheating of food in a microwave oven, temperature control of chemical processes, or the like, to control heating time.
摘要翻译：在加热装置的排气通路（37）中，设置有用于检测加热物（32）在微波开放加热室（31）内的食品的加热状态的压电装置传感器（26）。传感器的压电装置可以容纳在金属壳体（53）内并被密封。来自压电装置传感器的输出信号由包括具有预定频率响应的放大器（27）的电路处理，使得仅特定频率分量低于常规直流电压的特定频率分量。电源被放大，然后与阈值进行比较，以检测是否从加热装置的加热室中的物体发出足够量的热蒸汽的水分。本发明可以应用于防止微波炉中的食物过热，化学处理的温度控制等，以控制加热时间。

9. 发明授权

US09041097B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09041097B2
公开(公告)日：2015-05-26
申请号：US13849344
申请日：2013-03-22
申请人： Shigeru Kusunoki
发明人： Shigeru Kusunoki
IPC分类号： H01L29/66 , H01L29/16 , H01L29/423 , H01L29/739 , H01L29/49
CPC分类号： H01L29/66666 , H01L29/1602 , H01L29/1608 , H01L29/4232 , H01L29/4916 , H01L29/7397
摘要： A semiconductor device includes a channel layer formed on a substrate, an insulating layer formed in contact with the channel layer, an impurity-doped first semiconductor layer formed on an opposite side of the insulating layer from the channel layer, an impurity-doped second semiconductor layer formed on an opposite side of the first semiconductor layer from the insulating layer, and a gate electrode formed on an opposite side of the second semiconductor layer from the first semiconductor layer. A quotient of an impurity density of the first semiconductor layer divided by a relative permittivity of the first semiconductor layer is greater than a quotient of an impurity density of the second semiconductor layer divided by a relative permittivity of the second semiconductor layer.
摘要翻译：半导体器件包括形成在衬底上的沟道层，与沟道层接触形成的绝缘层，形成在绝缘层与沟道层相反的一侧的杂质掺杂的第一半导体层，杂质掺杂的第二半导体在第一半导体层的与绝缘层相反的一侧形成的层，以及形成在第二半导体层与第一半导体层相反的一侧上的栅电极。第一半导体层的杂质浓度除以第一半导体层的相对介电常数的商大于第二半导体层的杂质浓度除以第二半导体层的相对介电常数的商。

10. 发明授权

US08853737B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08853737B2
公开(公告)日：2014-10-07
申请号：US13493745
申请日：2012-06-11
申请人： Shigeru Kusunoki
发明人： Shigeru Kusunoki
IPC分类号： H01L29/739 , H01L27/088 , H01L29/78 , H01L29/40 , H01L49/02 , H01L29/06 , H01L27/092 , H01L21/8238 , H03K17/08
CPC分类号： H01L29/7396 , H01L21/823814 , H01L21/823878 , H01L27/0921 , H01L28/20 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/404 , H01L29/405 , H01L29/407 , H01L29/7397 , H01L29/7817 , H01L29/7824 , H01L2924/0002 , H03K17/08 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate including a semiconductor layer, a power device formed in the semiconductor substrate, a plurality of concentric guard rings formed in the semiconductor substrate and surrounding the power device, and voltage applying means for applying successively higher voltages respectively to the plurality of concentric guard rings, with the outermost concentric guard ring having the highest voltage applied thereto.
摘要翻译：半导体器件包括半导体衬底，其包括半导体层，形成在半导体衬底中的功率器件，形成在半导体衬底中并围绕功率器件的多个同心保护环;以及电压施加装置，用于分别向多个同心保护环，最外面的同心保护环具有施加到其上的最高电压。

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