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1. 发明申请

US20070086143A1 Plasma generator and plasma etching apparatus 审中-公开
标题翻译：等离子体发生器和等离子体蚀刻装置
公开(公告)号：US20070086143A1
公开(公告)日：2007-04-19
申请号：US10596161
申请日：2004-11-29
申请人： Yasuyuki Hayashi , Shoichi Murakami , Takeshi Habe , Naoya Ikemoto
发明人： Yasuyuki Hayashi , Shoichi Murakami , Takeshi Habe , Naoya Ikemoto
IPC分类号： H01T23/00
CPC分类号： H01J37/3211 , H01J37/321
摘要： A plasma generator for generating a plasma exhibiting a uniform etching rate in a circumferential direction of a sample and a plasma etching device enabling a uniform etching in a circumferential direction of a sample are provided. To generate a plasma of a process gas, the process gas is introduced into a plasma generating chamber while a predetermined pressure is kept, and a high-frequency alternating voltage is applied to a coil. By applying an alternating voltage is applied to a substrate electrode, the plasma generated in the plasma generating chamber is brought into a reaction chamber and a sample is etched. The coil is not wound in a uniform helical shape. One turn of the coil has a first winding portion wound horizontally or generally horizontally and a second winding portion wound at a sharply inclined angle.
摘要翻译：提供一种等离子体发生器，用于产生在样品的圆周方向上具有均匀蚀刻速率的等离子体和能够在样品的圆周方向上均匀蚀刻的等离子体蚀刻装置。为了产生处理气体的等离子体，在保持预定压力的同时将处理气体引入等离子体发生室，并且向线圈施加高频交流电压。通过施加向基板电极施加交流电压，将等离子体发生室中产生的等离子体进入反应室，并对样品进行蚀刻。线圈未卷绕成均匀的螺旋形状。线圈的一圈具有水平地或大致水平地缠绕的第一绕组部分和以锐角倾斜地缠绕的第二绕组部分。

2. 发明授权

US09123542B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US09123542B2
公开(公告)日：2015-09-01
申请号：US14237147
申请日：2012-08-16
申请人： Shoichi Murakami , Naoya Ikemoto
发明人： Shoichi Murakami , Naoya Ikemoto
IPC分类号： H01L21/04 , H01L21/768 , H01L21/3065 , H01L21/308 , H01L29/16
CPC分类号： H01L21/0475 , H01L21/3065 , H01L21/3081 , H01L21/3085 , H01L21/76813 , H01L21/76822 , H01L29/1608
摘要： A plasma etching method forms a tapered recess portion in a wide-gap semiconductor substrate. The method includes forming on the substrate K an etching film having an etching speed higher than that of the substrate K, and forming a mask M having an opening on the high-speed etching film. The substrate K with the etching film and the mask is then placed on a platen and heated to a temperature equal to or higher than 200 ° C., a plasma is generated from an etching gas supplied into a processing chamber, and a bias potential is applied to the platen to etch substrate.
摘要翻译：等离子体蚀刻方法在宽间隙半导体衬底中形成锥形凹部。该方法包括在基板K上形成蚀刻速度高于基板K的蚀刻速度的蚀刻膜，并在高速蚀刻膜上形成具有开口的掩模M. 然后将具有蚀刻膜和掩模的基板K放置在压板上并加热至等于或高于200℃的温度，从供给到处理室中的蚀刻气体产生等离子体，偏置电位为施加到压板以蚀刻衬底。

3. 发明申请

US20140187048A1 Plasma Etching Method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20140187048A1
公开(公告)日：2014-07-03
申请号：US14237147
申请日：2012-08-16
申请人： Shoichi Murakami , Naoya Ikemoto
发明人： Shoichi Murakami , Naoya Ikemoto
IPC分类号： H01L21/04
CPC分类号： H01L21/0475 , H01L21/3065 , H01L21/3081 , H01L21/3085 , H01L21/76813 , H01L21/76822 , H01L29/1608
摘要： An object of the present invention is to provide a plasma etching method capable of forming a tapered recess portion in a wide-gap semiconductor substrate. As a solving means therefor, a high speed etching film E an etching speed of which is higher than that of a wide-gap semiconductor substrate K is formed on the wide-gap semiconductor substrate K, and a mask M having an opening is formed on the high speed etching film E. Thereafter, the wide-gap semiconductor substrate K having the high speed etching film E and the mask M formed thereon is placed on a platen and is heated to a temperature equal to or higher than 200° C., then a plasma is generated form an etching gas supplied into a processing chamber and a bias potential is applied to the platen, and thereby the wide-gap semiconductor substrate K is etched.
摘要翻译：本发明的目的是提供一种能够在宽间隙半导体衬底中形成锥形凹部的等离子体蚀刻方法。作为其解决手段，在宽间隙半导体基板K上形成蚀刻速度高于宽间隙半导体基板K的蚀刻速度的高速蚀刻膜E，并且具有开口的掩模M形成在高速蚀刻膜E.此后，将具有高速蚀刻膜E的宽间隙半导体衬底K和形成在其上的掩模M放置在压板上，并被加热到等于或高于200℃的温度，然后从供应到处理室中的蚀刻气体产生等离子体，并将偏压电位施加到压板，从而蚀刻宽间隙半导体衬底K.

4. 发明授权

US08859434B2 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US08859434B2
公开(公告)日：2014-10-14
申请号：US13809624
申请日：2011-07-11
申请人： Akimitsu Oishi , Shoichi Murakami
发明人： Akimitsu Oishi , Shoichi Murakami
IPC分类号： H01L21/302 , H01L21/3065 , H01L29/16
CPC分类号： H01L21/30655 , H01L29/1608
摘要： The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C, SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.
摘要翻译：本发明涉及能够以更高的精度蚀刻碳化硅衬底的蚀刻方法。将碳化硅衬底K加热到等于或高于200℃的温度的第一蚀刻步骤，将SF6气体供应到处理室中，并且从SF 6气体产生等离子体，并且将偏置电位施加到压板，从而各向同性地蚀刻碳化硅衬底K;以及第二蚀刻步骤，其中将碳化硅衬底K加热到等于或高于200℃的温度，将SF 6气体和O 2气体供应到处理室中，从SF6气体和O2气体产生等离子体，并且将偏置电位施加到其上放置碳化硅衬底K的压板上，从而蚀刻碳化硅衬底K，同时在硅上形成氧化硅膜作为钝化膜交替地重复碳化物衬底K.

5. 发明申请

US20050059669A1 M-substituted benzoic acid derivatives having integrin alpha v beta 3 antagonistic activity 审中-公开
标题翻译：具有整合素αvβ3拮抗活性的M取代苯甲酸衍生物
公开(公告)号：US20050059669A1
公开(公告)日：2005-03-17
申请号：US10944712
申请日：2004-09-21
申请人： Keiichi Ajito , Minoru Ishikawa , Dai Kubota , Shoichi Murakami , Mikio Yamamoto , Naokazu Yahata , Kazuyuki Fujishima , Makoto Oyama
发明人： Keiichi Ajito , Minoru Ishikawa , Dai Kubota , Shoichi Murakami , Mikio Yamamoto , Naokazu Yahata , Kazuyuki Fujishima , Makoto Oyama
IPC分类号： C07C229/54 , C07C229/60 , C07D239/14 , C07D239/42 , C07D401/12 , A61K31/496 , A61K31/454 , C07D43/02
CPC分类号： C04B35/632 , C07C229/54 , C07C229/60 , C07D239/14 , C07D239/42 , C07D401/12
摘要： An object of the present invention is to provide m-substituted benzoic acid derivatives having integrin αvβ3 antagonistic activity. The derivatives according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts or solvates thereof, which are useful for the treatment or prevention of cardiovascular diseases, angiogenesis-related diseases, cerebrovascular diseases, cancers and metastasis thereof, immunological diseases, osteopathy and other diseases: wherein A represents an optionally substituted heterocyclic group containing two nitrogen atoms, a bicylic group or the like; D represents a bond, >NR4, >CR5R6, O, S, or —NR4—CR5R6—; X represents CH or N; R7 and R8 represent hydroxyl, alkyl or the like; Q represents >C═O or the like; R9 represents hydrogen, alkyl or the like; J represents a bond or alkylene; R10 represents optionally substituted hydroxyl, amino or the like; R11 represents hydrogen, alkyl or the like; m is 0 to 5; n is 0 to 4; and p and q are each 0 to 3.
摘要翻译：本发明的目的是提供具有整合素α噬菌体拮抗活性的m取代苯甲酸衍生物。根据本发明的衍生物是由式（I）表示的化合物或其药学上可接受的盐或溶剂化物，其可用于治疗或预防心血管疾病，血管生成相关疾病，脑血管疾病，癌症及其转移，免疫疾病，骨病和其他疾病：其中A表示任选取代的含有两个氮原子的杂环基团，二等基团等; D表示键，NR 4，CR 5 R 6，O，S或-NR 4 -CR 5 R 6 - 。 X表示CH或N; R 7和R 8代表羟基，烷基等; Q表示> C = O等; R 9表示氢，烷基等; J表示键或亚烷基; R 10表示任选取代的羟基，氨基等; R 11表示氢，烷基等; m为0〜5; n为0〜4; p和q各自为0〜3。

6. 发明授权

US06750219B1 &OHgr;-amino-&agr;-hydroxycarboxylic acid derivatives having integrin &agr;&ngr;&bgr;3 antagonistic activity 失效
标题翻译：具有整合素α2β3拮抗活性的ω-氨基-α-羟基羧酸衍生物
公开(公告)号：US06750219B1
公开(公告)日：2004-06-15
申请号：US10048914
申请日：2002-02-05
申请人： Keiichi Ajito , Naokazu Yahata , Minoru Ishikawa , Dai Kubota , Shoichi Murakami , Mikio Yamamoto , Kazuyuki Fujishima , Shuichi Gomi , Shokichi Ouchi
发明人： Keiichi Ajito , Naokazu Yahata , Minoru Ishikawa , Dai Kubota , Shoichi Murakami , Mikio Yamamoto , Kazuyuki Fujishima , Shuichi Gomi , Shokichi Ouchi
IPC分类号： C07D40304
CPC分类号： C07D239/42
摘要： An objective of the present invention is to provide highly water-soluble compounds having integrin &agr;v&bgr;3 antagonistic activity. The compounds according to the present invention are compounds represented by formula (I) and pharmaceutically acceptable salts or solvates thereof: wherein A represents a two nitrogen atom-containing optionally substituted saturated or unsaturated five- to seven-membered heterocyclic group, which is optionally condensed with another carbocyclic ring or heterocyclic ring to form a bicyclic group, or —C(—NR1R2)(═NR3) wherein R1, R2, and R3 represent hydrogen, alkyl or the like; D represents a bond, >NR4, wherein R4 represents hydrogen or optionally substituted alkyl, —O—, or —S—; X and Z represent either CH or N; R7 and R8 represent C1-6 alkyl, halogen, oxygen or the like; Q represents >C═O, >CHR13 or >CHOR13 wherein R13 represents hydrogen or alkyl; R9 represents hydrogen, alkyl or the like; J represents a bond or alkylene having 1 to 3 carbon atoms; R10 and R11 represent hydrogen, alkyl or the like; m is an integer of 0 to 5; n is an integer of 0 to 4; and p and q are an integer of 1 to 3.
摘要翻译：本发明的目的是提供具有整合素α2拮抗活性的高水溶性化合物。根据本发明的化合物是由式（I）表示的化合物及其药学上可接受的盐或溶剂化物：其中A表示两个含有氮原子的任选取代的饱和或不饱和的五至七元杂环基，其任选地稠合与另一个碳环或杂环形成双环基团，或-C（-NR 1 R 2）（= NR 3）（其中R 1，R 2和R 3）代表氢，烷基等; D表示键，NR 4，其中R 4表示氢或任选取代的烷基，-O-或-S-; X和Z表示CH或N; R 7和R 8表示C 1-6烷基，卤素，氧等; Q表示C = O，> CHR 13或CHOR 13，其中R 13表示氢或烷基; R 9表示氢，烷基等; J表示碳原子数1〜3的键或亚烷基。 R 10和R 11代表氢，烷基等; m为0〜5的整数。 n为0〜4的整数。 p和q为1〜3的整数。

7. 发明申请

US20140220711A1 APPARATUS, METHOD AND PROGRAM FOR MANUFACTURING NITRIDE FILM 有权
标题翻译：装置，方法和程序制造氮化物膜
公开(公告)号：US20140220711A1
公开(公告)日：2014-08-07
申请号：US14238289
申请日：2012-05-22
申请人： Shoichi Murakami , Masayasu Hatashita
发明人： Shoichi Murakami , Masayasu Hatashita
IPC分类号： H01L21/02 , H01L21/66
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/509 , H01L21/0214 , H01L21/02274 , H01L22/12
摘要： A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.
摘要翻译：氮化膜制造装置通过等离子体CVD技术在设置在室中的基板上形成氮化膜。具体而言，氮化膜制造装置包括：控制器，用于计算用于施加具有较高频率的第一高频电力的第一周期和用于施加具有相对较低频率的第二高频功率的第二周期，以获得期望的压缩应力或氮化物膜的拉伸应力，基于氮化物膜的折射率的分布和/或氮化物膜的沉积速率的分布，该分布落在预定数值范围内并且使用第一高频功率获得和/或独立地施加的用于形成氮化物膜的第二高频电力。

8. 发明申请

US20130115772A1 Etching Method 有权
标题翻译：蚀刻方法
公开(公告)号：US20130115772A1
公开(公告)日：2013-05-09
申请号：US13809624
申请日：2011-07-11
申请人： Akimitsu Oishi , Shoichi Murakami
发明人： Akimitsu Oishi , Shoichi Murakami
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , H01L29/1608
摘要： The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.
摘要翻译：本发明涉及能够以更高的精度蚀刻碳化硅衬底的蚀刻方法。将碳化硅衬底K加热至等于或高于200℃的第一蚀刻步骤，将SF 6气体供应到处理室中，并从SF 6气体产生等离子体，并将偏置电位施加到压板，从而各向同性蚀刻碳化硅衬底K;以及第二蚀刻步骤，其中将碳化硅衬底K加热到等于或高于200℃的温度，将SF 6气体和O 2气体供应到处理室并且从SF 6气体和O 2气体产生等离子体，并且将偏置电位施加到其上放置碳化硅衬底K的压板上，从而蚀刻碳化硅衬底K，同时在其上形成氧化硅膜作为钝化膜交替地重复碳化硅衬底K.

9. 发明授权

US08148504B2 Aminoglycoside antibiotics 有权
标题翻译：氨基糖苷类抗生素
公开(公告)号：US08148504B2
公开(公告)日：2012-04-03
申请号：US12227861
申请日：2007-06-01
申请人： Yoshihiko Kobayashi , Yoshihisa Akiyama , Takeshi Murakami , Nobuto Minowa , Masaki Tsushima , Yukiko Hiraiwa , Shoichi Murakami , Mitsuhiro Abe , Kazushige Sasaki , Shigeru Hoshiko , Toshiaki Miyake , Yoshiaki Takahashi , Daishiro Ikeda
发明人： Yoshihiko Kobayashi , Yoshihisa Akiyama , Takeshi Murakami , Nobuto Minowa , Masaki Tsushima , Yukiko Hiraiwa , Shoichi Murakami , Mitsuhiro Abe , Kazushige Sasaki , Shigeru Hoshiko , Toshiaki Miyake , Yoshiaki Takahashi , Daishiro Ikeda
IPC分类号： C07H13/02
CPC分类号： C07H15/234 , C07H15/224
摘要： This invention relates to novel aminoglycoside antibiotics, which have potent antimicrobial activity against bacteria, which induce infectious diseases, particularly MRSA, and has no significant nephrotoxicity, and process for producing them. More particularly, the present invention relates to compounds represented by formula (Ia) or their pharmacologically acceptable salts or solvates, or their diastereomer mixtures, antimicrobial agents comprising them, and a process for producing them.
摘要翻译：本发明涉及对细菌具有强力抗微生物活性的新型氨基糖苷类抗生素，其诱导感染性疾病，特别是MRSA，并且没有显着的肾毒性，以及生产它们的方法。更具体地，本发明涉及由式（Ia）表示的化合物或其药理学上可接受的盐或溶剂合物或其非对映体混合物，包含它们的抗微生物剂及其制备方法。

10. 发明授权

US07754613B2 Etching method and etching apparatus 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US07754613B2
公开(公告)日：2010-07-13
申请号：US11459646
申请日：2006-07-25
申请人： Shoichi Murakami , Takashi Yamamoto , Tatsuo Hiramura
发明人： Shoichi Murakami , Takashi Yamamoto , Tatsuo Hiramura
IPC分类号： H01L21/311 , H01L21/461 , H01L21/302
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32449 , H01J37/32706 , H01J2237/334 , H01L21/30655
摘要： Etching and protective-film deposition operations E and D are in alternation repeatedly executed on a silicon substrate carried on a platform within a processing chamber. With gas inside the processing chamber having been exhausted to pump down the chamber interior, in the etching operation E, the substrate is etched by supplying etching gas into the chamber and converting it into plasma and applying a bias potential to the platform, and in the protective-film deposition operation D, a protective film is formed on the silicon substrate by supplying protective-film deposition gas into the processing chamber and converting it into plasma. When a predetermined time prior to the close of operations E and D (time intervals indicated by reference marks Ee and De) is reached, the supply of etching or protective-film deposition gas is halted, and the exhaust flow rate of gas exhausted from the chamber is made greater than that previously.
摘要翻译：蚀刻和保护膜沉积操作E和D在处理室内的平台上承载的硅衬底上重复执行。由于处理室内的气体已被排出以抽空腔室内部，所以在蚀刻操作E中，通过向腔室中提供蚀刻气体并将其转换成等离子体并向平台施加偏置电位来蚀刻衬底，并且在保护膜沉积操作D，通过向处理室中提供保护膜沉积气体并将其转换成等离子体，在硅衬底上形成保护膜。当达到操作结束E和D（由参考标记Ee和De指示的时间间隔）之前的预定时间时，停止供应蚀刻或保护膜沉积气体，并且从室比以前更大。

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