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1. 发明授权

US08697899B2 Methods for producing iron methacrylate and hydroxyalkyl methacrylate 有权
标题翻译：生产甲基丙烯酸铁和甲基丙烯酸羟烷基酯的方法
公开(公告)号：US08697899B2
公开(公告)日：2014-04-15
申请号：US13822017
申请日：2011-12-26
申请人： Naoshi Murata , Kuniyoshi Ogura , Takeshi Matsuo , Akira Yoshioka
发明人： Naoshi Murata , Kuniyoshi Ogura , Takeshi Matsuo , Akira Yoshioka
IPC分类号： C07F15/00 , C07C67/26
CPC分类号： B01J31/12 , B01J31/2226 , B01J2531/842 , C07C51/412 , C07C67/26 , C07C69/54 , C07C57/04
摘要： There is provided a method for producing iron methacrylate being inexpensive, and being high in activity and selectivity and good in solubility to a reaction liquid when being used in production of a hydroxyalkyl methacrylate as a catalyst. The method for producing iron methacrylate for production of a hydroxyalkyl methacrylate according to the present invention includes subjecting a mixture of a metallic iron having an oxygen atom content by XRF analysis of the surface thereof of 6% by mass or lower, and methacrylic acid to a heat treatment at 95° C. or higher and lower than 110° C. for 100 to 600 min. The method for producing a hydroxyalkyl methacrylate according to the present invention includes reacting an alkylene oxide with methacrylic acid to produce the hydroxyalkyl methacrylate, wherein iron methacrylate produced by the method according to the present invention is used as a catalyst.
摘要翻译：本发明提供了生产廉价的甲基丙烯酸铁的方法，并且当用于生产甲基丙烯酸羟烷基酯作为催化剂时，其活性和选择性高，对反应液的溶解性好。制造本发明的甲基丙烯酸羟烷基酯的甲基丙烯酸铁的制造方法包括将表面的XRF分析得到的具有氧原子含量的金属铁的混合物的6质量％以下，甲基丙烯酸与在95℃以上且低于110℃进行100〜600分钟的热处理。根据本发明的制备甲基丙烯酸羟烷基酯的方法包括使环氧烷与甲基丙烯酸反应以制备甲基丙烯酸羟烷基酯，其中使用根据本发明的方法制备的甲基丙烯酸铁作为催化剂。

2. 发明申请

US20130172591A1 METHODS FOR PRODUCING IRON METHACRYLATE AND HYDROXYALKYL METHACRYLATE 有权
标题翻译：生产甲基丙烯酸甲酯和羟丙基甲基丙烯酸酯的方法
公开(公告)号：US20130172591A1
公开(公告)日：2013-07-04
申请号：US13822017
申请日：2011-12-26
申请人： Naoshi Murata , Kuniyoshi Ogura , Takeshi Matsuo , Akira Yoshioka
发明人： Naoshi Murata , Kuniyoshi Ogura , Takeshi Matsuo , Akira Yoshioka
IPC分类号： B01J31/12 , C07C67/26
CPC分类号： B01J31/12 , B01J31/2226 , B01J2531/842 , C07C51/412 , C07C67/26 , C07C69/54 , C07C57/04
摘要： There is provided a method for producing iron methacrylate being inexpensive, and being high in activity and selectivity and good in solubility to a reaction liquid when being used in production of a hydroxyalkyl methacrylate as a catalyst. The method for producing iron methacrylate for production of a hydroxyalkyl methacrylate according to the present invention includes subjecting a mixture of a metallic iron having an oxygen atom content by XRF analysis of the surface thereof of 6% by mass or lower, and methacrylic acid to a heat treatment at 95° C. or higher and lower than 110° C. for 100 to 600 min. The method for producing a hydroxyalkyl methacrylate according to the present invention includes reacting an alkylene oxide with methacrylic acid to produce the hydroxyalkyl methacrylate, wherein iron methacrylate produced by the method according to the present invention is used as a catalyst.
摘要翻译：本发明提供了生产廉价的甲基丙烯酸铁的方法，并且当用于生产甲基丙烯酸羟烷基酯作为催化剂时，其活性和选择性高，对反应液的溶解性好。制造本发明的甲基丙烯酸羟烷基酯的甲基丙烯酸铁的制造方法包括将表面的XRF分析得到的具有氧原子含量的金属铁的混合物的6质量％以下，甲基丙烯酸与在95℃以上且低于110℃进行100〜600分钟的热处理。根据本发明的制备甲基丙烯酸羟烷基酯的方法包括使环氧烷与甲基丙烯酸反应以制备甲基丙烯酸羟烷基酯，其中使用根据本发明的方法制备的甲基丙烯酸铁作为催化剂。

3. 发明授权

US08759878B2 Nitride semiconductor device and method for manufacturing same 失效
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US08759878B2
公开(公告)日：2014-06-24
申请号：US13238684
申请日：2011-09-21
申请人： Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Akira Yoshioka , Wataru Saito
发明人： Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Akira Yoshioka , Wataru Saito
IPC分类号： H01L29/66
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7787
摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.
摘要翻译：根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。第一，第二和第四半导体层包括氮化物半导体。第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。第三半导体层设置在第二半导体层上。第三半导体层是GaN。第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。第一电极设置在第三半导体层的一部分上。第四半导体层不设置在该部分上。

4. 发明申请

US20130062671A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20130062671A1
公开(公告)日：2013-03-14
申请号：US13420559
申请日：2012-03-14
申请人： Wataru SAITO , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Testsuya Ohno
发明人： Wataru SAITO , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Testsuya Ohno
IPC分类号： H01L29/78
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/1075 , H01L29/1087 , H01L29/2003 , H01L29/4236 , H01L29/7783
摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.
摘要翻译：氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。第二半导体层直接接合到第一半导体层。导电基板设置在电连接到第一半导体层上。第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。第一电极电连接到由Si形成的MOSFET的漏电极。控制电极与MOSFET的源电极电连接。导电基板电连接到MOSFET的栅电极。

5. 发明授权

US08334132B2 Process for production of a betaine such as carnitine 失效
标题翻译：生产甜菜碱如肉碱的方法
公开(公告)号：US08334132B2
公开(公告)日：2012-12-18
申请号：US12514000
申请日：2007-11-09
申请人： Kosuke Oishi , Eiji Sato , Hiroyuki Mori , Akira Yoshioka
发明人： Kosuke Oishi , Eiji Sato , Hiroyuki Mori , Akira Yoshioka
IPC分类号： C12P41/00
CPC分类号： C07C227/12 , C12P13/007 , C07C229/22
摘要： According to the present invention, by using 4-halogeno-3-hydroxybutanamide as a substrate in quaternary amination reaction with trialkylamine which is an important step in betaine (such as carnitine) preparation processes, it becomes possible to reduce the production of crotonic acid derivatives (the major by-product) greatly compared to conventional processes. Consequently, it becomes possible to prepare a betaine, such as carnitine, at a high yield.
摘要翻译：根据本发明，通过在作为甜菜碱（例如肉碱）制备方法中的重要步骤的三烷基胺的季胺化反应中使用4-卤代-3-羟基丁酰胺作为底物，可以减少巴豆酸衍生物的生产（主要副产品）与常规工艺相比大大增加。因此，可以以高收率制备甜菜碱，如肉毒碱。

6. 发明授权

US07728354B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07728354B2
公开(公告)日：2010-06-01
申请号：US11939976
申请日：2007-11-14
申请人： Wataru Saito , Akira Yoshioka , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta , Yorito Kakiuchi
发明人： Wataru Saito , Akira Yoshioka , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta , Yorito Kakiuchi
IPC分类号： H01L21/338
CPC分类号： H01L29/045 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/41766 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device includes: a first semiconductor layer of p-type AlxGa1-xN (0≦x≦1); a second semiconductor layer of n-type AlyGa1-yN (0
摘要翻译：半导体器件包括：p型Al x Ga 1-x N（0＆amp; n 1; x＆n 1; 1）的第一半导体层; 在第一半导体层上形成的n型Al y Ga 1-y N（0

7. 发明授权

US5376239A Process for separating electrodeposited metal in electrolytic refining 失效
标题翻译：在电解精炼中分离电沉积金属的工艺
公开(公告)号：US5376239A
公开(公告)日：1994-12-27
申请号：US145190
申请日：1993-11-03
申请人： Hideomi Saito , Saburo Tanaka , Akiyoshi Tatsui , Akira Yoshioka
发明人： Hideomi Saito , Saburo Tanaka , Akiyoshi Tatsui , Akira Yoshioka
IPC分类号： C25C7/08 , C25C1/14 , C25C1/18 , C25C1/22
CPC分类号： C25C7/08 , Y10S266/901
摘要： A process for separating an electrodeposited metal from a cathode plate in electrolytic refining is disclosed. The cathode plate on which the metal is electrodeposited is first held. Then, heated air is blown toward the cathode plate and the electrodeposited metal thereon. As a result, the electrodeposited metal is separated from the cathode plate. An apparatus for carrying out the same process is also disclosed. The apparatus includes a separating furnace, a holding assembly, and a device for introducing heated air into the separating furnace. The holding assembly is attached to the separating furnace for holding the cathode plate in the furnace. The heated air-introducing device introduces heated air, blowing it against the cathode plate, whereby the electrodeposited metal is separated from the cathode plate.
摘要翻译：公开了一种在电解精炼中将电沉积金属与阴极板分离的方法。首先保持其上沉积有金属的阴极板。然后，将加热的空气吹向阴极板和其上的电沉积金属。结果，电沉积金属与阴极板分离。还公开了用于执行相同过程的装置。该装置包括分离炉，保持组件和用于将加热的空气引入分离炉的装置。保持组件附接到用于将阴极板保持在炉中的分离炉。加热的空气引入装置引入加热的空气，将其吹向阴极板，由此使电沉积金属与阴极板分离。

8. 发明授权

US09082691B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US09082691B2
公开(公告)日：2015-07-14
申请号：US13619560
申请日：2012-09-14
申请人： Akira Yoshioka , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
发明人： Akira Yoshioka , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
IPC分类号： H01L29/66 , H01L29/20 , H01L29/423 , H01L29/778
CPC分类号： H01L29/2003 , H01L29/0619 , H01L29/1066 , H01L29/4236 , H01L29/42364 , H01L29/7787
摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.
摘要翻译：氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二栅电极，互连层。第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。互连层电连接源电极，肖特基电极和第二栅电极。

9. 发明授权

US08860090B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08860090B2
公开(公告)日：2014-10-14
申请号：US13420559
申请日：2012-03-14
申请人： Wataru Saito , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Tetsuya Ohno
发明人： Wataru Saito , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Tetsuya Ohno
IPC分类号： H01L29/778 , H01L29/10 , H01L29/423
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/1075 , H01L29/1087 , H01L29/2003 , H01L29/4236 , H01L29/7783
摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.
摘要翻译：氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。第二半导体层直接接合到第一半导体层。导电基板设置在电连接到第一半导体层上。第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。第一电极电连接到由Si形成的MOSFET的漏电极。控制电极与MOSFET的源电极电连接。导电基板电连接到MOSFET的栅电极。

10. 发明申请

US20070051977A1 Nitride semiconductor device 失效
标题翻译：氮化物半导体器件
公开(公告)号：US20070051977A1
公开(公告)日：2007-03-08
申请号：US11507493
申请日：2006-08-22
申请人： Wataru Saito , Masaaki Onomura , Akira Tanaka , Koichi Tachibana , Masahiko Kuraguchi , Takao Noda , Tomohiro Nitta , Akira Yoshioka
发明人： Wataru Saito , Masaaki Onomura , Akira Tanaka , Koichi Tachibana , Masahiko Kuraguchi , Takao Noda , Tomohiro Nitta , Akira Yoshioka
IPC分类号： H01L31/00 , H01L21/336
CPC分类号： H01L29/7787 , H01L29/0649 , H01L29/0657 , H01L29/2003 , H01L29/42316
摘要： A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.
摘要翻译：一种氮化物半导体器件包括：衬底本体，包括导电衬底部分和高电阻部分; 设置在基板主体上的氮化物半导体的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的第一主电极; 设置在所述第二半导体层上的第二主电极; 以及设置在第一主电极和第二主电极之间的第二半导体层上的控制电极。第二半导体层由具有比第一半导体层宽的带隙的非掺杂或n型氮化物半导体制成。第一主电极设置在导电部分的上方，第二主电极设置在高电阻部分的上方。

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