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    • 8. 发明授权
    • Nitride semiconductor device and method for manufacturing same
    • 氮化物半导体器件及其制造方法
    • US08759878B2
    • 2014-06-24
    • US13238684
    • 2011-09-21
    • Yasunobu SaitoHidetoshi FujimotoTetsuya OhnoAkira YoshiokaWataru Saito
    • Yasunobu SaitoHidetoshi FujimotoTetsuya OhnoAkira YoshiokaWataru Saito
    • H01L29/66
    • H01L29/7783H01L29/2003H01L29/4236H01L29/66462H01L29/7787
    • According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.
    • 根据一个实施例,氮化物半导体器件包括第一半导体,第二半导体层,第三半导体层,第四半导体层,第一电极,第二电极和第三电极。 第一,第二和第四半导体层包括氮化物半导体。 第二半导体层设置在第一半导体层上,具有不小于第一半导体层的带隙。 第三半导体层设置在第二半导体层上。 第三半导体层是GaN。 第四半导体层设置在第三半导体层上,以在第三半导体层的一部分上具有间隙,具有不小于第二半导体层的带隙。 第一电极设置在第三半导体层的一部分上。 第四半导体层不设置在该部分上。
    • 9. 发明授权
    • Nitride semiconductor device
    • 氮化物半导体器件
    • US09082691B2
    • 2015-07-14
    • US13619560
    • 2012-09-14
    • Akira YoshiokaYasunobu SaitoHidetoshi FujimotoTetsuya OhnoWataru Saito
    • Akira YoshiokaYasunobu SaitoHidetoshi FujimotoTetsuya OhnoWataru Saito
    • H01L29/66H01L29/20H01L29/423H01L29/778
    • H01L29/2003H01L29/0619H01L29/1066H01L29/4236H01L29/42364H01L29/7787
    • A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.
    • 氮化物半导体器件包括衬底,第一In x1Ga1-x1-y1Aly1N层,第二Inx2Ga1-x2-y2Aly2N层,层间绝缘膜,源电极,漏电极,第一栅电极,肖特基电极,第二 栅电极,互连层。 第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。 第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。 第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。 肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 互连层电连接源电极,肖特基电极和第二栅电极。
    • 10. 发明授权
    • Nitride semiconductor device
    • 氮化物半导体器件
    • US08860090B2
    • 2014-10-14
    • US13420559
    • 2012-03-14
    • Wataru SaitoYasunobu SaitoHidetoshi FujimotoAkira YoshiokaTetsuya Ohno
    • Wataru SaitoYasunobu SaitoHidetoshi FujimotoAkira YoshiokaTetsuya Ohno
    • H01L29/778H01L29/10H01L29/423
    • H01L29/7786H01L29/1066H01L29/1075H01L29/1087H01L29/2003H01L29/4236H01L29/7783
    • A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.
    • 氮化物半导体器件包括第一半导体层,第二半导体层,导电衬底,第一电极,第二电极和控制电极。 第二半导体层直接接合到第一半导体层。 导电基板设置在电连接到第一半导体层上。 第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。 控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。 第一电极电连接到由Si形成的MOSFET的漏电极。 控制电极与MOSFET的源电极电连接。 导电基板电连接到MOSFET的栅电极。